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Sub-lattice amorphization as a new driver of room temperature plasticity in inorganic semiconductors
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作者 Xinzhi Wu Takao Mori 《The Innovation》 2025年第6期19-20,共2页
BACKGROUND Metals exhibit excellent ductility due to isotropic metallic bonding,enabling large-scale plastic deformation through dislocation motion.In contrast,inorganic semiconductors,typically bonded via covalent or... BACKGROUND Metals exhibit excellent ductility due to isotropic metallic bonding,enabling large-scale plastic deformation through dislocation motion.In contrast,inorganic semiconductors,typically bonded via covalent or ionic interactions,possess strong directional bonding that inhibits dislocation movement,rendering them brittle at room temperature.This fundamental distinction constrains the manufacturing processes of these materials,necessitating subtractive techniques such as cutting,grinding,and etching.The ability to impart metal-like plasticity to inorganic semiconductors would significantly enhance their manufacturability and expand their applications in flexible electronics,wearable devices,and bio-integrated technologies. 展开更多
关键词 directional bonding subtractive techniques manufacturing processes plastic deformation room temperature plasticity isotropic metallic bondingenabling sub lattice amorphization ionic interactionspossess
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