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Growth interface of CdMnTe crystal by traveling heater method 被引量:1
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作者 吴文其 张继军 +5 位作者 王林军 闵嘉华 温旭亮 梁小燕 黄建 唐可 《Transactions of Nonferrous Metals Society of China》 SCIE EI CAS CSCD 2016年第5期1433-1438,共6页
The growth interfaces of CdMnTe(CMT) crystals grown by traveling heater method(THM) were studied. Two types of polycrystalline CMT feed ingots synthesized in a traditional rocking furnace and vertical Bridgman(VB... The growth interfaces of CdMnTe(CMT) crystals grown by traveling heater method(THM) were studied. Two types of polycrystalline CMT feed ingots synthesized in a traditional rocking furnace and vertical Bridgman(VB) furnace were adopted in THM growth, and the effects of the polycrystalline feed on the growth interface were revealed. The morphology of the growth interface of CMT crystal(CMT2) grown from the feed by vertical Bridgman was smoother with lower curvature compared with that of CMT crystal(CMT1) from the feed by rocking furnace. The radial Mn composition and Te inclusion distribution of the CMT wafers were analyzed and correlated to the growth interface. The Mn segregation along the radial direction and Te inclusion density of CMT2 were lower than those of CMT1. The VB method synthesized polycrystalline feed could improve the growth interface morphology, which is beneficial for decreasing the Te inclusions and Mn segregation in CMT wafers. 展开更多
关键词 CDMNTE traveling heater method growth interface polycrystalline feed material
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ELASTIC-PLASTIC CRACK GROWTH ON PLANE STRAIN BIMATERIAL INTERFACE 被引量:1
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作者 罗学富 青木繁 《Acta Mechanica Sinica》 SCIE EI CAS CSCD 1992年第3期261-270,共10页
Finite element computations are carried out to simulate plane strain crack growth on a bimaterial interface under the assumption of small scale yielding.The modified Guron constitutive equation and the element vanish ... Finite element computations are carried out to simulate plane strain crack growth on a bimaterial interface under the assumption of small scale yielding.The modified Guron constitutive equation and the element vanish technique introduced by Tvergaard et al.are used to model the final formation of an open crack.It is found from the calculation that the critical fracture toughness for crack growth is much low- er in bimaterials than that in homogeneous material.The critical fracture toughness is strongly dependent on material properties of the bimaterial pair and the mixed mode of remote loads.The interface crack grows in the more compliant(lower hardening)material or in the weaker(lower yield strength)material.In Mode-Ⅰ loading,the crack grows zigzag along the interface. 展开更多
关键词 interface crack growth plane strain modified Gurson's model
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Kinetics of Spherical Interface in Crystal Growth
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作者 Mei-Qin Fu Qing-Ling Bi Yong-Jun Lu 《Chinese Physics Letters》 SCIE CAS CSCD 2017年第4期112-115,共4页
The growth kinetics of spherical NiAl and CuZr crystals are studied by using molecular dynamics simulations. The growth rates of crystals are found to increase with the grain radius. The simulations show that the inte... The growth kinetics of spherical NiAl and CuZr crystals are studied by using molecular dynamics simulations. The growth rates of crystals are found to increase with the grain radius. The simulations show that the interface thickness and the Jackson α-faetor increase as the growth proceeds, indicating that the interface becomes increasingly rough during growth. Due to the increasing interface roughening, the fraction of repeatable growth sites at interface f is proposed to actually increase in growth. An attachment rate, which is defined as the fraction of atoms that join the crystal interface without leaving, is used to approximate f, displaying a linear increase. With this approximation, we predict the growth rates as a function of the crystal radius, and the results qualitatively agree with those from the direct simulations. 展开更多
关键词 Kinetics of Spherical interface in Crystal growth
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Liquid-liquid interface‐assisted growth of two‐dimensional organic semiconductor single crystals:Mechanisms,properties,and applications 被引量:1
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作者 Jinwen Wang Tingyi Yan +3 位作者 Lingyun Li Zheng Ren Xiujuan Zhang Jiansheng Jie 《Information & Functional Materials》 2024年第2期220-241,共22页
Two‐dimensional organic semiconductor single crystals(2D OSSCs)represent the promising candidates for the construction of high‐performance electronic and optoelectronic devices due to their ultrathin thicknesses,fre... Two‐dimensional organic semiconductor single crystals(2D OSSCs)represent the promising candidates for the construction of high‐performance electronic and optoelectronic devices due to their ultrathin thicknesses,free of grain boundaries,and long‐range ordered molecular structures.In recent years,substantial efforts have been devoted to the fabrication of the large‐sized and layer‐controlled 2D OSSCs at the liquid‐liquid interface.This unique interface could act as the molecular flat and defect‐free substrate for regulating the nucleation and growth processes and enabling the formation of large‐sized ultrathin 2D OSSCs.Therefore,this review focuses on the liquid-liquid interface‐assisted growth methods for the controllable preparation of 2D OSSCs,with a particular emphasis on the advantages and limitations of the corresponding methods.Furthermore,the typical methods employed to control the crystal sizes,morphologies,structures,and orientations of 2D OSSCs at the liquid-liquid interface are discussed in detail.Then,the recent progresses on the 2D OSSCs‐based optoelectronic devices,such as organic field‐effect transistors,ambipolar transistors,and phototransistors are highlighted.Finally,the key challenges and further outlook are proposed in order to promote the future development of the 2D OSSCs in the field of the next‐generation organic optoelectronic devices. 展开更多
关键词 ambipolar transistors liquid‐liquid interface‐assisted growth organic field‐effect transistors organic phototransistors two‐dimensional organic semiconductor single crystal
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Synthesis of hierarchical sieve-like mesoporous silica nanoparticle aggregates via centrifugal method for drug delivery system
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作者 Qin Gao Wensheng Xie +3 位作者 Lingyun Zhao Yu Wang Wei Zhang Qiang Cai 《Chinese Chemical Letters》 SCIE CAS CSCD 2018年第12期1804-1810,共7页
A facile approach towards the synthesis of a novel hierarchical sieve-like structure of mesoporous silica nanoparticle aggregates(hsMSNA) is reported using a centrifugal method at room temperature, based on the Kelvin... A facile approach towards the synthesis of a novel hierarchical sieve-like structure of mesoporous silica nanoparticle aggregates(hsMSNA) is reported using a centrifugal method at room temperature, based on the Kelvin-Helmholtz instability and soft-template method. The developed approach is simple and can potentially be applied for scaled-up preparation. Importantly, scanning electron microscopy,transmission electron microscopy, small-angle X-ray diffraction, and nitrogen adsorption-desorption experiments characterize the mesoporous silica as hsMSNA consisting of 40-100 nm mesoporous silica nanoparticles piled at 1-2 μm cylindrical pores in sieve-like tissues. Further, various pore sizes and sievemesh-, and vesicular-like structures can be obtained by adjusting the reaction conditions. The BrunauerEmmett-Teller specific surface area is as large as 500 m~2/g with a 47 cm~3/g pore volume, facilitating easy drug loading and delivery. Cytotoxicity assays show that the samples are not cytotoxic under a high concentration of 200μg/mL. Finally, the high drug encapsulation efficiency and sustained release behaviors indicats the considerable potential of the hsMSNA as a drug delivery system in the field of nanomedicine. 展开更多
关键词 Mesoporous silica Hierarchical structure interface growth Centrifugal method Drug delivery system
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Current development in quantitative phase-field modeling of solidification 被引量:2
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作者 Xiang-lei Dong Hui Xing +1 位作者 Kang-rong Weng Hong-liang Zhao 《Journal of Iron and Steel Research International》 SCIE EI CAS CSCD 2017年第9期865-878,共14页
The quantitative phase-field simulations were reviewed on the processes of solidification of pure metals and alloys.The quantitative phase-field equations were treated in a diffuse thin-interface limit,which enabled t... The quantitative phase-field simulations were reviewed on the processes of solidification of pure metals and alloys.The quantitative phase-field equations were treated in a diffuse thin-interface limit,which enabled the quantitative links between interface dynamics and model parameters in the quasi-equilibrium simulations.As a result,the quantitative modeling is more effective in dealing with microstructural pattern formation in the large scale simulations without any spurious kinetic effects.The development of the quantitative phase-field models in modeling the formation of microstructures such as dendritic structures,eutectic lamellas,seaweed morphologies,and grain boundaries in different solidified conditions was also reviewed with the purpose of guiding to find the new prospect of applications in the quantitative phase-field simulations. 展开更多
关键词 Phase-field modeling Liquid-solid interface Solidification Dendritic growth Microstructural formation
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Microstructure and secondary phases in epitaxial LaBaCo_2O_(5.5 + δ) thin films
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作者 Jiangbo Lu Lu Lu +2 位作者 Sheng Cheng Ming Liu Chunlin Jia 《Journal of Materials Science & Technology》 SCIE EI CAS CSCD 2018年第2期398-402,共5页
Aberration-corrected scanning transmission electron microscopy was employed to investigate the microstructures and secondary phases in LaBaCo2O5.5+δ(LBCO) thin films grown on SrTiO3 (STO) substrates. The as-grow... Aberration-corrected scanning transmission electron microscopy was employed to investigate the microstructures and secondary phases in LaBaCo2O5.5+δ(LBCO) thin films grown on SrTiO3 (STO) substrates. The as-grown films showed an epitaxial growth on the substrates with atomically sharp interfaces and orientation relationships of [100]LBCO//[100]STO and (001)LBCO//(001)STO. Secondary phases were observed in the films, which strongly depended on the sample fabrication conditions. In the film prepared at a temperature of 900 ℃, nano-scale CoO pillars nucleated on the substrate, and grew along the [001] direction of the film. In the film grown at a temperature of 1000 ℃, isolated nano-scale C0304 particles appeared, which promoted the growth of {111 } twinning structures in the film. The orientation relationships and the interfaces between the secondary phases and the films were illustrated, and the growth mechanism of the film was discussed. 展开更多
关键词 Nano-structure Faceted interfaces Secondary phase growth Epitaxial thin film Microstructure Aberration-corrected scanning transmission electron microscopy
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