The function of solid electrolytes and the composition of solid electrolyte interphase(SEI)are highly significant for inhibiting the growth of Li dendrites.Herein,we report an in-situ interfacial passivation combined ...The function of solid electrolytes and the composition of solid electrolyte interphase(SEI)are highly significant for inhibiting the growth of Li dendrites.Herein,we report an in-situ interfacial passivation combined with self-adaptability strategy to reinforce Li_(0.33)La_(0.557)TiO_(3)(LLTO)-based solid-state batteries.Specifically,a functional SEI enriched with LiF/Li_(3)PO_(4) is formed by in-situ electrochemical conversion,which is greatly beneficial to improving interface compatibility and enhancing ion transport.While the polarized dielectric BaTiO_(3)-polyamic acid(BTO-PAA,BP)film greatly improves the Li-ion transport kinetics and homogenizes the Li deposition.As expected,the resulting electrolyte offers considerable ionic conductivity at room temperature(4.3 x 10~(-4)S cm^(-1))and appreciable electrochemical decomposition voltage(5.23 V)after electrochemical passivation.For Li-LiFePO_(4) batteries,it shows a high specific capacity of 153 mA h g^(-1)at 0.2C after 100 cycles and a long-term durability of 115 mA h g^(-1)at 1.0 C after 800 cycles.Additionally,a stable Li plating/stripping can be achieved for more than 900 h at 0.5 mA cm^(-2).The stabilization mechanisms are elucidated by ex-situ XRD,ex-situ XPS,and ex-situ FTIR techniques,and the corresponding results reveal that the interfacial passivation combined with polarization effect is an effective strategy for improving the electrochemical performance.The present study provides a deeper insight into the dynamic adjustment of electrode-electrolyte interfacial for solid-state lithium batteries.展开更多
Here,we report a mixed GAI and MAI(MGM)treatment method by forming a 2D alternating-cation-interlayer(ACI)phase(n=2)perovskite layer on the 3D perovskite,modulating the bulk and interfacial defects in the perovskite f...Here,we report a mixed GAI and MAI(MGM)treatment method by forming a 2D alternating-cation-interlayer(ACI)phase(n=2)perovskite layer on the 3D perovskite,modulating the bulk and interfacial defects in the perovskite films simultaneously,leading to the suppressed nonradiative recombination,longer lifetime,higher mobility,and reduced trap density.Consequently,the devices’performance is enhanced to 24.5%and 18.7%for 0.12 and 64 cm^(2),respectively.In addition,the MGM treatment can be applied to a wide range of perovskite compositions,including MA-,FA-,MAFA-,and CsFAMA-based lead halide perovskites,making it a general method for preparing efficient perovskite solar cells.Without encapsulation,the treated devices show improved stabilities.展开更多
The Ge metal-oxide-semiconductor (MOS) capacitors were fabricated with HfO2 as gate dielectric.AlON,NdON,and NdAlON were deposited between the gate dielectric and the Ge substrate as the interfacial passivation layer ...The Ge metal-oxide-semiconductor (MOS) capacitors were fabricated with HfO2 as gate dielectric.AlON,NdON,and NdAlON were deposited between the gate dielectric and the Ge substrate as the interfacial passivation layer (IPL).The electrical properties (such as capacitance-voltage (C-V) and gate leakage current density versus gate voltage (J_(g)-V_(g))) were measured by HP4284A precision LCR meter and HP4156A semiconductor parameter analyzer.The chemical states and interfacial quality of the high-k/Ge interface were investigated by X-ray photoelectron spectroscopy (XPS).The experimental results show that the sample with the NdAlON as IPL exhibits the excellent interfacial and electrical properties.These should be attributed to an effective suppression of the Ge suboxide and HfGeOx interlayer,and an enhanced blocking role against inter-diffusion of the elements during annealing by the NdAlON IPL.展开更多
Defect-induced charge carrier recombination at the interfaces between perovskite and adjacent charge transport layers restricts further improvements in the device performance of perovskite solar cells(PSCs).Defect pas...Defect-induced charge carrier recombination at the interfaces between perovskite and adjacent charge transport layers restricts further improvements in the device performance of perovskite solar cells(PSCs).Defect passivation at these interfaces can reduce trap states and inhibit the induced nonradiative recombination.Herein,we report a double-sided interfacial passivation via simply evaporating potassium chloride(DIP-KCl)at both the hole transport layer(HTL)/perovskite and perovskite/electron transport layer(ETL)interfaces in inverted planar PSCs.We demonstrate that the bottom KCl layer at the HTL/perovskite interface not only reduces the interfacial defects and improves the interfacial contact,but also leads to increased perovskite crystallinity,while the top KCl layer at the perovskite/ETL interface efficiently passivates the perovskite top surface defects and facilitates electron extraction at this interface.Thus,suppressed nonradiative recombination and faster charge extraction at both interfaces close to the perovskite layer can be achieved by using our DIP-KCl strategy.As a result,inverted PSCs based on DIP-KCl present an increased efficiency from 17.1% to 19.2% and enhanced stability,retaining over 90% of their initial efficiency after aging at maximum power point tracking for 1000 h.This work provides a simple and efficient way for defect passivation to further increase the efficiency and stability of PSCs.展开更多
The ZrTiON gate-dielectric GaAs metal-oxide-semiconductor （MOS） capacitors with or without ZrAION as the interfacial passivation layer （IPL） are fabricated and their properties are investigated. The experimental r...The ZrTiON gate-dielectric GaAs metal-oxide-semiconductor （MOS） capacitors with or without ZrAION as the interfacial passivation layer （IPL） are fabricated and their properties are investigated. The experimental results show that the GaAs MOS capacitor with the ZrAION IPL exhibits better interracial and electrical properties, including lower interface-state density （1.14 × 10^12 cm^-2eV^-1）, smaller gate leakage current （6.82 × 10^-5 A//cm^2 at Vfb ＋1V）, smaller capacitance equivalent thickness （1.5 nm）, and larger k value （26）. The involved mechanisms lie in the fact that the ZrAION IPL can effectively block the diffusion of Ti and O towards the GaAs surface, thus suppressing the formation of interracial Ga-/As-oxides and As-As dimers, which leads to improved interracial and electrical properties for the devices.展开更多
The GaAs MOS capacitor was fabricated with HfTiON as high-k gate dielectric and NH3-plasma-treated ZnON as interfacial passivation layer （IPL）, and its interracial and electrical properties are investigated compared...The GaAs MOS capacitor was fabricated with HfTiON as high-k gate dielectric and NH3-plasma-treated ZnON as interfacial passivation layer （IPL）, and its interracial and electrical properties are investigated compared to its counterparts with ZnON IPL but no NH3-plasma treatment and without ZnON IPL and no plasma treatment. Experimental results show that low interface-state density near midgap （1.17×10^12 cm^-2eV^-1） and small gate leakage current density have been achieved for the GaAs MOS device with the stacked gate dielectric of Hf-TiON/ZnON plus NH3-plasma treatment. These improvements could be ascribed to the fact that the ZnON IPL can effectively block in-diffusion of oxygen atoms and out-diffusion of Ga and As atoms, and the NH3-plasma treatment can provide not only N atoms but also H atoms and NH radicals, which is greatly beneficial to removal of defective Ga/As oxides and As-As band, giving a high-quality ZnON/GaAs interface.展开更多
In the domain of perovskite solar cells(PSCs),the imperative to reconcile impressive photovoltaic performance with lead-related issue and environmental stability has driven innovative solutions.This study pioneers an ...In the domain of perovskite solar cells(PSCs),the imperative to reconcile impressive photovoltaic performance with lead-related issue and environmental stability has driven innovative solutions.This study pioneers an approach that not only rectifies lead leakage but also places paramount importance on the attainment of rigorous interfacial passivation.Crown ethers,notably benzo-18-crown-6-ether(B18C6),were strategically integrated at the perovskite-hole transport material interface.Crown ethers exhibit a dual role:efficiently sequestering and immobilizing Pb^(2+)ions through host-vip complexation and simultaneously establishing a robust interfacial passivation layer.Selected crown ether candidates,guided by density functional theory(DFT)calculations,demonstrated proficiency in binding Pb2+ions and optimizing interfacial energetics.Photovoltaic devices incorporating these materials achieved exceptional power conversion efficiency(PCE),notably 21.7%for B18C6,underscoring their efficacy in lead binding and interfacial passivation.Analytical techniques,including time-of-flight secondary ion mass spectrometry(ToF-SIMS),ultraviolet photoelectron spectroscopy(UPS),time-resolved photoluminescence(TRPL),and transient absorption spectroscopy(TAS),unequivocally affirmed Pb^(2+)ion capture and suppression of non-radiative recombination.Notably,these PSCs maintained efficiency even after enduring 300 h of exposure to 85%relative humidity.This research underscores the transformative potential of crown ethers,simultaneously addressing lead binding and stringent interfacial passivation for sustainable PSCs poised to commercialize and advance renewable energy applications.展开更多
Printable mesoscopic perovskite solar cells(PM-PSCs)possess notable merits in terms of cost-effectiveness,easy manufacturing,and large scale applications.Nevertheless,the absence of a hole transport layer contributes ...Printable mesoscopic perovskite solar cells(PM-PSCs)possess notable merits in terms of cost-effectiveness,easy manufacturing,and large scale applications.Nevertheless,the absence of a hole transport layer contributes to the exacerbation of carrier recombination,and the defects between the perovskite and electron transport layer(ETL)interfaces significantly decrease the efficiency of the devices.In this study,a bifunctional surface passivation approach is proposed by applying a thioacetamide(TAA)surfactant on the mesoporous TiO_(2)interface.The results demonstrate that TAA molecules could interact with TiO_(2),thereby diminishing the oxygen vacancy defects.Additionally,the amino group and sulfur atoms in TAA molecules act as Lewis base to effectively passivate the uncoordinated Pb^(2+)in perovskite and improve the morphology of perovskite,and decrease the trap-state density of perovskite.The TAA passivation mechanism improves the alignment of energy levels between TiO_(2)and perovskite,facilitating electron transport and reducing carrier recombination.Consequently,the TAA-passivated device achieved a champion power conversion efficiency(PCE)of 17.86%with a high fill factor(FF)of 79.16%and an open-circuit voltage(V_(OC))of 0.971 V.This investigation presents a feasible strategy for interfacial passivation of the ETL to further improve the efficiency of PM-PSCs.展开更多
Colloidal quantum dot （CQD） solar cells have attracted great interest due to their low cost and superior photo-electric properties. Remarkable improvements in cell performances of both quantum dot sensitized solar c...Colloidal quantum dot （CQD） solar cells have attracted great interest due to their low cost and superior photo-electric properties. Remarkable improvements in cell performances of both quantum dot sensitized solar cells （QDSCs） and FbX （X = S, Se） based CQD solar cells have been achieved in recent years, and the power conversion efficiencies （PCEs） ex- ceeding 12% were reported so far. In this review, we will focus on the recent progress in CQD solar cells. We firstly summarize the advance of CQD sensitizer materials and the strategies for enhancing carrier collection efficiency in QD- SCs, including developing multi-component alloyed CQDs and core-shell structured CQDs, as well as various methods to suppress interfacial carrier recombination. Then, we discuss the device architecture development of PbX CQD based solar cells and surface/interface passivation methods to increase light absorption and carrier extraction efficiencies. Finally, a short summary, challenge, and perspective are given.展开更多
Developing an efficient freshwater and electricity co-generation device(FECGD)can solve the shortage of freshwater and electricity.However,the poor salt resistance and refrigeration properties of the materials for FEC...Developing an efficient freshwater and electricity co-generation device(FECGD)can solve the shortage of freshwater and electricity.However,the poor salt resistance and refrigeration properties of the materials for FECGD put big challenges in the efficient and stable operation of these devices.To address these issues,we propose the covalent organic framework(COF)confined co-polymerization strategy to prepare COF-modified acrylamide cationic hydrogels(ACH-COF),where hydrogen bonding interlocking between negatively charged polymer chains and COF pores can form a salt resistant hydrogel for stabilizing tunable passive interfacial cooling(TPIC).The FECPDs based on the TPIC and salt resistance of ACH-COF display a maximum output power density of 2.28 W m-2,which is 4.3 times higher than that of a commercial thermoelec-tric generator under one solar radiation.The production rate of freshwater can reach 2.74 kg m-2 h-1.Our results suggest that the high efficiency and scala-bility of the FECGD can hold the promise of alleviating freshwater and power shortages.展开更多
Recent years have seen swift increase in the power conversion efficiency of perovskite solar cells(PSCs)Interface engineering is a promising route for further improving the performance of PSCs.Here we perform firstpri...Recent years have seen swift increase in the power conversion efficiency of perovskite solar cells(PSCs)Interface engineering is a promising route for further improving the performance of PSCs.Here we perform firstprinciples calculations to explore the effect of four candidate buffer materials(MACl,MAI,PbCl2and PbI2)on the electronic structures of the interface between MAPbI3absorber and TiO2.We find that MAX(X=Cl,I)as buffer layers will introduce a high electron barrier and enhance the electronhole recombination.Additionally,MAX does not passivate the surface states well.The conduction band minimum of PbI2is much lower than that of MAPbI3absorber,which significantly limits the band bending of the absorber and open-circuit voltage of solar cells.On the other side,suitable bandedge energy level positions,small lattice mismatch with TiO2surfaces,and excellent surface passivation make PbCl2a promising buffer material for absorber/electron-transport-layer interface engineering in PSCs.Our results in this work thus provide deep understanding on the effects of interface engineering with a buffer layer,which shall be useful for improving the performance of PSCs and related optoelectronics.展开更多
基金financially supported by the National Natural Science Foundation of China (51971080)the Shenzhen Bureau of Science,Technology and Innovation Commission (GXWD20201230155427003-20200730151200003 and JSGG20200914113601003)。
文摘The function of solid electrolytes and the composition of solid electrolyte interphase(SEI)are highly significant for inhibiting the growth of Li dendrites.Herein,we report an in-situ interfacial passivation combined with self-adaptability strategy to reinforce Li_(0.33)La_(0.557)TiO_(3)(LLTO)-based solid-state batteries.Specifically,a functional SEI enriched with LiF/Li_(3)PO_(4) is formed by in-situ electrochemical conversion,which is greatly beneficial to improving interface compatibility and enhancing ion transport.While the polarized dielectric BaTiO_(3)-polyamic acid(BTO-PAA,BP)film greatly improves the Li-ion transport kinetics and homogenizes the Li deposition.As expected,the resulting electrolyte offers considerable ionic conductivity at room temperature(4.3 x 10~(-4)S cm^(-1))and appreciable electrochemical decomposition voltage(5.23 V)after electrochemical passivation.For Li-LiFePO_(4) batteries,it shows a high specific capacity of 153 mA h g^(-1)at 0.2C after 100 cycles and a long-term durability of 115 mA h g^(-1)at 1.0 C after 800 cycles.Additionally,a stable Li plating/stripping can be achieved for more than 900 h at 0.5 mA cm^(-2).The stabilization mechanisms are elucidated by ex-situ XRD,ex-situ XPS,and ex-situ FTIR techniques,and the corresponding results reveal that the interfacial passivation combined with polarization effect is an effective strategy for improving the electrochemical performance.The present study provides a deeper insight into the dynamic adjustment of electrode-electrolyte interfacial for solid-state lithium batteries.
基金supported by the National Key Research and Development Program of China(2021YFB3800103)the Fundamental Research Funds for the Central Universities(000-0903069032)the National Natural Science Foundation of China(52203237).
文摘Here,we report a mixed GAI and MAI(MGM)treatment method by forming a 2D alternating-cation-interlayer(ACI)phase(n=2)perovskite layer on the 3D perovskite,modulating the bulk and interfacial defects in the perovskite films simultaneously,leading to the suppressed nonradiative recombination,longer lifetime,higher mobility,and reduced trap density.Consequently,the devices’performance is enhanced to 24.5%and 18.7%for 0.12 and 64 cm^(2),respectively.In addition,the MGM treatment can be applied to a wide range of perovskite compositions,including MA-,FA-,MAFA-,and CsFAMA-based lead halide perovskites,making it a general method for preparing efficient perovskite solar cells.Without encapsulation,the treated devices show improved stabilities.
基金Funded by the National Natural Science Foundation of China (No. 61704113)the Higher Vocational Brand Mayer in Guangdong Province (No.610103)the Educational Science Planning Project of Guangdong Province (Higher Education Special)。
文摘The Ge metal-oxide-semiconductor (MOS) capacitors were fabricated with HfO2 as gate dielectric.AlON,NdON,and NdAlON were deposited between the gate dielectric and the Ge substrate as the interfacial passivation layer (IPL).The electrical properties (such as capacitance-voltage (C-V) and gate leakage current density versus gate voltage (J_(g)-V_(g))) were measured by HP4284A precision LCR meter and HP4156A semiconductor parameter analyzer.The chemical states and interfacial quality of the high-k/Ge interface were investigated by X-ray photoelectron spectroscopy (XPS).The experimental results show that the sample with the NdAlON as IPL exhibits the excellent interfacial and electrical properties.These should be attributed to an effective suppression of the Ge suboxide and HfGeOx interlayer,and an enhanced blocking role against inter-diffusion of the elements during annealing by the NdAlON IPL.
基金financially supported by the National Natural Science Foundation of China,China(51672094,51861145404,51822203,and 11627801)the National Key Research and Development Program of China,China(2016YFA0201001)+4 种基金the China Postdoctoral Science Foundation(2016M602286)the Fundamental Research Funds for the Central Universities,China(2016JCTD111,2018RCPY003,2020kfy XJJS008)the Shenzhen Science and Technology Innovation Committee,China(JCYJ20170307165905513,JCYJ20180507182257563)the Natural Science Foundation of Guangdong Province,China(2017A030313342)the Outstanding Young Talent Research Fund of Zhengzhou University,China。
文摘Defect-induced charge carrier recombination at the interfaces between perovskite and adjacent charge transport layers restricts further improvements in the device performance of perovskite solar cells(PSCs).Defect passivation at these interfaces can reduce trap states and inhibit the induced nonradiative recombination.Herein,we report a double-sided interfacial passivation via simply evaporating potassium chloride(DIP-KCl)at both the hole transport layer(HTL)/perovskite and perovskite/electron transport layer(ETL)interfaces in inverted planar PSCs.We demonstrate that the bottom KCl layer at the HTL/perovskite interface not only reduces the interfacial defects and improves the interfacial contact,but also leads to increased perovskite crystallinity,while the top KCl layer at the perovskite/ETL interface efficiently passivates the perovskite top surface defects and facilitates electron extraction at this interface.Thus,suppressed nonradiative recombination and faster charge extraction at both interfaces close to the perovskite layer can be achieved by using our DIP-KCl strategy.As a result,inverted PSCs based on DIP-KCl present an increased efficiency from 17.1% to 19.2% and enhanced stability,retaining over 90% of their initial efficiency after aging at maximum power point tracking for 1000 h.This work provides a simple and efficient way for defect passivation to further increase the efficiency and stability of PSCs.
基金Supported by the National Natural Science Foundation of China under Grant Nos 61176100,61274112 and 61404055
文摘The ZrTiON gate-dielectric GaAs metal-oxide-semiconductor （MOS） capacitors with or without ZrAION as the interfacial passivation layer （IPL） are fabricated and their properties are investigated. The experimental results show that the GaAs MOS capacitor with the ZrAION IPL exhibits better interracial and electrical properties, including lower interface-state density （1.14 × 10^12 cm^-2eV^-1）, smaller gate leakage current （6.82 × 10^-5 A//cm^2 at Vfb ＋1V）, smaller capacitance equivalent thickness （1.5 nm）, and larger k value （26）. The involved mechanisms lie in the fact that the ZrAION IPL can effectively block the diffusion of Ti and O towards the GaAs surface, thus suppressing the formation of interracial Ga-/As-oxides and As-As dimers, which leads to improved interracial and electrical properties for the devices.
基金supported by the National Natural Science Foundation of China(Nos.61176100,61274112,61404055)
文摘The GaAs MOS capacitor was fabricated with HfTiON as high-k gate dielectric and NH3-plasma-treated ZnON as interfacial passivation layer （IPL）, and its interracial and electrical properties are investigated compared to its counterparts with ZnON IPL but no NH3-plasma treatment and without ZnON IPL and no plasma treatment. Experimental results show that low interface-state density near midgap （1.17×10^12 cm^-2eV^-1） and small gate leakage current density have been achieved for the GaAs MOS device with the stacked gate dielectric of Hf-TiON/ZnON plus NH3-plasma treatment. These improvements could be ascribed to the fact that the ZnON IPL can effectively block in-diffusion of oxygen atoms and out-diffusion of Ga and As atoms, and the NH3-plasma treatment can provide not only N atoms but also H atoms and NH radicals, which is greatly beneficial to removal of defective Ga/As oxides and As-As band, giving a high-quality ZnON/GaAs interface.
基金supported by the Basic Science Research Program through the National Research Foundation of Korea(NRF)funded by the Ministry of Education(2021R1F1A1047203)financially supported by the Ministry of Trade,Industry and Energy(MOTIE)and Korea Institute for Advancement of Technology(KIAT)through the International Cooperative R&D program(P0026100)+1 种基金the NRF grant funded by the Korea government(MSIT)(2021R1I1A1A01061036)financial support from the NRF grant funded by the Korea government(MSIT)(RS-2023-00213920)。
文摘In the domain of perovskite solar cells(PSCs),the imperative to reconcile impressive photovoltaic performance with lead-related issue and environmental stability has driven innovative solutions.This study pioneers an approach that not only rectifies lead leakage but also places paramount importance on the attainment of rigorous interfacial passivation.Crown ethers,notably benzo-18-crown-6-ether(B18C6),were strategically integrated at the perovskite-hole transport material interface.Crown ethers exhibit a dual role:efficiently sequestering and immobilizing Pb^(2+)ions through host-vip complexation and simultaneously establishing a robust interfacial passivation layer.Selected crown ether candidates,guided by density functional theory(DFT)calculations,demonstrated proficiency in binding Pb2+ions and optimizing interfacial energetics.Photovoltaic devices incorporating these materials achieved exceptional power conversion efficiency(PCE),notably 21.7%for B18C6,underscoring their efficacy in lead binding and interfacial passivation.Analytical techniques,including time-of-flight secondary ion mass spectrometry(ToF-SIMS),ultraviolet photoelectron spectroscopy(UPS),time-resolved photoluminescence(TRPL),and transient absorption spectroscopy(TAS),unequivocally affirmed Pb^(2+)ion capture and suppression of non-radiative recombination.Notably,these PSCs maintained efficiency even after enduring 300 h of exposure to 85%relative humidity.This research underscores the transformative potential of crown ethers,simultaneously addressing lead binding and stringent interfacial passivation for sustainable PSCs poised to commercialize and advance renewable energy applications.
基金funded by the Yunnan Yunling Scholars Project,the National Natural Science Foundation of China(No.51562038)the Young-Middle-Aged Academic and Technical Leaders Reserve Talent Project in Yunnan Province(No.202005AC160015)the Yunnan Basic Applied Research Project(No.202101AT070013).
文摘Printable mesoscopic perovskite solar cells(PM-PSCs)possess notable merits in terms of cost-effectiveness,easy manufacturing,and large scale applications.Nevertheless,the absence of a hole transport layer contributes to the exacerbation of carrier recombination,and the defects between the perovskite and electron transport layer(ETL)interfaces significantly decrease the efficiency of the devices.In this study,a bifunctional surface passivation approach is proposed by applying a thioacetamide(TAA)surfactant on the mesoporous TiO_(2)interface.The results demonstrate that TAA molecules could interact with TiO_(2),thereby diminishing the oxygen vacancy defects.Additionally,the amino group and sulfur atoms in TAA molecules act as Lewis base to effectively passivate the uncoordinated Pb^(2+)in perovskite and improve the morphology of perovskite,and decrease the trap-state density of perovskite.The TAA passivation mechanism improves the alignment of energy levels between TiO_(2)and perovskite,facilitating electron transport and reducing carrier recombination.Consequently,the TAA-passivated device achieved a champion power conversion efficiency(PCE)of 17.86%with a high fill factor(FF)of 79.16%and an open-circuit voltage(V_(OC))of 0.971 V.This investigation presents a feasible strategy for interfacial passivation of the ETL to further improve the efficiency of PM-PSCs.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61274134,91433205,51372270,51402348,51421002,21173260,11474333,51372272,and 51627803)the Knowledge Innovation Program of the Chinese Academy of Sciences+2 种基金the Natural Science Foundation of Beijing,China(Grant No.4173077)USTB Talent Program,China(Grant No.06500053)Fundamental Research Funds for the Central Universities,China(Grant Nos.FRF-BR-16-018A,FRF-TP-17-069A1,and 06198178)
文摘Colloidal quantum dot （CQD） solar cells have attracted great interest due to their low cost and superior photo-electric properties. Remarkable improvements in cell performances of both quantum dot sensitized solar cells （QDSCs） and FbX （X = S, Se） based CQD solar cells have been achieved in recent years, and the power conversion efficiencies （PCEs） ex- ceeding 12% were reported so far. In this review, we will focus on the recent progress in CQD solar cells. We firstly summarize the advance of CQD sensitizer materials and the strategies for enhancing carrier collection efficiency in QD- SCs, including developing multi-component alloyed CQDs and core-shell structured CQDs, as well as various methods to suppress interfacial carrier recombination. Then, we discuss the device architecture development of PbX CQD based solar cells and surface/interface passivation methods to increase light absorption and carrier extraction efficiencies. Finally, a short summary, challenge, and perspective are given.
基金National Natural Science Foundation of China,Grant/Award Numbers:22108125,22175094Natural Science Foundation of Jiangsu Province,Grant/Award Number:BK20210627+1 种基金China Postdoctoral Science Foundation,Grant/Award Number:2023M730484Postgraduate Research&Practice Innovation Program of Jiangsu Province,Grant/Award Number:KYCX23_1173。
文摘Developing an efficient freshwater and electricity co-generation device(FECGD)can solve the shortage of freshwater and electricity.However,the poor salt resistance and refrigeration properties of the materials for FECGD put big challenges in the efficient and stable operation of these devices.To address these issues,we propose the covalent organic framework(COF)confined co-polymerization strategy to prepare COF-modified acrylamide cationic hydrogels(ACH-COF),where hydrogen bonding interlocking between negatively charged polymer chains and COF pores can form a salt resistant hydrogel for stabilizing tunable passive interfacial cooling(TPIC).The FECPDs based on the TPIC and salt resistance of ACH-COF display a maximum output power density of 2.28 W m-2,which is 4.3 times higher than that of a commercial thermoelec-tric generator under one solar radiation.The production rate of freshwater can reach 2.74 kg m-2 h-1.Our results suggest that the high efficiency and scala-bility of the FECGD can hold the promise of alleviating freshwater and power shortages.
基金financially supported by the National Natural Science Foundation of China(11804058,61571415,11674310 and 61622406)the financial support from RIE2020 AME Programmatic Grant A18A1b0045 funded by A*STARSERC,Singaporethe supports from the Agency for Science,Technology and Research(A*STAR)。
文摘Recent years have seen swift increase in the power conversion efficiency of perovskite solar cells(PSCs)Interface engineering is a promising route for further improving the performance of PSCs.Here we perform firstprinciples calculations to explore the effect of four candidate buffer materials(MACl,MAI,PbCl2and PbI2)on the electronic structures of the interface between MAPbI3absorber and TiO2.We find that MAX(X=Cl,I)as buffer layers will introduce a high electron barrier and enhance the electronhole recombination.Additionally,MAX does not passivate the surface states well.The conduction band minimum of PbI2is much lower than that of MAPbI3absorber,which significantly limits the band bending of the absorber and open-circuit voltage of solar cells.On the other side,suitable bandedge energy level positions,small lattice mismatch with TiO2surfaces,and excellent surface passivation make PbCl2a promising buffer material for absorber/electron-transport-layer interface engineering in PSCs.Our results in this work thus provide deep understanding on the effects of interface engineering with a buffer layer,which shall be useful for improving the performance of PSCs and related optoelectronics.
