This paper presents a low-voltage low-power variable gain amplifier,which is applied in the automatic gain control loop of a super heterodyne receiver. Six stages are cascaded to provide an 81dB digitally controlled g...This paper presents a low-voltage low-power variable gain amplifier,which is applied in the automatic gain control loop of a super heterodyne receiver. Six stages are cascaded to provide an 81dB digitally controlled gain range in a 3dB step. The gain step error is less than 0.5dB. It operates at an intermediate frequency of 300kHz, and the power consumption is 1.35mW from a 1.8V supply. The prototype chip is implemented in a TSMC＇s 0.18μm 1P6M CMOS process and occupies approximately 0.24mm^2 . It is very suitable for portable wire- less communication systems. The measurement results agree well with the system requirements.展开更多
A modified drain source current suitable for simulation program with integrated circuit emphasis （SPICE） simulations of SiC MESFETS is presented in this paper. Accurate modeling of SiC MESFET is achieved by introduc...A modified drain source current suitable for simulation program with integrated circuit emphasis （SPICE） simulations of SiC MESFETS is presented in this paper. Accurate modeling of SiC MESFET is achieved by introducing three parameters in Triquint＇s own model （TOM）. The model, which is single piece and continuously differentiable, is verified by measured direct current （DC） I-V curves and scattering parameters （up to 20 GHz）.展开更多
文摘This paper presents a low-voltage low-power variable gain amplifier,which is applied in the automatic gain control loop of a super heterodyne receiver. Six stages are cascaded to provide an 81dB digitally controlled gain range in a 3dB step. The gain step error is less than 0.5dB. It operates at an intermediate frequency of 300kHz, and the power consumption is 1.35mW from a 1.8V supply. The prototype chip is implemented in a TSMC＇s 0.18μm 1P6M CMOS process and occupies approximately 0.24mm^2 . It is very suitable for portable wire- less communication systems. The measurement results agree well with the system requirements.
文摘A modified drain source current suitable for simulation program with integrated circuit emphasis （SPICE） simulations of SiC MESFETS is presented in this paper. Accurate modeling of SiC MESFET is achieved by introducing three parameters in Triquint＇s own model （TOM）. The model, which is single piece and continuously differentiable, is verified by measured direct current （DC） I-V curves and scattering parameters （up to 20 GHz）.
