Ytterbium ion(Yb^(3+))-doped lasers are widely used in precision machining and precision measurement fields because of their high efficiency and high power,which are primarily based on solid-state lasers and fiber las...Ytterbium ion(Yb^(3+))-doped lasers are widely used in precision machining and precision measurement fields because of their high efficiency and high power,which are primarily based on solid-state lasers and fiber lasers.Here,we demonstrate an on-chip Yb^(3+)-doped thin-film lithium niobate(Yb:TFLN)Fabry-Perot microcavity laser.We achieve single-frequency laser operation at 1030 and 1060 nm with a side-mode suppression ratio above 30 dB,an emission linewidth below 40 pm,and an output power up to 1.5 mW at 1060 nm and 0.3 mW at 1030 nm.In addition,using the electro-optic effect of lithium niobate,we achieve a laser tuning efficiency of 4 pm/V.This work opens the path to on-chip high-power and mode-locked ultrafast laser output.展开更多
基金National Key Research and Development Program of China(2023YFB4604600)National Natural Science Foundation of China(12274133,12334014,12192251,12134001,12474378,12404379)+1 种基金Innovation Program for Quantum Science and Technology(2021ZD0301403)Fundamental Research Funds for the Central Universities,Engineering Research Center for Nanophotonics&Advanced Instrument,Ministry of Education,East China Normal University(2023nmc005)。
文摘Ytterbium ion(Yb^(3+))-doped lasers are widely used in precision machining and precision measurement fields because of their high efficiency and high power,which are primarily based on solid-state lasers and fiber lasers.Here,we demonstrate an on-chip Yb^(3+)-doped thin-film lithium niobate(Yb:TFLN)Fabry-Perot microcavity laser.We achieve single-frequency laser operation at 1030 and 1060 nm with a side-mode suppression ratio above 30 dB,an emission linewidth below 40 pm,and an output power up to 1.5 mW at 1060 nm and 0.3 mW at 1030 nm.In addition,using the electro-optic effect of lithium niobate,we achieve a laser tuning efficiency of 4 pm/V.This work opens the path to on-chip high-power and mode-locked ultrafast laser output.
