A new bipolar junction field-effect transistor (BJFET) was described. The theoretical analysis and computer simulation of BJFET obstructive characteristic are achieved. The gate bias voltage affects the BJFET obstruct...A new bipolar junction field-effect transistor (BJFET) was described. The theoretical analysis and computer simulation of BJFET obstructive characteristic are achieved. The gate bias voltage affects the BJFET obstructive voltage greatly. The BJFET obstructive characteristic is relevant to structure parameters of channel width W and channel length L. The decrease-bias-voltage operation can weaken the device obstructive characteristic. The forward turn in device forward obstructive region can also affect the BJFET obstructive characteristic. BJFET has a good high temperature obstructive characteristic and can be applying to high temperature status as high voltage switch devices.展开更多
With Shockley＇s approximate-channel theory and TCAD tools, a high-voltage, ultra-shallow junction PJFET for the input stage of an integrated operational amplifier （OPA） was realized. The high-performance PJFET devi...With Shockley＇s approximate-channel theory and TCAD tools, a high-voltage, ultra-shallow junction PJFET for the input stage of an integrated operational amplifier （OPA） was realized. The high-performance PJFET device was developed in the Bi-FET process technology. The measured specifications are as follows. The top-gate junction depth is about 0.1 μm, the gate-leakage current is less than 5 pA, the breakdown voltage is more than 80 V, and the pinch-off voltage is optional between 0.8 and 2.0 V. The device and its Bi-FET process technology were used to design and process a high input-impedance integrated OPA. The measured results show that the OPA has a bias current of less than 50 pA, voltage noise of less than 50 nV/Hz^1/2, and current noise of less than 0.05 pA/Hz^1/2.展开更多
文摘A new bipolar junction field-effect transistor (BJFET) was described. The theoretical analysis and computer simulation of BJFET obstructive characteristic are achieved. The gate bias voltage affects the BJFET obstructive voltage greatly. The BJFET obstructive characteristic is relevant to structure parameters of channel width W and channel length L. The decrease-bias-voltage operation can weaken the device obstructive characteristic. The forward turn in device forward obstructive region can also affect the BJFET obstructive characteristic. BJFET has a good high temperature obstructive characteristic and can be applying to high temperature status as high voltage switch devices.
基金supported by the Innovative Fund of the China Electronics Technology Group Corporation(CETC)(No.GJ0708020).
文摘With Shockley＇s approximate-channel theory and TCAD tools, a high-voltage, ultra-shallow junction PJFET for the input stage of an integrated operational amplifier （OPA） was realized. The high-performance PJFET device was developed in the Bi-FET process technology. The measured specifications are as follows. The top-gate junction depth is about 0.1 μm, the gate-leakage current is less than 5 pA, the breakdown voltage is more than 80 V, and the pinch-off voltage is optional between 0.8 and 2.0 V. The device and its Bi-FET process technology were used to design and process a high input-impedance integrated OPA. The measured results show that the OPA has a bias current of less than 50 pA, voltage noise of less than 50 nV/Hz^1/2, and current noise of less than 0.05 pA/Hz^1/2.
