The 4H-SiC junction barrier Schottky （JBS） diodes terminated by field guard rings and offset field plate are designed, fabricated and characterized. It is shown experimentally that a 3-μm P-type implantation window...The 4H-SiC junction barrier Schottky （JBS） diodes terminated by field guard rings and offset field plate are designed, fabricated and characterized. It is shown experimentally that a 3-μm P-type implantation window spacing gives an optimum trade-off between forward drop voltage and leakage current density for these diodes, yielding a specific on-resistance of 8.3 mΩ-cm2. A JBS diode with a turn-on voltage of 0.65 V and a reverse current density less than 1 A/cm2 under 500 V is fabricated, and the reverse recovery time is tested to be 80 ns, and the peak reverse current is 28.1 mA. Temperature-dependent characteristics are also studied in a temperature range of 75 °C-200 °C. The diode shows a stable Schottky barrier height of up to 200°C and a stable operation under a continuous forward current of 100 A/cm2.展开更多
The tunnel-recombination junction(TRJ) and optical absorption properties of a-Si:H/a-Si Ge:H double-junction solar cell were calculated by means of one dimensional simulator named AMPS-1D at the radiation of AM1.5G wi...The tunnel-recombination junction(TRJ) and optical absorption properties of a-Si:H/a-Si Ge:H double-junction solar cell were calculated by means of one dimensional simulator named AMPS-1D at the radiation of AM1.5G with a power density of 100 m W/cm2. Since the TRJ is the core component of the tandem solar cell, the optical absorption of the sub-cells and the electronic transport properties at the interface of the sub-cells are affected by the thickness and doping concentration of the TRJ. As a result, the TRJ parameters were optimized. The numerical results indicate that the maximum conversion efficiency(Eff) of 9.862% can be obtained when the thickness and doping concentration of the TRJ are 10 nm and 5*1019 cm–3, respectively. Based on the analysis of the contour map of short circuit current density, the optimal current matching can be achieved for 130 nm-thick top i-layer and 250 nm-thick bottom i-layer. In addition, four kinds of TRJ structures were also simulated for the comparison purpose. According to the calculated resistivity and band structures of the four TRJs, the efficiency of the solar cell with n-type μc-Si:H layer and p-type a-Si:H layer in TRJ structure is greater than that with other TRJ structures. It is assumed that the effect of the band offset that results in the formation of triangular barrier and backscattering behavior at the edge of the TRJ could be responsible to this phenomenon.展开更多
基金supported by the National Natural Science Foundation of China(Grant No.61006060)the 13115 Innovation Engineering of Shaanxi Province,China(Grant No.2008ZDKG-30)
文摘The 4H-SiC junction barrier Schottky （JBS） diodes terminated by field guard rings and offset field plate are designed, fabricated and characterized. It is shown experimentally that a 3-μm P-type implantation window spacing gives an optimum trade-off between forward drop voltage and leakage current density for these diodes, yielding a specific on-resistance of 8.3 mΩ-cm2. A JBS diode with a turn-on voltage of 0.65 V and a reverse current density less than 1 A/cm2 under 500 V is fabricated, and the reverse recovery time is tested to be 80 ns, and the peak reverse current is 28.1 mA. Temperature-dependent characteristics are also studied in a temperature range of 75 °C-200 °C. The diode shows a stable Schottky barrier height of up to 200°C and a stable operation under a continuous forward current of 100 A/cm2.
基金financially supported by the National Science Foundation of China (No. 11274266)the Key Project of Applied Basic Research Project of Yunnan Province of China (No. 2013FA029)the Open Project of National Laboratory for Infrared Physics (No. M201405)
文摘The tunnel-recombination junction(TRJ) and optical absorption properties of a-Si:H/a-Si Ge:H double-junction solar cell were calculated by means of one dimensional simulator named AMPS-1D at the radiation of AM1.5G with a power density of 100 m W/cm2. Since the TRJ is the core component of the tandem solar cell, the optical absorption of the sub-cells and the electronic transport properties at the interface of the sub-cells are affected by the thickness and doping concentration of the TRJ. As a result, the TRJ parameters were optimized. The numerical results indicate that the maximum conversion efficiency(Eff) of 9.862% can be obtained when the thickness and doping concentration of the TRJ are 10 nm and 5*1019 cm–3, respectively. Based on the analysis of the contour map of short circuit current density, the optimal current matching can be achieved for 130 nm-thick top i-layer and 250 nm-thick bottom i-layer. In addition, four kinds of TRJ structures were also simulated for the comparison purpose. According to the calculated resistivity and band structures of the four TRJs, the efficiency of the solar cell with n-type μc-Si:H layer and p-type a-Si:H layer in TRJ structure is greater than that with other TRJ structures. It is assumed that the effect of the band offset that results in the formation of triangular barrier and backscattering behavior at the edge of the TRJ could be responsible to this phenomenon.
