Due to the weak interlayer interactions,the binary Ⅲ-Ⅵ chalcogenides Ga Se can exist in several distinct polymorphs.Among them,the so-called β-and ε-phases simultaneously exhibit favorable total energies and moder...Due to the weak interlayer interactions,the binary Ⅲ-Ⅵ chalcogenides Ga Se can exist in several distinct polymorphs.Among them,the so-called β-and ε-phases simultaneously exhibit favorable total energies and moderate band gaps,which offer a good platform to explore their thermoelectric properties.Here,we demonstrate by first-principles calculations that the two systems have very similar band structures and phonon dispersions,despite different stacking sequences between adjacent layers.Interestingly,the lattice thermal conductivity of ε-GaSe is obviously lower than that of β-GaSe,which is inherently tied to stronger lattice anharmonicity caused by bonding heterogeneity.Besides,both systems exhibit higher p-type power factors due to doubly degenerate bands with weaker dispersions around the valence band maximum.As a consequence,a significantly enhanced p-type figure-of-merit of 2.1 can be realized at 700 K along the out-of-plane direction of theε-phase.展开更多
基金supported by the National Natural Science Foundation of China(Grant Nos.62074114 and 12474019)。
文摘Due to the weak interlayer interactions,the binary Ⅲ-Ⅵ chalcogenides Ga Se can exist in several distinct polymorphs.Among them,the so-called β-and ε-phases simultaneously exhibit favorable total energies and moderate band gaps,which offer a good platform to explore their thermoelectric properties.Here,we demonstrate by first-principles calculations that the two systems have very similar band structures and phonon dispersions,despite different stacking sequences between adjacent layers.Interestingly,the lattice thermal conductivity of ε-GaSe is obviously lower than that of β-GaSe,which is inherently tied to stronger lattice anharmonicity caused by bonding heterogeneity.Besides,both systems exhibit higher p-type power factors due to doubly degenerate bands with weaker dispersions around the valence band maximum.As a consequence,a significantly enhanced p-type figure-of-merit of 2.1 can be realized at 700 K along the out-of-plane direction of theε-phase.
