Using native CMOS technology,EDA tool,and adopting full-custom design methodology,a laser diode driver for the use of STM-1 and STM-4 optical access network,is realized by CSMC-HJ 0.6μm CMOS technology to modulate la...Using native CMOS technology,EDA tool,and adopting full-custom design methodology,a laser diode driver for the use of STM-1 and STM-4 optical access network,is realized by CSMC-HJ 0.6μm CMOS technology to modulate laser diodes at 155Mb/s (STM-1),622Mb/s (STM-4) with adjustable modulation current from 0 to 50mA for an equivalent 50Ω load.The maximum modulation voltage is over 2.5V pp corresponding to a 3V DC bias for output stage.The time range of rise and fall from 360ps to 471ps is measured from the output voltage pulse.The RMS jitter is no more than 30ps for four bit rates.The power consumption is less than 410mW under a power supply voltage of 5V.According to the experimental results,the laser diode driver achieves the same level as their counterparts worldwide.展开更多
A DC-10Mb/s laser diode driver,compatible with TTL and CMOS levels,is presented. The optical power corresponding to‘1＇ and ‘0＇ can be set independently with resistors off-chip and stabilized with a closed loop. A ...A DC-10Mb/s laser diode driver,compatible with TTL and CMOS levels,is presented. The optical power corresponding to‘1＇ and ‘0＇ can be set independently with resistors off-chip and stabilized with a closed loop. A novel peak-to- peak optical power monitor and stabilization mechanism is introduced. The circuit, fabricated in a CSMC 0. 5μm mixed signal CMOS process, can provide 120mA maximum drive current and 0. 6dB extinction ration fluctuation over - 20 ＋ 80℃ ,which is independent of input pattern.展开更多
The SG-Ⅲlaser facility(SG-Ⅲ)is the largest laser driver for inertial confinement fusion(ICF)researches in China,which has 48 beamlines and can deliver 180 kJ ultraviolet laser energy in 3 ns.In order to meet the req...The SG-Ⅲlaser facility(SG-Ⅲ)is the largest laser driver for inertial confinement fusion(ICF)researches in China,which has 48 beamlines and can deliver 180 kJ ultraviolet laser energy in 3 ns.In order to meet the requirements of precise physics experiments,some new functionalities need to be added to SG-Ⅲand some intrinsic laser performances need upgrade.So at the end of SG-Ⅲ's engineering construction,the 2-year laser performance upgrade project started.This paper will introduce the newly added functionalities and the latest laser performance of SG-Ⅲ.With these function extensions and performance upgrade,SG-Ⅲis now fully prepared for precise ICF experiments and solidly paves the way towards fusion ignition.展开更多
This paper discusses the design of a 10 Gb/s laser diode driver implemented in SiGe BiCMOS technology. The laser diode driver is composed of an input buffer, a predriver circuit and an output current switch stage. Wit...This paper discusses the design of a 10 Gb/s laser diode driver implemented in SiGe BiCMOS technology. The laser diode driver is composed of an input buffer, a predriver circuit and an output current switch stage. With the current mode logic （CML） structure, the input buffer and the predriver circuit have the capability of transmission and amplification of high speed data. By employing MOS-HBT cascode structure as the output stage, the laser diode driver exhibits very high speed and efficiency working at the 10 Gb/s data rate. The core circuit is operated under a 3. 3 V supply, while the output stage is operated under 5.5 V for sufficient headroom across the laser diode. The chip occupies a die area of 600 μm × 800μm. Measurements on chip show clear electrical eye diagrams over 10 Gb/s, which can well meet the specifications defined by SDH STM64/SONET OC192 and a 10 Gb/s Ethemet eye mask. Under a 5. 5 V supply voltage, the maximum output swing is 3.0 V with a 50 12 load （the corresponding modulation current is 60 mA）, and the total power dissipation is 660 mW.展开更多
This paper presents the design and testing of a 15 Gbps non-return-to-zero(NRZ),30 Gbps 4-level pulse amplitude modulation(PAM4)configurable laser diode driver(LDD)implemented in 0.15-μm GaAs E-mode pHEMT technology....This paper presents the design and testing of a 15 Gbps non-return-to-zero(NRZ),30 Gbps 4-level pulse amplitude modulation(PAM4)configurable laser diode driver(LDD)implemented in 0.15-μm GaAs E-mode pHEMT technology.The driver bandwidth is enhanced by utilizing cross-coupled neutralization capacitors across the output stage.The output transmission-line back-termination,which absorbs signal reflections from the imperfectly matched load,is performed passively with on-chip 50-Ωresistors.The proposed 30 Gbps PAM4 LDD is implemented by combining two 15 Gbps-NRZ LDDs,as the high and low amplification paths,to generate PAM4 output current signal with levels of 0,40,80,and 120 mA when driving 25-Ωlasers.The high and low amplification paths can be used separately or simultaneously as a 15 Gbps-NRZ LDD.The measurement results show clear output eye diagrams at speeds of up to 15 and 30 Gbps for the NRZ and PAM4 drivers,respectively.At a maximum output current of 120 mA,the driver consumes 1.228 W from a single supply voltage of-5.2 V.The proposed driver shows a high current driving capability with a better output power to power dissipation ratio,which makes it suitable for driving high current distributed feedback(DFB)lasers.The chip occupies a total area of 0.7×1.3 mm^(2).展开更多
Light detection and ranging (LIDAR) based on time of flight (TOF) method is widely used in many fields related to distance measurement. LIDAR generally uses laser diode (LD) to emit the pulsed laser with high peak pow...Light detection and ranging (LIDAR) based on time of flight (TOF) method is widely used in many fields related to distance measurement. LIDAR generally uses laser diode (LD) to emit the pulsed laser with high peak power and short duration to ensure a large distance measurement range and eye safety. To achieve this goal, we propose a pulsed LD drive method producing the drive current with high peak and narrow pulse width. We analyze the key issues and related theories of the drive current generation based on this method and design an LD driver. A model of drive current generation is established and the influence of operating frequency on drive current is discussed. The LD driver is simulated by software and verified by experiments. The working frequency of the driver changes from 20 kHz to 100 kHz and the charging voltage is set at 130 V. The current produced by this driver has a duration of 8.8 ns and a peak of about 35 A, and the peak output optical power of the LD exceeds 75 W.展开更多
Abstract---The stability of the drive current is very important for a laser driver, while it is difficult to maintain the current stable at a high value for the laser driver. On the other hand, the range of the drive ...Abstract---The stability of the drive current is very important for a laser driver, while it is difficult to maintain the current stable at a high value for the laser driver. On the other hand, the range of the drive current is expected to be as wide as possible to be applied to different kinds of lasers. In this paper, a high current laser driver for the superluminescent light emitting diode （SLED） is presented, which is used in the optic fiber gyro embedded by a 0.35 μm bipolar complementary metal-oxide-semiconductor transistor （BiCMOS） process. The laser driver provides automatic power control and certain value of current determined by the external resister. The system is based on the optic-electric feedback theory and uses the closed-loop control technique to maintain the drive current stable. The system is capable of producing stable current ranges from 4 mA to 200 mA when the value of external resister changes.展开更多
An integrated laser diode driver(LDD) driving an edge-emitting laser diode was designed and fabricated by 0.35 μm BiCMOS technology. This paper proposes a scheme which combines the automatic power control loop and te...An integrated laser diode driver(LDD) driving an edge-emitting laser diode was designed and fabricated by 0.35 μm BiCMOS technology. This paper proposes a scheme which combines the automatic power control loop and temperature com-pensation for modulation current in order to maintain constant extinction ratio and average optical power. To implement tem-perature compensation for modulation current,a novel circuit which generates a PTAT current by using the injecting base current of a bipolar transistor in saturation region,and alternates the amplifier feedback loop(closed or not) to control the state of the current path is presented. Simulation results showed that programmed by choice of external resistors,the IC can provide modu-lation current from 5 mA to 85 mA with temperature compensation adjustments and independent bias current from 4 mA to 100 mA. Optical test results showed that clear eye-diagrams can be obtained at 155 Mbps,with the output optical power being nearly constant,and the variation of extinction ratio being lower than 0.7 dB.展开更多
The Shen-Guang II Upgrade(SG-Ⅱ-U) laser facility consists of eight high-power nanosecond laser beams and one shortpulse picosecond petawatt laser. It is designed for the study of inertial confinement fusion(ICF), esp...The Shen-Guang II Upgrade(SG-Ⅱ-U) laser facility consists of eight high-power nanosecond laser beams and one shortpulse picosecond petawatt laser. It is designed for the study of inertial confinement fusion(ICF), especially for conducting fast ignition(FI) research in China and other basic science experiments. To perform FI successfully with hohlraum targets containing a golden cone, the long-pulse beam and cylindrical hohlraum as well as the short-pulse beam and cone target alignment must satisfy tight specifications(30 and 20 μm rms for each case). To explore new ICF ignition targets with six laser entrance holes(LEHs), a rotation sensor was adapted to meet the requirements of a three-dimensional target and correct beam alignment. In this paper, the strategy for aligning the nanosecond beam based on target alignment sensor(TAS) is introduced and improved to meet requirements of the picosecond lasers and the new six LEHs hohlraum targets in the SG-II-U facility. The expected performance of the alignment system is presented, and the alignment error is also discussed.展开更多
SG-Ⅲ laser facility is now the largest laser driver for inertial confinement fusion research in China. The whole laser facility can deliver 180 kJ energy and 60 TW power ultraviolet laser onto target, with power bala...SG-Ⅲ laser facility is now the largest laser driver for inertial confinement fusion research in China. The whole laser facility can deliver 180 kJ energy and 60 TW power ultraviolet laser onto target, with power balance better than 10%.We review the laser system and introduce the SG-Ⅲ laser performance here.展开更多
We report on the design and performance of a fiber laser system with adaptive acousto-optic macropulse control for a novel photocathode laser driver with 3D ellipsoidal pulse shaping. The laser system incorporates a t...We report on the design and performance of a fiber laser system with adaptive acousto-optic macropulse control for a novel photocathode laser driver with 3D ellipsoidal pulse shaping. The laser system incorporates a threestage fiber amplifier with an integrated acousto-optical modulator. A digital electronic control system with feedback combines the functions of the arbitrary micropulse selection and modulation resulting in macropulse envelope profiling. As a benefit, a narrow temporal transparency window of the modulator, comparable to a laser pulse repetition period, effectively improves temporal contrast. In experiments, we demonstrated rectangular laser pulse train profiling at the output of a three-cascade Yb-doped fiber amplifier.展开更多
A design of 13 Gbit/s vertical cavity surface emitting laser （VCSEL） driver using 0.18 μm complementary metal oxide semiconductor （CMOS） technology is presented in this paper. The core unit of the driver consists...A design of 13 Gbit/s vertical cavity surface emitting laser （VCSEL） driver using 0.18 μm complementary metal oxide semiconductor （CMOS） technology is presented in this paper. The core unit of the driver consists of pre-amplify stage and output stage circuit. Techniques of three stages differential amplifier with low impedance load and active feedback are employed in pre-amplify stage, and technique of C3A is adopted in output stage to acquire low power consumption and high speed. The experimental results show that the circuit can work at the data rate of 10 Gbit/s and maximum of 13.2 Gbit/s. The output modulation current is up to 12.5 mA and the power dissipation is only 68 mW with a 1.8 V power supply.展开更多
文摘Using native CMOS technology,EDA tool,and adopting full-custom design methodology,a laser diode driver for the use of STM-1 and STM-4 optical access network,is realized by CSMC-HJ 0.6μm CMOS technology to modulate laser diodes at 155Mb/s (STM-1),622Mb/s (STM-4) with adjustable modulation current from 0 to 50mA for an equivalent 50Ω load.The maximum modulation voltage is over 2.5V pp corresponding to a 3V DC bias for output stage.The time range of rise and fall from 360ps to 471ps is measured from the output voltage pulse.The RMS jitter is no more than 30ps for four bit rates.The power consumption is less than 410mW under a power supply voltage of 5V.According to the experimental results,the laser diode driver achieves the same level as their counterparts worldwide.
文摘A DC-10Mb/s laser diode driver,compatible with TTL and CMOS levels,is presented. The optical power corresponding to‘1＇ and ‘0＇ can be set independently with resistors off-chip and stabilized with a closed loop. A novel peak-to- peak optical power monitor and stabilization mechanism is introduced. The circuit, fabricated in a CSMC 0. 5μm mixed signal CMOS process, can provide 120mA maximum drive current and 0. 6dB extinction ration fluctuation over - 20 ＋ 80℃ ,which is independent of input pattern.
基金This work is supported by the SG-Ⅲ performance upgrade project.
文摘The SG-Ⅲlaser facility(SG-Ⅲ)is the largest laser driver for inertial confinement fusion(ICF)researches in China,which has 48 beamlines and can deliver 180 kJ ultraviolet laser energy in 3 ns.In order to meet the requirements of precise physics experiments,some new functionalities need to be added to SG-Ⅲand some intrinsic laser performances need upgrade.So at the end of SG-Ⅲ's engineering construction,the 2-year laser performance upgrade project started.This paper will introduce the newly added functionalities and the latest laser performance of SG-Ⅲ.With these function extensions and performance upgrade,SG-Ⅲis now fully prepared for precise ICF experiments and solidly paves the way towards fusion ignition.
基金The National High Technology Research and Development Program of China(863 Program)(No.2006AA01Z284)
文摘This paper discusses the design of a 10 Gb/s laser diode driver implemented in SiGe BiCMOS technology. The laser diode driver is composed of an input buffer, a predriver circuit and an output current switch stage. With the current mode logic （CML） structure, the input buffer and the predriver circuit have the capability of transmission and amplification of high speed data. By employing MOS-HBT cascode structure as the output stage, the laser diode driver exhibits very high speed and efficiency working at the 10 Gb/s data rate. The core circuit is operated under a 3. 3 V supply, while the output stage is operated under 5.5 V for sufficient headroom across the laser diode. The chip occupies a die area of 600 μm × 800μm. Measurements on chip show clear electrical eye diagrams over 10 Gb/s, which can well meet the specifications defined by SDH STM64/SONET OC192 and a 10 Gb/s Ethemet eye mask. Under a 5. 5 V supply voltage, the maximum output swing is 3.0 V with a 50 12 load （the corresponding modulation current is 60 mA）, and the total power dissipation is 660 mW.
文摘This paper presents the design and testing of a 15 Gbps non-return-to-zero(NRZ),30 Gbps 4-level pulse amplitude modulation(PAM4)configurable laser diode driver(LDD)implemented in 0.15-μm GaAs E-mode pHEMT technology.The driver bandwidth is enhanced by utilizing cross-coupled neutralization capacitors across the output stage.The output transmission-line back-termination,which absorbs signal reflections from the imperfectly matched load,is performed passively with on-chip 50-Ωresistors.The proposed 30 Gbps PAM4 LDD is implemented by combining two 15 Gbps-NRZ LDDs,as the high and low amplification paths,to generate PAM4 output current signal with levels of 0,40,80,and 120 mA when driving 25-Ωlasers.The high and low amplification paths can be used separately or simultaneously as a 15 Gbps-NRZ LDD.The measurement results show clear output eye diagrams at speeds of up to 15 and 30 Gbps for the NRZ and PAM4 drivers,respectively.At a maximum output current of 120 mA,the driver consumes 1.228 W from a single supply voltage of-5.2 V.The proposed driver shows a high current driving capability with a better output power to power dissipation ratio,which makes it suitable for driving high current distributed feedback(DFB)lasers.The chip occupies a total area of 0.7×1.3 mm^(2).
基金National Key Research and Development Plan(No.2017YFF0204800)Natural Science Foundation of Tianjin(No.17JCQNJC01100)+3 种基金National Natural Science Foundation of China(Nos.61501319,51775377,61505140)Young Elite Scientists Sponsorship Program by Cast of China(No.2016QNRC001)Open Project of Key Laboratory of Micro Opto-electro Mechanical System Technology(No.MOMST2015-7)Open Project from Photoelectric Information and Instrument-Engineering Research Center of Beijing,Tianjin University,Ministry of Education(No.GD2015007)
文摘Light detection and ranging (LIDAR) based on time of flight (TOF) method is widely used in many fields related to distance measurement. LIDAR generally uses laser diode (LD) to emit the pulsed laser with high peak power and short duration to ensure a large distance measurement range and eye safety. To achieve this goal, we propose a pulsed LD drive method producing the drive current with high peak and narrow pulse width. We analyze the key issues and related theories of the drive current generation based on this method and design an LD driver. A model of drive current generation is established and the influence of operating frequency on drive current is discussed. The LD driver is simulated by software and verified by experiments. The working frequency of the driver changes from 20 kHz to 100 kHz and the charging voltage is set at 130 V. The current produced by this driver has a duration of 8.8 ns and a peak of about 35 A, and the peak output optical power of the LD exceeds 75 W.
文摘Abstract---The stability of the drive current is very important for a laser driver, while it is difficult to maintain the current stable at a high value for the laser driver. On the other hand, the range of the drive current is expected to be as wide as possible to be applied to different kinds of lasers. In this paper, a high current laser driver for the superluminescent light emitting diode （SLED） is presented, which is used in the optic fiber gyro embedded by a 0.35 μm bipolar complementary metal-oxide-semiconductor transistor （BiCMOS） process. The laser driver provides automatic power control and certain value of current determined by the external resister. The system is based on the optic-electric feedback theory and uses the closed-loop control technique to maintain the drive current stable. The system is capable of producing stable current ranges from 4 mA to 200 mA when the value of external resister changes.
基金Project (No. 2006AA01Z226) supported by the Hi-Tech Researchand Development Program (863) of China
文摘An integrated laser diode driver(LDD) driving an edge-emitting laser diode was designed and fabricated by 0.35 μm BiCMOS technology. This paper proposes a scheme which combines the automatic power control loop and temperature com-pensation for modulation current in order to maintain constant extinction ratio and average optical power. To implement tem-perature compensation for modulation current,a novel circuit which generates a PTAT current by using the injecting base current of a bipolar transistor in saturation region,and alternates the amplifier feedback loop(closed or not) to control the state of the current path is presented. Simulation results showed that programmed by choice of external resistors,the IC can provide modu-lation current from 5 mA to 85 mA with temperature compensation adjustments and independent bias current from 4 mA to 100 mA. Optical test results showed that clear eye-diagrams can be obtained at 155 Mbps,with the output optical power being nearly constant,and the variation of extinction ratio being lower than 0.7 dB.
文摘The Shen-Guang II Upgrade(SG-Ⅱ-U) laser facility consists of eight high-power nanosecond laser beams and one shortpulse picosecond petawatt laser. It is designed for the study of inertial confinement fusion(ICF), especially for conducting fast ignition(FI) research in China and other basic science experiments. To perform FI successfully with hohlraum targets containing a golden cone, the long-pulse beam and cylindrical hohlraum as well as the short-pulse beam and cone target alignment must satisfy tight specifications(30 and 20 μm rms for each case). To explore new ICF ignition targets with six laser entrance holes(LEHs), a rotation sensor was adapted to meet the requirements of a three-dimensional target and correct beam alignment. In this paper, the strategy for aligning the nanosecond beam based on target alignment sensor(TAS) is introduced and improved to meet requirements of the picosecond lasers and the new six LEHs hohlraum targets in the SG-II-U facility. The expected performance of the alignment system is presented, and the alignment error is also discussed.
文摘SG-Ⅲ laser facility is now the largest laser driver for inertial confinement fusion research in China. The whole laser facility can deliver 180 kJ energy and 60 TW power ultraviolet laser onto target, with power balance better than 10%.We review the laser system and introduce the SG-Ⅲ laser performance here.
基金Russian Foundation for Basic Research(RFBR)(15-07-03719)Russian Science Foundation(RSF)(16-19-10448)Ministry of Education and Science of the Russian Federation(Minobrnauka)(14.Z50.31.0007,K2-2015-077)
文摘We report on the design and performance of a fiber laser system with adaptive acousto-optic macropulse control for a novel photocathode laser driver with 3D ellipsoidal pulse shaping. The laser system incorporates a threestage fiber amplifier with an integrated acousto-optical modulator. A digital electronic control system with feedback combines the functions of the arbitrary micropulse selection and modulation resulting in macropulse envelope profiling. As a benefit, a narrow temporal transparency window of the modulator, comparable to a laser pulse repetition period, effectively improves temporal contrast. In experiments, we demonstrated rectangular laser pulse train profiling at the output of a three-cascade Yb-doped fiber amplifier.
基金supported by the Hi-Tech Research and Development Program of China(2011AA010301)the National Natural Science Foundation of China(60976029)
文摘A design of 13 Gbit/s vertical cavity surface emitting laser （VCSEL） driver using 0.18 μm complementary metal oxide semiconductor （CMOS） technology is presented in this paper. The core unit of the driver consists of pre-amplify stage and output stage circuit. Techniques of three stages differential amplifier with low impedance load and active feedback are employed in pre-amplify stage, and technique of C3A is adopted in output stage to acquire low power consumption and high speed. The experimental results show that the circuit can work at the data rate of 10 Gbit/s and maximum of 13.2 Gbit/s. The output modulation current is up to 12.5 mA and the power dissipation is only 68 mW with a 1.8 V power supply.
