In many industries,there is a growing demand for semiconductor pressure sensors capable of operating in harsh environments with extremely high and low temperatures and high vibrations.Utilizing the piezoresistive effe...In many industries,there is a growing demand for semiconductor pressure sensors capable of operating in harsh environments with extremely high and low temperatures and high vibrations.Utilizing the piezoresistive effect of heavily doped N-type 4H-SiC,we proposed a family design of eight pressure sensor chip structures featuring different diaphragm shapes of circles and squares,along with different piezoresistor configurations.The 4H-SiC piezoresistive pressure sensor was developed using micro-electromechanical systems(MEMS)technology and encapsulated in a leadless package structure via low-stress connection achieved by glass frit sintering.The 4H-SiC pressure sensor demonstrates impressive performance,exhibiting an accuracy of 0.18%FSO and a temperature tolerance range from−50 to 600°C,with a temperature coefficient of zero output as low as 0.08%/°C at 600°C.Furthermore,the developed sensor shows remarkable stability under conditions of high-temperature vibration coupling.The advancement of this family of 4H-SiC pressure sensors provides a promising solution for pressure measurement in harsh industrial environments.展开更多
基金supported by the National Natural Science Foundation of China(62401451,62131017)the Postdoctoral Fellowship Program of China Postdoctoral Science Foundation(GZB20230584)the China Postdoctoral Science Foundation(2024M762579)。
文摘In many industries,there is a growing demand for semiconductor pressure sensors capable of operating in harsh environments with extremely high and low temperatures and high vibrations.Utilizing the piezoresistive effect of heavily doped N-type 4H-SiC,we proposed a family design of eight pressure sensor chip structures featuring different diaphragm shapes of circles and squares,along with different piezoresistor configurations.The 4H-SiC piezoresistive pressure sensor was developed using micro-electromechanical systems(MEMS)technology and encapsulated in a leadless package structure via low-stress connection achieved by glass frit sintering.The 4H-SiC pressure sensor demonstrates impressive performance,exhibiting an accuracy of 0.18%FSO and a temperature tolerance range from−50 to 600°C,with a temperature coefficient of zero output as low as 0.08%/°C at 600°C.Furthermore,the developed sensor shows remarkable stability under conditions of high-temperature vibration coupling.The advancement of this family of 4H-SiC pressure sensors provides a promising solution for pressure measurement in harsh industrial environments.
