SrTiO3 thin films are epitaxially grown on DyScO3, LaAlO3 substrates with/without buffer layers of DyScO3 and SrRuO3 using laser-MBE. X-ray diffraction methods, such as high resolution X-ray diffraction, grazing incid...SrTiO3 thin films are epitaxially grown on DyScO3, LaAlO3 substrates with/without buffer layers of DyScO3 and SrRuO3 using laser-MBE. X-ray diffraction methods, such as high resolution X-ray diffraction, grazing incident X-ray diffraction, and reciprocal space mapping are used to investigate the lattice structure, dislocation density, in-plane lattice strain distribution along film thickness. From the measurement results, the effects of substrate on film lattice quality and microstructure are discussed.展开更多
分析了梯度折射率分别限制单量子阱 (GRIN-SCH-SQW)结构的特点以及对大功率半导体激光器特性的影响。利用分子束外延系统生长 Ga Al As/Ga As GRIN-SCH-SQW结构 ,经光荧光谱、X-射线双晶衍射、和载流子浓度测试 ,结果表明 ,该结构各参...分析了梯度折射率分别限制单量子阱 (GRIN-SCH-SQW)结构的特点以及对大功率半导体激光器特性的影响。利用分子束外延系统生长 Ga Al As/Ga As GRIN-SCH-SQW结构 ,经光荧光谱、X-射线双晶衍射、和载流子浓度测试 ,结果表明 ,该结构各参数均满足设计要求。应用此结构制成激光器阵列 ,室温准连续输出功率达5 8W(t=2 0 0 μs,f=5 0 Hz) ,峰值波长为 80 8nm。展开更多
基金Supported by National Natural Science Foundation of China (10774065)Science Foundation for Excellent Youth Scholars of Huaiyin Normal University (08QNZCK 005)
文摘SrTiO3 thin films are epitaxially grown on DyScO3, LaAlO3 substrates with/without buffer layers of DyScO3 and SrRuO3 using laser-MBE. X-ray diffraction methods, such as high resolution X-ray diffraction, grazing incident X-ray diffraction, and reciprocal space mapping are used to investigate the lattice structure, dislocation density, in-plane lattice strain distribution along film thickness. From the measurement results, the effects of substrate on film lattice quality and microstructure are discussed.
