High-performance, large-area optical gratings for applications like chirped pulse amplification, gravitational wave astronomy, and X-ray optics require sub-nanometer line placement control over several cm^(2). Electro...High-performance, large-area optical gratings for applications like chirped pulse amplification, gravitational wave astronomy, and X-ray optics require sub-nanometer line placement control over several cm^(2). Electron beam lithography with a variable shaped beam(VSB) is well suited but limited by tool-dependent address grid discretization. We adapted address grid interpolation to the VSB method, reducing the effective placement grid to 25 pm, as confirmed by stray light measurements.展开更多
Block copolymer(BCP) nanolithography offers potential beyond traditional photolithographic limits, yet reliably producing low-defect, perpendicular domains remains challenging. We introduce a microenvironmentdriven is...Block copolymer(BCP) nanolithography offers potential beyond traditional photolithographic limits, yet reliably producing low-defect, perpendicular domains remains challenging. We introduce a microenvironmentdriven isothermal annealing method for directed self-assembly of BCP thin films. By annealing films at stable temperature in a quasi-sealed, inert-gas chamber, our approach promotes highly uniform perpendicular lamellar nanopatterns over large areas, effectively mitigating environmental fluctuations and emulating solvent-vapor annealing without solvent exposure. Resulting BCP structures demonstrate enhanced spatial coherence and notably low defect density. Furthermore, we successfully transfer these nanopatterns into precise metal nano-line arrays,confirming the method's capability for high-fidelity pattern replication. This scalable, solvent-free technique provides a robust, reliable route for high-resolution nanopatterning in advanced semiconductor manufacturing.展开更多
Lithography is a Key enabling technique in modern micro/nano scale technology.Achieving the optimal trade-off between resolution,throughput,and cost remains a central focus in the ongoing development.However,current l...Lithography is a Key enabling technique in modern micro/nano scale technology.Achieving the optimal trade-off between resolution,throughput,and cost remains a central focus in the ongoing development.However,current lithographic techniques such as direct-write,projection,and extreme ultraviolet lithography achieve higher resolution at the expense of increased complexity in optical systems or the use of shorter-wavelength light sources,thus raising the overall cost of production.Here,we present a cost-effective and wafer-level perfect conformal contact lithography at the diffraction limit.By leveraging a transferable photoresist,the technique ensures optimal contact between the mask and photoresist with zero-gap,facilitating the transfer of patterns at the diffraction limit while maintaining high fidelity and uniformity across large wafers.This technique applies to a wide range of complex surfaces,including non-conductive glass surfaces,flexible substrates,and curved surfaces.The proposed technique expands the potential of contact photolithography for novel device architectures and practic al manufacturing processes.展开更多
In recent years, significant research efforts have been made to optimize the lithography processes. Liu et al.[1](Nat.Commun, 2024, https://doi.org/10.1038/s41467-024-46743-5)pioneered a new multi-photon lithography t...In recent years, significant research efforts have been made to optimize the lithography processes. Liu et al.[1](Nat.Commun, 2024, https://doi.org/10.1038/s41467-024-46743-5)pioneered a new multi-photon lithography technology in which light field and matter are co-confined, significantly exceeding the limitations of traditional lithography technology. In this news and views, we introduce this work to readers.展开更多
Chitosan(CS)-based nanocomposites have been studied in various fields,requiring a more facile and efficient technique to fabricate nanoparticles with customized structures.In this study,Ag@methacrylamide CS/poly(ethyl...Chitosan(CS)-based nanocomposites have been studied in various fields,requiring a more facile and efficient technique to fabricate nanoparticles with customized structures.In this study,Ag@methacrylamide CS/poly(ethylene glycol)diacrylate(Ag@MP)micropatterns are successfully fabricated by femtosecond laser maskless optical projection lithography(Fs-MOPL)for the first time.The formation mechanism of core-shell nanomaterial is demonstrated by the local surface plasmon resonances and the nucleation and growth theory.Amino and hydroxyl groups greatly affect the number of Ag@MP nanocomposites,which is further verified by replacing MCS with methacrylated bovine serum albumin and hyaluronic acid methacryloyl,respectively.Besides,the performance of the surface-enhanced Raman scattering,cytotoxicity,cell proliferation,and antibacterial was investigated on Ag@MP micropatterns.Therefore,the proposed protocol to prepare hydrogel core-shell micropattern by the home-built Fs-MOPL technique is prospective for potential applications in the biomedical and biotechnological fields,such as biosensors,cell imaging,and antimicrobial.展开更多
Optical proximity correction (OPC) systems require an accurate and fast way to predict how patterns will be transferred to the wafer.Based on Gabor's 'reduction to principal waves',a partially coherent ima...Optical proximity correction (OPC) systems require an accurate and fast way to predict how patterns will be transferred to the wafer.Based on Gabor's 'reduction to principal waves',a partially coherent imaging system can be represented as a superposition of coherent imaging systems,so an accurate and fast sparse aerial image intensity calculation algorithm for lithography simulation is presented based on convolution kernels,which also include simulating the lateral diffusion and some mask processing effects via Gaussian filter.The simplicity of this model leads to substantial computational and analytical benefits.Efficiency of this method is also shown through simulation results.展开更多
A new method for determining proximity parameters α,β ,and η in electron beam lithography is introduced on the assumption that the point exposure spread function is composed of two Gaussians.A single line i...A new method for determining proximity parameters α,β ,and η in electron beam lithography is introduced on the assumption that the point exposure spread function is composed of two Gaussians.A single line is used as test pattern to determine proximity effect parameters and the normalization approach is adopted in experimental data transaction in order to eliminate the need of measuring exposure clearing dose of the resist.Furthermore,the parameters acquired by this method are successfully used for proximity effect correction in electron beam lithography on the same experimental conditions.展开更多
Silicon crystal-facet-dependent nanostructures have been successfully fabricated on a （100）-oriented silicon-oninsulator wafer using electron-beam lithography and the silicon anisotropic wet etching technique. This ...Silicon crystal-facet-dependent nanostructures have been successfully fabricated on a （100）-oriented silicon-oninsulator wafer using electron-beam lithography and the silicon anisotropic wet etching technique. This technique takes advantage of the large difference in etching properties for different crystallographic planes in alkaline solution. The minimum size of the trapezoidal top for those Si nanostructures can be reduced to less than 10nm. Scanning electron microscopy （SEM） and atomic force microscopy （AFM） observations indicate that the etched nanostructures have controllable shapes and smooth surfaces.展开更多
The JEOL JBX-5000LS is a vector type machine.The system hardware features an ion-pumped column,a LaB 6 electron emitter,25kV and 50kV accelerating voltage,and a turbo-pumped sample chamber.The resolution,stability,st...The JEOL JBX-5000LS is a vector type machine.The system hardware features an ion-pumped column,a LaB 6 electron emitter,25kV and 50kV accelerating voltage,and a turbo-pumped sample chamber.The resolution,stability,stitching and overlay of this system are evaluated.The system can write complex patterns at dimensions down to 30nm.The demonstrated overlay accuracy of this system is better than 40nm.展开更多
As a common electronic adhesive,ultraviolet(UV)curing polyurethane acrylate adhesive has both flexibility and wear resistance of polyurethane,excellent weather resistance and optical properties of acrylate.Despite the...As a common electronic adhesive,ultraviolet(UV)curing polyurethane acrylate adhesive has both flexibility and wear resistance of polyurethane,excellent weather resistance and optical properties of acrylate.Despite the extensive applications,it is still difficult to solve the problems caused by the shrinkage of adhesive.Here,a new type of photosensitive adhesive for bonding electronic components based on supramolecular interaction was designed and synthesized.The supramolecular interaction of cyclodextrin and adamantane moieties introduced into the adhesive polymer entitles the viscosity of the adhesive to rise rapidly during use,thereby preventing adhesive loss and dislocation of electronic components.UV light could further cure the adhesive and position the electronic components.The adhesive shrunk<2%when cured by UV light,so it can be used for electronic packaging and high-resolution,defect-free lithography.展开更多
针对“卡脖子”技术研究存在替代技术识别机制缺失与技术要素解析精度不足等局限,文章提出融合提示工程与BERT-LSTM模型的“卡脖子”替代技术识别方法。首先,基于商业管制清单(Commercial Control List,CCL)对ECCN物项进行解析,并开展...针对“卡脖子”技术研究存在替代技术识别机制缺失与技术要素解析精度不足等局限,文章提出融合提示工程与BERT-LSTM模型的“卡脖子”替代技术识别方法。首先,基于商业管制清单(Commercial Control List,CCL)对ECCN物项进行解析,并开展专利检索工作,通过SPC算法提取技术主路径的关键核心专利;其次,运用大语言模型提示工程抽取“问题-方案对”,借此解析技术功效,并结合功能导向搜索(Function-Oriented Search,FOS)初步查找可能具备技术替代功效的相关专利;再次,采用BERT-LSTM模型对专利文本实施二元分类,精准识别出具备技术替代功效的专利样本;通过提示工程抽取“方案-类别对”,系统识别替代技术方案;最后,建立科学-产业双维度评估体系完成替代技术潜力分级。文章以光刻技术为例,阐述该识别方法的应用流程,系统识别出极紫外(Extreme Ultra-violet,EUV)光刻技术的五种替代技术及其替代潜力。展开更多
The 193 nm deep-ultraviolet(DUV)laser plays a critical role in advanced semiconductor chip manufacturing[1,2],micro-nano material characterization[3,4]and biomedical analysis[5,6],due to its high spatial resolution an...The 193 nm deep-ultraviolet(DUV)laser plays a critical role in advanced semiconductor chip manufacturing[1,2],micro-nano material characterization[3,4]and biomedical analysis[5,6],due to its high spatial resolution and short wavelength.Efficient and compact 193 nm DUV laser source thus becomes a hot research area.Currently,193 nm Ar F excimer gas laser is widely employed in DUV lithography systems and serves as the enabling technology for 7 and 5 nm semiconductor fabrication.展开更多
Optical true delay lines(OTDLs)of low propagation losses,small footprints and high tuning speeds and efficiencies are of critical importance for various photonic applications.Here,we report fabrication of electro-opti...Optical true delay lines(OTDLs)of low propagation losses,small footprints and high tuning speeds and efficiencies are of critical importance for various photonic applications.Here,we report fabrication of electro-optically switchable OTDLs on lithium niobate on insulator using photolithography assisted chemo-mechanical etching.Our device consists of several low-loss optical waveguides of different lengths which are consecutively connected by electro-optical switches to generate different amounts of time delay.The fabricated OTLDs show an ultra-low propagation loss of^0.03dB/cm for waveguide lengths well above 100 cm.展开更多
We report a type-I Ga Sb-based laterally coupled distributed-feedback（LC-DFB） laser with shallow-etched gratings operating a continuous wave at room temperature without re-growth process. Second-order Bragg gratings...We report a type-I Ga Sb-based laterally coupled distributed-feedback（LC-DFB） laser with shallow-etched gratings operating a continuous wave at room temperature without re-growth process. Second-order Bragg gratings are fabricated alongside the ridge waveguide by interference lithography. Index-coupled LC-DFB laser with a cavity of 1500 μm achieves single longitudinal mode continuous-wave operation at 20℃ with side mode suppression ratio（SMSR） as high as 24 dB.The maximum single mode continuous-wave output power is about 10 mW at room temperature（uncoated facet）. A low threshold current density of 230 A/cm^2 is achieved with differential quantum efficiency estimated to be 93 mW/A. The laser shows a good wavelength stability against drive current and working temperature.展开更多
We present an all-e-beam lithography （EBL） process for the patterning of photonic crystal waveguides. The whole device structures are exposed in two steps. Holes constituting the photonic crystal lattice and defects...We present an all-e-beam lithography （EBL） process for the patterning of photonic crystal waveguides. The whole device structures are exposed in two steps. Holes constituting the photonic crystal lattice and defects are first exposed with a small exposure step size （less than 10nm）. With the introduction of the additional proximity effect to compensate the original proximity effect, the shape, size, and position of the holes can be well controlled. The second step is the exposure of the access waveguides at a larger step size （about 30nm） to improve the scan speed of the EBL. The influence of write-field stitching error can be alleviated by replacing the original waveguides with tapered waveguides at the joint of adjacent write-fields. It is found experimentally that a higher exposure efficiency is achieved with a larger step size;however,a larger step size requires a higher dose.展开更多
基金Bundesministerium für Bildung und Forschung(03Z1H534, 13N16028)Deutsche Forschungsgemeinschaft(448663633, 455425131)。
文摘High-performance, large-area optical gratings for applications like chirped pulse amplification, gravitational wave astronomy, and X-ray optics require sub-nanometer line placement control over several cm^(2). Electron beam lithography with a variable shaped beam(VSB) is well suited but limited by tool-dependent address grid discretization. We adapted address grid interpolation to the VSB method, reducing the effective placement grid to 25 pm, as confirmed by stray light measurements.
基金supported by the National Natural Science Foundation of China (Grant Nos.U20A20168 and 62404120)the National Key R&D Program (Grant No.2022YFB3204100)+2 种基金the Postdoctoral Fellowship Program of CPSF (Grant Nos.GZB20240335 and GZC20231216)the China Postdoctoral Science Foundation (Grant No.2025T180151)the Initiative Scientific Research Program of the School of Integrated Circuits,Tsinghua University。
文摘Block copolymer(BCP) nanolithography offers potential beyond traditional photolithographic limits, yet reliably producing low-defect, perpendicular domains remains challenging. We introduce a microenvironmentdriven isothermal annealing method for directed self-assembly of BCP thin films. By annealing films at stable temperature in a quasi-sealed, inert-gas chamber, our approach promotes highly uniform perpendicular lamellar nanopatterns over large areas, effectively mitigating environmental fluctuations and emulating solvent-vapor annealing without solvent exposure. Resulting BCP structures demonstrate enhanced spatial coherence and notably low defect density. Furthermore, we successfully transfer these nanopatterns into precise metal nano-line arrays,confirming the method's capability for high-fidelity pattern replication. This scalable, solvent-free technique provides a robust, reliable route for high-resolution nanopatterning in advanced semiconductor manufacturing.
基金supported by the National Key Research and Development Program of China (2022YFB4602600)National Natural Science Foundation of China (Grant Nos. 52425508 & 52221001)the Hunan Provincial Natural Science Foundation of China (2025JJ60286)。
文摘Lithography is a Key enabling technique in modern micro/nano scale technology.Achieving the optimal trade-off between resolution,throughput,and cost remains a central focus in the ongoing development.However,current lithographic techniques such as direct-write,projection,and extreme ultraviolet lithography achieve higher resolution at the expense of increased complexity in optical systems or the use of shorter-wavelength light sources,thus raising the overall cost of production.Here,we present a cost-effective and wafer-level perfect conformal contact lithography at the diffraction limit.By leveraging a transferable photoresist,the technique ensures optimal contact between the mask and photoresist with zero-gap,facilitating the transfer of patterns at the diffraction limit while maintaining high fidelity and uniformity across large wafers.This technique applies to a wide range of complex surfaces,including non-conductive glass surfaces,flexible substrates,and curved surfaces.The proposed technique expands the potential of contact photolithography for novel device architectures and practic al manufacturing processes.
基金supported by Xishan-Tsinghua University Industry University Research Deep Integration Special Projectby Beijing Natural Science Foundation–Xiaomi Innovation Joint Fund (Grant No. L233009)by National Natural Science Foundation of China under Grant No. 62374099。
文摘In recent years, significant research efforts have been made to optimize the lithography processes. Liu et al.[1](Nat.Commun, 2024, https://doi.org/10.1038/s41467-024-46743-5)pioneered a new multi-photon lithography technology in which light field and matter are co-confined, significantly exceeding the limitations of traditional lithography technology. In this news and views, we introduce this work to readers.
基金the National Natural Science Foundation of China(NSFC,Grant Nos.61975213,61475164,51901234,and 61205194)National Key R&D Program of China(Grant Nos.2017YFB1104300and 2016YFA0200500)+2 种基金International Partnership Program of Chinese Academy of Sciences(GJHZ2021130)Cooperative R&D Projects between Austria,FFG and China,CAS(GJHZ1720)supported by JSPS Bilateral Program Number JPJSBP120217203。
文摘Chitosan(CS)-based nanocomposites have been studied in various fields,requiring a more facile and efficient technique to fabricate nanoparticles with customized structures.In this study,Ag@methacrylamide CS/poly(ethylene glycol)diacrylate(Ag@MP)micropatterns are successfully fabricated by femtosecond laser maskless optical projection lithography(Fs-MOPL)for the first time.The formation mechanism of core-shell nanomaterial is demonstrated by the local surface plasmon resonances and the nucleation and growth theory.Amino and hydroxyl groups greatly affect the number of Ag@MP nanocomposites,which is further verified by replacing MCS with methacrylated bovine serum albumin and hyaluronic acid methacryloyl,respectively.Besides,the performance of the surface-enhanced Raman scattering,cytotoxicity,cell proliferation,and antibacterial was investigated on Ag@MP micropatterns.Therefore,the proposed protocol to prepare hydrogel core-shell micropattern by the home-built Fs-MOPL technique is prospective for potential applications in the biomedical and biotechnological fields,such as biosensors,cell imaging,and antimicrobial.
文摘Optical proximity correction (OPC) systems require an accurate and fast way to predict how patterns will be transferred to the wafer.Based on Gabor's 'reduction to principal waves',a partially coherent imaging system can be represented as a superposition of coherent imaging systems,so an accurate and fast sparse aerial image intensity calculation algorithm for lithography simulation is presented based on convolution kernels,which also include simulating the lateral diffusion and some mask processing effects via Gaussian filter.The simplicity of this model leads to substantial computational and analytical benefits.Efficiency of this method is also shown through simulation results.
文摘A new method for determining proximity parameters α,β ,and η in electron beam lithography is introduced on the assumption that the point exposure spread function is composed of two Gaussians.A single line is used as test pattern to determine proximity effect parameters and the normalization approach is adopted in experimental data transaction in order to eliminate the need of measuring exposure clearing dose of the resist.Furthermore,the parameters acquired by this method are successfully used for proximity effect correction in electron beam lithography on the same experimental conditions.
文摘Silicon crystal-facet-dependent nanostructures have been successfully fabricated on a （100）-oriented silicon-oninsulator wafer using electron-beam lithography and the silicon anisotropic wet etching technique. This technique takes advantage of the large difference in etching properties for different crystallographic planes in alkaline solution. The minimum size of the trapezoidal top for those Si nanostructures can be reduced to less than 10nm. Scanning electron microscopy （SEM） and atomic force microscopy （AFM） observations indicate that the etched nanostructures have controllable shapes and smooth surfaces.
文摘The JEOL JBX-5000LS is a vector type machine.The system hardware features an ion-pumped column,a LaB 6 electron emitter,25kV and 50kV accelerating voltage,and a turbo-pumped sample chamber.The resolution,stability,stitching and overlay of this system are evaluated.The system can write complex patterns at dimensions down to 30nm.The demonstrated overlay accuracy of this system is better than 40nm.
基金support from the National Natural Science Foundation of China(No.22308279)Guangdong Basic and Applied Basic Research Foundation(No.2021A1515110695)Natural Science Foundation of Chongqing(No.2023NSCQMSX2773).
文摘As a common electronic adhesive,ultraviolet(UV)curing polyurethane acrylate adhesive has both flexibility and wear resistance of polyurethane,excellent weather resistance and optical properties of acrylate.Despite the extensive applications,it is still difficult to solve the problems caused by the shrinkage of adhesive.Here,a new type of photosensitive adhesive for bonding electronic components based on supramolecular interaction was designed and synthesized.The supramolecular interaction of cyclodextrin and adamantane moieties introduced into the adhesive polymer entitles the viscosity of the adhesive to rise rapidly during use,thereby preventing adhesive loss and dislocation of electronic components.UV light could further cure the adhesive and position the electronic components.The adhesive shrunk<2%when cured by UV light,so it can be used for electronic packaging and high-resolution,defect-free lithography.
文摘针对“卡脖子”技术研究存在替代技术识别机制缺失与技术要素解析精度不足等局限,文章提出融合提示工程与BERT-LSTM模型的“卡脖子”替代技术识别方法。首先,基于商业管制清单(Commercial Control List,CCL)对ECCN物项进行解析,并开展专利检索工作,通过SPC算法提取技术主路径的关键核心专利;其次,运用大语言模型提示工程抽取“问题-方案对”,借此解析技术功效,并结合功能导向搜索(Function-Oriented Search,FOS)初步查找可能具备技术替代功效的相关专利;再次,采用BERT-LSTM模型对专利文本实施二元分类,精准识别出具备技术替代功效的专利样本;通过提示工程抽取“方案-类别对”,系统识别替代技术方案;最后,建立科学-产业双维度评估体系完成替代技术潜力分级。文章以光刻技术为例,阐述该识别方法的应用流程,系统识别出极紫外(Extreme Ultra-violet,EUV)光刻技术的五种替代技术及其替代潜力。
基金supported by the National Natural Science Foundation of China(Grant Nos.62450006,62304217,62274157,62127807,62234011,62034008,62074142,62074140)Tianshan Innovation Team Program(Grant No.2022TSYCTD0005)+1 种基金Strategic Priority Research Program of the Chinese Academy of Sciences(Grant No.XDB0880000)Youth Innovation Promotion Association of the Chinese Academy of Sciences(Grant Nos.2023124,Y2023032)。
文摘The 193 nm deep-ultraviolet(DUV)laser plays a critical role in advanced semiconductor chip manufacturing[1,2],micro-nano material characterization[3,4]and biomedical analysis[5,6],due to its high spatial resolution and short wavelength.Efficient and compact 193 nm DUV laser source thus becomes a hot research area.Currently,193 nm Ar F excimer gas laser is widely employed in DUV lithography systems and serves as the enabling technology for 7 and 5 nm semiconductor fabrication.
基金Supported by the National Key R&D Program of China(Grant No.2019YFA0705000)the National Natural Science Foundation of China(Grant Nos.11734009,61590934,and 11874375)+1 种基金the Strategic Priority Research Program of CAS(Grant No.XDB16030300)the Key Project of the Shanghai Science and Technology Committee(Grant No.17JC1400400).
文摘Optical true delay lines(OTDLs)of low propagation losses,small footprints and high tuning speeds and efficiencies are of critical importance for various photonic applications.Here,we report fabrication of electro-optically switchable OTDLs on lithium niobate on insulator using photolithography assisted chemo-mechanical etching.Our device consists of several low-loss optical waveguides of different lengths which are consecutively connected by electro-optical switches to generate different amounts of time delay.The fabricated OTLDs show an ultra-low propagation loss of^0.03dB/cm for waveguide lengths well above 100 cm.
基金Project supported by the National Key Basic Research Program of China(Grant Nos.2014CB643903 and 2013CB932904)the National Special Funds for the Development of Major Research Equipment and Instruments,China(Grant No.2012YQ140005)+1 种基金the National Natural Science Foundation of China(Grant Nos.61435012,61274013,61306088,and 61290303)the Strategic Priority Research Program(B)of the Chinese Academy of Sciences(Grant No.XDB01010200)
文摘We report a type-I Ga Sb-based laterally coupled distributed-feedback（LC-DFB） laser with shallow-etched gratings operating a continuous wave at room temperature without re-growth process. Second-order Bragg gratings are fabricated alongside the ridge waveguide by interference lithography. Index-coupled LC-DFB laser with a cavity of 1500 μm achieves single longitudinal mode continuous-wave operation at 20℃ with side mode suppression ratio（SMSR） as high as 24 dB.The maximum single mode continuous-wave output power is about 10 mW at room temperature（uncoated facet）. A low threshold current density of 230 A/cm^2 is achieved with differential quantum efficiency estimated to be 93 mW/A. The laser shows a good wavelength stability against drive current and working temperature.
文摘We present an all-e-beam lithography （EBL） process for the patterning of photonic crystal waveguides. The whole device structures are exposed in two steps. Holes constituting the photonic crystal lattice and defects are first exposed with a small exposure step size （less than 10nm）. With the introduction of the additional proximity effect to compensate the original proximity effect, the shape, size, and position of the holes can be well controlled. The second step is the exposure of the access waveguides at a larger step size （about 30nm） to improve the scan speed of the EBL. The influence of write-field stitching error can be alleviated by replacing the original waveguides with tapered waveguides at the joint of adjacent write-fields. It is found experimentally that a higher exposure efficiency is achieved with a larger step size;however,a larger step size requires a higher dose.
