The mechanism of ionization and fragmentation for terphenyl (diphenylbenzene) with three structural ring isomers (ortho-, meta- and para-), and stilbene (1,2-diphenylethylene) with two geometrical isomers (trans- and ...The mechanism of ionization and fragmentation for terphenyl (diphenylbenzene) with three structural ring isomers (ortho-, meta- and para-), and stilbene (1,2-diphenylethylene) with two geometrical isomers (trans- and cis-) by EI mass spectrometry and ionization efficiency curves are investigation.展开更多
Diamond is known as the ultimate semiconductor owing to its excellent physical properties.However,the high difficulty of n-type doping and the poor electrical performance of n-type diamonds remain major challenges for...Diamond is known as the ultimate semiconductor owing to its excellent physical properties.However,the high difficulty of n-type doping and the poor electrical performance of n-type diamonds remain major challenges for the application of diamond semiconductor materials.In this paper,a high-pressure thermal diffusion method for the n-type doping of diamond,which utilizes high pressure to reduce the volume difference between phosphorus atoms and carbon atoms,is reported for the first time.This method can achieve efficient doping and ionization of phosphorus atoms at the lattice sites of diamond.The prepared phosphorus-doped diamond exhibited the lowest resistivity(2Ωcm)and highest electron concentration(2.27×10^(18) cm^(-3))observed in any known phosphorus-doped diamond single crystal at room temperature(300 K).The high-pressure thermal diffusion method provides an effective approach for diamond n-type doping,which may play an important role in the design and preparation of future diamond-based semiconductor devices.展开更多
文摘The mechanism of ionization and fragmentation for terphenyl (diphenylbenzene) with three structural ring isomers (ortho-, meta- and para-), and stilbene (1,2-diphenylethylene) with two geometrical isomers (trans- and cis-) by EI mass spectrometry and ionization efficiency curves are investigation.
基金supported by the National Key Research and Development Program of China(2018YFA0305900 and 2023YFA1406200)。
文摘Diamond is known as the ultimate semiconductor owing to its excellent physical properties.However,the high difficulty of n-type doping and the poor electrical performance of n-type diamonds remain major challenges for the application of diamond semiconductor materials.In this paper,a high-pressure thermal diffusion method for the n-type doping of diamond,which utilizes high pressure to reduce the volume difference between phosphorus atoms and carbon atoms,is reported for the first time.This method can achieve efficient doping and ionization of phosphorus atoms at the lattice sites of diamond.The prepared phosphorus-doped diamond exhibited the lowest resistivity(2Ωcm)and highest electron concentration(2.27×10^(18) cm^(-3))observed in any known phosphorus-doped diamond single crystal at room temperature(300 K).The high-pressure thermal diffusion method provides an effective approach for diamond n-type doping,which may play an important role in the design and preparation of future diamond-based semiconductor devices.
