Argon and xenon are both attractive working gas for low voltage ionization chamber(LVIC),which is a promising candidate for ITER X-ray detectors.In this work,the performances of Arfilling LVIC(Ar-LVIC)and Xe-filling L...Argon and xenon are both attractive working gas for low voltage ionization chamber(LVIC),which is a promising candidate for ITER X-ray detectors.In this work,the performances of Arfilling LVIC(Ar-LVIC)and Xe-filling LVIC(Xe-LVIC)as well as the impacts of operation parameters were investigated.Saturation curves of Ar-LVIC and Xe-LVIC with pressure from 0.4 to 1.2 bar were measured with a tungsten X-ray source.The minimum voltage of saturation region(V_(min))of Ar-LVIC and Xe-LVIC,the relationship between V_(min)and saturation current,the ideal operating voltage in ITER and impacts of pressure on saturation current were studied.It was found that Ar-LVIC had smaller V_(min)and saturation currents which decreased with the drop of pressure from 1.2 to 0.4 bar;Xe-LVIC had larger V_(min)and saturation currents which did not obviously decrease with the same pressure drop.It is envisaged that ITER can take advantage of the larger saturation current and lower pressure of Xe-LVIC in the non-nuclear operation phase,and flexibility of pressure and low sensitivity to neutron/gamma radiation of Ar-LVIC in the nuclear operation phase.展开更多
A mini-type of plasma source was studied experimentally. The results showed that the plasma density, which was generated by an atmospheric non-equilibrium plasma source, rises with the increase in driving electric-fie...A mini-type of plasma source was studied experimentally. The results showed that the plasma density, which was generated by an atmospheric non-equilibrium plasma source, rises with the increase in driving electric-field and the momentum of gas particles. For a driving electricfield of 56 kV/cm and a gas particles＇ momentum of 10^9 × 10^-22 g·m/s, the ion density can exceed 10^10/cm^3 while the effective volume of the plasma source is only 2.5 cm^2. This study may help develop a method to generate a minitype plasma source with low energy consumption but high ion concentration. This source can be used in chemical industry, environmental engineering and military applications.展开更多
This work aims to determine the characteristic PN junction diode, subject to a reverse polarization, while I （breakdown voltage） of the inverse current in a GaAs specifying the parameters that influence the breakdow...This work aims to determine the characteristic PN junction diode, subject to a reverse polarization, while I （breakdown voltage） of the inverse current in a GaAs specifying the parameters that influence the breakdown voltage of the diode. In this work, we simulated the behavior of the ionization phenomenon by impact breakdown by avalanche of the PN junctions, subject to an inverse polarization. We will take into account both the trapping model in a stationary regime in the P＋N structure using like material of basis the Ⅲ-Ⅴ compounds and mainly the GaAs semi-insulating in which the deep centers have in important densities. We are talking about the model of trapping in the space charge region （SCR） and that is the trap density donor and acceptor states. The carrier crossing the space charge region （SCR） of W thickness creates N electron-hole pairs： for every created pair, the electron and the hole are swept quickly by the electric field, each in an opposite direction, which comes back, according to an already accepted reasoning, to the crossing of the space charge region （SCR） by an electron or a hole. So the even N pair created by the initial particle provoke N2 ionizations and so forth. The study of the physical and electrical behaviour of semiconductors is based on the influence of the presence of deep centers on the characteristic I（V） current-tension, which requires the calculation of the electrostatic potential, the electric field, the integral of ionization, the density of the states traps, the diffusion current of minority in the regions （1） and （3）, the current thermal generation in the region （2）, the leakage current in the surface, and the breakdown voltage.展开更多
基金National Natural Science Foundation of China(No.11605243)。
文摘Argon and xenon are both attractive working gas for low voltage ionization chamber(LVIC),which is a promising candidate for ITER X-ray detectors.In this work,the performances of Arfilling LVIC(Ar-LVIC)and Xe-filling LVIC(Xe-LVIC)as well as the impacts of operation parameters were investigated.Saturation curves of Ar-LVIC and Xe-LVIC with pressure from 0.4 to 1.2 bar were measured with a tungsten X-ray source.The minimum voltage of saturation region(V_(min))of Ar-LVIC and Xe-LVIC,the relationship between V_(min)and saturation current,the ideal operating voltage in ITER and impacts of pressure on saturation current were studied.It was found that Ar-LVIC had smaller V_(min)and saturation currents which decreased with the drop of pressure from 1.2 to 0.4 bar;Xe-LVIC had larger V_(min)and saturation currents which did not obviously decrease with the same pressure drop.It is envisaged that ITER can take advantage of the larger saturation current and lower pressure of Xe-LVIC in the non-nuclear operation phase,and flexibility of pressure and low sensitivity to neutron/gamma radiation of Ar-LVIC in the nuclear operation phase.
基金National High-tech Research & Development Plan(863 Projeet)(No.2008AA062317)National Natural Science Foundation of China(No.50578020)
文摘A mini-type of plasma source was studied experimentally. The results showed that the plasma density, which was generated by an atmospheric non-equilibrium plasma source, rises with the increase in driving electric-field and the momentum of gas particles. For a driving electricfield of 56 kV/cm and a gas particles＇ momentum of 10^9 × 10^-22 g·m/s, the ion density can exceed 10^10/cm^3 while the effective volume of the plasma source is only 2.5 cm^2. This study may help develop a method to generate a minitype plasma source with low energy consumption but high ion concentration. This source can be used in chemical industry, environmental engineering and military applications.
文摘This work aims to determine the characteristic PN junction diode, subject to a reverse polarization, while I （breakdown voltage） of the inverse current in a GaAs specifying the parameters that influence the breakdown voltage of the diode. In this work, we simulated the behavior of the ionization phenomenon by impact breakdown by avalanche of the PN junctions, subject to an inverse polarization. We will take into account both the trapping model in a stationary regime in the P＋N structure using like material of basis the Ⅲ-Ⅴ compounds and mainly the GaAs semi-insulating in which the deep centers have in important densities. We are talking about the model of trapping in the space charge region （SCR） and that is the trap density donor and acceptor states. The carrier crossing the space charge region （SCR） of W thickness creates N electron-hole pairs： for every created pair, the electron and the hole are swept quickly by the electric field, each in an opposite direction, which comes back, according to an already accepted reasoning, to the crossing of the space charge region （SCR） by an electron or a hole. So the even N pair created by the initial particle provoke N2 ionizations and so forth. The study of the physical and electrical behaviour of semiconductors is based on the influence of the presence of deep centers on the characteristic I（V） current-tension, which requires the calculation of the electrostatic potential, the electric field, the integral of ionization, the density of the states traps, the diffusion current of minority in the regions （1） and （3）, the current thermal generation in the region （2）, the leakage current in the surface, and the breakdown voltage.
