A fixed artificial source(greater than 200 kW) was used and the source location was selected at a high resistivity region to ensure high emission efficiency. Some publications used the "earth-ionosphere" mod...A fixed artificial source(greater than 200 kW) was used and the source location was selected at a high resistivity region to ensure high emission efficiency. Some publications used the "earth-ionosphere" mode in modeling the electromagnetic(EM) fields with the offset up to a thousand kilometer, and such EM fields still have a signal/noise ratio of 10-20 dB. This means that a new EM method with fixed source is feasible, but in their calculation, the displacement in air was neglected. In this work, some three-layer modeling results were presented to illustrate the basic EM fields' characteristics in the near, far and waveguide areas under "earth-ionosphere" mode, and a standard is given to distinguish the boundary of near, far and waveguide areas. Due to the influence of the ionosphere and displacement current in the air, the "earth-ionosphere" mode EM fields have an extra waveguide zone, where the fields' behavior is very different from that of the far field zone.展开更多
The band alignment of HfO2 film on p-type （100） InP substrate grown by magnetron sputtering was investigated.The chemical states and bonding characteristics of the system were characterized by X-ray photoelectron sp...The band alignment of HfO2 film on p-type （100） InP substrate grown by magnetron sputtering was investigated.The chemical states and bonding characteristics of the system were characterized by X-ray photoelectron spectroscopy （XPS）.The results show that there is no existence of Hf-P or Hf-In and there are interfacial In2O3 and InPO4 at the interface.Ultraviolet spectrophotometer （UVS） was employed to obtain the band gap value of HfO2.In 3d and Hf 4f core-level spectra and valence spectra were employed to obtain the valence band offset of HfO2/InP.Experimental results show that the （5.88 ± 0.05） eV band gap of HfO2 is aligned to the band gap of InP with a conduction band offset （△Ec） of （2.74 ± 0.05） eV and a valence band offset （△Ev） of （1.80 ± 0.05） eV.Compared with HfO2 on Si,HfO2 on InP exhibits a much larger conduction band offset （1.35 eV larger）,which is beneficial to suppress the tunneling leakage current.展开更多
基金Projects(41204054,41541036,41604111)supported by the National Natural Science Foundation of China
文摘A fixed artificial source(greater than 200 kW) was used and the source location was selected at a high resistivity region to ensure high emission efficiency. Some publications used the "earth-ionosphere" mode in modeling the electromagnetic(EM) fields with the offset up to a thousand kilometer, and such EM fields still have a signal/noise ratio of 10-20 dB. This means that a new EM method with fixed source is feasible, but in their calculation, the displacement in air was neglected. In this work, some three-layer modeling results were presented to illustrate the basic EM fields' characteristics in the near, far and waveguide areas under "earth-ionosphere" mode, and a standard is given to distinguish the boundary of near, far and waveguide areas. Due to the influence of the ionosphere and displacement current in the air, the "earth-ionosphere" mode EM fields have an extra waveguide zone, where the fields' behavior is very different from that of the far field zone.
基金financially supported by the National Natural Science Foundation of China(Nos.50932001,51102020,and 51202013)
文摘The band alignment of HfO2 film on p-type （100） InP substrate grown by magnetron sputtering was investigated.The chemical states and bonding characteristics of the system were characterized by X-ray photoelectron spectroscopy （XPS）.The results show that there is no existence of Hf-P or Hf-In and there are interfacial In2O3 and InPO4 at the interface.Ultraviolet spectrophotometer （UVS） was employed to obtain the band gap value of HfO2.In 3d and Hf 4f core-level spectra and valence spectra were employed to obtain the valence band offset of HfO2/InP.Experimental results show that the （5.88 ± 0.05） eV band gap of HfO2 is aligned to the band gap of InP with a conduction band offset （△Ec） of （2.74 ± 0.05） eV and a valence band offset （△Ev） of （1.80 ± 0.05） eV.Compared with HfO2 on Si,HfO2 on InP exhibits a much larger conduction band offset （1.35 eV larger）,which is beneficial to suppress the tunneling leakage current.
