The transitions of E0 ,E0 ＋A0, and E＋ in dilute GaAs（1-x） Nx alloys with x = 0.10% ,0.22% ,0.36% ,and 0.62% are observed by micro-photoluminescence. Resonant Raman scattering results further confirm that they are ...The transitions of E0 ,E0 ＋A0, and E＋ in dilute GaAs（1-x） Nx alloys with x = 0.10% ,0.22% ,0.36% ,and 0.62% are observed by micro-photoluminescence. Resonant Raman scattering results further confirm that they are from the intrinsic emissions in the studied dilute GaAsN alloys rather than some localized exciton emissions in the GaAsN alloys. The results show that the nitrogen-induced E E＋ and E0 ＋ A0 transitions in GaAsN alloys intersect at a nitrogen content of about 0.16%. It is demonstrated that a small amount of isoelectronic doping combined with micro-photoluminescence allows direct observation of above band gap transitions that are not usually accessible in photoluminescence.展开更多
Due to the limitations of traditional silicon-based semiconductors at the nanoscale,such as short-channel effects and quantum effects,two-dimensional(2D)transition metal dichalcogenides(TMDs)like MoS_(2) and MoTe_(2) ...Due to the limitations of traditional silicon-based semiconductors at the nanoscale,such as short-channel effects and quantum effects,two-dimensional(2D)transition metal dichalcogenides(TMDs)like MoS_(2) and MoTe_(2) are increasingly recognized for their remarkable characteristics.These materials exhibit unique properties,including tunable bandgaps and the ability to mitigate electron scattering.The metal-insulator transition(MIT),a special electrical property found in some 2D materials,holds great potential for various applications.The MIT in TMDs can be induced through external parameters,but challenges like charge inhomogeneity and the detrimental effects of ionic liquid gating complicate device fabrication and measurement.In this work,we report the MIT behavior in an isoelectronic doped transition metal dichalcogenide MoS_(2(1-x))Se2_(x).By studying the dependence of conductivity on temperature in MoS_(2(1-x))Se_(2)x field-effect transistors employing a single back-gate device structure,we observe clear evidence of the metal-insulator transition in the electron carriers.More importantly,we demonstrate that this MIT behavior can be replicated in other 2D material systems that lack such properties by heterostructure engineering.Our research lays the foundation for further enhancing the performance of 2D materials and may lead to broader applications in functional electronic devices.展开更多
文摘The transitions of E0 ,E0 ＋A0, and E＋ in dilute GaAs（1-x） Nx alloys with x = 0.10% ,0.22% ,0.36% ,and 0.62% are observed by micro-photoluminescence. Resonant Raman scattering results further confirm that they are from the intrinsic emissions in the studied dilute GaAsN alloys rather than some localized exciton emissions in the GaAsN alloys. The results show that the nitrogen-induced E E＋ and E0 ＋ A0 transitions in GaAsN alloys intersect at a nitrogen content of about 0.16%. It is demonstrated that a small amount of isoelectronic doping combined with micro-photoluminescence allows direct observation of above band gap transitions that are not usually accessible in photoluminescence.
基金supported by the National Natural Science Foundation of China(Nos.92464303,U23A20364,and 62274121)the Open Research Fund of Suzhou Laboratory(No.SZLAB-1508-2024-ZD014)the Wuhan Industrial Innovation Joint Laboratory(No.2024050902040443).
文摘Due to the limitations of traditional silicon-based semiconductors at the nanoscale,such as short-channel effects and quantum effects,two-dimensional(2D)transition metal dichalcogenides(TMDs)like MoS_(2) and MoTe_(2) are increasingly recognized for their remarkable characteristics.These materials exhibit unique properties,including tunable bandgaps and the ability to mitigate electron scattering.The metal-insulator transition(MIT),a special electrical property found in some 2D materials,holds great potential for various applications.The MIT in TMDs can be induced through external parameters,but challenges like charge inhomogeneity and the detrimental effects of ionic liquid gating complicate device fabrication and measurement.In this work,we report the MIT behavior in an isoelectronic doped transition metal dichalcogenide MoS_(2(1-x))Se2_(x).By studying the dependence of conductivity on temperature in MoS_(2(1-x))Se_(2)x field-effect transistors employing a single back-gate device structure,we observe clear evidence of the metal-insulator transition in the electron carriers.More importantly,we demonstrate that this MIT behavior can be replicated in other 2D material systems that lack such properties by heterostructure engineering.Our research lays the foundation for further enhancing the performance of 2D materials and may lead to broader applications in functional electronic devices.
