We discuss recent progress in using machine-learning(ML)-enabled inverse design techniques applied to photonic devices and components.Specifically,we highlight the design of optical sources,including fiber and semicon...We discuss recent progress in using machine-learning(ML)-enabled inverse design techniques applied to photonic devices and components.Specifically,we highlight the design of optical sources,including fiber and semiconductor lasers,as well as Raman and semiconductor optical amplifiers.Although inverse design approaches for optical detectors remain relatively underexplored,we examine optical layers,particularly metamaterial absorbers,as promising candidates for high-performance optical detection.In addition,we underscore advancements in inverse designing passive optical components,including beam splitters,gratings,and optical fibers.These optical blocks are fundamental in developing next-generation standalone optical communication systems and optical sensing networks,including integrated sensing and communication technologies.While categorizing various reported deep learning architectures across five paradigms,we offer a paradigm-based perspective that reveals how different ML techniques function within modern inverse design methods and enable fast,data-driven solutions that significantly reduce design time and computational demands compared with traditional optimization methods.展开更多
Artificial sensory systems(ASS)are pivotal to next-generation extended reality technologies,now evolving into flexible platforms for comfortable wear and immersive user experiences,while ensuring high performance and ...Artificial sensory systems(ASS)are pivotal to next-generation extended reality technologies,now evolving into flexible platforms for comfortable wear and immersive user experiences,while ensuring high performance and operational reliability.To address these demands,metal-based nanoparticles(NPs),such as noble metal,oxide,and multi-elemental NPs,have been extensively incorporated into functional materials of sensory and synaptic devices due to their tunable optical,electrical,and chemical properties,enhancing sensory precision,stability,and environmental adaptability.However,traditional NP fabrication methods often involve complex processing,residual contaminants,and scalability issues,limiting their effectiveness in ASS applications.State-of-the-art laser ablation in liquids(LAL)presents a promising alternative,offering scalable production of surfactant-free NPs with customizable physicochemical properties,though their application in electronics remains underexplored.This review delves into the transformative potential of LAL-fabricated NPs in ASS,covering the fundamental mechanisms of LAL,the role of process parameters,the derivative strategies for size modulation,the diversity of metal-based NPs,their applications in sensory and synaptic devices,and the challenges and perspectives for meeting industrial standards.Bridging the gap between LAL and ASS is poised to revolutionize both industrial manufacturing and academic research by offering scalable solutions to overcome intrinsic tradeoffs between flexibility and performance,fostering innovations in human-centric,immersive electronics.展开更多
The laser provides a controllable means of supplying localized energy for solder joint formation and is a valuable tool in electronics manufacture.Diode laser soldering for fine pitch QFP devices were carried out with...The laser provides a controllable means of supplying localized energy for solder joint formation and is a valuable tool in electronics manufacture.Diode laser soldering for fine pitch QFP devices were carried out with Sn-Ag-Cu lead-free solder and Sn-Pb solder respectively,and the mechanical properties of micro-joints of the QFP devices were tested and studied by STR-1000 micro-joints tester.The results indicate that sound QFP micro-joints without bridging or solder ball are gained by means of diode laser soldering method with appropriate laser processing parameters,and the pitch of the QFP devices is as fine as to 0.4mm.Tensile strength of QFP micro-joints increases gradually with the increase of laser output power,the maximum tensile strength presents when the laser output power increase to a certain value.The results also indicate that the mechanical properties of QFP micro-joints soldered by diode laser soldering system are better than those of QFP micro-joints soldered by IR reflow soldering method.The experimental results may provide a theory guide for investigation of diode laser soldering.展开更多
Recently,the increasing interest in wearable technology for personal healthcare and smart virtual/augmented reality applications has led to the development of facile fabrication methods.Lasers have long been used to d...Recently,the increasing interest in wearable technology for personal healthcare and smart virtual/augmented reality applications has led to the development of facile fabrication methods.Lasers have long been used to develop original solutions to such challenging technological problems due to their remote,sterile,rapid,and site-selective processing of materials.In this review,recent developments in relevant laser processes are summarized under two separate categories.First,transformative approaches,such as for laser-induced graphene,are introduced.In addition to design optimization and the alteration of a native substrate,the latest advances under a transformative approach now enable more complex material compositions and multilayer device configurations through the simultaneous transformation of heterogeneous precursors,or the sequential addition of functional layers coupled with other electronic elements.In addition,the more conventional laser techniques,such as ablation,sintering,and synthesis,can still be used to enhance the functionality of an entire system through the expansion of applicable materials and the adoption of new mechanisms.Later,various wearable device components developed through the corresponding laser processes are discussed,with an emphasis on chemical/physical sensors and energy devices.In addition,special attention is given to applications that use multiple laser sources or processes,which lay the foundation for the all-laser fabrication of wearable devices.展开更多
This paper presents high quality YBa_(2)Cu_(3)O_(7-δ)(YBCO)thin films on LaAlO_(3)substrate for microwave devices prepared by pulsed laser deposition(PLD).The double-sided YBCO films cover a large area and have been ...This paper presents high quality YBa_(2)Cu_(3)O_(7-δ)(YBCO)thin films on LaAlO_(3)substrate for microwave devices prepared by pulsed laser deposition(PLD).The double-sided YBCO films cover a large area and have been optimized for key parameters relevant to microwave device applications,such as surface morphology and surface resistance(R_(s)).This was achieved by improving the target quality and increasing the oxygen pressure during deposition,respectively.To evaluate the suitability of the YBCO films for microwave devices,a pair of microwave filters based on microstrip fabricated on films from this work and a commercial company were compared.The results show that the YBCO films in this work could completely meet the requirements for microwave devices.展开更多
<div style="text-align:justify;"> In this study, a two-dimensional model describing thermal stress on a charge-coupled device (CCD) induced by ms laser pulses was examined. Considering the nonlinearity...<div style="text-align:justify;"> In this study, a two-dimensional model describing thermal stress on a charge-coupled device (CCD) induced by ms laser pulses was examined. Considering the nonlinearity of the CCD’s material parameters and the melting phase transition process of aluminum electrode materials was considered by using equivalent specific heat capacity method, the physical process where a laser pulse irradiating a CCD pixel array was simulated using COMSOL Multiphysics software. The temperature field and thermal stress field were calculated and analyzed. In order to clarify the mechanism producing damage on the CCD detector, Raman spectra from silicon were measured with a micro-Raman spectrometer to determine stress change in the CCD chip. The procedure presented herein illustrates a method for evaluating strain in a CCD after laser irradiation. </div>展开更多
Interface stability homogeneity control remains a challenging problem in large-scale laser-melting-deposited ti-tanium(LLMDT)alloy components for aerospace applications.In this study,the homogeneity of the interface s...Interface stability homogeneity control remains a challenging problem in large-scale laser-melting-deposited ti-tanium(LLMDT)alloy components for aerospace applications.In this study,the homogeneity of the interface stability of LLMDT components after post heat treatment was investigated.Recrystallized grains nucleated and grew in the equiaxed and columnar grain regions in the LLMDT part,whereas they did not form in the interface re-gion because the recrystallization driving force in the interface region was lower than that in the LLMDT part.The microstructures of the LLMDT components showed coarsened𝛼lamellae,and their width varied from 1.65μm to 2.18μm.The𝛼lamellae did not completely coarsen during post heat treatment(950°C/1 h/air cooling+550°C/4 h/air cooling)because of the low coarsening driving force.For the LLMDT components,the ultimate tensile strength(UTS)and yield strength(YS)were slightly different in different regions owing to the slight difference in the width of the𝛼lamellae.The elongation(EL)of the LLMDT components exhibited no difference,and there was nearly zero anisotropic ductility.The highest fluctuation ratios of the UTS,YS,and EL were 3.11%,3.8%,and 7.18%,respectively.The tensile properties of the LLMDT components showed no difference in the different regions,indicating interface stability homogeneity.展开更多
Recently,transmitting diverse signals in different cores of a multicore fiber(MCF)has greatly improved the communication capacity of a single fiber.In such an MCF-based communication system,mux/demux devices with broa...Recently,transmitting diverse signals in different cores of a multicore fiber(MCF)has greatly improved the communication capacity of a single fiber.In such an MCF-based communication system,mux/demux devices with broad bandwidth are of great significance.In this work,we design and fabricate a 19-channel mux/demux device based on femtosecond laser direct writing.The fabricated mux/demux device possesses an average insertion loss of 0.88 dB and intercore crosstalk of no more than−29.1 dB.Moreover,the fabricated mux/demux device features a broad bandwidth across the C+L band.Such a mux/demux device enables low-loss 19-core fiber(de)multiplexing over the whole C+L band,showing a convincing potential value in wavelength-space division multiplexing applications.In addition,a 19-core fiber fan-in/fan-out system is also established based on a pair of mux/demux devices in this work.展开更多
In this paper, we presented a method of using the l as er scanning triangulation for the non-contact 3D surface profile measurement of large-scale object. The characteristic of large-scale object non-contact mea surem...In this paper, we presented a method of using the l as er scanning triangulation for the non-contact 3D surface profile measurement of large-scale object. The characteristic of large-scale object non-contact mea surement is analyzed and the measuring method is proposed. Main factors influenc ing measurement precision such as image distortion and accurate designation of s peckle center are analyzed and methods of solving these problems are proposed. W e designed a combined filter by which the pulse noise and the Gaussian noise of speckle image can be eliminated efficiently. Using the characteristic of intensi ty distribution of laser speckle image we proposed a new approximating method th at could locate the center of laser speckle image at sub-pixel. The auxiliary v ariables are set to linearize the relationship between the image displacement an d the distance, the accurate values of laser triangulation system parameters cou ld be calibrated accurately and the measuring precision is increased remarkabl y. Using the above techniques we designed a measuring system based on laser sc anning triangulation. The results of the experiment show that these methods can raise the measuring precision of large-scale 3D surface profile effectively.展开更多
Accuracy measurement of the Non-soluble Deposit Density (NSDD) on the insulator surface is very important for the transmission line anti-pollution flashover works. A method to measure the NSDD on double sheds porcelai...Accuracy measurement of the Non-soluble Deposit Density (NSDD) on the insulator surface is very important for the transmission line anti-pollution flashover works. A method to measure the NSDD on double sheds porcelain insulator surface based on laser transmission principle is proposed in this paper. Laser unit and luminous intensity sensor are installed between the up and down surface of the double sheds porcelain insulators, two glass tablets are put between the double sheds. The contamination on the glass tablets will influence the luminous intensity that reaches the intensity sensor. The luminous signal is changed to electrical signal, and the insulator’s NSDD could be obtained based on the difference of luminous intensity. The device can be used in online monitoring of the insulator's NSDD condition on the insulator surface.展开更多
The pulsed laser deposition(PLD)technology was used to effectively create conductive nano and micro hafnium oxide with great purity and transparency for(HfO_(2))nanofilms.In many optoelectronics devices and their appl...The pulsed laser deposition(PLD)technology was used to effectively create conductive nano and micro hafnium oxide with great purity and transparency for(HfO_(2))nanofilms.In many optoelectronics devices and their applications,the presence of a high dielectric substance like a nano HfO2,between the metal contacts and the substrates was critical.We used the Pulsed Laser Deposition method to fabricate an Al/HfO_(2)/p-Si Schottky barrier diode where the nanostructured HfO2 films as an intermediate layer and varied substrate temperatures.The optical result reveals a high degree of transparency(93%).The optical bandgap of deposited HfO2 films was observed to vary between 4.9 and 5.3 eV,with a value of roughly 5.3 eV at the optimal preparation condition.The morphology of the surface shows a high homogeneous nano structure with the average values of the roughness about(0.3 nm).With regard to substrate temperature,the produced factor ideality for fabricated diode was determined to be lowering and the associated values of the barrier height rose based on I-Vcharacterization.With regard to substrate temperature,the produced factor ideality for fabricated diode was determined to be lowering and the associated values of the barrier height rose based on I-V characterization.The diode manufactured at 600℃,in particular,had a higher ideality factor value(n=3.2).展开更多
Laser shaping was introduced to maskless projection soft lithography by using digital micro-mirror device (DMD). The predesigned intensity pattern was imprinted onto the DMD and the input laser beam with a Gaussian or...Laser shaping was introduced to maskless projection soft lithography by using digital micro-mirror device (DMD). The predesigned intensity pattern was imprinted onto the DMD and the input laser beam with a Gaussian or quasi-Gaussian distribution will carry the pattern on DMD to etch the resin. It provides a method of precise control of laser beam shapes and?photon-induced curing behavior of resin. This technology provides an accurate micro-fabrication of microstructures used for micro-systems. As a virtual mask generator and a binary-amplitude spatial light modulator, DMD is equivalent to the masks in the conventional exposure system. As the virtual masks and shaped laser beam can be achieved flexibly, it is a good method of precision soft lithography for 2D/3D microstructures.展开更多
A silicon-based field emission light emitting diode for low-voltage operation is fabricated in the standard 0.35 μm 2P4M salieide complementary metal-oxide-semiconduetor （CMOS） technology. Partially overlapping p^...A silicon-based field emission light emitting diode for low-voltage operation is fabricated in the standard 0.35 μm 2P4M salieide complementary metal-oxide-semiconduetor （CMOS） technology. Partially overlapping p^＋ and n^＋ regions with a salicide block layer are employed in this device to constitute a heavily doped p^＋-n^＋ junction which has soft ＂knee＂ Zener breakdown characteristics, thus its working voltage can be reduced preferably below 5 V, and at the same time the power efficiency is improved. The spectra of this device are spread over 500nm to 1000nm with the main peak at about 722nm and an obvious red shift of the spectra peak is observed with the increasing current through the device. During the emission process, field emission rather than avalanche process plays a major role. Differences between low-voltage Zener breakdown emission and high-voltage avalanche breakdown emission performance are observed and compared.展开更多
In recent years, the narrow bandgap antimonide based compound semiconductors (ABCS) are widely regarded as the first candidate materials for fabrication of the third generation infrared photon detectors and integrated...In recent years, the narrow bandgap antimonide based compound semiconductors (ABCS) are widely regarded as the first candidate materials for fabrication of the third generation infrared photon detectors and integrated circuits with ultra-high speed and ultra-low power consumption. Due to their unique bandgap structure and physical properties, it makes a vast space to develop various novel devices, and becomes a hot research area in many developed countries such as USA, Japan, Germany and Israel etc. Research progress in the preparation and application of ABCS materials, existing problems and some latest results are briefly introduced.展开更多
Abstract Heavy metals in water can be deposited on graphite flakes, which can be used as an enrichment method for laser-induced breakdown spectroscopy （LIBS） and is studied in this paper. The graphite samples were p...Abstract Heavy metals in water can be deposited on graphite flakes, which can be used as an enrichment method for laser-induced breakdown spectroscopy （LIBS） and is studied in this paper. The graphite samples were prepared with an automatic device, which was composed of a loading and unloading module, a quantitatively adding solution module, a rapid heating and drying module and a precise rotating module. The experimental results showed that the sample preparation methods had no significant effect on sample distribution and the LIBS signal accumulated in 20 pulses was stable and repeatable. With an increasing amount of the sample solution on the graphite flake, the peak intensity at Cu I 324.75 nm accorded with the exponential function with a correlation coefficient of 0.9963 and the background intensity remained unchanged. The limit of detection （LOD） was calculated through linear fitting of the peak intensity versus the concentration. The LOD decreased rapidly with an increasing amount of sample solution until the amount exceeded 20 mL and the correlation coefficient of exponential function fitting was 0.991. The LOD of Pb, Ni, Cd, Cr and Zn after evaporating different amounts of sample solution on the graphite flakes was measured and the variation tendency of their LOD with sample solution amounts was similar to the tendency for Cu. The experimental data and conclusions could provide a reference for automatic sample preparation and heavy metal in situ detection.展开更多
The paper introduces a new laser interferometry-based method for diagnosis of random media by means of high accuracy angle measurements and describes the results of its development and testing. Theoretical calculation...The paper introduces a new laser interferometry-based method for diagnosis of random media by means of high accuracy angle measurements and describes the results of its development and testing. Theoretical calculations of the dependence of the range of the laser interferometer on laser beam parameters, device geometry, and atmospheric turbulence characteristics are reported. It is demonstrated that at moderate turbulence intensities corresponding to those observed most frequently in turbulent atmosphere at moderate latitudes and with low interference contrast values, the performance range of the laser interferometer-based device exceeds 5 km.展开更多
An ultrafast spectrum programmable femtosecond laser may enhance the performance of a wide variety of scientific applications,e.g.,multi-photon imaging.In this paper,we report a digital micromirror device(DMD)-based u...An ultrafast spectrum programmable femtosecond laser may enhance the performance of a wide variety of scientific applications,e.g.,multi-photon imaging.In this paper,we report a digital micromirror device(DMD)-based ultrafast pulse shaper,i.e.,DUPS,for femtosecond laser arbitrary amplitude shaping-the first time a programmable binary device reported to shape the amplitudes of ultrafast pulses spectrum at up to 32 kHz rate over a broad wavelength range.The DUPS is highly effcient,compact,and low cost based on the use of a DMD in combination with a transmission grating.Spatial and temporal dispersion introduced by the DUPS is compensated by a quasi-4-f setup and a grating pair,respectively.Femtosecond pulses with arbitrary spectrum shapes,including rectangular,sawtooth,triangular,double-pulse,and exponential profile,have been demonstrated in our experiments.A feedback operation process is implemented in the DUPS to ensure a robust and repeatable shaping process.The total effciency of the DUPS for amplitude shaping is measured to be 27%.展开更多
Gallium nitride(GaN)/porous silicon(PSi)film was prepared using a pulsed laser deposition method and 1064 nm Nd:YAG laser for optoelectronic applications and a series of Psi substrates were fabricated using a photoele...Gallium nitride(GaN)/porous silicon(PSi)film was prepared using a pulsed laser deposition method and 1064 nm Nd:YAG laser for optoelectronic applications and a series of Psi substrates were fabricated using a photoelectrochemical etching method assisted by laser at different etching times for 2.5–15 min at 2.5 min intervals.X-ray diffraction,room-temperature photoluminescence,atomic force microscopy and field emission scanning electron microscopy images,and electrical characteristics in the prepared GaN on the Psi film were investigated.The optimum Psi substrate was obtained under the following conditions:10 min,10 mA/cm^(2),and 24%hydrofluoric acid.The substrate exhibited two highly cubic crystalline structures at(200)and(400)orientations and yellow visible band photoluminescence,and homogeneous pores formed over the entire surface.The pores had steep oval shapes and were accompanied by small dark pores that appeared topographically and morphologically.The GaN/Psi film fabricated through PLD exhibited a high and hexagonal crystallographic texture in the(002)plane.Spectroscopic properties results revealed that the photoluminescence emission of the deposited nano-GaN films was in the ultraviolet band(374 nm)related to GaN material and in the near-infrared band(730 nm)related to the Psi substrate.The topographical and morphological results of the GaN films confirmed that the deposited film contained spherical grains with an average diameter of 51.8 nm and surface roughness of 4.8 nm.The GaN/Psi surface showed a cauliflower-like morphology,and the built-in voltage decreased from 3.4 to 2.7 eV after deposition.The fabricated GaN/Psi film exhibited good electrical characteristics.展开更多
The laser-assisted manufacturing technology has significant advantages in meeting various demands such as complex structures,functional integration,customized devices,and cost-effectiveness,which makes it a highly att...The laser-assisted manufacturing technology has significant advantages in meeting various demands such as complex structures,functional integration,customized devices,and cost-effectiveness,which makes it a highly attractive option for fabricating sensors.In this review,the latest advancements and strategies in intelligent sensor development through laser processing were surveyed and outlined following the interaction of laser and materials.Laser-assisted manufacturing technologies have been extensively applied in materials science and device processing.Firstly,laser technology can be utilized in a wide range of materials,encompassing carbon-based materials,metals,and metallic oxides.In the field of device scale processing,laser manufacturing is widely used in micro/nano structures,planar device construction,and stereoscopic electronic devices such as cutting,engraving,and lithography.Additionally,laser technology provides robust support for sensor applications,covering fields such as pressure sensing,temperature sensing,gas sensing,and biosensors.Furthermore,laser considerably serves in real application areas such as multifunctional sensing systems,actuators,and robots.The widespread application of laser manufacturing technology in sensor platform fabrication offers effective solutions for realizing the miniaturization,multifunctionality,and integration of sensors.展开更多
We report on the fabrication and characterization of multi-leg bismuth telluride (Bi2Te3) and antimony telluride (Sb2Te3) thermoelectric devices. The two materials were deposited, on top of SiO2/Si substrates, using P...We report on the fabrication and characterization of multi-leg bismuth telluride (Bi2Te3) and antimony telluride (Sb2Te3) thermoelectric devices. The two materials were deposited, on top of SiO2/Si substrates, using Pulsed Laser Deposition (PLD). The SiO2 layer was used to provide insulation between the devices and the Si wafer. Copper was used as an electrical connector and a contact for the junctions. Four devices were built, where the Bi2Te3 and Sb2Te3 were deposited at substrate temperatures of 100°C, 200°C, 300°C and 400°C. The results show that the device has a voltage sensitivity of up to 146 μV/K and temperature sensitivity of 6.8 K/mV.展开更多
基金the School of Engineering and Built Environment at Anglia Ruskin University,UK,for the supportthe support of IRC-CSS and the Electrical Engineering Department,KFUPM,Saudi Arabia。
文摘We discuss recent progress in using machine-learning(ML)-enabled inverse design techniques applied to photonic devices and components.Specifically,we highlight the design of optical sources,including fiber and semiconductor lasers,as well as Raman and semiconductor optical amplifiers.Although inverse design approaches for optical detectors remain relatively underexplored,we examine optical layers,particularly metamaterial absorbers,as promising candidates for high-performance optical detection.In addition,we underscore advancements in inverse designing passive optical components,including beam splitters,gratings,and optical fibers.These optical blocks are fundamental in developing next-generation standalone optical communication systems and optical sensing networks,including integrated sensing and communication technologies.While categorizing various reported deep learning architectures across five paradigms,we offer a paradigm-based perspective that reveals how different ML techniques function within modern inverse design methods and enable fast,data-driven solutions that significantly reduce design time and computational demands compared with traditional optimization methods.
基金supported by the Nano&Material Technology Development Program through the National Research Foundation of Korea(NRF)funded by the Ministry of Science and ICT(Grant Nos.RS-2024-00403639 and RS2024-00411904)。
文摘Artificial sensory systems(ASS)are pivotal to next-generation extended reality technologies,now evolving into flexible platforms for comfortable wear and immersive user experiences,while ensuring high performance and operational reliability.To address these demands,metal-based nanoparticles(NPs),such as noble metal,oxide,and multi-elemental NPs,have been extensively incorporated into functional materials of sensory and synaptic devices due to their tunable optical,electrical,and chemical properties,enhancing sensory precision,stability,and environmental adaptability.However,traditional NP fabrication methods often involve complex processing,residual contaminants,and scalability issues,limiting their effectiveness in ASS applications.State-of-the-art laser ablation in liquids(LAL)presents a promising alternative,offering scalable production of surfactant-free NPs with customizable physicochemical properties,though their application in electronics remains underexplored.This review delves into the transformative potential of LAL-fabricated NPs in ASS,covering the fundamental mechanisms of LAL,the role of process parameters,the derivative strategies for size modulation,the diversity of metal-based NPs,their applications in sensory and synaptic devices,and the challenges and perspectives for meeting industrial standards.Bridging the gap between LAL and ASS is poised to revolutionize both industrial manufacturing and academic research by offering scalable solutions to overcome intrinsic tradeoffs between flexibility and performance,fostering innovations in human-centric,immersive electronics.
基金supported by Nanjing University of Aeronautics and Astronautics Doctoral Dissertation Innovation and Excellence Producing Foundation of China(Grant No.BCXJ09-07)Jiangsu Provincial General Colleges and Universities Postgraduate Scientific Research Innovative Plan of China(Grant No.CX09B_074Z)the Six Kind Skilled Personnel Project of Jiangsu Province of China(Grant No.06-E-020)
文摘The laser provides a controllable means of supplying localized energy for solder joint formation and is a valuable tool in electronics manufacture.Diode laser soldering for fine pitch QFP devices were carried out with Sn-Ag-Cu lead-free solder and Sn-Pb solder respectively,and the mechanical properties of micro-joints of the QFP devices were tested and studied by STR-1000 micro-joints tester.The results indicate that sound QFP micro-joints without bridging or solder ball are gained by means of diode laser soldering method with appropriate laser processing parameters,and the pitch of the QFP devices is as fine as to 0.4mm.Tensile strength of QFP micro-joints increases gradually with the increase of laser output power,the maximum tensile strength presents when the laser output power increase to a certain value.The results also indicate that the mechanical properties of QFP micro-joints soldered by diode laser soldering system are better than those of QFP micro-joints soldered by IR reflow soldering method.The experimental results may provide a theory guide for investigation of diode laser soldering.
基金supported by the Basic Research Program through the National Research Foundation of Korea(NRF)(Nos.2022R1C1C1006593,2022R1A4A3031263,and RS-2023-00271166)the National Science Foundation(Nos.2054098 and 2213693)+1 种基金the National Natural Science Foundation of China(No.52105593)Zhejiang Provincial Natural Science Foundation of China(No.LDQ24E050001).EH acknowledges a fellowship from the Hyundai Motor Chung Mong-Koo Foundation.
文摘Recently,the increasing interest in wearable technology for personal healthcare and smart virtual/augmented reality applications has led to the development of facile fabrication methods.Lasers have long been used to develop original solutions to such challenging technological problems due to their remote,sterile,rapid,and site-selective processing of materials.In this review,recent developments in relevant laser processes are summarized under two separate categories.First,transformative approaches,such as for laser-induced graphene,are introduced.In addition to design optimization and the alteration of a native substrate,the latest advances under a transformative approach now enable more complex material compositions and multilayer device configurations through the simultaneous transformation of heterogeneous precursors,or the sequential addition of functional layers coupled with other electronic elements.In addition,the more conventional laser techniques,such as ablation,sintering,and synthesis,can still be used to enhance the functionality of an entire system through the expansion of applicable materials and the adoption of new mechanisms.Later,various wearable device components developed through the corresponding laser processes are discussed,with an emphasis on chemical/physical sensors and energy devices.In addition,special attention is given to applications that use multiple laser sources or processes,which lay the foundation for the all-laser fabrication of wearable devices.
基金Project supported by the National Key Basic Research Program of China(Grant Nos.2022YFA1603903 and 2021YFA0718700)the Key-Area Research and Development Program of Guangdong Province,China(Grant No.2020B0101340002)+3 种基金the National Natural Science Foundation of China(Grant Nos.61971415,51972012,11927808,119611410,11961141008,and 12274439)the Strategic Priority Research Program(B)of Chinese Academy of Sciences(Grant No.XDB25000000)Beijing Natural Science Foundation(Grant No.Z190008)Basic Research Youth Team of Chinese Academy of Sciences(Grant No.2022YSBR-048).
文摘This paper presents high quality YBa_(2)Cu_(3)O_(7-δ)(YBCO)thin films on LaAlO_(3)substrate for microwave devices prepared by pulsed laser deposition(PLD).The double-sided YBCO films cover a large area and have been optimized for key parameters relevant to microwave device applications,such as surface morphology and surface resistance(R_(s)).This was achieved by improving the target quality and increasing the oxygen pressure during deposition,respectively.To evaluate the suitability of the YBCO films for microwave devices,a pair of microwave filters based on microstrip fabricated on films from this work and a commercial company were compared.The results show that the YBCO films in this work could completely meet the requirements for microwave devices.
文摘<div style="text-align:justify;"> In this study, a two-dimensional model describing thermal stress on a charge-coupled device (CCD) induced by ms laser pulses was examined. Considering the nonlinearity of the CCD’s material parameters and the melting phase transition process of aluminum electrode materials was considered by using equivalent specific heat capacity method, the physical process where a laser pulse irradiating a CCD pixel array was simulated using COMSOL Multiphysics software. The temperature field and thermal stress field were calculated and analyzed. In order to clarify the mechanism producing damage on the CCD detector, Raman spectra from silicon were measured with a micro-Raman spectrometer to determine stress change in the CCD chip. The procedure presented herein illustrates a method for evaluating strain in a CCD after laser irradiation. </div>
基金supported by the National Key Research and Devel-opment Program of China(Grant No.2022YFB4602205).
文摘Interface stability homogeneity control remains a challenging problem in large-scale laser-melting-deposited ti-tanium(LLMDT)alloy components for aerospace applications.In this study,the homogeneity of the interface stability of LLMDT components after post heat treatment was investigated.Recrystallized grains nucleated and grew in the equiaxed and columnar grain regions in the LLMDT part,whereas they did not form in the interface re-gion because the recrystallization driving force in the interface region was lower than that in the LLMDT part.The microstructures of the LLMDT components showed coarsened𝛼lamellae,and their width varied from 1.65μm to 2.18μm.The𝛼lamellae did not completely coarsen during post heat treatment(950°C/1 h/air cooling+550°C/4 h/air cooling)because of the low coarsening driving force.For the LLMDT components,the ultimate tensile strength(UTS)and yield strength(YS)were slightly different in different regions owing to the slight difference in the width of the𝛼lamellae.The elongation(EL)of the LLMDT components exhibited no difference,and there was nearly zero anisotropic ductility.The highest fluctuation ratios of the UTS,YS,and EL were 3.11%,3.8%,and 7.18%,respectively.The tensile properties of the LLMDT components showed no difference in the different regions,indicating interface stability homogeneity.
基金supported by the National Natural Science Foundation of China(Grant Nos.62125503 and 62261160388)the Key R&D Program of Hubei Province of China(Grant Nos.2020BAB001 and 2021BAA024)+3 种基金the Key R&D Program of Guangdong Province(Grant No.2018B030325002)the Science and Technology Innovation Commission of Shenzhen(Grant No.JCYJ20200109114018750)the Open Projects Foundation(No.SKLD2201)of State Key Laboratory of Optical Fiber and Cable Manufacture Technology(YOFC)the Innovation Project of Optics Valley Laboratory(Grant No.OVL2021BG004).
文摘Recently,transmitting diverse signals in different cores of a multicore fiber(MCF)has greatly improved the communication capacity of a single fiber.In such an MCF-based communication system,mux/demux devices with broad bandwidth are of great significance.In this work,we design and fabricate a 19-channel mux/demux device based on femtosecond laser direct writing.The fabricated mux/demux device possesses an average insertion loss of 0.88 dB and intercore crosstalk of no more than−29.1 dB.Moreover,the fabricated mux/demux device features a broad bandwidth across the C+L band.Such a mux/demux device enables low-loss 19-core fiber(de)multiplexing over the whole C+L band,showing a convincing potential value in wavelength-space division multiplexing applications.In addition,a 19-core fiber fan-in/fan-out system is also established based on a pair of mux/demux devices in this work.
文摘In this paper, we presented a method of using the l as er scanning triangulation for the non-contact 3D surface profile measurement of large-scale object. The characteristic of large-scale object non-contact mea surement is analyzed and the measuring method is proposed. Main factors influenc ing measurement precision such as image distortion and accurate designation of s peckle center are analyzed and methods of solving these problems are proposed. W e designed a combined filter by which the pulse noise and the Gaussian noise of speckle image can be eliminated efficiently. Using the characteristic of intensi ty distribution of laser speckle image we proposed a new approximating method th at could locate the center of laser speckle image at sub-pixel. The auxiliary v ariables are set to linearize the relationship between the image displacement an d the distance, the accurate values of laser triangulation system parameters cou ld be calibrated accurately and the measuring precision is increased remarkabl y. Using the above techniques we designed a measuring system based on laser sc anning triangulation. The results of the experiment show that these methods can raise the measuring precision of large-scale 3D surface profile effectively.
文摘Accuracy measurement of the Non-soluble Deposit Density (NSDD) on the insulator surface is very important for the transmission line anti-pollution flashover works. A method to measure the NSDD on double sheds porcelain insulator surface based on laser transmission principle is proposed in this paper. Laser unit and luminous intensity sensor are installed between the up and down surface of the double sheds porcelain insulators, two glass tablets are put between the double sheds. The contamination on the glass tablets will influence the luminous intensity that reaches the intensity sensor. The luminous signal is changed to electrical signal, and the insulator’s NSDD could be obtained based on the difference of luminous intensity. The device can be used in online monitoring of the insulator's NSDD condition on the insulator surface.
文摘The pulsed laser deposition(PLD)technology was used to effectively create conductive nano and micro hafnium oxide with great purity and transparency for(HfO_(2))nanofilms.In many optoelectronics devices and their applications,the presence of a high dielectric substance like a nano HfO2,between the metal contacts and the substrates was critical.We used the Pulsed Laser Deposition method to fabricate an Al/HfO_(2)/p-Si Schottky barrier diode where the nanostructured HfO2 films as an intermediate layer and varied substrate temperatures.The optical result reveals a high degree of transparency(93%).The optical bandgap of deposited HfO2 films was observed to vary between 4.9 and 5.3 eV,with a value of roughly 5.3 eV at the optimal preparation condition.The morphology of the surface shows a high homogeneous nano structure with the average values of the roughness about(0.3 nm).With regard to substrate temperature,the produced factor ideality for fabricated diode was determined to be lowering and the associated values of the barrier height rose based on I-Vcharacterization.With regard to substrate temperature,the produced factor ideality for fabricated diode was determined to be lowering and the associated values of the barrier height rose based on I-V characterization.The diode manufactured at 600℃,in particular,had a higher ideality factor value(n=3.2).
文摘Laser shaping was introduced to maskless projection soft lithography by using digital micro-mirror device (DMD). The predesigned intensity pattern was imprinted onto the DMD and the input laser beam with a Gaussian or quasi-Gaussian distribution will carry the pattern on DMD to etch the resin. It provides a method of precise control of laser beam shapes and?photon-induced curing behavior of resin. This technology provides an accurate micro-fabrication of microstructures used for micro-systems. As a virtual mask generator and a binary-amplitude spatial light modulator, DMD is equivalent to the masks in the conventional exposure system. As the virtual masks and shaped laser beam can be achieved flexibly, it is a good method of precision soft lithography for 2D/3D microstructures.
基金Supported by the National Natural Science Foundation of China under Grant Nos 60536030, 60776024, 60877035 and 90820002, the National High-Technology Research and Development Program of China under Grant Nos 2007AA04Z329 and 2007AA04Z254.
文摘A silicon-based field emission light emitting diode for low-voltage operation is fabricated in the standard 0.35 μm 2P4M salieide complementary metal-oxide-semiconduetor （CMOS） technology. Partially overlapping p^＋ and n^＋ regions with a salicide block layer are employed in this device to constitute a heavily doped p^＋-n^＋ junction which has soft ＂knee＂ Zener breakdown characteristics, thus its working voltage can be reduced preferably below 5 V, and at the same time the power efficiency is improved. The spectra of this device are spread over 500nm to 1000nm with the main peak at about 722nm and an obvious red shift of the spectra peak is observed with the increasing current through the device. During the emission process, field emission rather than avalanche process plays a major role. Differences between low-voltage Zener breakdown emission and high-voltage avalanche breakdown emission performance are observed and compared.
文摘In recent years, the narrow bandgap antimonide based compound semiconductors (ABCS) are widely regarded as the first candidate materials for fabrication of the third generation infrared photon detectors and integrated circuits with ultra-high speed and ultra-low power consumption. Due to their unique bandgap structure and physical properties, it makes a vast space to develop various novel devices, and becomes a hot research area in many developed countries such as USA, Japan, Germany and Israel etc. Research progress in the preparation and application of ABCS materials, existing problems and some latest results are briefly introduced.
基金supported by National Natural Science Foundation of China(No.60908018)National High Technology Research and Development Program of China(No.2013AA065502)Anhui Province Outstanding Youth Science Fund of China(No.1108085J19)
文摘Abstract Heavy metals in water can be deposited on graphite flakes, which can be used as an enrichment method for laser-induced breakdown spectroscopy （LIBS） and is studied in this paper. The graphite samples were prepared with an automatic device, which was composed of a loading and unloading module, a quantitatively adding solution module, a rapid heating and drying module and a precise rotating module. The experimental results showed that the sample preparation methods had no significant effect on sample distribution and the LIBS signal accumulated in 20 pulses was stable and repeatable. With an increasing amount of the sample solution on the graphite flake, the peak intensity at Cu I 324.75 nm accorded with the exponential function with a correlation coefficient of 0.9963 and the background intensity remained unchanged. The limit of detection （LOD） was calculated through linear fitting of the peak intensity versus the concentration. The LOD decreased rapidly with an increasing amount of sample solution until the amount exceeded 20 mL and the correlation coefficient of exponential function fitting was 0.991. The LOD of Pb, Ni, Cd, Cr and Zn after evaporating different amounts of sample solution on the graphite flakes was measured and the variation tendency of their LOD with sample solution amounts was similar to the tendency for Cu. The experimental data and conclusions could provide a reference for automatic sample preparation and heavy metal in situ detection.
文摘The paper introduces a new laser interferometry-based method for diagnosis of random media by means of high accuracy angle measurements and describes the results of its development and testing. Theoretical calculations of the dependence of the range of the laser interferometer on laser beam parameters, device geometry, and atmospheric turbulence characteristics are reported. It is demonstrated that at moderate turbulence intensities corresponding to those observed most frequently in turbulent atmosphere at moderate latitudes and with low interference contrast values, the performance range of the laser interferometer-based device exceeds 5 km.
基金This work is partially supported by the HKSAR Innovation and Technology Commission(ITC)Innovation and Technology Fund(ITF),ITS/179/16FP,as well as the HKSAR Research Grants Council,General Research Fund,Project No.14202815.
文摘An ultrafast spectrum programmable femtosecond laser may enhance the performance of a wide variety of scientific applications,e.g.,multi-photon imaging.In this paper,we report a digital micromirror device(DMD)-based ultrafast pulse shaper,i.e.,DUPS,for femtosecond laser arbitrary amplitude shaping-the first time a programmable binary device reported to shape the amplitudes of ultrafast pulses spectrum at up to 32 kHz rate over a broad wavelength range.The DUPS is highly effcient,compact,and low cost based on the use of a DMD in combination with a transmission grating.Spatial and temporal dispersion introduced by the DUPS is compensated by a quasi-4-f setup and a grating pair,respectively.Femtosecond pulses with arbitrary spectrum shapes,including rectangular,sawtooth,triangular,double-pulse,and exponential profile,have been demonstrated in our experiments.A feedback operation process is implemented in the DUPS to ensure a robust and repeatable shaping process.The total effciency of the DUPS for amplitude shaping is measured to be 27%.
文摘Gallium nitride(GaN)/porous silicon(PSi)film was prepared using a pulsed laser deposition method and 1064 nm Nd:YAG laser for optoelectronic applications and a series of Psi substrates were fabricated using a photoelectrochemical etching method assisted by laser at different etching times for 2.5–15 min at 2.5 min intervals.X-ray diffraction,room-temperature photoluminescence,atomic force microscopy and field emission scanning electron microscopy images,and electrical characteristics in the prepared GaN on the Psi film were investigated.The optimum Psi substrate was obtained under the following conditions:10 min,10 mA/cm^(2),and 24%hydrofluoric acid.The substrate exhibited two highly cubic crystalline structures at(200)and(400)orientations and yellow visible band photoluminescence,and homogeneous pores formed over the entire surface.The pores had steep oval shapes and were accompanied by small dark pores that appeared topographically and morphologically.The GaN/Psi film fabricated through PLD exhibited a high and hexagonal crystallographic texture in the(002)plane.Spectroscopic properties results revealed that the photoluminescence emission of the deposited nano-GaN films was in the ultraviolet band(374 nm)related to GaN material and in the near-infrared band(730 nm)related to the Psi substrate.The topographical and morphological results of the GaN films confirmed that the deposited film contained spherical grains with an average diameter of 51.8 nm and surface roughness of 4.8 nm.The GaN/Psi surface showed a cauliflower-like morphology,and the built-in voltage decreased from 3.4 to 2.7 eV after deposition.The fabricated GaN/Psi film exhibited good electrical characteristics.
基金supported by National Key Research and Development Program of China(2023YFB3210400)the National Natural Science Foundation of China(52472097 and 52102171)+2 种基金Natural Science Foundation of Shandong Province(ZR2021JQ15,ZR2023LLZ008 and ZR2022YQ42)Taishan Scholar Project of Shandong Province(tstp20240515)Innovative Team Project of Jinan(2021GXRC019).
文摘The laser-assisted manufacturing technology has significant advantages in meeting various demands such as complex structures,functional integration,customized devices,and cost-effectiveness,which makes it a highly attractive option for fabricating sensors.In this review,the latest advancements and strategies in intelligent sensor development through laser processing were surveyed and outlined following the interaction of laser and materials.Laser-assisted manufacturing technologies have been extensively applied in materials science and device processing.Firstly,laser technology can be utilized in a wide range of materials,encompassing carbon-based materials,metals,and metallic oxides.In the field of device scale processing,laser manufacturing is widely used in micro/nano structures,planar device construction,and stereoscopic electronic devices such as cutting,engraving,and lithography.Additionally,laser technology provides robust support for sensor applications,covering fields such as pressure sensing,temperature sensing,gas sensing,and biosensors.Furthermore,laser considerably serves in real application areas such as multifunctional sensing systems,actuators,and robots.The widespread application of laser manufacturing technology in sensor platform fabrication offers effective solutions for realizing the miniaturization,multifunctionality,and integration of sensors.
文摘We report on the fabrication and characterization of multi-leg bismuth telluride (Bi2Te3) and antimony telluride (Sb2Te3) thermoelectric devices. The two materials were deposited, on top of SiO2/Si substrates, using Pulsed Laser Deposition (PLD). The SiO2 layer was used to provide insulation between the devices and the Si wafer. Copper was used as an electrical connector and a contact for the junctions. Four devices were built, where the Bi2Te3 and Sb2Te3 were deposited at substrate temperatures of 100°C, 200°C, 300°C and 400°C. The results show that the device has a voltage sensitivity of up to 146 μV/K and temperature sensitivity of 6.8 K/mV.
