给出了高倍增 SI-Ga As光电导开关中在临界光能、电场阈值触发条件下的瞬态光激发电荷畴现象的实验结果 ,进一步讨论了生成畴的光、电阈值条件 ,提出用类似于耿畴的单电荷畴的物理模型来描述高倍增 Ga As光电导开关中的 L ock-on效应。...给出了高倍增 SI-Ga As光电导开关中在临界光能、电场阈值触发条件下的瞬态光激发电荷畴现象的实验结果 ,进一步讨论了生成畴的光、电阈值条件 ,提出用类似于耿畴的单电荷畴的物理模型来描述高倍增 Ga As光电导开关中的 L ock-on效应。分析了单电荷畴的形成和辐射发光的物理过程 ,并对 L展开更多
The transient resistance,voltage,and power of a nonlinear GaAs photoconductive semiconductor switch （PCSS） are presented by the finite difference formula to deal with the experiment data, based on the conversation o...The transient resistance,voltage,and power of a nonlinear GaAs photoconductive semiconductor switch （PCSS） are presented by the finite difference formula to deal with the experiment data, based on the conversation of energy in the switch circuit. This method resolves the problem of directly measuring the transient characteristics of PCSS in nonlinear mode. The curve of transient voltage shows that the average electric field of PCSS in the lock-on period is always higher than the Gunn threshold,and increases monotonically. By comparing the transient power curves of the PCSS and the electrical source,it is demonstrated directly that the power shortage leads to the PCSS from the lock-on state into the selfturnoff state,so a controllable turnoff of the PCSS in lock-on by changing the distribution of the circuit power is predicted.展开更多
文摘The transient resistance,voltage,and power of a nonlinear GaAs photoconductive semiconductor switch （PCSS） are presented by the finite difference formula to deal with the experiment data, based on the conversation of energy in the switch circuit. This method resolves the problem of directly measuring the transient characteristics of PCSS in nonlinear mode. The curve of transient voltage shows that the average electric field of PCSS in the lock-on period is always higher than the Gunn threshold,and increases monotonically. By comparing the transient power curves of the PCSS and the electrical source,it is demonstrated directly that the power shortage leads to the PCSS from the lock-on state into the selfturnoff state,so a controllable turnoff of the PCSS in lock-on by changing the distribution of the circuit power is predicted.
