Mixed Al-Si and Al-Si-SiC powders were employed as insert layers to reactive diffusion bond SiCp/6063 MMC （metal matrix composites）. The results show that SiCp/6063 MMC joints bonded by the insert layer of the mixed...Mixed Al-Si and Al-Si-SiC powders were employed as insert layers to reactive diffusion bond SiCp/6063 MMC （metal matrix composites）. The results show that SiCp/6063 MMC joints bonded by the insert layer of the mixed Al-Si powder have a dense joining layer with a typical hypoeutectic microstructtn＇e. Using the mixed Al-Si-SiC powder as the insert layer, SiCp/6063 MMC can be reactive diffusion bonded by a composite joint. Because of the SiC segregation, however, there are a number of porous zones in the joining layer, which results in the bad shear strength of the joints reactive diffusion bonded by the insert layer of the mixed A1-Si- SiC powder, even lower than that of the joints reactive diffusion bonded by the insert layer of the mixed Al-Si powder. Ti and Mg added in the insert layers obviously improve the strength of the joints reactive diffusion bonded by the insert layer of the mixed Al- Si-SiC powder, especially, Mg has a more obvious effect.展开更多
Enhancement of post-annealing stability in Co/ Ni multilayers with perpendicular magnetic anisotropy （PMA） was obtained by inserting Au layers into Ni/Co interfaces. After annealing at 350 ℃, the effective mag- net...Enhancement of post-annealing stability in Co/ Ni multilayers with perpendicular magnetic anisotropy （PMA） was obtained by inserting Au layers into Ni/Co interfaces. After annealing at 350 ℃, the effective mag- netic anisotropy density （Kef0 for Ta（3）/Pt（2）/[Co（0.3）/ Ni（0.6）/Au（0.3）]× 3/Co（0.3）/Pt（1）/Ta（3） （in nm） keeps at 0.48 × 105 J·m^-3. Scanning transmission electron micro- scopy-high-angle annular dark field （STEM-HAADF） analysis shows that the diffusion between Ni and Co layers is obstructed by the Au insertion layers among them, which is responsible for the post-annealing stability enhancement of the multilayers. Multilayers with Pt insertion layers were also investigated as reference samples in this work. Com- pared with Pt-layer-inserted Co/Ni multilayers, the Au insertion layers are found to bring seldom interfacial PMA to the multilayers, making it competitive in being employed to enhance the post-annealing stability of PMA Co/Ni multilayers which are used for magnetic random access memory devices （MRAM）.展开更多
The In segregation and its suppression in InGaAs/AlGaAs quantum well are investigated by using high-resolution x-ray diffraction(XRD)and photoluminescence(PL),combined with the state-of-the-art aberration corrected sc...The In segregation and its suppression in InGaAs/AlGaAs quantum well are investigated by using high-resolution x-ray diffraction(XRD)and photoluminescence(PL),combined with the state-of-the-art aberration corrected scanning transmission electron microscopy(Cs-STEM)techniques.To facility our study,we grow two multiple quantum wells(MQWs)samples,which are almost identical except that in sample B a thin GaAs layer is inserted in each of the InGaAs well and AlGaAs barrier layer comparing to pristine InGaAs/AlGaAs MQWs(sample A).Our study indeed shows the direct evidences that In segregation occurs in the InGaAs/AlGaAs interface,and the effect of the Ga As insertion layer on suppressing the segregation of In atoms is also demonstrated on the atomic-scale.Therefore,the atomic-scale insights are provided to understand the segregation behavior of In atoms and to unravel the underlying mechanism of the effect of GaAs insertion layer on the improvement of crystallinity,interface roughness,and further an enhanced optical performance of InGaAs/AlGaAs QWs.展开更多
The impacts of HfOx inserting layer thickness on the electrical properties of the ZnO-based transparent resistance random access memory （TRRAM） device were investigated in this paper. The bipolar resistive switching...The impacts of HfOx inserting layer thickness on the electrical properties of the ZnO-based transparent resistance random access memory （TRRAM） device were investigated in this paper. The bipolar resistive switching behavior of a single ZnO film and bilayer HfOx/ZnO films as active layers for TRRAM devices was demonstrated. It was revealed that the bilayer TRRAM device with a 10-nm HfOx inserted layer had a more stable resistive switching behavior than other devices including the single layer device, as well as being forming free, and the transmittance was more than 80% in the visible region. For the HfOx/ZnO devices, the current conduction behavior was dominated by the space-charge-limited current mechanism in the low resistive state （LRS） and Schottky emission in the high resistive state （HRS）, while the mechanism for single layer devices was controlled by ohmic conduction in the LRS and Poole-Frenkel emission in the HRS.展开更多
GaN-based p-channel heterostructure field-effect transistors(p-HFETs)face significant constraints on on-state currents compared with n-channel high electron mobility transistors.In this work,we propose a novel double ...GaN-based p-channel heterostructure field-effect transistors(p-HFETs)face significant constraints on on-state currents compared with n-channel high electron mobility transistors.In this work,we propose a novel double heterostructure which introduces an additional p-GaN insertion layer into traditional p-HFETs.The impact of the device structure on the hole densities and valence band energies of both the upper and lower channels is analyzed by using Silvaco TACD simulations,including the thickness of the upper AlGaN layer and the doping impurities and concentration in the GaN buffer layer,as well as the thickness and Mg-doping concentration in the p-GaN insertion layer.With the help of the p-GaN insertion layer,the C-doping concentration in the GaN buffer layer can be reduced,while the density of the two-dimensional hole gas in the lower channel is enhanced at the same time.This work suggests that a double heterostructure with a p-GaN insertion layer is a better approach to improve p-HFETs compared with those devices with C-doped buffer layer alone.展开更多
Mixed Al-Si and Al-Cu powders were investigated as insert layers to reactive diffusion bond SiCp/6063 metal matrix composite(MMC).The results show that SiCp/6063 MMC joints bonded by the insert layers of the mixed Al-...Mixed Al-Si and Al-Cu powders were investigated as insert layers to reactive diffusion bond SiCp/6063 metal matrix composite(MMC).The results show that SiCp/6063 MMC joints bonded by the insert layers of the mixed Al-Si and Al-Cu powders have a dense joining layer of high quality.The mass transfer between the bonded materials and insert layers during bonding leads to the hypoeutectic microstructure of the joining layers bonded by both the mixed Al-Si and Al-Cu powders with eutectic composition.At fixed bonding time(temperature),the shear strength of the joints by both insert layers of the mixed Al-Si and Al-Cu powders increases with increasing the bonding temperature(time),but get maxima at bonding temperature 600℃(time 90 min).展开更多
Mixed Al-Si, Al-Si-SiC and Al-Si-W powders were employed as insert layers to reactive diffusion bond SiC_p/6063 MMC. The results show that SiC_p/6063 MMC joints bonded by the insert layer of the mixed Al-Si powder hav...Mixed Al-Si, Al-Si-SiC and Al-Si-W powders were employed as insert layers to reactive diffusion bond SiC_p/6063 MMC. The results show that SiC_p/6063 MMC joints bonded by the insert layer of the mixed Al-Si powder have a dense joining layer with a typical hypoeutectic microstructure. Using mixed Al-Si-SiC powder as insert layer, SiC_p/6063 MMC can be reactive diffusion bonded by a composite joint. Because of the SiC segregations, however, there are a number of porous zones in the joining layer, which results in the low shear strength of the joints, even lower than that of joints reactive diffusion bonded by the insert layer of mixed Al-Si powder. The W added into the insert layer of Al-Si-W nearly all reacts with Al to form intermetallic WAl_ 12 during bonding. The reaction between the W and Al facilitates to form a dense joint of high quality, and the formed intermetallic WAl_ 12 has a reinforcing effect on the joints, which lead to the high shear strength of the joints. In general, under the condition of fixed bonding time (temperature), the shear strengths of the joints increase as the bonding temperature (time) increases, but tend to a maximum at bonding temperature of 600℃(time 90min).展开更多
To study the influence of CoFeB/MgO interface on tunneling magnetoresistance （TMR）, different structures of magnetic tunnel junctions （MTJs） are successfully prepared by the magnetron sputtering technique and char...To study the influence of CoFeB/MgO interface on tunneling magnetoresistance （TMR）, different structures of magnetic tunnel junctions （MTJs） are successfully prepared by the magnetron sputtering technique and characterized by atomic force microscopy, a physical property measurement system, x-ray photoelectron spectroscopy, and transmission electron microscopy. The experimental results show that TMR of the CoFeB/Mg/MgO/CoFeB structure is evidently improved in comparison with the CoFeB/MgO/CoFeB structure because the inserted Mg layer prevents Fe-oxide formation at the CoFeB/MgO interface, which occurs in CoFeB/MgO/CoFeB MTJs. The inherent properties of the CoFeB/MgO/CoFeB, CoFeB/Fe-oxide/MgO/CoFeB and CoFeB/Mg/MgO/CoFeB MTJs are simulated by using the theories of density functions and non-equilibrium Green functions. The simulated results demonstrate that TMR of CoFeB/Fe-oxide/MgO/CoFeB MTJs is severely decreased and is only half the value of the CoFeB/Mg/MgO/CoFeB MTJs. Based on the experimental results and theoretical analysis, it is believed that in CoFeB/MgO/CoFeB MTJs, the interface oxidation of the CoFeB layer is the main reason to cause a remarkable reduction of TMR, and the inserted Mg layer may play an important role in protecting Fe atoms from oxidation, and then increasing TMR.展开更多
There is nonradiative recombination in waveguide region owing to severe carrier leakage,which in turn reduces output power and wall-plug efficiency.In this paper,we designed a novel epitaxial structure,which suppresse...There is nonradiative recombination in waveguide region owing to severe carrier leakage,which in turn reduces output power and wall-plug efficiency.In this paper,we designed a novel epitaxial structure,which suppresses carrier leakage by inserting n-Ga_(0.55)In_(0.45)P and p-GaAs_(0.6)P_(0.4) between barriers and waveguide layers,respectively,to modulate the energy band structure and to increase the height of barrier.The results show that the leakage current density reduces by 87.71%,compared to traditional structure.The nonradiative recombination current density of novel structure reduces to 37.411 A/cm^(2),and the output power reaches 12.80 W with wall-plug efficiency of 78.24%at an injection current density 5 A/cm^(2) at room temperature.In addition,the temperature drift coefficient of center wavelength is 0.206 nm/℃at the temperature range from 5℃to 65℃,and the slope of fitted straight line of threshold current with temperature variation is 0.00113.The novel epitaxial structure provides a theoretical basis for achieving high-power laser diode.展开更多
Based on the experimental results, in which the fabricated error of the double layer frequency selective surface (FSS) leads to the transmission loss and the resonant frequency leaves away the design resonant frequenc...Based on the experimental results, in which the fabricated error of the double layer frequency selective surface (FSS) leads to the transmission loss and the resonant frequency leaves away the design resonant frequency, the inter-layer separation distance (ISD) and the unit cell aligning error (UAE) were used as main variables to study the transmission performance attenuation of the double layer FSS configuration. The numerical analysis model for ISD and UAE was established and also was used to simulate the ring unit cell FSS transmission performance by the finite element and periodic moment methods. The double layer ring aperture FSS configuration designed was used as the numerical model. As a result of the numerical analysis, it is shown that both ISD and UAE produce insertion transmission loss (ITL) and insertion phase distortion (IPD) directly. Furthermore, ISD results in more loss of the amplitude of the transmitted signal for the FSS than UAE. It is significant for the designer of the multiplayer FSS to assign the fabricated error of the FSS dielectric layers. The UAE introduces the insertion phase variation badly.展开更多
基金This work was financially supported by the National Natural Science Foundation of China (No. 50175004)
文摘Mixed Al-Si and Al-Si-SiC powders were employed as insert layers to reactive diffusion bond SiCp/6063 MMC （metal matrix composites）. The results show that SiCp/6063 MMC joints bonded by the insert layer of the mixed Al-Si powder have a dense joining layer with a typical hypoeutectic microstructtn＇e. Using the mixed Al-Si-SiC powder as the insert layer, SiCp/6063 MMC can be reactive diffusion bonded by a composite joint. Because of the SiC segregation, however, there are a number of porous zones in the joining layer, which results in the bad shear strength of the joints reactive diffusion bonded by the insert layer of the mixed A1-Si- SiC powder, even lower than that of the joints reactive diffusion bonded by the insert layer of the mixed Al-Si powder. Ti and Mg added in the insert layers obviously improve the strength of the joints reactive diffusion bonded by the insert layer of the mixed Al- Si-SiC powder, especially, Mg has a more obvious effect.
基金financially supported by the National Natural Science Foundation of China(Nos.51101012, 51271211,51331002,51371025,51371027,51471028 and 51571017)the National Key Scientific Research Projects of China(No. 2015CB921502)+1 种基金the Beijing Nova Program(No.Z141103001814039)the Fundamental Research Funds for the Central Universities(No. FRF-TP-14-002C1)
文摘Enhancement of post-annealing stability in Co/ Ni multilayers with perpendicular magnetic anisotropy （PMA） was obtained by inserting Au layers into Ni/Co interfaces. After annealing at 350 ℃, the effective mag- netic anisotropy density （Kef0 for Ta（3）/Pt（2）/[Co（0.3）/ Ni（0.6）/Au（0.3）]× 3/Co（0.3）/Pt（1）/Ta（3） （in nm） keeps at 0.48 × 105 J·m^-3. Scanning transmission electron micro- scopy-high-angle annular dark field （STEM-HAADF） analysis shows that the diffusion between Ni and Co layers is obstructed by the Au insertion layers among them, which is responsible for the post-annealing stability enhancement of the multilayers. Multilayers with Pt insertion layers were also investigated as reference samples in this work. Com- pared with Pt-layer-inserted Co/Ni multilayers, the Au insertion layers are found to bring seldom interfacial PMA to the multilayers, making it competitive in being employed to enhance the post-annealing stability of PMA Co/Ni multilayers which are used for magnetic random access memory devices （MRAM）.
基金X.H.gratefully acknowledges the financial support from the National Natural Science Foundation of China(Grant No.21902096)the Scientific Research Foundation of Shaanxi University of Science and Technology(Grant No.126061803)+1 种基金S.M.and B.X.thank the National Natural Science Foundation of China(Grant No.21972103)the Shanxi Provincial Key Innovative Research Team in Science and Technology(Grant No.201703D111026).
文摘The In segregation and its suppression in InGaAs/AlGaAs quantum well are investigated by using high-resolution x-ray diffraction(XRD)and photoluminescence(PL),combined with the state-of-the-art aberration corrected scanning transmission electron microscopy(Cs-STEM)techniques.To facility our study,we grow two multiple quantum wells(MQWs)samples,which are almost identical except that in sample B a thin GaAs layer is inserted in each of the InGaAs well and AlGaAs barrier layer comparing to pristine InGaAs/AlGaAs MQWs(sample A).Our study indeed shows the direct evidences that In segregation occurs in the InGaAs/AlGaAs interface,and the effect of the Ga As insertion layer on suppressing the segregation of In atoms is also demonstrated on the atomic-scale.Therefore,the atomic-scale insights are provided to understand the segregation behavior of In atoms and to unravel the underlying mechanism of the effect of GaAs insertion layer on the improvement of crystallinity,interface roughness,and further an enhanced optical performance of InGaAs/AlGaAs QWs.
基金Project supported by the National Key Research and Development Program of China(Grant No.2017yfb0405600)the National Natural Science Foundation of China(Grant Nos.61404091,61274113,61505144,51502203,and 51502204)the Natural Science Foundation of Tianjin City(Grant Nos.17JCYBJC16100 and 17JCZDJC31700)
文摘The impacts of HfOx inserting layer thickness on the electrical properties of the ZnO-based transparent resistance random access memory （TRRAM） device were investigated in this paper. The bipolar resistive switching behavior of a single ZnO film and bilayer HfOx/ZnO films as active layers for TRRAM devices was demonstrated. It was revealed that the bilayer TRRAM device with a 10-nm HfOx inserted layer had a more stable resistive switching behavior than other devices including the single layer device, as well as being forming free, and the transmittance was more than 80% in the visible region. For the HfOx/ZnO devices, the current conduction behavior was dominated by the space-charge-limited current mechanism in the low resistive state （LRS） and Schottky emission in the high resistive state （HRS）, while the mechanism for single layer devices was controlled by ohmic conduction in the LRS and Poole-Frenkel emission in the HRS.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.62104184,62234009,62090014,62188102,62104178,and 62104179)the Fundamental Research Funds for the Central Universities of China(Grant Nos.YJSJ23019,XJSJ23047,and ZDRC2002)+1 种基金the China National Postdoctoral Program for Innovative Talents(Grant No.BX20200262)the China Postdoctoral Science Foundation(Grant No.2021M692499)。
文摘GaN-based p-channel heterostructure field-effect transistors(p-HFETs)face significant constraints on on-state currents compared with n-channel high electron mobility transistors.In this work,we propose a novel double heterostructure which introduces an additional p-GaN insertion layer into traditional p-HFETs.The impact of the device structure on the hole densities and valence band energies of both the upper and lower channels is analyzed by using Silvaco TACD simulations,including the thickness of the upper AlGaN layer and the doping impurities and concentration in the GaN buffer layer,as well as the thickness and Mg-doping concentration in the p-GaN insertion layer.With the help of the p-GaN insertion layer,the C-doping concentration in the GaN buffer layer can be reduced,while the density of the two-dimensional hole gas in the lower channel is enhanced at the same time.This work suggests that a double heterostructure with a p-GaN insertion layer is a better approach to improve p-HFETs compared with those devices with C-doped buffer layer alone.
基金the National Natural Science Foundation of China under grant No.50175004
文摘Mixed Al-Si and Al-Cu powders were investigated as insert layers to reactive diffusion bond SiCp/6063 metal matrix composite(MMC).The results show that SiCp/6063 MMC joints bonded by the insert layers of the mixed Al-Si and Al-Cu powders have a dense joining layer of high quality.The mass transfer between the bonded materials and insert layers during bonding leads to the hypoeutectic microstructure of the joining layers bonded by both the mixed Al-Si and Al-Cu powders with eutectic composition.At fixed bonding time(temperature),the shear strength of the joints by both insert layers of the mixed Al-Si and Al-Cu powders increases with increasing the bonding temperature(time),but get maxima at bonding temperature 600℃(time 90 min).
文摘Mixed Al-Si, Al-Si-SiC and Al-Si-W powders were employed as insert layers to reactive diffusion bond SiC_p/6063 MMC. The results show that SiC_p/6063 MMC joints bonded by the insert layer of the mixed Al-Si powder have a dense joining layer with a typical hypoeutectic microstructure. Using mixed Al-Si-SiC powder as insert layer, SiC_p/6063 MMC can be reactive diffusion bonded by a composite joint. Because of the SiC segregations, however, there are a number of porous zones in the joining layer, which results in the low shear strength of the joints, even lower than that of joints reactive diffusion bonded by the insert layer of mixed Al-Si powder. The W added into the insert layer of Al-Si-W nearly all reacts with Al to form intermetallic WAl_ 12 during bonding. The reaction between the W and Al facilitates to form a dense joint of high quality, and the formed intermetallic WAl_ 12 has a reinforcing effect on the joints, which lead to the high shear strength of the joints. In general, under the condition of fixed bonding time (temperature), the shear strengths of the joints increase as the bonding temperature (time) increases, but tend to a maximum at bonding temperature of 600℃(time 90min).
基金Supported by the National Defense Advance Research Foundation under Grant No 9140A08XXXXXX0DZ106the Basic Research Program of Ministry of Education of China under Grant No JY10000925005+2 种基金the Scientific Research Program Funded by Shaanxi Provincial Education Department under Grant No 11JK0912the Scientific Research Foundation of Xi'an University of Science and Technology under Grant No 2010011the Doctoral Research Startup Fund of Xi'an University of Science and Technology under Grant No 2010QDJ029
文摘To study the influence of CoFeB/MgO interface on tunneling magnetoresistance （TMR）, different structures of magnetic tunnel junctions （MTJs） are successfully prepared by the magnetron sputtering technique and characterized by atomic force microscopy, a physical property measurement system, x-ray photoelectron spectroscopy, and transmission electron microscopy. The experimental results show that TMR of the CoFeB/Mg/MgO/CoFeB structure is evidently improved in comparison with the CoFeB/MgO/CoFeB structure because the inserted Mg layer prevents Fe-oxide formation at the CoFeB/MgO interface, which occurs in CoFeB/MgO/CoFeB MTJs. The inherent properties of the CoFeB/MgO/CoFeB, CoFeB/Fe-oxide/MgO/CoFeB and CoFeB/Mg/MgO/CoFeB MTJs are simulated by using the theories of density functions and non-equilibrium Green functions. The simulated results demonstrate that TMR of CoFeB/Fe-oxide/MgO/CoFeB MTJs is severely decreased and is only half the value of the CoFeB/Mg/MgO/CoFeB MTJs. Based on the experimental results and theoretical analysis, it is believed that in CoFeB/MgO/CoFeB MTJs, the interface oxidation of the CoFeB layer is the main reason to cause a remarkable reduction of TMR, and the inserted Mg layer may play an important role in protecting Fe atoms from oxidation, and then increasing TMR.
文摘There is nonradiative recombination in waveguide region owing to severe carrier leakage,which in turn reduces output power and wall-plug efficiency.In this paper,we designed a novel epitaxial structure,which suppresses carrier leakage by inserting n-Ga_(0.55)In_(0.45)P and p-GaAs_(0.6)P_(0.4) between barriers and waveguide layers,respectively,to modulate the energy band structure and to increase the height of barrier.The results show that the leakage current density reduces by 87.71%,compared to traditional structure.The nonradiative recombination current density of novel structure reduces to 37.411 A/cm^(2),and the output power reaches 12.80 W with wall-plug efficiency of 78.24%at an injection current density 5 A/cm^(2) at room temperature.In addition,the temperature drift coefficient of center wavelength is 0.206 nm/℃at the temperature range from 5℃to 65℃,and the slope of fitted straight line of threshold current with temperature variation is 0.00113.The novel epitaxial structure provides a theoretical basis for achieving high-power laser diode.
文摘Based on the experimental results, in which the fabricated error of the double layer frequency selective surface (FSS) leads to the transmission loss and the resonant frequency leaves away the design resonant frequency, the inter-layer separation distance (ISD) and the unit cell aligning error (UAE) were used as main variables to study the transmission performance attenuation of the double layer FSS configuration. The numerical analysis model for ISD and UAE was established and also was used to simulate the ring unit cell FSS transmission performance by the finite element and periodic moment methods. The double layer ring aperture FSS configuration designed was used as the numerical model. As a result of the numerical analysis, it is shown that both ISD and UAE produce insertion transmission loss (ITL) and insertion phase distortion (IPD) directly. Furthermore, ISD results in more loss of the amplitude of the transmitted signal for the FSS than UAE. It is significant for the designer of the multiplayer FSS to assign the fabricated error of the FSS dielectric layers. The UAE introduces the insertion phase variation badly.
