低相位噪声源是一种频率准确度、稳定度都很高且相位噪声又非常低的频率源。本文在简要着重描述了VCXO压控晶振锁相源、高频单元、低相位噪声微波倍频链、低噪声直流稳压电源等低相位噪声频率源关键部件的设计和研制过程。所研发的低相...低相位噪声源是一种频率准确度、稳定度都很高且相位噪声又非常低的频率源。本文在简要着重描述了VCXO压控晶振锁相源、高频单元、低相位噪声微波倍频链、低噪声直流稳压电源等低相位噪声频率源关键部件的设计和研制过程。所研发的低相位噪声频率源的频率范围从5 M Hz至20 C Hz点频输出,在100MHz频率时相噪达—176dBc/Hz(偏移100kHz处),具有较宽的频率范围和超低相位噪声。经测试该产品完全满足相位噪声测试分析的需要,有着广泛的应用前景和推广价值。展开更多
A 35-130 MHz/300-360 MHz phase-locked loop frequency synthesizer for △-∑ analog-to-digital con- verter （ADC） in 65 nm CMOS is presented. The frequency synthesizer can work in low phase-noise mode （300-360 MHz） o...A 35-130 MHz/300-360 MHz phase-locked loop frequency synthesizer for △-∑ analog-to-digital con- verter （ADC） in 65 nm CMOS is presented. The frequency synthesizer can work in low phase-noise mode （300-360 MHz） or in low-power mode （35-130 MHz） to satisfy the ADC＇s requirements. To switch between these two modes, a high frequency GHz LC VCO followed by a divided-by-four frequency divider and a low frequency ring VCO followed by a divided-by-two frequency divider are integrated on-chip. The measured results show that the fre- quency synthesizer achieves a phase-noise of-132 dBc/Hz at 1 MHz offset and an integrated RMS jitter of 1.12 ps with 1.74 mW power consumption from a 1.2 V power supply in low phase-noise mode. In low-power mode, the frequency synthesizer achieves a phase-noise of-112 dBc/Hz at 1 MHz offset and an integrated RMS jitter of 7.23 ps with 0.92 mW power consumption from a 1.2 V power supply.展开更多
文摘低相位噪声源是一种频率准确度、稳定度都很高且相位噪声又非常低的频率源。本文在简要着重描述了VCXO压控晶振锁相源、高频单元、低相位噪声微波倍频链、低噪声直流稳压电源等低相位噪声频率源关键部件的设计和研制过程。所研发的低相位噪声频率源的频率范围从5 M Hz至20 C Hz点频输出,在100MHz频率时相噪达—176dBc/Hz(偏移100kHz处),具有较宽的频率范围和超低相位噪声。经测试该产品完全满足相位噪声测试分析的需要,有着广泛的应用前景和推广价值。
文摘A 35-130 MHz/300-360 MHz phase-locked loop frequency synthesizer for △-∑ analog-to-digital con- verter （ADC） in 65 nm CMOS is presented. The frequency synthesizer can work in low phase-noise mode （300-360 MHz） or in low-power mode （35-130 MHz） to satisfy the ADC＇s requirements. To switch between these two modes, a high frequency GHz LC VCO followed by a divided-by-four frequency divider and a low frequency ring VCO followed by a divided-by-two frequency divider are integrated on-chip. The measured results show that the fre- quency synthesizer achieves a phase-noise of-132 dBc/Hz at 1 MHz offset and an integrated RMS jitter of 1.12 ps with 1.74 mW power consumption from a 1.2 V power supply in low phase-noise mode. In low-power mode, the frequency synthesizer achieves a phase-noise of-112 dBc/Hz at 1 MHz offset and an integrated RMS jitter of 7.23 ps with 0.92 mW power consumption from a 1.2 V power supply.
