Hydrogenated amorphous silicon(a-Si:H)has a long history in the development of photovoltaics,especially in the research field of a-Si:H thin-film solar cells and crystalline/amorphous silicon heterojunction solar cell...Hydrogenated amorphous silicon(a-Si:H)has a long history in the development of photovoltaics,especially in the research field of a-Si:H thin-film solar cells and crystalline/amorphous silicon heterojunction solar cells.More than 40 years ago,Staebler and Wronski reported conductance decrease of a-Si:H induced by light soaking.This phenomenon has been widely investigated for electronic applications.In contrast to that,we found light soaking can also improve dark conductance of a-Si:H when boron or phosphorus atoms are doped into the amorphous network.Here we survey these two photoelectronic effects,and discuss their implementations to silicon solar cells.展开更多
The exploitation of proper electron transport layers(ETLs)and interface optimization can play a pivotal role to promote the performance of organic solar cells(OSCs).In this work,low temperature processable tin oxide(S...The exploitation of proper electron transport layers(ETLs)and interface optimization can play a pivotal role to promote the performance of organic solar cells(OSCs).In this work,low temperature processable tin oxide(SnO_(2))colloidal nanoparticles with ethanolamine(EA)treatment are successfully employed for efficient and stable OSCs with light soaking free.The EA is chemically bonded with SnO_(2),and the ethanolamine treated tin oxide(E-SnO_(2))layer delivers a suitable work function of 4.10 eV and a unique surface texture with suspended polar moieties.The enhanced performance of E-SnO_(2) based OSCs can be attributed to the improved charge transport and electron extraction,which is correlated with the regulated energy level alignment and contact quality of E-SnO_(2)/active layer.As a result,considerable power conversion efficiencies(PCEs)of 10.30%,13.93%and 15.38%for PTB7-Th/PC_(71) BM,PM7/ITC6-4 F and PM6/Y6 based OSCs have been realized with E-SnO_(2) as ETL,respectively.Compared with ZnO based devices,the E-SnO_(2) based OSCs exhibit an improved light aging stability,which can retain 94.3%of their initial PCE of 15.38%after 100 h light aging for E-SnO_(2)/PM6/Y6 based OSCs.This work demonstrates that the enormous potential of E-SnO_(2) to serve as ETL for high-efficiency and stable OSCs.展开更多
Short-wavelength ultraviolet(UV)photons adversely affect hydrogenated amorphous silicon thin films,as well as on silicon heterojunction(SHJ)solar cells and modules.This research examines the impact and mechanisms of p...Short-wavelength ultraviolet(UV)photons adversely affect hydrogenated amorphous silicon thin films,as well as on silicon heterojunction(SHJ)solar cells and modules.This research examines the impact and mechanisms of photon-induced performance changes.UV A exposure disrupts Si-H bonds,significantly reducing hydrogen content in both intrinsic and doped hydrogenated amorphous silicon(a-Si:H)films.This disruption impairs the interface passivation effect,leading to the degradation of SHJ solar cells and modules,primarily indicated by a decrease in open-circuit voltage(V_(oc))and fill factor(FF).UV irradiation from the front side of SHJ solar cells reduces V_(oc)and FF by 1.38%and 2.28%,respectively,resulting in a 2.28%efficiency decline.Cells irradiated from the backside show decreases in V_(oc)and FF of approximately 1.96%and 2.73%,respectively,leading to an overall efficiency reduction of approximately 3.58%.However,subsequent light-soaking increases V_(oc)and FF by approximately 0.96%and 1.37%,respectively,for frontside-irradiated cells,achieving an overall efficiency improvement of approximately 2.51%.Thus,light-soaking effectively recovers performance losses caused by UV irradiation in SHJ solar cells.This research clarifies the mechanisms influencing the performance of a-Si:H thin films,SHJ solar cells,and modules under UV irradiation and light-soaking,offering significant contributions towards the development of highly efficient and reliable SHJ devices.展开更多
基金supports from National Natural Science Foundations of China(Nos.T2322028,62004208,62074153)Science and Technology Commission of Shanghai Municipality(No.22ZR1473200)+1 种基金Talent plan of Shanghai Branch,Chinese Academy of Sciences(No.CASSHB-QNPD-2023-001)Shanghai Rising-Star Program(No.23QA1411100).
文摘Hydrogenated amorphous silicon(a-Si:H)has a long history in the development of photovoltaics,especially in the research field of a-Si:H thin-film solar cells and crystalline/amorphous silicon heterojunction solar cells.More than 40 years ago,Staebler and Wronski reported conductance decrease of a-Si:H induced by light soaking.This phenomenon has been widely investigated for electronic applications.In contrast to that,we found light soaking can also improve dark conductance of a-Si:H when boron or phosphorus atoms are doped into the amorphous network.Here we survey these two photoelectronic effects,and discuss their implementations to silicon solar cells.
基金the National Natural Science Foundation of China(21905137 and 21875111)the Natural Science Foundation of Jiangsu Province(BK20180496)。
文摘The exploitation of proper electron transport layers(ETLs)and interface optimization can play a pivotal role to promote the performance of organic solar cells(OSCs).In this work,low temperature processable tin oxide(SnO_(2))colloidal nanoparticles with ethanolamine(EA)treatment are successfully employed for efficient and stable OSCs with light soaking free.The EA is chemically bonded with SnO_(2),and the ethanolamine treated tin oxide(E-SnO_(2))layer delivers a suitable work function of 4.10 eV and a unique surface texture with suspended polar moieties.The enhanced performance of E-SnO_(2) based OSCs can be attributed to the improved charge transport and electron extraction,which is correlated with the regulated energy level alignment and contact quality of E-SnO_(2)/active layer.As a result,considerable power conversion efficiencies(PCEs)of 10.30%,13.93%and 15.38%for PTB7-Th/PC_(71) BM,PM7/ITC6-4 F and PM6/Y6 based OSCs have been realized with E-SnO_(2) as ETL,respectively.Compared with ZnO based devices,the E-SnO_(2) based OSCs exhibit an improved light aging stability,which can retain 94.3%of their initial PCE of 15.38%after 100 h light aging for E-SnO_(2)/PM6/Y6 based OSCs.This work demonstrates that the enormous potential of E-SnO_(2) to serve as ETL for high-efficiency and stable OSCs.
基金supported by the Sichuan Science and Technology Program(2023YFG0098 and 2023ZYD0163)National Natural Science Foundation of China(T2322028)+2 种基金Science and Technology Commission of Shanghai Municipality(22ZR1473200)Chengdu Science and Technology Program(2024-JB00-00010-GX)Sichuan Province Key Laboratory of Display Science and Technology。
文摘Short-wavelength ultraviolet(UV)photons adversely affect hydrogenated amorphous silicon thin films,as well as on silicon heterojunction(SHJ)solar cells and modules.This research examines the impact and mechanisms of photon-induced performance changes.UV A exposure disrupts Si-H bonds,significantly reducing hydrogen content in both intrinsic and doped hydrogenated amorphous silicon(a-Si:H)films.This disruption impairs the interface passivation effect,leading to the degradation of SHJ solar cells and modules,primarily indicated by a decrease in open-circuit voltage(V_(oc))and fill factor(FF).UV irradiation from the front side of SHJ solar cells reduces V_(oc)and FF by 1.38%and 2.28%,respectively,resulting in a 2.28%efficiency decline.Cells irradiated from the backside show decreases in V_(oc)and FF of approximately 1.96%and 2.73%,respectively,leading to an overall efficiency reduction of approximately 3.58%.However,subsequent light-soaking increases V_(oc)and FF by approximately 0.96%and 1.37%,respectively,for frontside-irradiated cells,achieving an overall efficiency improvement of approximately 2.51%.Thus,light-soaking effectively recovers performance losses caused by UV irradiation in SHJ solar cells.This research clarifies the mechanisms influencing the performance of a-Si:H thin films,SHJ solar cells,and modules under UV irradiation and light-soaking,offering significant contributions towards the development of highly efficient and reliable SHJ devices.
