The relentless drive toward miniaturization in the semiconductor industry demands photoresists capable of patterning sub-20 nm features for next-generation extreme ultraviolet(EUV)lithography.Metal-oxo clusters,with s...The relentless drive toward miniaturization in the semiconductor industry demands photoresists capable of patterning sub-20 nm features for next-generation extreme ultraviolet(EUV)lithography.Metal-oxo clusters,with sub-5 nm molecular dimensions,structural tunability,and high EUV absorption via metal centers,have emerged as promising EUV photoresist candidates.Advancing next-generation photoresist materials necessitates resolving the inherent trade-offs between sensitivity,resolution,and line-edge roughness.In this work,we report a series of halogenated metal-organic clusters based EUVL photoresists,aiming to modulate the sensitivity,resolution,and line-edge roughness.Here,we report the synthesis of halogenated metal-organic clusters as EUVL photoresists,designed to modulate the resolution-line edge roughness-sensitivity trade-off.Sub-20 nm critical dimensions and line edge roughness below 2 nm were achieved with the clusters by EUVL.The results demonstrated that halogen elements influenced the sensitivity of the clusters.To unravel the EUV-driven reaction pathways,we analyzed the chemical transformations in these clusters after exposure using X-ray photoelectron spectroscopy and Fourier-transform infrared spectroscopy.These findings pave the way for the rational design of high-performance EUV photoresists.展开更多
Metal oxide cluster(MOC)photoresists are highly promising materials for the next generation of extreme ultraviolet lithography(EUVL).The consecutive exploration of novel MOC materials and their structural irradiation ...Metal oxide cluster(MOC)photoresists are highly promising materials for the next generation of extreme ultraviolet lithography(EUVL).The consecutive exploration of novel MOC materials and their structural irradiation chemistry are the major concerns associated with EUVL.Herein,we report two bicoordinated tin-oxo clusters(TOCs),the organic ligands of which contain both adamantane carboxylic acids and alkyl groups(methyl:Sn_(4)–Me–C10;butyl:Sn_(4)–Bu–C10).We explore the correlation between the structures of the TOCs and their patterning properties by adjusting the alkyl groups coordinated to the Sn atom.The structural variation causes different irradiation chemistry,with Sn_(4)–Me–C10 exhibiting improved resolution and Sn_(4)–Bu–C10 demonstrating higher sensitivity.These differences are attributed to the bonding energies of the Sn-methyl and Sn-butyl groups,the size of the resulting alkyl radicals,and their reaction probabilities.Both clusters occur in the reactions of Sn–C bond cleavage and the decarboxylation of adamantane carboxylic acids upon irradiation.However,the entire process exhibits distinct characteristics.Based on the electron-beam lithography and other experiments,we proposed irradiationinduced reaction mechanisms for both clusters.The Sn_(4)–Bu–C10 cluster predominantly undergoes alkane chain linkage,whereas the Sn_(4)–Me–C10 cluster mainly follows the adamantanes linkage pathway.展开更多
基金supported by the National Science and Technology Major Project from the Ministry of Science and Technology of China(No.2018AAA0103100)the National Key Research and Development Program of China(No.2021YFB3200800)the National Natural Science Foundation of China(Nos.22201289,62305365)for financial support。
文摘The relentless drive toward miniaturization in the semiconductor industry demands photoresists capable of patterning sub-20 nm features for next-generation extreme ultraviolet(EUV)lithography.Metal-oxo clusters,with sub-5 nm molecular dimensions,structural tunability,and high EUV absorption via metal centers,have emerged as promising EUV photoresist candidates.Advancing next-generation photoresist materials necessitates resolving the inherent trade-offs between sensitivity,resolution,and line-edge roughness.In this work,we report a series of halogenated metal-organic clusters based EUVL photoresists,aiming to modulate the sensitivity,resolution,and line-edge roughness.Here,we report the synthesis of halogenated metal-organic clusters as EUVL photoresists,designed to modulate the resolution-line edge roughness-sensitivity trade-off.Sub-20 nm critical dimensions and line edge roughness below 2 nm were achieved with the clusters by EUVL.The results demonstrated that halogen elements influenced the sensitivity of the clusters.To unravel the EUV-driven reaction pathways,we analyzed the chemical transformations in these clusters after exposure using X-ray photoelectron spectroscopy and Fourier-transform infrared spectroscopy.These findings pave the way for the rational design of high-performance EUV photoresists.
基金supported by the National Natural Science Foundation of China(grant nos.22090011 and 22378052)the Fundamental Research Funds for China Central Universities(grant nos.DUT22LAB608 and DUT20RC(3)030)Key R&D Program of Shandong Province(grant no.2021CXGC010308).
文摘Metal oxide cluster(MOC)photoresists are highly promising materials for the next generation of extreme ultraviolet lithography(EUVL).The consecutive exploration of novel MOC materials and their structural irradiation chemistry are the major concerns associated with EUVL.Herein,we report two bicoordinated tin-oxo clusters(TOCs),the organic ligands of which contain both adamantane carboxylic acids and alkyl groups(methyl:Sn_(4)–Me–C10;butyl:Sn_(4)–Bu–C10).We explore the correlation between the structures of the TOCs and their patterning properties by adjusting the alkyl groups coordinated to the Sn atom.The structural variation causes different irradiation chemistry,with Sn_(4)–Me–C10 exhibiting improved resolution and Sn_(4)–Bu–C10 demonstrating higher sensitivity.These differences are attributed to the bonding energies of the Sn-methyl and Sn-butyl groups,the size of the resulting alkyl radicals,and their reaction probabilities.Both clusters occur in the reactions of Sn–C bond cleavage and the decarboxylation of adamantane carboxylic acids upon irradiation.However,the entire process exhibits distinct characteristics.Based on the electron-beam lithography and other experiments,we proposed irradiationinduced reaction mechanisms for both clusters.The Sn_(4)–Bu–C10 cluster predominantly undergoes alkane chain linkage,whereas the Sn_(4)–Me–C10 cluster mainly follows the adamantanes linkage pathway.
