In 2011,the Chinese Academy of Sciences launched an engineering project to develop an acceleratordriven subcritical system(ADS)for nuclear waste transmutation.The China Lead-based Reactor(CLEAR),proposed by the Instit...In 2011,the Chinese Academy of Sciences launched an engineering project to develop an acceleratordriven subcritical system(ADS)for nuclear waste transmutation.The China Lead-based Reactor(CLEAR),proposed by the Institute of Nuclear Energy Safety Technology,was selected as the reference reactor for ADS development,as well as for the technology development of the Generation IV lead-cooled fast reactor.The conceptual design of CLEAR-I with 10 MW thermal power has been completed.KYLIN series lead-bismuth eutectic experimental loops have been constructed to investigate the technologies of the coolant,key components,structural materials,fuel assembly,operation,and control.In order to validate and test the key components and integrated operating technology of the lead-based reactor,the lead alloy-cooled non-nuclear reactor CLEAR-S,the lead-based zero-power nuclear reactor CLEAR-0,and the lead-based virtual reactor CLEAR-V are under realization.展开更多
In recent years, significant research efforts have been made to optimize the lithography processes. Liu et al.[1](Nat.Commun, 2024, https://doi.org/10.1038/s41467-024-46743-5)pioneered a new multi-photon lithography t...In recent years, significant research efforts have been made to optimize the lithography processes. Liu et al.[1](Nat.Commun, 2024, https://doi.org/10.1038/s41467-024-46743-5)pioneered a new multi-photon lithography technology in which light field and matter are co-confined, significantly exceeding the limitations of traditional lithography technology. In this news and views, we introduce this work to readers.展开更多
Lithography is a Key enabling technique in modern micro/nano scale technology.Achieving the optimal trade-off between resolution,throughput,and cost remains a central focus in the ongoing development.However,current l...Lithography is a Key enabling technique in modern micro/nano scale technology.Achieving the optimal trade-off between resolution,throughput,and cost remains a central focus in the ongoing development.However,current lithographic techniques such as direct-write,projection,and extreme ultraviolet lithography achieve higher resolution at the expense of increased complexity in optical systems or the use of shorter-wavelength light sources,thus raising the overall cost of production.Here,we present a cost-effective and wafer-level perfect conformal contact lithography at the diffraction limit.By leveraging a transferable photoresist,the technique ensures optimal contact between the mask and photoresist with zero-gap,facilitating the transfer of patterns at the diffraction limit while maintaining high fidelity and uniformity across large wafers.This technique applies to a wide range of complex surfaces,including non-conductive glass surfaces,flexible substrates,and curved surfaces.The proposed technique expands the potential of contact photolithography for novel device architectures and practic al manufacturing processes.展开更多
Chitosan(CS)-based nanocomposites have been studied in various fields,requiring a more facile and efficient technique to fabricate nanoparticles with customized structures.In this study,Ag@methacrylamide CS/poly(ethyl...Chitosan(CS)-based nanocomposites have been studied in various fields,requiring a more facile and efficient technique to fabricate nanoparticles with customized structures.In this study,Ag@methacrylamide CS/poly(ethylene glycol)diacrylate(Ag@MP)micropatterns are successfully fabricated by femtosecond laser maskless optical projection lithography(Fs-MOPL)for the first time.The formation mechanism of core-shell nanomaterial is demonstrated by the local surface plasmon resonances and the nucleation and growth theory.Amino and hydroxyl groups greatly affect the number of Ag@MP nanocomposites,which is further verified by replacing MCS with methacrylated bovine serum albumin and hyaluronic acid methacryloyl,respectively.Besides,the performance of the surface-enhanced Raman scattering,cytotoxicity,cell proliferation,and antibacterial was investigated on Ag@MP micropatterns.Therefore,the proposed protocol to prepare hydrogel core-shell micropattern by the home-built Fs-MOPL technique is prospective for potential applications in the biomedical and biotechnological fields,such as biosensors,cell imaging,and antimicrobial.展开更多
Block copolymer(BCP) nanolithography offers potential beyond traditional photolithographic limits, yet reliably producing low-defect, perpendicular domains remains challenging. We introduce a microenvironmentdriven is...Block copolymer(BCP) nanolithography offers potential beyond traditional photolithographic limits, yet reliably producing low-defect, perpendicular domains remains challenging. We introduce a microenvironmentdriven isothermal annealing method for directed self-assembly of BCP thin films. By annealing films at stable temperature in a quasi-sealed, inert-gas chamber, our approach promotes highly uniform perpendicular lamellar nanopatterns over large areas, effectively mitigating environmental fluctuations and emulating solvent-vapor annealing without solvent exposure. Resulting BCP structures demonstrate enhanced spatial coherence and notably low defect density. Furthermore, we successfully transfer these nanopatterns into precise metal nano-line arrays,confirming the method's capability for high-fidelity pattern replication. This scalable, solvent-free technique provides a robust, reliable route for high-resolution nanopatterning in advanced semiconductor manufacturing.展开更多
Optical proximity correction (OPC) systems require an accurate and fast way to predict how patterns will be transferred to the wafer.Based on Gabor's 'reduction to principal waves',a partially coherent ima...Optical proximity correction (OPC) systems require an accurate and fast way to predict how patterns will be transferred to the wafer.Based on Gabor's 'reduction to principal waves',a partially coherent imaging system can be represented as a superposition of coherent imaging systems,so an accurate and fast sparse aerial image intensity calculation algorithm for lithography simulation is presented based on convolution kernels,which also include simulating the lateral diffusion and some mask processing effects via Gaussian filter.The simplicity of this model leads to substantial computational and analytical benefits.Efficiency of this method is also shown through simulation results.展开更多
A new method for determining proximity parameters α,β ,and η in electron beam lithography is introduced on the assumption that the point exposure spread function is composed of two Gaussians.A single line i...A new method for determining proximity parameters α,β ,and η in electron beam lithography is introduced on the assumption that the point exposure spread function is composed of two Gaussians.A single line is used as test pattern to determine proximity effect parameters and the normalization approach is adopted in experimental data transaction in order to eliminate the need of measuring exposure clearing dose of the resist.Furthermore,the parameters acquired by this method are successfully used for proximity effect correction in electron beam lithography on the same experimental conditions.展开更多
Silicon crystal-facet-dependent nanostructures have been successfully fabricated on a （100）-oriented silicon-oninsulator wafer using electron-beam lithography and the silicon anisotropic wet etching technique. This ...Silicon crystal-facet-dependent nanostructures have been successfully fabricated on a （100）-oriented silicon-oninsulator wafer using electron-beam lithography and the silicon anisotropic wet etching technique. This technique takes advantage of the large difference in etching properties for different crystallographic planes in alkaline solution. The minimum size of the trapezoidal top for those Si nanostructures can be reduced to less than 10nm. Scanning electron microscopy （SEM） and atomic force microscopy （AFM） observations indicate that the etched nanostructures have controllable shapes and smooth surfaces.展开更多
The JEOL JBX-5000LS is a vector type machine.The system hardware features an ion-pumped column,a LaB 6 electron emitter,25kV and 50kV accelerating voltage,and a turbo-pumped sample chamber.The resolution,stability,st...The JEOL JBX-5000LS is a vector type machine.The system hardware features an ion-pumped column,a LaB 6 electron emitter,25kV and 50kV accelerating voltage,and a turbo-pumped sample chamber.The resolution,stability,stitching and overlay of this system are evaluated.The system can write complex patterns at dimensions down to 30nm.The demonstrated overlay accuracy of this system is better than 40nm.展开更多
The 193 nm deep-ultraviolet(DUV)laser plays a critical role in advanced semiconductor chip manufacturing[1,2],micro-nano material characterization[3,4]and biomedical analysis[5,6],due to its high spatial resolution an...The 193 nm deep-ultraviolet(DUV)laser plays a critical role in advanced semiconductor chip manufacturing[1,2],micro-nano material characterization[3,4]and biomedical analysis[5,6],due to its high spatial resolution and short wavelength.Efficient and compact 193 nm DUV laser source thus becomes a hot research area.Currently,193 nm Ar F excimer gas laser is widely employed in DUV lithography systems and serves as the enabling technology for 7 and 5 nm semiconductor fabrication.展开更多
We report a type-I Ga Sb-based laterally coupled distributed-feedback（LC-DFB） laser with shallow-etched gratings operating a continuous wave at room temperature without re-growth process. Second-order Bragg gratings...We report a type-I Ga Sb-based laterally coupled distributed-feedback（LC-DFB） laser with shallow-etched gratings operating a continuous wave at room temperature without re-growth process. Second-order Bragg gratings are fabricated alongside the ridge waveguide by interference lithography. Index-coupled LC-DFB laser with a cavity of 1500 μm achieves single longitudinal mode continuous-wave operation at 20℃ with side mode suppression ratio（SMSR） as high as 24 dB.The maximum single mode continuous-wave output power is about 10 mW at room temperature（uncoated facet）. A low threshold current density of 230 A/cm^2 is achieved with differential quantum efficiency estimated to be 93 mW/A. The laser shows a good wavelength stability against drive current and working temperature.展开更多
The use of an attenuated total reflection-coupling mode of prism coated with metal film to excite the interference of the surface plasmon polaritons （SPPs） was proposed for periodic patterning with a resolution of s...The use of an attenuated total reflection-coupling mode of prism coated with metal film to excite the interference of the surface plasmon polaritons （SPPs） was proposed for periodic patterning with a resolution of subwavelength scale. High intensity of electric field can be obtained because of the coupling between SPPs and evanescence under a resonance condition, which can reduce exposure time and improve contrast. In this paper, several critical parameters for maskless surface plasmon resonant lithography are described, and the preliminary simulation based on a finite difference timedomain technique agrees well with the theoretical analysis, which demonstrates this scheme and provides the theoretical basis for further experiments.展开更多
Nanoimprint lithography(NIL) is an emerging micro/nano-patterning technique,which is a high-resolution,high-throughput and yet simple fabrication process.According to International Technology Roadmap for Semiconductor...Nanoimprint lithography(NIL) is an emerging micro/nano-patterning technique,which is a high-resolution,high-throughput and yet simple fabrication process.According to International Technology Roadmap for Semiconductor(ITRS),NIL has emerged as the next generation lithography candidate for the22 nm and 16 nm technological nodes.In this paper,we present an overview of nanoimprint lithography.The classfication,research focus,critical issues,and the future of nanoimprint lithography are intensively elaborated.A pattern as small as 2.4 nm has been demonstrated.Full-wafer nanoimprint lithography has been completed on a 12-inch wafer.Recently,12.5 nm pattern resolution through soft molecular scale nanoimprint lithography has been achieved by EV Group,a leading nanoimprint lithography technology supplier.展开更多
Optical true delay lines(OTDLs)of low propagation losses,small footprints and high tuning speeds and efficiencies are of critical importance for various photonic applications.Here,we report fabrication of electro-opti...Optical true delay lines(OTDLs)of low propagation losses,small footprints and high tuning speeds and efficiencies are of critical importance for various photonic applications.Here,we report fabrication of electro-optically switchable OTDLs on lithium niobate on insulator using photolithography assisted chemo-mechanical etching.Our device consists of several low-loss optical waveguides of different lengths which are consecutively connected by electro-optical switches to generate different amounts of time delay.The fabricated OTLDs show an ultra-low propagation loss of^0.03dB/cm for waveguide lengths well above 100 cm.展开更多
The development of polymeric optical materials with a higher refractive index,transparency in the visible spectrum region and easier processability is increasingly desirable for advanced optical applications such as m...The development of polymeric optical materials with a higher refractive index,transparency in the visible spectrum region and easier processability is increasingly desirable for advanced optical applications such as microlenses,image sensors,and organic light-emitting diodes.Most acrylates have a low refractive index(around 1.50)which does not meet the high perfo rmance requirements of advanced optical materials.In this research,three novel acrylates were synthesized via a facile one-step approach and used to fabricate optical transparent polymers.All of the polymers reveal good optical properties including high transparency(≥90%)in the visible spectrum region and high refractive index values(1.6363)at 550 nm.Moreover,nanostructures of these acrylate polymers with various feature sizes including nanogratings and photonic crystals were successfully fabricated using nanoimprint lithography.These results indicate that these acrylates can be used in a wide range of optical and optoelectronic devices where nanopatterned films with high refractive index and transparency are required.展开更多
ASET, Association of Super-advanced Electronics Technologies, has been taking the initiative in developing EUV lithography technology in Japan for the past three years. The aspherical mirror metrology using a visible ...ASET, Association of Super-advanced Electronics Technologies, has been taking the initiative in developing EUV lithography technology in Japan for the past three years. The aspherical mirror metrology using a visible light point diffraction interferometer (PDI), the wave front measurement using an at-wavelength PDI, and an at wavelength reflectometry for multilayers, various imaging simulations, multilayer coatings for the mask, the development of absorber materials for mask patterning, the mask substrate cleaning technique, and various photoresist processes have been developed. The visible light PDI employs a 0.5-μm pinhole as an aperture to generate an ideal spherical wave front and can measure a 0.3-N A mirror maximum. The at-wavelength PDI can measure the wave front error of the projection optics. The at-wavelength reflectometer can measure the reflectivity of multilayers and the round-robin test is taking place among ASET, the ALS in Lawrence Berkeley, and BESSY in Germany. The mask cleaning technique employs a supersonic hydro-cleaning technique. We have confirmed that the single layer resists can be used for EUV lithography.展开更多
Direct-write atom lithography,one of the potential nanofabrication techniques,is restricted by some difficulties in producing optical masks for the deposition of complex structures.In order to make further progress,a ...Direct-write atom lithography,one of the potential nanofabrication techniques,is restricted by some difficulties in producing optical masks for the deposition of complex structures.In order to make further progress,a structured mirror array is developed to transversely collimate the chromium atomic beam in two dimensions.The best collimation is obtained when the laser red detunes by natural line-width of transition 7S3 → 7P40 of the chromium atom.The collimation ratio is 0.45 vertically（in x axis）,and it is 0.55 horizontally（in y axis）.The theoretical model is also simulated,and success of our structured mirror array is achieved.展开更多
We present an all-e-beam lithography （EBL） process for the patterning of photonic crystal waveguides. The whole device structures are exposed in two steps. Holes constituting the photonic crystal lattice and defects...We present an all-e-beam lithography （EBL） process for the patterning of photonic crystal waveguides. The whole device structures are exposed in two steps. Holes constituting the photonic crystal lattice and defects are first exposed with a small exposure step size （less than 10nm）. With the introduction of the additional proximity effect to compensate the original proximity effect, the shape, size, and position of the holes can be well controlled. The second step is the exposure of the access waveguides at a larger step size （about 30nm） to improve the scan speed of the EBL. The influence of write-field stitching error can be alleviated by replacing the original waveguides with tapered waveguides at the joint of adjacent write-fields. It is found experimentally that a higher exposure efficiency is achieved with a larger step size;however,a larger step size requires a higher dose.展开更多
文摘In 2011,the Chinese Academy of Sciences launched an engineering project to develop an acceleratordriven subcritical system(ADS)for nuclear waste transmutation.The China Lead-based Reactor(CLEAR),proposed by the Institute of Nuclear Energy Safety Technology,was selected as the reference reactor for ADS development,as well as for the technology development of the Generation IV lead-cooled fast reactor.The conceptual design of CLEAR-I with 10 MW thermal power has been completed.KYLIN series lead-bismuth eutectic experimental loops have been constructed to investigate the technologies of the coolant,key components,structural materials,fuel assembly,operation,and control.In order to validate and test the key components and integrated operating technology of the lead-based reactor,the lead alloy-cooled non-nuclear reactor CLEAR-S,the lead-based zero-power nuclear reactor CLEAR-0,and the lead-based virtual reactor CLEAR-V are under realization.
基金supported by Xishan-Tsinghua University Industry University Research Deep Integration Special Projectby Beijing Natural Science Foundation–Xiaomi Innovation Joint Fund (Grant No. L233009)by National Natural Science Foundation of China under Grant No. 62374099。
文摘In recent years, significant research efforts have been made to optimize the lithography processes. Liu et al.[1](Nat.Commun, 2024, https://doi.org/10.1038/s41467-024-46743-5)pioneered a new multi-photon lithography technology in which light field and matter are co-confined, significantly exceeding the limitations of traditional lithography technology. In this news and views, we introduce this work to readers.
基金supported by the National Key Research and Development Program of China (2022YFB4602600)National Natural Science Foundation of China (Grant Nos. 52425508 & 52221001)the Hunan Provincial Natural Science Foundation of China (2025JJ60286)。
文摘Lithography is a Key enabling technique in modern micro/nano scale technology.Achieving the optimal trade-off between resolution,throughput,and cost remains a central focus in the ongoing development.However,current lithographic techniques such as direct-write,projection,and extreme ultraviolet lithography achieve higher resolution at the expense of increased complexity in optical systems or the use of shorter-wavelength light sources,thus raising the overall cost of production.Here,we present a cost-effective and wafer-level perfect conformal contact lithography at the diffraction limit.By leveraging a transferable photoresist,the technique ensures optimal contact between the mask and photoresist with zero-gap,facilitating the transfer of patterns at the diffraction limit while maintaining high fidelity and uniformity across large wafers.This technique applies to a wide range of complex surfaces,including non-conductive glass surfaces,flexible substrates,and curved surfaces.The proposed technique expands the potential of contact photolithography for novel device architectures and practic al manufacturing processes.
基金the National Natural Science Foundation of China(NSFC,Grant Nos.61975213,61475164,51901234,and 61205194)National Key R&D Program of China(Grant Nos.2017YFB1104300and 2016YFA0200500)+2 种基金International Partnership Program of Chinese Academy of Sciences(GJHZ2021130)Cooperative R&D Projects between Austria,FFG and China,CAS(GJHZ1720)supported by JSPS Bilateral Program Number JPJSBP120217203。
文摘Chitosan(CS)-based nanocomposites have been studied in various fields,requiring a more facile and efficient technique to fabricate nanoparticles with customized structures.In this study,Ag@methacrylamide CS/poly(ethylene glycol)diacrylate(Ag@MP)micropatterns are successfully fabricated by femtosecond laser maskless optical projection lithography(Fs-MOPL)for the first time.The formation mechanism of core-shell nanomaterial is demonstrated by the local surface plasmon resonances and the nucleation and growth theory.Amino and hydroxyl groups greatly affect the number of Ag@MP nanocomposites,which is further verified by replacing MCS with methacrylated bovine serum albumin and hyaluronic acid methacryloyl,respectively.Besides,the performance of the surface-enhanced Raman scattering,cytotoxicity,cell proliferation,and antibacterial was investigated on Ag@MP micropatterns.Therefore,the proposed protocol to prepare hydrogel core-shell micropattern by the home-built Fs-MOPL technique is prospective for potential applications in the biomedical and biotechnological fields,such as biosensors,cell imaging,and antimicrobial.
基金supported by the National Natural Science Foundation of China (Grant Nos.U20A20168 and 62404120)the National Key R&D Program (Grant No.2022YFB3204100)+2 种基金the Postdoctoral Fellowship Program of CPSF (Grant Nos.GZB20240335 and GZC20231216)the China Postdoctoral Science Foundation (Grant No.2025T180151)the Initiative Scientific Research Program of the School of Integrated Circuits,Tsinghua University。
文摘Block copolymer(BCP) nanolithography offers potential beyond traditional photolithographic limits, yet reliably producing low-defect, perpendicular domains remains challenging. We introduce a microenvironmentdriven isothermal annealing method for directed self-assembly of BCP thin films. By annealing films at stable temperature in a quasi-sealed, inert-gas chamber, our approach promotes highly uniform perpendicular lamellar nanopatterns over large areas, effectively mitigating environmental fluctuations and emulating solvent-vapor annealing without solvent exposure. Resulting BCP structures demonstrate enhanced spatial coherence and notably low defect density. Furthermore, we successfully transfer these nanopatterns into precise metal nano-line arrays,confirming the method's capability for high-fidelity pattern replication. This scalable, solvent-free technique provides a robust, reliable route for high-resolution nanopatterning in advanced semiconductor manufacturing.
文摘Optical proximity correction (OPC) systems require an accurate and fast way to predict how patterns will be transferred to the wafer.Based on Gabor's 'reduction to principal waves',a partially coherent imaging system can be represented as a superposition of coherent imaging systems,so an accurate and fast sparse aerial image intensity calculation algorithm for lithography simulation is presented based on convolution kernels,which also include simulating the lateral diffusion and some mask processing effects via Gaussian filter.The simplicity of this model leads to substantial computational and analytical benefits.Efficiency of this method is also shown through simulation results.
文摘A new method for determining proximity parameters α,β ,and η in electron beam lithography is introduced on the assumption that the point exposure spread function is composed of two Gaussians.A single line is used as test pattern to determine proximity effect parameters and the normalization approach is adopted in experimental data transaction in order to eliminate the need of measuring exposure clearing dose of the resist.Furthermore,the parameters acquired by this method are successfully used for proximity effect correction in electron beam lithography on the same experimental conditions.
文摘Silicon crystal-facet-dependent nanostructures have been successfully fabricated on a （100）-oriented silicon-oninsulator wafer using electron-beam lithography and the silicon anisotropic wet etching technique. This technique takes advantage of the large difference in etching properties for different crystallographic planes in alkaline solution. The minimum size of the trapezoidal top for those Si nanostructures can be reduced to less than 10nm. Scanning electron microscopy （SEM） and atomic force microscopy （AFM） observations indicate that the etched nanostructures have controllable shapes and smooth surfaces.
文摘The JEOL JBX-5000LS is a vector type machine.The system hardware features an ion-pumped column,a LaB 6 electron emitter,25kV and 50kV accelerating voltage,and a turbo-pumped sample chamber.The resolution,stability,stitching and overlay of this system are evaluated.The system can write complex patterns at dimensions down to 30nm.The demonstrated overlay accuracy of this system is better than 40nm.
基金supported by the National Natural Science Foundation of China(Grant Nos.62450006,62304217,62274157,62127807,62234011,62034008,62074142,62074140)Tianshan Innovation Team Program(Grant No.2022TSYCTD0005)+1 种基金Strategic Priority Research Program of the Chinese Academy of Sciences(Grant No.XDB0880000)Youth Innovation Promotion Association of the Chinese Academy of Sciences(Grant Nos.2023124,Y2023032)。
文摘The 193 nm deep-ultraviolet(DUV)laser plays a critical role in advanced semiconductor chip manufacturing[1,2],micro-nano material characterization[3,4]and biomedical analysis[5,6],due to its high spatial resolution and short wavelength.Efficient and compact 193 nm DUV laser source thus becomes a hot research area.Currently,193 nm Ar F excimer gas laser is widely employed in DUV lithography systems and serves as the enabling technology for 7 and 5 nm semiconductor fabrication.
基金Project supported by the National Key Basic Research Program of China(Grant Nos.2014CB643903 and 2013CB932904)the National Special Funds for the Development of Major Research Equipment and Instruments,China(Grant No.2012YQ140005)+1 种基金the National Natural Science Foundation of China(Grant Nos.61435012,61274013,61306088,and 61290303)the Strategic Priority Research Program(B)of the Chinese Academy of Sciences(Grant No.XDB01010200)
文摘We report a type-I Ga Sb-based laterally coupled distributed-feedback（LC-DFB） laser with shallow-etched gratings operating a continuous wave at room temperature without re-growth process. Second-order Bragg gratings are fabricated alongside the ridge waveguide by interference lithography. Index-coupled LC-DFB laser with a cavity of 1500 μm achieves single longitudinal mode continuous-wave operation at 20℃ with side mode suppression ratio（SMSR） as high as 24 dB.The maximum single mode continuous-wave output power is about 10 mW at room temperature（uncoated facet）. A low threshold current density of 230 A/cm^2 is achieved with differential quantum efficiency estimated to be 93 mW/A. The laser shows a good wavelength stability against drive current and working temperature.
基金supported by the National Basic Research of China (Grant No 2006CD302900-2)the National Natural Science Foundation of China (Grant No 60676024)the Specialized Research Fund of China for the Doctoral Program of Higher Education (Grant No 20060610006)
文摘The use of an attenuated total reflection-coupling mode of prism coated with metal film to excite the interference of the surface plasmon polaritons （SPPs） was proposed for periodic patterning with a resolution of subwavelength scale. High intensity of electric field can be obtained because of the coupling between SPPs and evanescence under a resonance condition, which can reduce exposure time and improve contrast. In this paper, several critical parameters for maskless surface plasmon resonant lithography are described, and the preliminary simulation based on a finite difference timedomain technique agrees well with the theoretical analysis, which demonstrates this scheme and provides the theoretical basis for further experiments.
基金supported by Natural Science Foundation of Shanghai(No.11ZR1432100)Shanghai Postdoctoral Science Foundation(11R21420900)
文摘Nanoimprint lithography(NIL) is an emerging micro/nano-patterning technique,which is a high-resolution,high-throughput and yet simple fabrication process.According to International Technology Roadmap for Semiconductor(ITRS),NIL has emerged as the next generation lithography candidate for the22 nm and 16 nm technological nodes.In this paper,we present an overview of nanoimprint lithography.The classfication,research focus,critical issues,and the future of nanoimprint lithography are intensively elaborated.A pattern as small as 2.4 nm has been demonstrated.Full-wafer nanoimprint lithography has been completed on a 12-inch wafer.Recently,12.5 nm pattern resolution through soft molecular scale nanoimprint lithography has been achieved by EV Group,a leading nanoimprint lithography technology supplier.
基金Supported by the National Key R&D Program of China(Grant No.2019YFA0705000)the National Natural Science Foundation of China(Grant Nos.11734009,61590934,and 11874375)+1 种基金the Strategic Priority Research Program of CAS(Grant No.XDB16030300)the Key Project of the Shanghai Science and Technology Committee(Grant No.17JC1400400).
文摘Optical true delay lines(OTDLs)of low propagation losses,small footprints and high tuning speeds and efficiencies are of critical importance for various photonic applications.Here,we report fabrication of electro-optically switchable OTDLs on lithium niobate on insulator using photolithography assisted chemo-mechanical etching.Our device consists of several low-loss optical waveguides of different lengths which are consecutively connected by electro-optical switches to generate different amounts of time delay.The fabricated OTLDs show an ultra-low propagation loss of^0.03dB/cm for waveguide lengths well above 100 cm.
基金supported by the Molecular Foundry,Lawrence Berkeley National Laboratory,which is supported by the Office of Science and Office of Basic Energy Sciences of the U.S.Department of Energy under Contract No.DE-AC02-05CH11231supported by National Natural Science Foundation of China (No.51573011)+2 种基金Natural Foundation of Jiangsu Province (No. BK20150272)Beijing Laboratory of Biomedical Materialsthe scholarship support from the program of the China Scholarship Council (No.201706880022) for study at Lawrence Berkeley National Laboratory
文摘The development of polymeric optical materials with a higher refractive index,transparency in the visible spectrum region and easier processability is increasingly desirable for advanced optical applications such as microlenses,image sensors,and organic light-emitting diodes.Most acrylates have a low refractive index(around 1.50)which does not meet the high perfo rmance requirements of advanced optical materials.In this research,three novel acrylates were synthesized via a facile one-step approach and used to fabricate optical transparent polymers.All of the polymers reveal good optical properties including high transparency(≥90%)in the visible spectrum region and high refractive index values(1.6363)at 550 nm.Moreover,nanostructures of these acrylate polymers with various feature sizes including nanogratings and photonic crystals were successfully fabricated using nanoimprint lithography.These results indicate that these acrylates can be used in a wide range of optical and optoelectronic devices where nanopatterned films with high refractive index and transparency are required.
文摘ASET, Association of Super-advanced Electronics Technologies, has been taking the initiative in developing EUV lithography technology in Japan for the past three years. The aspherical mirror metrology using a visible light point diffraction interferometer (PDI), the wave front measurement using an at-wavelength PDI, and an at wavelength reflectometry for multilayers, various imaging simulations, multilayer coatings for the mask, the development of absorber materials for mask patterning, the mask substrate cleaning technique, and various photoresist processes have been developed. The visible light PDI employs a 0.5-μm pinhole as an aperture to generate an ideal spherical wave front and can measure a 0.3-N A mirror maximum. The at-wavelength PDI can measure the wave front error of the projection optics. The at-wavelength reflectometer can measure the reflectivity of multilayers and the round-robin test is taking place among ASET, the ALS in Lawrence Berkeley, and BESSY in Germany. The mask cleaning technique employs a supersonic hydro-cleaning technique. We have confirmed that the single layer resists can be used for EUV lithography.
基金Project supported by the Shanghai Nanoscience Foundation,China (Grant Nos. 0852nm07000 and 0952nm07000)the National Natural Science Foundation of China (Grant Nos. 10804084 and 91123022)+1 种基金the National Key Technology R & D Program,China (Grant No. 2006BAF06B08)the Specialized Research Fund for the Doctoral Program of Ministry of High Education of China (Grant No. 200802471008)
文摘Direct-write atom lithography,one of the potential nanofabrication techniques,is restricted by some difficulties in producing optical masks for the deposition of complex structures.In order to make further progress,a structured mirror array is developed to transversely collimate the chromium atomic beam in two dimensions.The best collimation is obtained when the laser red detunes by natural line-width of transition 7S3 → 7P40 of the chromium atom.The collimation ratio is 0.45 vertically（in x axis）,and it is 0.55 horizontally（in y axis）.The theoretical model is also simulated,and success of our structured mirror array is achieved.
文摘We present an all-e-beam lithography （EBL） process for the patterning of photonic crystal waveguides. The whole device structures are exposed in two steps. Holes constituting the photonic crystal lattice and defects are first exposed with a small exposure step size （less than 10nm）. With the introduction of the additional proximity effect to compensate the original proximity effect, the shape, size, and position of the holes can be well controlled. The second step is the exposure of the access waveguides at a larger step size （about 30nm） to improve the scan speed of the EBL. The influence of write-field stitching error can be alleviated by replacing the original waveguides with tapered waveguides at the joint of adjacent write-fields. It is found experimentally that a higher exposure efficiency is achieved with a larger step size;however,a larger step size requires a higher dose.
