The power module of the Insulated Gate Bipolar Transistor(IGBT)is the core component of the traction transmission system of high-speed trains.The module's junction temperature is a critical factor in determining d...The power module of the Insulated Gate Bipolar Transistor(IGBT)is the core component of the traction transmission system of high-speed trains.The module's junction temperature is a critical factor in determining device reliability.Existing temperature monitoring methods based on the electro-thermal coupling model have limitations,such as ignoring device interactions and high computational complexity.To address these issues,an analysis of the parameters influencing IGBT failure is conducted,and a temperature monitoring method based on the Macro-Micro Attention Long Short-Term Memory(MMALSTM)recursive neural network is proposed,which takes the forward voltage drop and collector current as features.Compared with the traditional electricalthermal coupling model method,it requires fewer monitoring parameters and eliminates the complex loss calculation and equivalent thermal resistance network establishment process.The simulation model of a highspeed train traction system has been established to explore the accuracy and efficiency of MMALSTM-based prediction methods for IGBT power module junction temperature.The simulation outcomes,which deviate only 3.2% from the theoretical calculation results of the electric-thermal coupling model,confirm the reliability of this approach for predicting the temperature of IGBT power modules.展开更多
A junction temperature monitoring method has been presented based on the on-state voltage at high currents.With a simplified physical model,this method mapped the relationship between junction temperature and on-state...A junction temperature monitoring method has been presented based on the on-state voltage at high currents.With a simplified physical model,this method mapped the relationship between junction temperature and on-state voltage.The tough calibration and signal sensing issues are solved.Verified by body-diode voltage detecting method,the presented method shows a good performance and high accuracy,in the meantime,it would not change the modulation strategy and topology of the converter.展开更多
The aim of this study is to achieve online monitoring of the junction temperature of double-sided-cooling insulated gate bipolar transistor(IGBT)power modules by using the on-state voltage under a high current to maxi...The aim of this study is to achieve online monitoring of the junction temperature of double-sided-cooling insulated gate bipolar transistor(IGBT)power modules by using the on-state voltage under a high current to maximize the utilization of IGBT power chips.Online junction temperature measurement plays an important role in improving the reliability of the inverter with IGBT,increasing the power density of the motor controller of electric vehicles,and reducing the cost of electric vehicles.展开更多
By integrating a temperature-adaptive function, an active gate driver (AGD) enhances the switching performance of silicon carbide (SiC) MOSFETs under varying temperature conditions. However, the lack of analytical exp...By integrating a temperature-adaptive function, an active gate driver (AGD) enhances the switching performance of silicon carbide (SiC) MOSFETs under varying temperature conditions. However, the lack of analytical expressions describing the coupling between AGD parameters and temperature variation limits the broader application of this method, particularly in SiC modules that exhibit complicated device transient behaviors. To address this challenge, a mathematical model of the transient behavior of an SiC module is developed to investigate the relationship among AGD parameters, junction temperature, and switching performance. The analysis reveals that the impact of temperature on switching performance is directly linked to the duration of each gate resistance. Accordingly, a temperature-adaptive AGD for SiC MOSFET modules is proposed. Online junction temperature monitoring is achieved using turn-on delay detection, and the duration of each gate’s driving resistance is dynamically adjusted. The proposed temperature-adaptive AGD is validated experimentally using a commercial 1.2 kV/560 A SiC MOSFET at 600 V/200 A. Experimental results across a temperature range of 20 ℃ to 100 ℃ demonstrate that electrical stress variation remains within 15%, while loss variation does not exceed 10%.展开更多
The hybrid structure of a power-module package is summarized and classified.Basic and extended planar wire-bond designs are analyzed and compared with regular wire-bond modules and planar modules,respectively.The auto...The hybrid structure of a power-module package is summarized and classified.Basic and extended planar wire-bond designs are analyzed and compared with regular wire-bond modules and planar modules,respectively.The automatic layout method can improve the electrical and thermal performance of hybrid structures.A state-of-the-art hybrid structure is introduced,and suggestions for alleviating the current and temperature imbalances for future designs are provided.展开更多
In this paper,an offline evaluation method for the cooling capability of three-phase insulated-gate bipolar transistor(IGBT)inverters is presented,which can better emulate real working conditions.With a properly desig...In this paper,an offline evaluation method for the cooling capability of three-phase insulated-gate bipolar transistor(IGBT)inverters is presented,which can better emulate real working conditions.With a properly designed sudden-stop control sequence,the conventional junction temperature monitoring method at a low current is used to calculate the junction temperature before the sudden stop of an inverter.This can solve the challenging switching loss calculation issue in conventional methods.Finally,the feasibility,control sequence,and electrical behaviors of the proposed method are validated through experimental tests.展开更多
基金supported by the Science and Technology Project of the Headquarters of the State Grid Corporation of China(52199922001U).
文摘The power module of the Insulated Gate Bipolar Transistor(IGBT)is the core component of the traction transmission system of high-speed trains.The module's junction temperature is a critical factor in determining device reliability.Existing temperature monitoring methods based on the electro-thermal coupling model have limitations,such as ignoring device interactions and high computational complexity.To address these issues,an analysis of the parameters influencing IGBT failure is conducted,and a temperature monitoring method based on the Macro-Micro Attention Long Short-Term Memory(MMALSTM)recursive neural network is proposed,which takes the forward voltage drop and collector current as features.Compared with the traditional electricalthermal coupling model method,it requires fewer monitoring parameters and eliminates the complex loss calculation and equivalent thermal resistance network establishment process.The simulation model of a highspeed train traction system has been established to explore the accuracy and efficiency of MMALSTM-based prediction methods for IGBT power module junction temperature.The simulation outcomes,which deviate only 3.2% from the theoretical calculation results of the electric-thermal coupling model,confirm the reliability of this approach for predicting the temperature of IGBT power modules.
基金Supported by the National Key Research and Development Program of China(2016YFB0100600)the Key Program of Bureau of Frontier Sciences and Education,Chinese Academy of Sciences(QYZDBSSW-JSC044).
文摘A junction temperature monitoring method has been presented based on the on-state voltage at high currents.With a simplified physical model,this method mapped the relationship between junction temperature and on-state voltage.The tough calibration and signal sensing issues are solved.Verified by body-diode voltage detecting method,the presented method shows a good performance and high accuracy,in the meantime,it would not change the modulation strategy and topology of the converter.
基金Supported by the National Key Research and Development Program of China(2016YFB0100600).
文摘The aim of this study is to achieve online monitoring of the junction temperature of double-sided-cooling insulated gate bipolar transistor(IGBT)power modules by using the on-state voltage under a high current to maximize the utilization of IGBT power chips.Online junction temperature measurement plays an important role in improving the reliability of the inverter with IGBT,increasing the power density of the motor controller of electric vehicles,and reducing the cost of electric vehicles.
基金Supported by the National Natural Science Foundation of China (52177199).
文摘By integrating a temperature-adaptive function, an active gate driver (AGD) enhances the switching performance of silicon carbide (SiC) MOSFETs under varying temperature conditions. However, the lack of analytical expressions describing the coupling between AGD parameters and temperature variation limits the broader application of this method, particularly in SiC modules that exhibit complicated device transient behaviors. To address this challenge, a mathematical model of the transient behavior of an SiC module is developed to investigate the relationship among AGD parameters, junction temperature, and switching performance. The analysis reveals that the impact of temperature on switching performance is directly linked to the duration of each gate resistance. Accordingly, a temperature-adaptive AGD for SiC MOSFET modules is proposed. Online junction temperature monitoring is achieved using turn-on delay detection, and the duration of each gate’s driving resistance is dynamically adjusted. The proposed temperature-adaptive AGD is validated experimentally using a commercial 1.2 kV/560 A SiC MOSFET at 600 V/200 A. Experimental results across a temperature range of 20 ℃ to 100 ℃ demonstrate that electrical stress variation remains within 15%, while loss variation does not exceed 10%.
基金Supported in part by the National Key R&D Program of China(2021YFB2500600)in part by a CAS Youth Multidisciplinary Project(JCTD-2021-09)in part by the Strategic Piority Research Program of Chinese Academy of Sciences(XDA28040100)。
文摘The hybrid structure of a power-module package is summarized and classified.Basic and extended planar wire-bond designs are analyzed and compared with regular wire-bond modules and planar modules,respectively.The automatic layout method can improve the electrical and thermal performance of hybrid structures.A state-of-the-art hybrid structure is introduced,and suggestions for alleviating the current and temperature imbalances for future designs are provided.
基金Supported by the National Key Research and Development Program of China(2016YFB0100600).
文摘In this paper,an offline evaluation method for the cooling capability of three-phase insulated-gate bipolar transistor(IGBT)inverters is presented,which can better emulate real working conditions.With a properly designed sudden-stop control sequence,the conventional junction temperature monitoring method at a low current is used to calculate the junction temperature before the sudden stop of an inverter.This can solve the challenging switching loss calculation issue in conventional methods.Finally,the feasibility,control sequence,and electrical behaviors of the proposed method are validated through experimental tests.
