Lateral oxidation in vertical cavity surface emitting lasers （VCSELs） is described,and its characteristics are investigated.A linear growth law is found for stripe mesas. However, oxide growth （above 435℃ ） follo...Lateral oxidation in vertical cavity surface emitting lasers （VCSELs） is described,and its characteristics are investigated.A linear growth law is found for stripe mesas. However, oxide growth （above 435℃ ） follows a nonlinear law for the two geometry mesa structures which we employ in VCSEL. Theoretical analysis indicates that mesa structure geometry influences oxide growth rate at higher temperatures.展开更多
The internal oxidation behavior of Pd-40Ag-1M(M=Zr,Y)alloy wires has been studied in air at 800—1200℃.The relationship between the internal oxidation depth ξ and the reaction time t can be expressed as ξ= Kt^n,whe...The internal oxidation behavior of Pd-40Ag-1M(M=Zr,Y)alloy wires has been studied in air at 800—1200℃.The relationship between the internal oxidation depth ξ and the reaction time t can be expressed as ξ= Kt^n,where n=0.5—0.75.The higher the temperature,the larger the value of n is.The active elements Zr and Y show different internal oxidation characters.For the alloys eontaining Zr,the oxidation rate along the grain boundaries is about twice as high as that in grains,and“lateral oxidation”exists along the grain boundaries.For the alloys containing Y,the oxidation rates in grains and along the grain boundaries are roughly the same,and there is no“lateral oxidation”along the grain bounda- ries.The activation energies of both alloys are in the range of 120—150kJ/mol.Some prop- erties for oxidized alloys were studied.The mechanisms of the internal oxidation were dis- cussed.展开更多
The behaviors of lead zirconate titanate （PZT） deposited as the dielectric for high-voltage devices are investigated experimentally and theoretically. The devices demonstrate not only high breakdown voltages above 3...The behaviors of lead zirconate titanate （PZT） deposited as the dielectric for high-voltage devices are investigated experimentally and theoretically. The devices demonstrate not only high breakdown voltages above 350 V, but also excellent memory behaviors. A drain current–gate voltage （ID-VG） memory window of about 2.2 V is obtained at the sweep voltages of ±10 V for the 350-V laterally diffused metal oxide semiconductor （LDMOS）. The retention time of about 270 s is recorded for the LDMOS through a controlled ID-VG measurement. The LDMOS with memory behaviors has potential to be applied in future power conversion circuits to boost the performance of the energy conversion system.展开更多
The Al0.85Ga0.15As layers buried below the GaAs core layer with and without the SiO2 layer were successfully oxidized in a wet ambient environment.The experimental results show that the SiO2 layer has little impact on...The Al0.85Ga0.15As layers buried below the GaAs core layer with and without the SiO2 layer were successfully oxidized in a wet ambient environment.The experimental results show that the SiO2 layer has little impact on the lateral-wet-oxidation rate of the Al0.85Ga0.15 As layer.The contrast of the SEM image of the oxidized regions and the absence of As-related Raman peaks for samples with the SiO2 layer arise from the removal of As ingredients with the largest atomic number,which leads to improvements in the thermal stability of the oxidized layer.The PL intensities of samples with the SiO2 layer are much stronger than those without the SiO2 layer.The PL emission peak is almost unshifted with a slight broadening under the protection of the SiO2 layer.This is attributed to the SiO2 layer preventing oxidation damage to the GaAs capping layer.展开更多
文摘Lateral oxidation in vertical cavity surface emitting lasers （VCSELs） is described,and its characteristics are investigated.A linear growth law is found for stripe mesas. However, oxide growth （above 435℃ ） follows a nonlinear law for the two geometry mesa structures which we employ in VCSEL. Theoretical analysis indicates that mesa structure geometry influences oxide growth rate at higher temperatures.
文摘The internal oxidation behavior of Pd-40Ag-1M(M=Zr,Y)alloy wires has been studied in air at 800—1200℃.The relationship between the internal oxidation depth ξ and the reaction time t can be expressed as ξ= Kt^n,where n=0.5—0.75.The higher the temperature,the larger the value of n is.The active elements Zr and Y show different internal oxidation characters.For the alloys eontaining Zr,the oxidation rate along the grain boundaries is about twice as high as that in grains,and“lateral oxidation”exists along the grain boundaries.For the alloys containing Y,the oxidation rates in grains and along the grain boundaries are roughly the same,and there is no“lateral oxidation”along the grain bounda- ries.The activation energies of both alloys are in the range of 120—150kJ/mol.Some prop- erties for oxidized alloys were studied.The mechanisms of the internal oxidation were dis- cussed.
基金the National Basic Research Program of China(Grant No.50772019)the National Natural Science Foundation of China(Grant No.61204084)
文摘The behaviors of lead zirconate titanate （PZT） deposited as the dielectric for high-voltage devices are investigated experimentally and theoretically. The devices demonstrate not only high breakdown voltages above 350 V, but also excellent memory behaviors. A drain current–gate voltage （ID-VG） memory window of about 2.2 V is obtained at the sweep voltages of ±10 V for the 350-V laterally diffused metal oxide semiconductor （LDMOS）. The retention time of about 270 s is recorded for the LDMOS through a controlled ID-VG measurement. The LDMOS with memory behaviors has potential to be applied in future power conversion circuits to boost the performance of the energy conversion system.
基金supported by the National Research Project of China(Nos.60990315,60625402,61161130527)
文摘The Al0.85Ga0.15As layers buried below the GaAs core layer with and without the SiO2 layer were successfully oxidized in a wet ambient environment.The experimental results show that the SiO2 layer has little impact on the lateral-wet-oxidation rate of the Al0.85Ga0.15 As layer.The contrast of the SEM image of the oxidized regions and the absence of As-related Raman peaks for samples with the SiO2 layer arise from the removal of As ingredients with the largest atomic number,which leads to improvements in the thermal stability of the oxidized layer.The PL intensities of samples with the SiO2 layer are much stronger than those without the SiO2 layer.The PL emission peak is almost unshifted with a slight broadening under the protection of the SiO2 layer.This is attributed to the SiO2 layer preventing oxidation damage to the GaAs capping layer.
