Developing high-efficiency and stable inverted CsPbI2Br perovskite solar cells is vitally urgent for their unique advantages of removing adverse dopants and compatible process with tandem cells in comparison with the ...Developing high-efficiency and stable inverted CsPbI2Br perovskite solar cells is vitally urgent for their unique advantages of removing adverse dopants and compatible process with tandem cells in comparison with the regular.However,relatively low opening circuit voltage(Voc)and limited moisture stability have lagged their progress far from the regular.Here,we propose an effective surface treatment strategy with high-temperature FABr treatment to address these issues.The induced ions exchange can not only adjust energy level,but also gift effective passivation.Meanwhile,the gradient distribution of FA+can accelerate the carriers transport to further suppress bulk recombination.Besides,the Br-rich surface and FA+substitution can isolate moisture erosions.As a result,the optimized devices show champion efficiency of 15.92%with Voc of 1.223 V.In addition,the tolerance of humidity and operation get significant promotion:maintaining 91.7%efficiency after aged at RH 20%ambient condition for 1300 h and 81.8%via maximum power point tracking at 45°C for 500 h in N2.Furthermore,the unpackaged devices realize the rare reported air operational stability and,respectively,remain almost efficiency(98.9%)after operated under RH 35%for 600 min and 91.2%under RH 50%for 300 min.展开更多
Support and maintenance of tunnel excavations during operation are critical to ensure the safety and stability of tunnels.This study proposes a specialized support technology for a railroad tunnel in western China,cha...Support and maintenance of tunnel excavations during operation are critical to ensure the safety and stability of tunnels.This study proposes a specialized support technology for a railroad tunnel in western China,characterized by substantial deformation and a limited inherent self-stabilizing capacity.The method involves the application of a foam concrete compressible layer at the inverted arch of the tunnel.The effectiveness of the foam concrete layer in mitigating the effect of the surrounding rock on the tunnel inverted arch structure is investigated by a combination of indoor tests and numerical simulations.The laboratory test results show that the train load has little effect on the compressive performance of the foamed concrete compressible layer,which indicates that the foamed concrete compressible layer can be applied in the tunnel invert.By analyzing the support effect of the established model,it is found that the foam concrete compressible layer can effectively absorb the deformation pressure generated by the surrounding rock and protect the secondary lining structure,when the compressible layer density is 500 kg/m^(3) and the thickness is set to 20 cm,the supporting effect is the best.展开更多
ZnO nanoparticles films were prepared via sol-gel process and incorporated into inverted organic photovoltaic devices with a structure of ITO/ZnO/P3HT：PCBM/MoO3/Ag, in which ZnO film served as an electron selective l...ZnO nanoparticles films were prepared via sol-gel process and incorporated into inverted organic photovoltaic devices with a structure of ITO/ZnO/P3HT：PCBM/MoO3/Ag, in which ZnO film served as an electron selective layer. The effects of annealing temperature of ZnO film on the device performance were investigated. When the annealing temperature was 300℃, a well-arranged ZnO thin film was obtained, and the optimized device had doubled short circuit current density （Jsc） and seven-fold higher power conversion efficiency （PCE） compared to the devices without ZnO film. This improvement could be attributed to the enlarged interfacial area of ZnO/active layer and better energy band matching which causes an efficient electron extraction and a decreased interface energy barrier. At particularly high annealing temperature, dramatically increased sheet resistance of indium tin oxide （ITO） was found to cause PCE deterioration. Our finding indicates that it is highly important to investigate both morphology and electrical effects for understanding and optimizing organic photovoltaic （OPV） performance.展开更多
In this paper,the anisotropic etching process of Si(100) wafers in tetramethyl ammonium hydroxide(TMAH) solution with isopropyl alcohol(IPA) is investigated in detail. An inverted trapezoidal pattern is developed. A s...In this paper,the anisotropic etching process of Si(100) wafers in tetramethyl ammonium hydroxide(TMAH) solution with isopropyl alcohol(IPA) is investigated in detail. An inverted trapezoidal pattern is developed. A series of experiments are performed by changing TMAH concentration,IPA concentration,etching temperature and etching time. The structure of inverted trapezoidal patterns and roughness of the bottom surface are characterized by scanning electron microscopy(SEM) and atomic force microscopy(AFM). The results show that with TMAH concentration increases,the roughness of bottom surface will decrease. The addition of IPA into TMAH solution improves the morphology of the bottom surface significantly. Low temperature is beneficial to get a smooth bottom surface. Furthermore,etching time can change the bottom surface roughness. A model is proposed to explain the etching processes. The hillock area ratio of the bottom surface has the same tendency as the etching area ratio. Finally,smooth silicon inverted trapezoidal patterns are obtained for epitaxial growth of Ga N-based light emitting diode(LED) devices.展开更多
Current installation costs of offshore wind turbines(OWTs) are high and profit margins in the offshore wind energy sector are low, it is thus necessary to develop installation methods that are more efficient and pract...Current installation costs of offshore wind turbines(OWTs) are high and profit margins in the offshore wind energy sector are low, it is thus necessary to develop installation methods that are more efficient and practical. This paper presents a numerical study(based on a global response analysis of marine operations) of a novel procedure for installing the tower and Rotor Nacelle Assemblies(RNAs) on bottom-fixed foundations of OWTs. The installation procedure is based on the inverted pendulum principle. A cargo barge is used to transport the OWT assembly in a horizontal position to the site, and a medium-size Heavy Lift Vessel(HLV) is then employed to lift and up-end the OWT assembly using a special upending frame. The main advantage of this novel procedure is that the need for a huge HLV(in terms of lifting height and capacity) is eliminated. This novel method requires that the cargo barge is in the leeward side of the HLV(which can be positioned with the best heading) during the entire installation. This is to benefit from shielding effects of the HLV on the motions of the cargo barge, so the foundations need to be installed with a specific heading based on wave direction statistics of the site and a typical installation season. Following a systematic approach based on numerical simulations of actual operations, potential critical installation activities, corresponding critical events, and limiting(response) parameters are identified. In addition, operational limits for some of the limiting parameters are established in terms of allowable limits of sea states. Following a preliminary assessment of these operational limits, the duration of the entire operation, the equipment used, and weather-and water depth-sensitivity, this novel procedure is demonstrated to be viable.展开更多
In this work,we report a novel octa-nuclear uranyl(U8)motif[(UO2)8O4(μ3-OH)2(μ2-OH)2]4+embedded in a uranyl-oxalate coordination polymer(compound 1)based on a U-shaped linker with extra-long xylylene chains for stab...In this work,we report a novel octa-nuclear uranyl(U8)motif[(UO2)8O4(μ3-OH)2(μ2-OH)2]4+embedded in a uranyl-oxalate coordination polymer(compound 1)based on a U-shaped linker with extra-long xylylene chains for stabilizing the resulting high-nuclear motif through additional cross-linking connectivity.A comparison with dimeric and monomeric uranyl compounds obtained at different pH value from the same hydrothermal system reveals that,solution pH plays a vital role in formation of this octa-nuclear uranyl motif by promoting hydrolysis of uranyl source.Since high similarity of eight uranium centers in this nearly planar U8 motif here,overlapping and broadening of signals in fluorescence,infra-red(IR)and Raman spectra can be found.展开更多
The variations of single event transient(SET)pulse width of high-LET heavy ion irradiation in 16-nm-thick bulk silicon fin field-effect transistor(Fin FET)inverter chains with different driven strengths are measured a...The variations of single event transient(SET)pulse width of high-LET heavy ion irradiation in 16-nm-thick bulk silicon fin field-effect transistor(Fin FET)inverter chains with different driven strengths are measured at different temperatures.Three-dimensional(3D)technology computer-aided design simulations are carried out to study the SET pulse width and saturation current varying with temperature.Experimental and simulation results indicate that the increase in temperature will enhance the parasitic bipolar effect of bulk Fin FET technology,resulting in the increase of SET pulse width.On the other hand,the increase of inverter driven strength will change the layout topology,which has a complex influence on the SET temperature effects of Fin FET inverter chains.The experimental and simulation results show that the device with the strongest driven strength has the least dependence on temperature.展开更多
Modeling and simulation of induction motor drive system to investigate and mitigate the adverse effects of PWM inverter based on analysis, modeling and simulation are presented. The estimation of conducted disturbance...Modeling and simulation of induction motor drive system to investigate and mitigate the adverse effects of PWM inverter based on analysis, modeling and simulation are presented. The estimation of conducted disturbances and other adverse effects of PWM inverter by simulation offer a considerable gain from the economic point of view. For an accurate model of the motor drive system including mains, rectifier, inverter, motor and its long cables, the high frequency parasitic current paths are taken into account. The novel model and its parasitic values for three-phase induction motor system are presented. Finally a new solution for suppressing EMI, common mode voltage, leakage current, bearing current and shaft voltages is proposed and the results show the excellent performances of proposed solution including active and passive filters.展开更多
The literature suggests inconsistent evidence regarding the influence of danger on prosocial behavior.We explore this issue through a nationwide survey of 8567 households in China during the COVID-19 Omicron variant o...The literature suggests inconsistent evidence regarding the influence of danger on prosocial behavior.We explore this issue through a nationwide survey of 8567 households in China during the COVID-19 Omicron variant outbreak in 2022.In a zero-COVID policy,China chose to quarantine all neighborhoods with viral infections.The almost random presence of infected cases provides an opportunity to examine the relationship between the proximity of danger(i.e.potential Omicron infection)and the prosocial behavior of residents in quarantine zones.For the first time,we find an inverted U-shape relationship:residents exhibit a stronger prosocial behavior when living closer to infected cases in the neighborhood,but this positive effect diminishes when they are too close to each other.Furthermore,such non-linear relationship is salient in residents’interpersonal helping but not in their cooperative behavior.Policymakers should be mindful of the different prosocial responses and target their efforts to help communities navigate quarantine periods more effectively.展开更多
Microelectronic magnetic sensors are essential in diverse applications,including automotive,industrial,and consumer electronics.Hall-effect devices hold the largest share of the magnetic sensor market,and they are par...Microelectronic magnetic sensors are essential in diverse applications,including automotive,industrial,and consumer electronics.Hall-effect devices hold the largest share of the magnetic sensor market,and they are particularly valued for their reliability,low cost and CMOS compatibility.This paper introduces a novel 3-axis Hall-effect sensor element based on an inverted pyramid structure,realized by leveraging MEMS micromachining and CMOS processing.The devices are manufactured by etching the pyramid openings with TMAH and implanting the sloped walls with n-dopants to define the active area.Through the use of various bias-sense detection modes,the device is able to detect both in-plane and out-of-plane magnetic fields within a single compact structure.In addition,the offset can be significantly reduced by one to three orders of magnitude by employing the current-spinning method.The device presented in this work demonstrated high in-plane and out-of-plane current-and voltage-related sensitivities ranging between 64.1 to 198 V A−1 T−1 and 14.8 to 21.4 mV V^(−1) T−1,with crosstalk below 4.7%.The sensor exhibits a thermal noise floor which corresponds to approximately 0:5μT/√Hz p at 1.31 V supply.This novel Hall-effect sensor represents a promising and simpler alternative to existing state-of-the-art 3-axis magnetic sensors,offering a viable solution for precise and reliable magnetic field sensing in various applications such as position feedback and power monitoring.展开更多
Metal oxide thin-films transistors(TFTs)produced from solution-based printing techniques can lead to large-area electronics with low cost.However,the performance of current printed devices is inferior to those from va...Metal oxide thin-films transistors(TFTs)produced from solution-based printing techniques can lead to large-area electronics with low cost.However,the performance of current printed devices is inferior to those from vacuum-based methods due to poor film uniformity induced by the“coffeering”effect.Here,we report a novel approach to print highperformance indium tin oxide(ITO)-based TFTs and logic inverters by taking advantage of such notorious effect.ITO has high electrical conductivity and is generally used as an electrode material.However,by reducing the film thickness down to nanometers scale,the carrier concentration of ITO can be effectively reduced to enable new applications as active channels in transistors.The ultrathin(~10-nm-thick)ITO film in the center of the coffee-ring worked as semiconducting channels,while the thick ITO ridges(>18-nm-thick)served as the contact electrodes.The fully inkjet-printed ITO TFTs exhibited a high saturation mobility of 34.9 cm2 V^(−1) s^(−1) and a low subthreshold swing of 105 mV dec^(−1).In addition,the devices exhibited excellent electrical stability under positive bias illumination stress(PBIS,ΔV_(th)=0.31 V)and negative bias illuminaiton stress(NBIS,ΔV_(th)=−0.29 V)after 10,000 s voltage bias tests.More remarkably,fully printed n-type metal–oxide–semiconductor(NMOS)inverter based on ITO TFTs exhibited an extremely high gain of 181 at a low-supply voltage of 3 V,promising for advanced electronics applications.展开更多
The investigation of two-dimensional(2D)materials has advanced into practical device applications,such as cascaded logic stages.However,incompatible electrical properties and inappropriate logic levels remain enormous...The investigation of two-dimensional(2D)materials has advanced into practical device applications,such as cascaded logic stages.However,incompatible electrical properties and inappropriate logic levels remain enormous challenges.In this work,a doping-free strategy is investigated by top gated(TG)MoS_(2) field-effect transistors(FETs)using various metal gates(Au,Cu,Ag,and Al).These metals with different work functions provide a convenient tuning knob for controlling threshold voltage(V_(th))for MoS_(2) FETs.For instance,the Al electrode can create an extra electron doping(n-doping)behavior in the MoS_(2) TG-FETs due to a dipole effect at the gate-dielectric interface.In this work,by achieving matched electrical properties for the load transistor and the driver transistor in an inverter circuit,we successfully demonstrate wafer-scale MoS_(2) inverter arrays with an optimized inverter switching threshold voltage(V_(M))of 1.5 V and a DC voltage gain of 27 at a supply voltage(V_(DD))of 3 V.This work offers a novel scheme for the fabrication of fully integrated multistage logic circuits based on wafer-scale MoS_(2) film.展开更多
When the induction motor is fed from the PWM VSI inverter, with and without torque enhancing function, the variations of the starting torque and the starting current versus the starting frequency are analyzed, base...When the induction motor is fed from the PWM VSI inverter, with and without torque enhancing function, the variations of the starting torque and the starting current versus the starting frequency are analyzed, based on the steady state equivalent circuit of the induction motor.The corresponding expressions are derived, and the corresponding curves are also drawn, from which the initial starting frequency range can be determined properly and easily. The initial starting frequency range is the common range, in which the starting torque should be high enough and the starting current low enough.Some other useful formulas are also derived.These results are significant for electrical drive designers to make the starting schemes. The effects of the increase of the stator and the rotor resistances on the starting torque and the initial starting frequency range are also discussed, which is caused by the skin effects of the high order harmonics present in the PWM inverter output voltage.展开更多
逆变器中死区时间会带来电流谐波和转矩脉动,从而导致感应电机出现明显振动并增加额外损耗。为减少逆变器死区效应带来的不利影响,提出一种基于高阶扩展状态观测器(high-order extended state observer,HO-ESO)的逆变器死区效应在线补...逆变器中死区时间会带来电流谐波和转矩脉动,从而导致感应电机出现明显振动并增加额外损耗。为减少逆变器死区效应带来的不利影响,提出一种基于高阶扩展状态观测器(high-order extended state observer,HO-ESO)的逆变器死区效应在线补偿方法。首先,对逆变器死区效应进行分析,推导出因死区效应而产生的d、q轴误差电压方程。接着,对传统的基于二阶ESO的死区效应补偿方法进行介绍和分析,由分析结果可知,该方法难以准确估计误差电压,从而导致补偿效果欠佳。进一步,设计一种HO-ESO对误差电压进行估计,并将其补偿到感应电机矢量控制系统中。最后,利用仿真和实验测试对所研究的死区效应补偿方法进行验证,并与传统的基于二阶ESO的死区效应补偿法进行对比。测试结果表明,相较于传统基于二阶ESO的死区效应补偿方法,所研究方法表现出更好的死区效应补偿性能。此外,所研究方法无需检测电流极性,易于实施。展开更多
基金The authors thank the financial supports by the National Natural Science Foundation of China(61974150 and 51773213)the Zhejiang Provincial Natural Science Foundation of China(LQ19E030008)+1 种基金the Key Research Program of Frontier Sciences,CAS(QYZDB-SSW-JSC047),the Zhejiang Province Science and Technology Plan(2018C01047)the Fundamental Research Funds for the Central Universities and the National Youth Top-notch Talent Support Program.
文摘Developing high-efficiency and stable inverted CsPbI2Br perovskite solar cells is vitally urgent for their unique advantages of removing adverse dopants and compatible process with tandem cells in comparison with the regular.However,relatively low opening circuit voltage(Voc)and limited moisture stability have lagged their progress far from the regular.Here,we propose an effective surface treatment strategy with high-temperature FABr treatment to address these issues.The induced ions exchange can not only adjust energy level,but also gift effective passivation.Meanwhile,the gradient distribution of FA+can accelerate the carriers transport to further suppress bulk recombination.Besides,the Br-rich surface and FA+substitution can isolate moisture erosions.As a result,the optimized devices show champion efficiency of 15.92%with Voc of 1.223 V.In addition,the tolerance of humidity and operation get significant promotion:maintaining 91.7%efficiency after aged at RH 20%ambient condition for 1300 h and 81.8%via maximum power point tracking at 45°C for 500 h in N2.Furthermore,the unpackaged devices realize the rare reported air operational stability and,respectively,remain almost efficiency(98.9%)after operated under RH 35%for 600 min and 91.2%under RH 50%for 300 min.
基金supported by the National Natural Science Foundation of China under grant number 52179113Open Research Fund of State Key Laboratory of Geomechanics and Geotechnical Engineering Safety Grant No.SKLGME 022022,SKLGME-JBGS2401.
文摘Support and maintenance of tunnel excavations during operation are critical to ensure the safety and stability of tunnels.This study proposes a specialized support technology for a railroad tunnel in western China,characterized by substantial deformation and a limited inherent self-stabilizing capacity.The method involves the application of a foam concrete compressible layer at the inverted arch of the tunnel.The effectiveness of the foam concrete layer in mitigating the effect of the surrounding rock on the tunnel inverted arch structure is investigated by a combination of indoor tests and numerical simulations.The laboratory test results show that the train load has little effect on the compressive performance of the foamed concrete compressible layer,which indicates that the foamed concrete compressible layer can be applied in the tunnel invert.By analyzing the support effect of the established model,it is found that the foam concrete compressible layer can effectively absorb the deformation pressure generated by the surrounding rock and protect the secondary lining structure,when the compressible layer density is 500 kg/m^(3) and the thickness is set to 20 cm,the supporting effect is the best.
基金financially supported by the National Natural Science Foundation of China(Nos.60876046 and 60976048)the Tianjin Natural Science Foundation(Nos.13JCYBJC18900,13JCZDJC26700 and 12JCQNJC01300)+1 种基金the Scientific Developing Foundation of Tianjin Education Commission(No.20100723)the Tianjin Key Discipline of Material Physicsand Chemistry
文摘ZnO nanoparticles films were prepared via sol-gel process and incorporated into inverted organic photovoltaic devices with a structure of ITO/ZnO/P3HT：PCBM/MoO3/Ag, in which ZnO film served as an electron selective layer. The effects of annealing temperature of ZnO film on the device performance were investigated. When the annealing temperature was 300℃, a well-arranged ZnO thin film was obtained, and the optimized device had doubled short circuit current density （Jsc） and seven-fold higher power conversion efficiency （PCE） compared to the devices without ZnO film. This improvement could be attributed to the enlarged interfacial area of ZnO/active layer and better energy band matching which causes an efficient electron extraction and a decreased interface energy barrier. At particularly high annealing temperature, dramatically increased sheet resistance of indium tin oxide （ITO） was found to cause PCE deterioration. Our finding indicates that it is highly important to investigate both morphology and electrical effects for understanding and optimizing organic photovoltaic （OPV） performance.
基金supported by the National Natural Science Foundation of China(Nos.51472229,61422405,51202238,61306051 and 61474109)the “100 Talent Program” of Chinese Academy of Sciencesthe Opening Funding of State Key Lab of Silicon Materials(No.SKL2014-4)
文摘In this paper,the anisotropic etching process of Si(100) wafers in tetramethyl ammonium hydroxide(TMAH) solution with isopropyl alcohol(IPA) is investigated in detail. An inverted trapezoidal pattern is developed. A series of experiments are performed by changing TMAH concentration,IPA concentration,etching temperature and etching time. The structure of inverted trapezoidal patterns and roughness of the bottom surface are characterized by scanning electron microscopy(SEM) and atomic force microscopy(AFM). The results show that with TMAH concentration increases,the roughness of bottom surface will decrease. The addition of IPA into TMAH solution improves the morphology of the bottom surface significantly. Low temperature is beneficial to get a smooth bottom surface. Furthermore,etching time can change the bottom surface roughness. A model is proposed to explain the etching processes. The hillock area ratio of the bottom surface has the same tendency as the etching area ratio. Finally,smooth silicon inverted trapezoidal patterns are obtained for epitaxial growth of Ga N-based light emitting diode(LED) devices.
基金financially supported by the Research Council of Norway granted through the Department of Marine Technologythe Centre for Ships and Ocean Structures(CeSOS) and the the Centre for Autonomous Marine Operations and Systems(AMOS) from the Norwegian University of Science and Technology(NTNU)the financial support from Escuela Politécnica Nacional(EPN)through the project PIMI-15-03"Investigación y evaluación de sistemas innovadores de propulsión distribuida con ingestión de capa límite para mejorar la eficiencia propulsiva y térmica de vehículos aéreos no tripulados aplicados en los sectores:agrícola,medicina y vigilancia"
文摘Current installation costs of offshore wind turbines(OWTs) are high and profit margins in the offshore wind energy sector are low, it is thus necessary to develop installation methods that are more efficient and practical. This paper presents a numerical study(based on a global response analysis of marine operations) of a novel procedure for installing the tower and Rotor Nacelle Assemblies(RNAs) on bottom-fixed foundations of OWTs. The installation procedure is based on the inverted pendulum principle. A cargo barge is used to transport the OWT assembly in a horizontal position to the site, and a medium-size Heavy Lift Vessel(HLV) is then employed to lift and up-end the OWT assembly using a special upending frame. The main advantage of this novel procedure is that the need for a huge HLV(in terms of lifting height and capacity) is eliminated. This novel method requires that the cargo barge is in the leeward side of the HLV(which can be positioned with the best heading) during the entire installation. This is to benefit from shielding effects of the HLV on the motions of the cargo barge, so the foundations need to be installed with a specific heading based on wave direction statistics of the site and a typical installation season. Following a systematic approach based on numerical simulations of actual operations, potential critical installation activities, corresponding critical events, and limiting(response) parameters are identified. In addition, operational limits for some of the limiting parameters are established in terms of allowable limits of sea states. Following a preliminary assessment of these operational limits, the duration of the entire operation, the equipment used, and weather-and water depth-sensitivity, this novel procedure is demonstrated to be viable.
基金National Natural Science Foundation of China(21671191,21577144,11405186)。
文摘In this work,we report a novel octa-nuclear uranyl(U8)motif[(UO2)8O4(μ3-OH)2(μ2-OH)2]4+embedded in a uranyl-oxalate coordination polymer(compound 1)based on a U-shaped linker with extra-long xylylene chains for stabilizing the resulting high-nuclear motif through additional cross-linking connectivity.A comparison with dimeric and monomeric uranyl compounds obtained at different pH value from the same hydrothermal system reveals that,solution pH plays a vital role in formation of this octa-nuclear uranyl motif by promoting hydrolysis of uranyl source.Since high similarity of eight uranium centers in this nearly planar U8 motif here,overlapping and broadening of signals in fluorescence,infra-red(IR)and Raman spectra can be found.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.12035019,12105339,and62174180)the Opening Special Foundation of State Key Laboratory of Intense Pulsed Radiation Simulation and Effect,China(Grant No.SKLIPR2113)。
文摘The variations of single event transient(SET)pulse width of high-LET heavy ion irradiation in 16-nm-thick bulk silicon fin field-effect transistor(Fin FET)inverter chains with different driven strengths are measured at different temperatures.Three-dimensional(3D)technology computer-aided design simulations are carried out to study the SET pulse width and saturation current varying with temperature.Experimental and simulation results indicate that the increase in temperature will enhance the parasitic bipolar effect of bulk Fin FET technology,resulting in the increase of SET pulse width.On the other hand,the increase of inverter driven strength will change the layout topology,which has a complex influence on the SET temperature effects of Fin FET inverter chains.The experimental and simulation results show that the device with the strongest driven strength has the least dependence on temperature.
基金Sponsored by the National Natural Science Foundation of China(Grant No.50477009).
文摘Modeling and simulation of induction motor drive system to investigate and mitigate the adverse effects of PWM inverter based on analysis, modeling and simulation are presented. The estimation of conducted disturbances and other adverse effects of PWM inverter by simulation offer a considerable gain from the economic point of view. For an accurate model of the motor drive system including mains, rectifier, inverter, motor and its long cables, the high frequency parasitic current paths are taken into account. The novel model and its parasitic values for three-phase induction motor system are presented. Finally a new solution for suppressing EMI, common mode voltage, leakage current, bearing current and shaft voltages is proposed and the results show the excellent performances of proposed solution including active and passive filters.
基金supported in part by the National Natural Science Foundation of China(72033003,12071088,91846302 and 71973107).
文摘The literature suggests inconsistent evidence regarding the influence of danger on prosocial behavior.We explore this issue through a nationwide survey of 8567 households in China during the COVID-19 Omicron variant outbreak in 2022.In a zero-COVID policy,China chose to quarantine all neighborhoods with viral infections.The almost random presence of infected cases provides an opportunity to examine the relationship between the proximity of danger(i.e.potential Omicron infection)and the prosocial behavior of residents in quarantine zones.For the first time,we find an inverted U-shape relationship:residents exhibit a stronger prosocial behavior when living closer to infected cases in the neighborhood,but this positive effect diminishes when they are too close to each other.Furthermore,such non-linear relationship is salient in residents’interpersonal helping but not in their cooperative behavior.Policymakers should be mindful of the different prosocial responses and target their efforts to help communities navigate quarantine periods more effectively.
文摘Microelectronic magnetic sensors are essential in diverse applications,including automotive,industrial,and consumer electronics.Hall-effect devices hold the largest share of the magnetic sensor market,and they are particularly valued for their reliability,low cost and CMOS compatibility.This paper introduces a novel 3-axis Hall-effect sensor element based on an inverted pyramid structure,realized by leveraging MEMS micromachining and CMOS processing.The devices are manufactured by etching the pyramid openings with TMAH and implanting the sloped walls with n-dopants to define the active area.Through the use of various bias-sense detection modes,the device is able to detect both in-plane and out-of-plane magnetic fields within a single compact structure.In addition,the offset can be significantly reduced by one to three orders of magnitude by employing the current-spinning method.The device presented in this work demonstrated high in-plane and out-of-plane current-and voltage-related sensitivities ranging between 64.1 to 198 V A−1 T−1 and 14.8 to 21.4 mV V^(−1) T−1,with crosstalk below 4.7%.The sensor exhibits a thermal noise floor which corresponds to approximately 0:5μT/√Hz p at 1.31 V supply.This novel Hall-effect sensor represents a promising and simpler alternative to existing state-of-the-art 3-axis magnetic sensors,offering a viable solution for precise and reliable magnetic field sensing in various applications such as position feedback and power monitoring.
基金This research was financially supported under the Westlake Multidisciplinary Research Initiative Center(MRIC)Seed Fund(Grant No.MRIC20200101).
文摘Metal oxide thin-films transistors(TFTs)produced from solution-based printing techniques can lead to large-area electronics with low cost.However,the performance of current printed devices is inferior to those from vacuum-based methods due to poor film uniformity induced by the“coffeering”effect.Here,we report a novel approach to print highperformance indium tin oxide(ITO)-based TFTs and logic inverters by taking advantage of such notorious effect.ITO has high electrical conductivity and is generally used as an electrode material.However,by reducing the film thickness down to nanometers scale,the carrier concentration of ITO can be effectively reduced to enable new applications as active channels in transistors.The ultrathin(~10-nm-thick)ITO film in the center of the coffee-ring worked as semiconducting channels,while the thick ITO ridges(>18-nm-thick)served as the contact electrodes.The fully inkjet-printed ITO TFTs exhibited a high saturation mobility of 34.9 cm2 V^(−1) s^(−1) and a low subthreshold swing of 105 mV dec^(−1).In addition,the devices exhibited excellent electrical stability under positive bias illumination stress(PBIS,ΔV_(th)=0.31 V)and negative bias illuminaiton stress(NBIS,ΔV_(th)=−0.29 V)after 10,000 s voltage bias tests.More remarkably,fully printed n-type metal–oxide–semiconductor(NMOS)inverter based on ITO TFTs exhibited an extremely high gain of 181 at a low-supply voltage of 3 V,promising for advanced electronics applications.
基金supported by the National Key Research and Development Program (No.2016YFA0203900)Innovation Program of Shanghai Municipal Education Commission (No.2021–01–07–00–07-E00077)+1 种基金Shanghai Municipal Science and Technology Commission (No.21DZ1100900)National Natural Science Foundation of China (Nos.51802041,61904032,and 61874154)。
文摘The investigation of two-dimensional(2D)materials has advanced into practical device applications,such as cascaded logic stages.However,incompatible electrical properties and inappropriate logic levels remain enormous challenges.In this work,a doping-free strategy is investigated by top gated(TG)MoS_(2) field-effect transistors(FETs)using various metal gates(Au,Cu,Ag,and Al).These metals with different work functions provide a convenient tuning knob for controlling threshold voltage(V_(th))for MoS_(2) FETs.For instance,the Al electrode can create an extra electron doping(n-doping)behavior in the MoS_(2) TG-FETs due to a dipole effect at the gate-dielectric interface.In this work,by achieving matched electrical properties for the load transistor and the driver transistor in an inverter circuit,we successfully demonstrate wafer-scale MoS_(2) inverter arrays with an optimized inverter switching threshold voltage(V_(M))of 1.5 V and a DC voltage gain of 27 at a supply voltage(V_(DD))of 3 V.This work offers a novel scheme for the fabrication of fully integrated multistage logic circuits based on wafer-scale MoS_(2) film.
文摘When the induction motor is fed from the PWM VSI inverter, with and without torque enhancing function, the variations of the starting torque and the starting current versus the starting frequency are analyzed, based on the steady state equivalent circuit of the induction motor.The corresponding expressions are derived, and the corresponding curves are also drawn, from which the initial starting frequency range can be determined properly and easily. The initial starting frequency range is the common range, in which the starting torque should be high enough and the starting current low enough.Some other useful formulas are also derived.These results are significant for electrical drive designers to make the starting schemes. The effects of the increase of the stator and the rotor resistances on the starting torque and the initial starting frequency range are also discussed, which is caused by the skin effects of the high order harmonics present in the PWM inverter output voltage.
文摘逆变器中死区时间会带来电流谐波和转矩脉动,从而导致感应电机出现明显振动并增加额外损耗。为减少逆变器死区效应带来的不利影响,提出一种基于高阶扩展状态观测器(high-order extended state observer,HO-ESO)的逆变器死区效应在线补偿方法。首先,对逆变器死区效应进行分析,推导出因死区效应而产生的d、q轴误差电压方程。接着,对传统的基于二阶ESO的死区效应补偿方法进行介绍和分析,由分析结果可知,该方法难以准确估计误差电压,从而导致补偿效果欠佳。进一步,设计一种HO-ESO对误差电压进行估计,并将其补偿到感应电机矢量控制系统中。最后,利用仿真和实验测试对所研究的死区效应补偿方法进行验证,并与传统的基于二阶ESO的死区效应补偿法进行对比。测试结果表明,相较于传统基于二阶ESO的死区效应补偿方法,所研究方法表现出更好的死区效应补偿性能。此外,所研究方法无需检测电流极性,易于实施。
