In this paper, we present an improved high-frequency equivalent circuit for SiGe heterojunction bipolar transistors（HBTs） with a CBE layout, where we consider the distributed effects along the base region. The actua...In this paper, we present an improved high-frequency equivalent circuit for SiGe heterojunction bipolar transistors（HBTs） with a CBE layout, where we consider the distributed effects along the base region. The actual device structure is divided into three parts： a link base region under a spacer oxide, an intrinsic transistor region under the emitter window,and an extrinsic base region. Each region is considered as a two-port network, and is composed of a distributed resistance and capacitance. We solve the admittance parameters by solving the transmission-line equation. Then, we obtain the smallsignal equivalent circuit depending on the reasonable approximations. Unlike previous compact models, in our proposed model, we introduce an additional internal base node, and the intrinsic base resistance is shifted into this internal base node,which can theoretically explain the anomalous change in the intrinsic bias-dependent collector resistance in the conventional compact model.展开更多
[Objectives] This study was to find out the effect of trap space layout on the trapped number of Spodoptera litura in tobacco field. [Methods]From2015 to 2017,investigations were made using different hanging heights,d...[Objectives] This study was to find out the effect of trap space layout on the trapped number of Spodoptera litura in tobacco field. [Methods]From2015 to 2017,investigations were made using different hanging heights,distances( densities) and equidistant plane layout in the tobacco planting area in central Guizhou Province. [Results] The trapped number of S. litura was different at different hanging heights of the trap,and some had the difference reached the5% significant level in the trapped number. The optimum hanging height was 1. 5-2. 0 m. The trapping effect was the best at the field layout distance of20. 0-30. 0 m( density of 5-8 traps/hm^2). Under the conditions of even distribution at the equal distance between traps of 40.0 m in the field,the accumulated trapped number of S. litura from April to August was in the order of outer ring > central ring > inner ring,presenting the zonal distribution. The difference in the trapped numbers was significant among different rings,reaching the 5% significant level. [Conclusions]This study provided theoretical bases for the physiochemical control of S. litura in tobacco field.展开更多
Firstly, the distribution of main biomass resources （like straw, livestock manure and forestry residue） in counties of Jilin Province, and then according to the annual output of biomass in each county, the energy re...Firstly, the distribution of main biomass resources （like straw, livestock manure and forestry residue） in counties of Jilin Province, and then according to the annual output of biomass in each county, the energy regeneration of biomass and project distribution of organic fertilizer were studied, finally the direct economic effect and environmental effect of biomass developed recently were calculated.展开更多
This paper studies the total ionizing dose radiation effects on MOS （metal-oxide-semiconductor） transistors with normal and enclosed gate layout in a standard commercial CMOS （compensate MOS） bulk process. The lea...This paper studies the total ionizing dose radiation effects on MOS （metal-oxide-semiconductor） transistors with normal and enclosed gate layout in a standard commercial CMOS （compensate MOS） bulk process. The leakage current, threshold voltage shift, and transconductance of the devices were monitored before and after γ-ray irradiation. The parameters of the devices with different layout under different bias condition during irradiation at different total dose are investigated. The results show that the enclosed layout not only effectively eliminates the leakage but also improves the performance of threshold voltage and transconductance for NMOS （n-type channel MOS） transistors. The experimental results also indicate that analogue bias during irradiation is the worst case for enclosed gate NMOS. There is no evident different behaviour observed between normal PMOS （p-type channel MOS） transistors and enclosed gate PMOS transistors.展开更多
基金Project supported by the National Natural Science Funds of China(Grant Nos.61574056 and 61504156)the Natural Science Foundation of Shanghai,China(Grant No.14ZR1412000)+1 种基金Shanghai Sailing Program,China(Grant No.17YF1404700)the Science and Technology Commission of Shanghai Municipality,China(Grant No.14DZ2260800)
文摘In this paper, we present an improved high-frequency equivalent circuit for SiGe heterojunction bipolar transistors（HBTs） with a CBE layout, where we consider the distributed effects along the base region. The actual device structure is divided into three parts： a link base region under a spacer oxide, an intrinsic transistor region under the emitter window,and an extrinsic base region. Each region is considered as a two-port network, and is composed of a distributed resistance and capacitance. We solve the admittance parameters by solving the transmission-line equation. Then, we obtain the smallsignal equivalent circuit depending on the reasonable approximations. Unlike previous compact models, in our proposed model, we introduce an additional internal base node, and the intrinsic base resistance is shifted into this internal base node,which can theoretically explain the anomalous change in the intrinsic bias-dependent collector resistance in the conventional compact model.
基金Supported by the Science and Technology Project of Guizhou Tobacco Company,China(201510)
文摘[Objectives] This study was to find out the effect of trap space layout on the trapped number of Spodoptera litura in tobacco field. [Methods]From2015 to 2017,investigations were made using different hanging heights,distances( densities) and equidistant plane layout in the tobacco planting area in central Guizhou Province. [Results] The trapped number of S. litura was different at different hanging heights of the trap,and some had the difference reached the5% significant level in the trapped number. The optimum hanging height was 1. 5-2. 0 m. The trapping effect was the best at the field layout distance of20. 0-30. 0 m( density of 5-8 traps/hm^2). Under the conditions of even distribution at the equal distance between traps of 40.0 m in the field,the accumulated trapped number of S. litura from April to August was in the order of outer ring > central ring > inner ring,presenting the zonal distribution. The difference in the trapped numbers was significant among different rings,reaching the 5% significant level. [Conclusions]This study provided theoretical bases for the physiochemical control of S. litura in tobacco field.
基金Supported by the Science and Technology Development Plan of Jilin Province,China (20100641)Doctor Foundation of Northeast Dianli University (BSJXM-201002)
文摘Firstly, the distribution of main biomass resources （like straw, livestock manure and forestry residue） in counties of Jilin Province, and then according to the annual output of biomass in each county, the energy regeneration of biomass and project distribution of organic fertilizer were studied, finally the direct economic effect and environmental effect of biomass developed recently were calculated.
基金Project supported by the National Natural Science Foundation of China （Grant No 6037202/F010204）.
文摘This paper studies the total ionizing dose radiation effects on MOS （metal-oxide-semiconductor） transistors with normal and enclosed gate layout in a standard commercial CMOS （compensate MOS） bulk process. The leakage current, threshold voltage shift, and transconductance of the devices were monitored before and after γ-ray irradiation. The parameters of the devices with different layout under different bias condition during irradiation at different total dose are investigated. The results show that the enclosed layout not only effectively eliminates the leakage but also improves the performance of threshold voltage and transconductance for NMOS （n-type channel MOS） transistors. The experimental results also indicate that analogue bias during irradiation is the worst case for enclosed gate NMOS. There is no evident different behaviour observed between normal PMOS （p-type channel MOS） transistors and enclosed gate PMOS transistors.
