We report an Al0.25Ga0.75N/GaN based lateral field emission device with a nanometer scale void channel. A -45 nm void channel is obtained by etching out the SiO2 sacrificial dielectric layer between the semiconductor ...We report an Al0.25Ga0.75N/GaN based lateral field emission device with a nanometer scale void channel. A -45 nm void channel is obtained by etching out the SiO2 sacrificial dielectric layer between the semiconductor emitter and the metal collector. Under an atmospheric environment instead of vacuum conditions, the OaN- based field emission device shows a low turn-on voltage of 2.3 V, a high emission current of -40 μA （line current density 2.3mA/cm） at a collector bias Vc = 3 V, and a low reverse leakage of 3nA at Vc = -3 V. These characteristics are attributed to the nanometer scale void channel as well as the high density of two-dimensional electron gas in the AlGaN/GaN heterojunction. This type of device may have potential applications in high frequency mieroelectronics or nanoelectronics.展开更多
Micromachined comb-drive electrostatic resonators with folded-cantilever beams were designed and fabricated. A combination of Rayleigh＇s method and finite-element analysis was used to calculate the resonant frequency...Micromachined comb-drive electrostatic resonators with folded-cantilever beams were designed and fabricated. A combination of Rayleigh＇s method and finite-element analysis was used to calculate the resonant frequency drift as we adjusted the device geometry and material parameters. Three micromachined lateral resonant resonators with different beam widths were fabricated. Their resonant frequencies were experimentally measured to be 64.5,147.2, and 255.5kHz, respectively, which are in good agreement with the simulated resonant frequency. It is shown that an improved frequency performance could be obtained on the poly 3C-SiC based device structural material systems with high Young＇s modulus.展开更多
Wheat powdery mildew caused by Blumeria graminis f.sp.tritici(Bgt)is an important disease worldwide.Detection of latent infection of leaves by the pathogen in late autumn is valuable for estimating the inoculum potent...Wheat powdery mildew caused by Blumeria graminis f.sp.tritici(Bgt)is an important disease worldwide.Detection of latent infection of leaves by the pathogen in late autumn is valuable for estimating the inoculum potential to assess disease risks in the spring.We developed a new tool for rapid detection and quantification of latent infection of seedlings by the pathogen.The method was based on recombinase polymerase amplification(RPA)coupled with an end-point detection via lateral flow device(LFD).The limit of detection is 100 agμL^(-1)of Bgt DNA,without noticeable interference from either other common wheat pathogens or wheat material(Triticum aestivum).It was evaluated on wheat seedlings for this accuracy and sensitivity in detecting latent infection of Bgt.We further extended this RPALFD assay to estimate the level of latent infection by Bgt based on imaging analysis.There was a strong correlation between the image-based and real-time PCR assay estimates of Bgt DNA.The present results suggested that this new tool can provide rapid and accurate quantification of Bgt in latently infected leaves and can be further development as an on-site monitoring tool.展开更多
基金Supported by the Natural Science Foundation of Jiangsu Province under Grant No BK20160400the Science and Technology Project of Suzhou under Grant No SZS201508
文摘We report an Al0.25Ga0.75N/GaN based lateral field emission device with a nanometer scale void channel. A -45 nm void channel is obtained by etching out the SiO2 sacrificial dielectric layer between the semiconductor emitter and the metal collector. Under an atmospheric environment instead of vacuum conditions, the OaN- based field emission device shows a low turn-on voltage of 2.3 V, a high emission current of -40 μA （line current density 2.3mA/cm） at a collector bias Vc = 3 V, and a low reverse leakage of 3nA at Vc = -3 V. These characteristics are attributed to the nanometer scale void channel as well as the high density of two-dimensional electron gas in the AlGaN/GaN heterojunction. This type of device may have potential applications in high frequency mieroelectronics or nanoelectronics.
文摘Micromachined comb-drive electrostatic resonators with folded-cantilever beams were designed and fabricated. A combination of Rayleigh＇s method and finite-element analysis was used to calculate the resonant frequency drift as we adjusted the device geometry and material parameters. Three micromachined lateral resonant resonators with different beam widths were fabricated. Their resonant frequencies were experimentally measured to be 64.5,147.2, and 255.5kHz, respectively, which are in good agreement with the simulated resonant frequency. It is shown that an improved frequency performance could be obtained on the poly 3C-SiC based device structural material systems with high Young＇s modulus.
基金supported by the funding from the National Natural Science Foundation of China(32072359)。
文摘Wheat powdery mildew caused by Blumeria graminis f.sp.tritici(Bgt)is an important disease worldwide.Detection of latent infection of leaves by the pathogen in late autumn is valuable for estimating the inoculum potential to assess disease risks in the spring.We developed a new tool for rapid detection and quantification of latent infection of seedlings by the pathogen.The method was based on recombinase polymerase amplification(RPA)coupled with an end-point detection via lateral flow device(LFD).The limit of detection is 100 agμL^(-1)of Bgt DNA,without noticeable interference from either other common wheat pathogens or wheat material(Triticum aestivum).It was evaluated on wheat seedlings for this accuracy and sensitivity in detecting latent infection of Bgt.We further extended this RPALFD assay to estimate the level of latent infection by Bgt based on imaging analysis.There was a strong correlation between the image-based and real-time PCR assay estimates of Bgt DNA.The present results suggested that this new tool can provide rapid and accurate quantification of Bgt in latently infected leaves and can be further development as an on-site monitoring tool.
