This was an outlook on the prediction of the infrared laser potentiality from concentration dependences of the 2F5/2 experimental decay time in Yb3＋-doped solid-state crystals mainly on cubic crystals with 99.99% pur...This was an outlook on the prediction of the infrared laser potentiality from concentration dependences of the 2F5/2 experimental decay time in Yb3＋-doped solid-state crystals mainly on cubic crystals with 99.99% purity which could be extended to laser ceramics of the same composition.展开更多
By using the re-derived formulae for both line-strength of electricdipole transition and simple J-mixing coefficients within the 4f shell in a rare-earthion, the spectroscopic properties of the luminescent material Eu...By using the re-derived formulae for both line-strength of electricdipole transition and simple J-mixing coefficients within the 4f shell in a rare-earthion, the spectroscopic properties of the luminescent material Eu3+ =Y2O3 and laser crystals Tb3+:=YAlO3 and Nd3+:YVO4, are investigated in detail. On the basis of three fitting Ω parameters and the effective reduced matrix elements, the spectral linestrengths, spontaneous emission probabilities, fluorescent branching ratios and lifetimeare calculated. The better agreement between theoretical results and experimental dataindicates the importance of J-mixing in the spectroscopic study of laser crystals.展开更多
Eye-safe 1.5～1.6 μm lasers have important applications in optical fiber communication, medicine, laser-range-finding, lidar, etc. Er^3＋ and Yb^3＋ co-doped crystal pumped by diode laser around 976 nm is an attracti...Eye-safe 1.5～1.6 μm lasers have important applications in optical fiber communication, medicine, laser-range-finding, lidar, etc. Er^3＋ and Yb^3＋ co-doped crystal pumped by diode laser around 976 nm is an attractive method for obtaining 1.5～1.6 μm laser in compact device with high output beam quality. In this paper, the recent research and progress of several important Er^3＋ and Yb^3＋ co-doped laser crystals at 1.5～1.6 μm in authors’ lab are reported.展开更多
Semiconductor and laser single crystals are usually brittle and hard,which need to be ground to have satisfactory surface integrity and dimensional precision prior to their applications.Improvement of the surface inte...Semiconductor and laser single crystals are usually brittle and hard,which need to be ground to have satisfactory surface integrity and dimensional precision prior to their applications.Improvement of the surface integrity of a ground crystal can shorten the time of a subsequent polishing process,thus reducing the manufacturing cost.The development of cost-effective grinding technologies for those crystals requires an in-depth understanding of their deformation and removal mechanisms.As a result,a great deal of research efforts were directed towards studying this topic in the past two or three decades.In this review,we aimed to summarize the deformation and removal characteristics of representative semiconductor and laser single crystals in accordance with the scale of mechanical loading,especially at extremely small scales.Their removal mechanisms were critically examined based on the evidence obtained from highresolution TEM analyses.The relationships between machining conditions and removal behaviors were discussed to provide a guidance for further advancing of the grinding technologies for those crystals.展开更多
LNA is a new laser crystal discovered several years ago.The investigations have confirmed interest in LNA as a new,high-power,high-efficiency,solid-state neodymium laser.One of the advantages of LNA is the ability to ...LNA is a new laser crystal discovered several years ago.The investigations have confirmed interest in LNA as a new,high-power,high-efficiency,solid-state neodymium laser.One of the advantages of LNA is the ability to achieve a high Nd content,six times as high as that in YAG(2×10^(20)ions cm^(-3))without severe concentration quenching of the fluorescence and strong segregation of the dopingion along the laser rod.展开更多
Photonic crystal surface emitting lasers(PCSELs)utilize the Bragg diffraction of two-dimensional photonic crystals to achieve a single-mode output with a high power and a small divergence angle,and has recently attrac...Photonic crystal surface emitting lasers(PCSELs)utilize the Bragg diffraction of two-dimensional photonic crystals to achieve a single-mode output with a high power and a small divergence angle,and has recently attracted much attention^([1−3]).In 2023,Kyoto University reported GaAs-based 945 nm PCSELs with a continuous-wave(CW)single-mode output power of exceeding 50 W,and a narrow beam divergence angle of 0.05°,demonstrating a brightness of 1 GW·cm^(−2)·sr^(−1),which rivals those of the existing bulky lasers^([4]).展开更多
Functional crystals are the basic materials for the development of modern science and technology and are playing key roles in the modern information era. In this paper, we review functional crystals in China, includin...Functional crystals are the basic materials for the development of modern science and technology and are playing key roles in the modern information era. In this paper, we review functional crystals in China, including research history, significant achievements, and important applications by highlighting the most recent progress in research. Challenges for the development of functional materials are discussed and possible directions for development are proposed by focusing on potential strengths of these materials.展开更多
The laset of Er^(3+)ion has had people’s attention because of its excellent properties and application.So we grew out crystal of ZnWO_(4):Er and measured its absorption,excitation and emission spectra.We can see from...The laset of Er^(3+)ion has had people’s attention because of its excellent properties and application.So we grew out crystal of ZnWO_(4):Er and measured its absorption,excitation and emission spectra.We can see from the absorption spectrum that the absorption of Erion in ZnWO_(4)crystal centers on two bands with peaks at 379nm and 522nm wavelength resPectively,for which the excitation light energy can be absorbed effectively.展开更多
Based on a theoretical model of Q-switched laser with the influences of the driving signal sent to the Pockels cell and the doping concentration of the gain medium taken into account,a method of achieving high energy ...Based on a theoretical model of Q-switched laser with the influences of the driving signal sent to the Pockels cell and the doping concentration of the gain medium taken into account,a method of achieving high energy sub-nanosecond Q-switched lasers is proposed and verified in experiment.When a Nd:YVO4 crystal with a doping concentration of 0.7 at.%is used as a gain medium and a driving signal with the optimal high-level voltage is applied to the Pockels cell,a stable single-transverse-mode electro-optical Q-switched laser with a pulse width of 0.77 ns and a pulse energy of 1.04 mJ operating at the pulse repetition frequency of 1 kHz is achieved.The precise tuning of the pulse width is also demonstrated.展开更多
The LiYF4 single crystal codoped with thulium and holmium ions was successfully grown by the Cz method. The optimal technical parameters obtained were as follows： the pulling rate was 0.16 mm/h; the rotation speed wa...The LiYF4 single crystal codoped with thulium and holmium ions was successfully grown by the Cz method. The optimal technical parameters obtained were as follows： the pulling rate was 0.16 mm/h; the rotation speed was 3 rpm; the cooling rate was 15 °C/h. The result of XRD curve showed that as-grown Tm,Ho：LiYF4 laser crystal belonged to the monoclinic system with scheelite-type structure and space group I41/a. The cell parameters calculated were： a=0.52160 nm, c=1.09841 nm and Z=4. Absorption and fluorescence spectra of Tm,Ho：LiYF4 laser crystal at room temperature were measured and analysed. The absorption cross section, FWHM and absorption coefficient at 779.3 nm calculated were 7.44×10–21 cm2, 8.7 nm and 2.23 cm–1, respectively. An intensive fluorescence emission peak appeared near 2045 nm. The emission cross section and fluorescence lifetime were 0.87×10–20 cm2 and 10.8 ms, respectively. The ratio of Tm–Ho transfer to its back-transfer process was 10.6.展开更多
A theory for shifts of energy spectra due to electron-phonon interaction (EPI) has been developed. Both the temperature-independent contributions and the temperature-dependent ones of acoustic branches and optical bra...A theory for shifts of energy spectra due to electron-phonon interaction (EPI) has been developed. Both the temperature-independent contributions and the temperature-dependent ones of acoustic branches and optical branches have been derived. It is found that the temperature-independent contributions are very important, especially at low temperature. The total pressure-induced shift (PS) of a level (or spectral line or band) is the algebraic sum of its PS without EPI and its PS due to EPI. By means of both the theory for shifts of energy spectra due to EPI and the theory for PS of energy spectra, the total PS of R<SUB>1</SUB> line of tunable laser crystal GSGG:Cr<SUP>3+</SUP> at 70 K as well as the ones of its R<SUB>1</SUB> line, R<SUB>2</SUB> line and U band at 300 K will be successfully calculated and explained in this series of papers.展开更多
Polycrystalline silicon （poly-Si） thin film has been prepared by means of nickel-disilicide （NiSi2） assisted excimer laser crystallization （ELC）. The process to prepare a sample includes two steps. One step cons...Polycrystalline silicon （poly-Si） thin film has been prepared by means of nickel-disilicide （NiSi2） assisted excimer laser crystallization （ELC）. The process to prepare a sample includes two steps. One step consists of the formation of NiSi2 precipitates by heat-treating the dehydrogenated amorphous silicon （a-Si） coated with a thin layer of Ni. And the other step consists of the formation of poly-Si grains by means of ELC. According to the test results of scanning electron microscopy （SEM）, another grain growth model named two-interface grain growth has been proposed to contrast with the conventional Ni-metal-induced lateral crystallization （Ni-MILC） model and the ELC model. That is, an additional grain growth interface other than that in conventional ELC is formed, which consists of NiSi2 precipitates and a-Si. The processes for grain growth according to various excimer laser energy densities delivered to the a-Si film have been discussed. It is discovered that grains with needle shape and most of a uniform orientation are formed which grow up with NiSi2 precipitates as seeds. The reason for the formation of such grains which are different from that of Ni-MILC without migration of Ni atoms is not clear. Our model and analysis point out a method to prepare grains with needle shape and mostly of a uniform orientation. If such grains are utilized to make thin-film transistor, its characteristics may be improved.展开更多
Single crystal of Yb x Y 1- x Al 3(BO 3) 4 (Yb∶YAB) was grown by using flux method based on the potassium trimolybdate. 160 mW efficient continuous wave green output was obtained from a fibre coupled ...Single crystal of Yb x Y 1- x Al 3(BO 3) 4 (Yb∶YAB) was grown by using flux method based on the potassium trimolybdate. 160 mW efficient continuous wave green output was obtained from a fibre coupled 976 nm laser diode. The conversion efficiency is larger than 11 3%, and the electrical input green conversion efficiency is 3 9%. Tunable green output from 513 0 to 545 8 nm is also demonstrated with a quartz birefringent filter. By enhancing the incident pump power, 1 1 W cw green output can be reached.展开更多
We report the repetitively Q-switched laser operation of the Yb-doped calcium niobium gallium garnet disordered garnet crystal, achieved with an acousto-optic modulator in a compact plano-concave resonator that is end...We report the repetitively Q-switched laser operation of the Yb-doped calcium niobium gallium garnet disordered garnet crystal, achieved with an acousto-optic modulator in a compact plano-concave resonator that is endpumped by a 935-nm diode laser. An average output power of 1.96 W is produced at pulse repetition rate of50 k Hz at emission wavelengths around 1035 nm, with a slope efficiency of 16%. The highest pulse energy of 269 μJ is generated at pulse repetition rate of 1 k Hz, with pulse width 12.1 ns and peak power 20.53 kW.展开更多
We present a laser-diode-pumped passively mode-locked femtosecond disordered crystal laser by using Nd：CaGdAI04 （Nd：CGA） as the gain medium. With a pair of SF6 prisms to control the dispersion compensation, laser ...We present a laser-diode-pumped passively mode-locked femtosecond disordered crystal laser by using Nd：CaGdAI04 （Nd：CGA） as the gain medium. With a pair of SF6 prisms to control the dispersion compensation, laser pulses as short as 850fs at 1079nm are obtained with a repetition rate of 124.6 MHz. The measured threshold pump power is 1.45 W. A maximum average output power of 122mW is obtained under the pump power of 5.9 W. These results show that Nd：CGA could be a promising laser medium for generating femtosecond ultrashort pulse at about 1 μm.展开更多
This article summarizes work at the Laser Thermal Laboratory and discusses related studies on the laser synthesis and functionalization of semiconductor nanostructures and two-dimensional(2D)semiconductor materials.Re...This article summarizes work at the Laser Thermal Laboratory and discusses related studies on the laser synthesis and functionalization of semiconductor nanostructures and two-dimensional(2D)semiconductor materials.Research has been carried out on the laser-induced crystallization of thin films and nanostructures.The in situ transmission electron microscopy(TEM)monitoring of the crystallization of amorphous precursors in nanodomains is discussed herein.The directed assembly of silicon nanoparticles and the modulation of their optical properties by phase switching is presented.The vapor-liquid-solid mechanism has been adopted as a bottom-up approach in the synthesis of semiconducting nanowires(NWs).In contrast to furnace heating methods,laser irradiation offers high spatial selectivity and precise control of the heating mechanism in the time domain.These attributes enabled the investigation of NW nucleation and the early stage of nanostructure growth.Site-and shape-selective,on-demand direct integration of oriented NWs was accomplished.Growth of discrete silicon NWs with nanoscale location selectivity by employing near-field laser illumination is also reported herein.Tuning the properties of 2D transition metal dichalcogenides(TMDCs)by modulating the free carrier type,density,and composition can offer an exciting new pathway to various practical nanoscale electronics.In situ Raman probing of laser-induced processing of TMDC flakes was conducted in a TEM instrument.展开更多
A geometric analysis technique for crystal growth and microstructure development in single-crystal welds had been previously developed.And the effect of welding conditions on the tendency of stray grains formation dur...A geometric analysis technique for crystal growth and microstructure development in single-crystal welds had been previously developed.And the effect of welding conditions on the tendency of stray grains formation during solidification was researched.In the present work,these analytical methods were further extended.Combined with an original vectorization method,a 3D Rosenthal solution was used to determine thermal conditions of the welds.Afterward,the dendrite growth orientation,the dendrite growth velocity and the thermal gradient along dendrite direction were calculated and lively plotted.Finally,the tendency of stray grains formation in the solidification front was forecasted and its distribution was presented with a 3D plot.The results indicate that substrate orientation has some impacts on the crystal growth pattern,dendrite growth velocity,distribution of thermal gradient and stray grain.Based on the research methods proposed in this work,any substrate crystallographic orientation can be studied,and predicted stray grains distribution can be visualized.展开更多
A vectorization analysis technique for crystal growth and microstructure development in single-crystal weld was developed in our previous work. Based on the vectorization method, crystal growth and stray grain distrib...A vectorization analysis technique for crystal growth and microstructure development in single-crystal weld was developed in our previous work. Based on the vectorization method, crystal growth and stray grain distribution in laser surface remelting of single crystal superalloy CMSX-4 were investigated in com- bination of simulations with experimental observations. The energy distribution of laser was taken into consideration in this research. The experimental results demonstrate that the simulation model applies well in the prediction of dendrite growth direction. Moreover, the prediction of stray grain distribution works well except for the region of dendrites growing along the [100] direction.展开更多
For the desirable laser optical property, transition metals or rare-earths are always doped into parent glasses as active ions, and this doping will affect the crystallization of the precursor glasses inevitably. In t...For the desirable laser optical property, transition metals or rare-earths are always doped into parent glasses as active ions, and this doping will affect the crystallization of the precursor glasses inevitably. In this work, crystallization behavior of NaO-CaO-SiO2 system glasses doped with Nd2O3 was investigated. The crystallization kinetic parameters including the crystallization apparent activation energy （E） and the Avrami parameter （n） were also measured. The results show that the NaO-CaO-SiO2 system glassceramics with the NaxCa2Si3O9 crystal as primary phase can be highly crystalized as above 90%. The Nd2O3 doping has a significant influence on the crystallization apparent activation energy and the Avrami parameter, which affect the crystallization behavior and morphology of the transparent glass-ceramics of this system.展开更多
Direct growth and patterning of atomically thin two-dimensional(2D)materials on various substrates are essential steps towards enabling their potential for use in the next generation of electronic and optoelectronic d...Direct growth and patterning of atomically thin two-dimensional(2D)materials on various substrates are essential steps towards enabling their potential for use in the next generation of electronic and optoelectronic devices.The conventional gas-phase growth techniques,however,are not compatible with direct patterning processes.Similarly,the condensed-phase methods,based on metal oxide deposition and chalcogenization processes,require lengthy processing times and high temperatures.Here,a novel self-limiting laser crystallization process for direct crystallization and patterning of 2D materials is demonstrated.It takes advantage of significant differences between the optical properties of the amorphous and crystalline phases.Pulsed laser deposition is used to deposit a thin layer of stoichiometric amorphous molybdenum disulfide(MoS2)film(∼3 nm)onto the fused silica substrates.A tunable nanosecond infrared(IR)laser(1064 nm)is then employed to couple a precise amount of power and number of pulses into the amorphous materials for controlled crystallization and direct writing processes.The IR laser interaction with the amorphous layer results in fast heating,crystallization,and/or evaporation of the materials within a narrow processing window.However,reduction of the midgap and defect states in the as crystallized layers decreases the laser coupling efficiency leading to higher tolerance to process parameters.The deliberate design of such laser 2D material interactions allows the selflimiting crystallization phenomena to occur with increased quality and a much broader processing window.This unique laser processing approach allows high-quality crystallization,direct writing,patterning,and the integration of various 2D materials into future functional devices.展开更多
文摘This was an outlook on the prediction of the infrared laser potentiality from concentration dependences of the 2F5/2 experimental decay time in Yb3＋-doped solid-state crystals mainly on cubic crystals with 99.99% purity which could be extended to laser ceramics of the same composition.
文摘By using the re-derived formulae for both line-strength of electricdipole transition and simple J-mixing coefficients within the 4f shell in a rare-earthion, the spectroscopic properties of the luminescent material Eu3+ =Y2O3 and laser crystals Tb3+:=YAlO3 and Nd3+:YVO4, are investigated in detail. On the basis of three fitting Ω parameters and the effective reduced matrix elements, the spectral linestrengths, spontaneous emission probabilities, fluorescent branching ratios and lifetimeare calculated. The better agreement between theoretical results and experimental dataindicates the importance of J-mixing in the spectroscopic study of laser crystals.
基金Supported by the National Natural Science Foundation of China (No. 50590405 and 50802094)the Major Programs of the Chinese Academy of Sciences (No. SZD08001-1)+1 种基金the Natural Science Foundation of Fujian Province (No. 2008J0173)the Knowledge Innovation Program of the Chinese Academy of Sciences
文摘Eye-safe 1.5～1.6 μm lasers have important applications in optical fiber communication, medicine, laser-range-finding, lidar, etc. Er^3＋ and Yb^3＋ co-doped crystal pumped by diode laser around 976 nm is an attractive method for obtaining 1.5～1.6 μm laser in compact device with high output beam quality. In this paper, the recent research and progress of several important Er^3＋ and Yb^3＋ co-doped laser crystals at 1.5～1.6 μm in authors’ lab are reported.
基金The authors would like to acknowledge the financial supports from Australia Research Council(ARC)under Discovery Projects program(DP180103275)It is also supported by the Scientific Research Funds of Huaqiao University(605-50Y19022)Certain images in this publication have been obtained by the author(s)from the Wikipedia/Wikimedia website,where they were made available under a Creative Commons licence or stated to be in the public domain.Please see individual captions in this publications for details.To the extent that the law allows,IOP Publishing disclaim any liability that any person may suffer as a result of accessing,using or forwarding the image(s).Any reuse rights should be checked and permission should be sought if necessary from the Wikipedia/Wikimedia and/or the copyright owner(as appropriate)before using or forwarding the image(s).
文摘Semiconductor and laser single crystals are usually brittle and hard,which need to be ground to have satisfactory surface integrity and dimensional precision prior to their applications.Improvement of the surface integrity of a ground crystal can shorten the time of a subsequent polishing process,thus reducing the manufacturing cost.The development of cost-effective grinding technologies for those crystals requires an in-depth understanding of their deformation and removal mechanisms.As a result,a great deal of research efforts were directed towards studying this topic in the past two or three decades.In this review,we aimed to summarize the deformation and removal characteristics of representative semiconductor and laser single crystals in accordance with the scale of mechanical loading,especially at extremely small scales.Their removal mechanisms were critically examined based on the evidence obtained from highresolution TEM analyses.The relationships between machining conditions and removal behaviors were discussed to provide a guidance for further advancing of the grinding technologies for those crystals.
文摘LNA is a new laser crystal discovered several years ago.The investigations have confirmed interest in LNA as a new,high-power,high-efficiency,solid-state neodymium laser.One of the advantages of LNA is the ability to achieve a high Nd content,six times as high as that in YAG(2×10^(20)ions cm^(-3))without severe concentration quenching of the fluorescence and strong segregation of the dopingion along the laser rod.
基金funded by National Key R&D Program of China(Grant Nos.2024YFB3612200,2023YFB3609601,2022YFB3604300,2022YFB2802801,2022YFB3604802)Natural Science Foundation of China(Grant Nos.U24A20300,62174174,62274177,62275263,62325406,62374172,62304242,62304240,62404241)+4 种基金Youth Innovation Promotion Association of CAS(Grant Nos.2022323 and 2022324)Key R&D Program of Jiangsu Province(Grant No.BE2023018-2)Basic Research Program of Jiangsu(Grant No.BK20240126)Suzhou Science and Technology Program(Grant Nos.SYC2022089,ZXL2024379,and ZXL2024376)Guangdong Basic and Applied Basic Research Foundation(Grant Nos.2022A1515110482 and 2022A1515110004).
文摘Photonic crystal surface emitting lasers(PCSELs)utilize the Bragg diffraction of two-dimensional photonic crystals to achieve a single-mode output with a high power and a small divergence angle,and has recently attracted much attention^([1−3]).In 2023,Kyoto University reported GaAs-based 945 nm PCSELs with a continuous-wave(CW)single-mode output power of exceeding 50 W,and a narrow beam divergence angle of 0.05°,demonstrating a brightness of 1 GW·cm^(−2)·sr^(−1),which rivals those of the existing bulky lasers^([4]).
文摘Functional crystals are the basic materials for the development of modern science and technology and are playing key roles in the modern information era. In this paper, we review functional crystals in China, including research history, significant achievements, and important applications by highlighting the most recent progress in research. Challenges for the development of functional materials are discussed and possible directions for development are proposed by focusing on potential strengths of these materials.
文摘The laset of Er^(3+)ion has had people’s attention because of its excellent properties and application.So we grew out crystal of ZnWO_(4):Er and measured its absorption,excitation and emission spectra.We can see from the absorption spectrum that the absorption of Erion in ZnWO_(4)crystal centers on two bands with peaks at 379nm and 522nm wavelength resPectively,for which the excitation light energy can be absorbed effectively.
基金the National Key Research and Development Program of China(Grant No.2017YFB0405203)the Shanxi“1331 Project”Key Subjects Construction,China(Grant No.1331KSC).
文摘Based on a theoretical model of Q-switched laser with the influences of the driving signal sent to the Pockels cell and the doping concentration of the gain medium taken into account,a method of achieving high energy sub-nanosecond Q-switched lasers is proposed and verified in experiment.When a Nd:YVO4 crystal with a doping concentration of 0.7 at.%is used as a gain medium and a driving signal with the optimal high-level voltage is applied to the Pockels cell,a stable single-transverse-mode electro-optical Q-switched laser with a pulse width of 0.77 ns and a pulse energy of 1.04 mJ operating at the pulse repetition frequency of 1 kHz is achieved.The precise tuning of the pulse width is also demonstrated.
基金Project supported by Changchun Science and Technology Bureau (2009110)Jilin Provincial Education Department (2009JYT15)Jilin Pro-vincial Science and Technology Department (20100556)
文摘The LiYF4 single crystal codoped with thulium and holmium ions was successfully grown by the Cz method. The optimal technical parameters obtained were as follows： the pulling rate was 0.16 mm/h; the rotation speed was 3 rpm; the cooling rate was 15 °C/h. The result of XRD curve showed that as-grown Tm,Ho：LiYF4 laser crystal belonged to the monoclinic system with scheelite-type structure and space group I41/a. The cell parameters calculated were： a=0.52160 nm, c=1.09841 nm and Z=4. Absorption and fluorescence spectra of Tm,Ho：LiYF4 laser crystal at room temperature were measured and analysed. The absorption cross section, FWHM and absorption coefficient at 779.3 nm calculated were 7.44×10–21 cm2, 8.7 nm and 2.23 cm–1, respectively. An intensive fluorescence emission peak appeared near 2045 nm. The emission cross section and fluorescence lifetime were 0.87×10–20 cm2 and 10.8 ms, respectively. The ratio of Tm–Ho transfer to its back-transfer process was 10.6.
文摘A theory for shifts of energy spectra due to electron-phonon interaction (EPI) has been developed. Both the temperature-independent contributions and the temperature-dependent ones of acoustic branches and optical branches have been derived. It is found that the temperature-independent contributions are very important, especially at low temperature. The total pressure-induced shift (PS) of a level (or spectral line or band) is the algebraic sum of its PS without EPI and its PS due to EPI. By means of both the theory for shifts of energy spectra due to EPI and the theory for PS of energy spectra, the total PS of R<SUB>1</SUB> line of tunable laser crystal GSGG:Cr<SUP>3+</SUP> at 70 K as well as the ones of its R<SUB>1</SUB> line, R<SUB>2</SUB> line and U band at 300 K will be successfully calculated and explained in this series of papers.
基金Project supported by the National High Technology Development Program of China （Grant No 2002AA303250） and by the National Natural Science Foundation of China （Grant No 60576056）.
文摘Polycrystalline silicon （poly-Si） thin film has been prepared by means of nickel-disilicide （NiSi2） assisted excimer laser crystallization （ELC）. The process to prepare a sample includes two steps. One step consists of the formation of NiSi2 precipitates by heat-treating the dehydrogenated amorphous silicon （a-Si） coated with a thin layer of Ni. And the other step consists of the formation of poly-Si grains by means of ELC. According to the test results of scanning electron microscopy （SEM）, another grain growth model named two-interface grain growth has been proposed to contrast with the conventional Ni-metal-induced lateral crystallization （Ni-MILC） model and the ELC model. That is, an additional grain growth interface other than that in conventional ELC is formed, which consists of NiSi2 precipitates and a-Si. The processes for grain growth according to various excimer laser energy densities delivered to the a-Si film have been discussed. It is discovered that grains with needle shape and most of a uniform orientation are formed which grow up with NiSi2 precipitates as seeds. The reason for the formation of such grains which are different from that of Ni-MILC without migration of Ni atoms is not clear. Our model and analysis point out a method to prepare grains with needle shape and mostly of a uniform orientation. If such grains are utilized to make thin-film transistor, its characteristics may be improved.
文摘Single crystal of Yb x Y 1- x Al 3(BO 3) 4 (Yb∶YAB) was grown by using flux method based on the potassium trimolybdate. 160 mW efficient continuous wave green output was obtained from a fibre coupled 976 nm laser diode. The conversion efficiency is larger than 11 3%, and the electrical input green conversion efficiency is 3 9%. Tunable green output from 513 0 to 545 8 nm is also demonstrated with a quartz birefringent filter. By enhancing the incident pump power, 1 1 W cw green output can be reached.
基金Supported by the National Natural Science Foundation of China under Grant Nos 11274188 and 11574170
文摘We report the repetitively Q-switched laser operation of the Yb-doped calcium niobium gallium garnet disordered garnet crystal, achieved with an acousto-optic modulator in a compact plano-concave resonator that is endpumped by a 935-nm diode laser. An average output power of 1.96 W is produced at pulse repetition rate of50 k Hz at emission wavelengths around 1035 nm, with a slope efficiency of 16%. The highest pulse energy of 269 μJ is generated at pulse repetition rate of 1 k Hz, with pulse width 12.1 ns and peak power 20.53 kW.
基金Supported by the National Key Basic Research Program of China under Grant No 2013CB922402the International Joint Research Program,and the National Natural Science Foundation of China under Grant Nos 61210017 and 11434016
文摘We present a laser-diode-pumped passively mode-locked femtosecond disordered crystal laser by using Nd：CaGdAI04 （Nd：CGA） as the gain medium. With a pair of SF6 prisms to control the dispersion compensation, laser pulses as short as 850fs at 1079nm are obtained with a repetition rate of 124.6 MHz. The measured threshold pump power is 1.45 W. A maximum average output power of 122mW is obtained under the pump power of 5.9 W. These results show that Nd：CGA could be a promising laser medium for generating femtosecond ultrashort pulse at about 1 μm.
基金The research was performed at the Laser Thermal Laboratory by Drs David J Hwang,Sang-gil Ryu,Eunpa Kim,Jung Bin In,and the current students,Letian Wang,Yoonsoo Rho and Matthew Eliceiri.Professors Andrew M Minor,Junqiao Wu,Oscar D Dubon,Drs Bin Xiang,Frances I Allen,and Changhyun Ko of UCB Materials Science and Engineering,and Dr Carlo Carraro of UCB Chem.Engineering contributed to the work.The research was supported by DARPA/MTO under TBN grant N66001-08-1-2041,the US Department of Energy SBIR grant(DE-FG02-07ER84813),Samsung GRO,and NSF CMMI-1363392.The in situ experiments were performed at the National Center for Electron Microscopy at the Lawrence Berkeley National Laboratory,which is supported by the Office of Science,Office of Basic Energy Sciences,Scientific User Facilities Division,of the US Department of Energy under Contract No.DE-AC02-05CH11231.The laser-induced nanowire growth and doping was conducted on the LACVD apparatus in the UC Berkeley Marvell Nanofabrication Laboratory.
文摘This article summarizes work at the Laser Thermal Laboratory and discusses related studies on the laser synthesis and functionalization of semiconductor nanostructures and two-dimensional(2D)semiconductor materials.Research has been carried out on the laser-induced crystallization of thin films and nanostructures.The in situ transmission electron microscopy(TEM)monitoring of the crystallization of amorphous precursors in nanodomains is discussed herein.The directed assembly of silicon nanoparticles and the modulation of their optical properties by phase switching is presented.The vapor-liquid-solid mechanism has been adopted as a bottom-up approach in the synthesis of semiconducting nanowires(NWs).In contrast to furnace heating methods,laser irradiation offers high spatial selectivity and precise control of the heating mechanism in the time domain.These attributes enabled the investigation of NW nucleation and the early stage of nanostructure growth.Site-and shape-selective,on-demand direct integration of oriented NWs was accomplished.Growth of discrete silicon NWs with nanoscale location selectivity by employing near-field laser illumination is also reported herein.Tuning the properties of 2D transition metal dichalcogenides(TMDCs)by modulating the free carrier type,density,and composition can offer an exciting new pathway to various practical nanoscale electronics.In situ Raman probing of laser-induced processing of TMDC flakes was conducted in a TEM instrument.
基金financially supported by the National Natural Science Foundation of China(Nos.51401210 and51271186)the National High Technology Research and Development Program of China(No.2014AA041701)
文摘A geometric analysis technique for crystal growth and microstructure development in single-crystal welds had been previously developed.And the effect of welding conditions on the tendency of stray grains formation during solidification was researched.In the present work,these analytical methods were further extended.Combined with an original vectorization method,a 3D Rosenthal solution was used to determine thermal conditions of the welds.Afterward,the dendrite growth orientation,the dendrite growth velocity and the thermal gradient along dendrite direction were calculated and lively plotted.Finally,the tendency of stray grains formation in the solidification front was forecasted and its distribution was presented with a 3D plot.The results indicate that substrate orientation has some impacts on the crystal growth pattern,dendrite growth velocity,distribution of thermal gradient and stray grain.Based on the research methods proposed in this work,any substrate crystallographic orientation can be studied,and predicted stray grains distribution can be visualized.
基金financially supported by the National Natural Science Foundation of China (NSFC) under grant Nos. 51401210 and 51271186the National High Technology Research and Development Program (863 Program) of China under grant No. 2014AA041701
文摘A vectorization analysis technique for crystal growth and microstructure development in single-crystal weld was developed in our previous work. Based on the vectorization method, crystal growth and stray grain distribution in laser surface remelting of single crystal superalloy CMSX-4 were investigated in com- bination of simulations with experimental observations. The energy distribution of laser was taken into consideration in this research. The experimental results demonstrate that the simulation model applies well in the prediction of dendrite growth direction. Moreover, the prediction of stray grain distribution works well except for the region of dendrites growing along the [100] direction.
基金financial support of the project from the National Natural Science Foundation of China(No.51172016)
文摘For the desirable laser optical property, transition metals or rare-earths are always doped into parent glasses as active ions, and this doping will affect the crystallization of the precursor glasses inevitably. In this work, crystallization behavior of NaO-CaO-SiO2 system glasses doped with Nd2O3 was investigated. The crystallization kinetic parameters including the crystallization apparent activation energy （E） and the Avrami parameter （n） were also measured. The results show that the NaO-CaO-SiO2 system glassceramics with the NaxCa2Si3O9 crystal as primary phase can be highly crystalized as above 90%. The Nd2O3 doping has a significant influence on the crystallization apparent activation energy and the Avrami parameter, which affect the crystallization behavior and morphology of the transparent glass-ceramics of this system.
基金This work is supported by the Intermural Grant Program(IGP)at Auburn University.
文摘Direct growth and patterning of atomically thin two-dimensional(2D)materials on various substrates are essential steps towards enabling their potential for use in the next generation of electronic and optoelectronic devices.The conventional gas-phase growth techniques,however,are not compatible with direct patterning processes.Similarly,the condensed-phase methods,based on metal oxide deposition and chalcogenization processes,require lengthy processing times and high temperatures.Here,a novel self-limiting laser crystallization process for direct crystallization and patterning of 2D materials is demonstrated.It takes advantage of significant differences between the optical properties of the amorphous and crystalline phases.Pulsed laser deposition is used to deposit a thin layer of stoichiometric amorphous molybdenum disulfide(MoS2)film(∼3 nm)onto the fused silica substrates.A tunable nanosecond infrared(IR)laser(1064 nm)is then employed to couple a precise amount of power and number of pulses into the amorphous materials for controlled crystallization and direct writing processes.The IR laser interaction with the amorphous layer results in fast heating,crystallization,and/or evaporation of the materials within a narrow processing window.However,reduction of the midgap and defect states in the as crystallized layers decreases the laser coupling efficiency leading to higher tolerance to process parameters.The deliberate design of such laser 2D material interactions allows the selflimiting crystallization phenomena to occur with increased quality and a much broader processing window.This unique laser processing approach allows high-quality crystallization,direct writing,patterning,and the integration of various 2D materials into future functional devices.
