Infrared-transparent conductors have attracted considerable attention due to their potential applications in electromagnetic shielding,infrared sensors,and photovoltaic devices.However,most known materials face the cr...Infrared-transparent conductors have attracted considerable attention due to their potential applications in electromagnetic shielding,infrared sensors,and photovoltaic devices.However,most known materials face the critical challenge of balancing high infrared transmittance with high electrical conductivity across the broad infrared spectral band(2.5-25μm).While ultra-thin indium tin oxide(ITO)films have been demonstrated to exhibit superior infrared transmittance,their inherent low electrical conductivity necessitates additional enhancement strategies.This study systematically investigates the effects of oxygen vacancy concentration regulation and ultra-thin copper capping layer integration on the infrared optoelectronic properties of 20 nm-thick ITO films.A fundamental trade-off is revealed in ITO films that increased oxygen vacancy content enhances the electrical conductivity while compromising the infrared transmittance.Meanwhile,following the introduction of a Cu capping layer,the Cu/ITO system exhibits opposing dependencies of infrared transmittance and electrical conductivity on the capping layer thickness,with an optimum thickness of~3 nm.Finally,by constructing a Cu(3 nm)/ITO(20 nm)heterostructure with varying oxygen vacancy content,we demonstrate the combined effect of the ultra-thin Cu capping layer and moderate oxygen vacancy content on optimizing the carrier transport network.This configuration simultaneously minimizes surface/interfacial reflection and absorption losses,achieving high infrared transmittance(0.861)and a low sheet resistance of 400 W/sq.Our findings highlight the critical role of the combined effect of metal/oxide heterostructure design and defect engineering in optimizing infrared-transparent conductive properties.展开更多
A transparent energy storage device is an essential component for transparent electronics.The increasing demand for high-power devices stimulates the development of transparent supercapacitors with high power density....A transparent energy storage device is an essential component for transparent electronics.The increasing demand for high-power devices stimulates the development of transparent supercapacitors with high power density.A transparent electrode for such supercapacitors can be assembled via the electrophoretic deposition of an active material powder with a binder onto a transparent substrate.The properties of the binder critically influence the electrochemical behavior and performance of the resulting electrode.Ethyl cellulose(EC)is known as an eco-friendly,transparent,flexible,and inexpensive material.Here,we fabricated an electrode film with EC binder via electrophoretic deposition on an indium tin oxide(ITO)substrate instead of using the conventional polytetrafluoroethylene(PTFE)binder.The assembled electrodes with EC and PTFE were compared to investigate the feasibility of EC as a binder from different perspectives,including homogeneity,wettability,electrochemical behavior,and mechanical stability.The EC enabled the formation of a homogeneous film composed of smaller particles and with a higher specific capacitance compared with films prepared with PTFE.The annealing improved the adhesion strength of the EC because of its glass transition;however,its hydrophobic nature limited utilization of the active material for charge storage.Subsequent electrochemical activation improved the wettability of the electrode,resulting in an increased capacitance of 60 F g^(-1).Furthermore,even with the lower wettability of EC compared with that of PTFE,better rate performance was possible with the EC electrode.The increased mechanical stability after the annealing process ensured an excellent cycle life of 95%capacitance retention for 15,000 cycles.展开更多
The application of transparent conducting indium-tin-oxide （ITO） film as full front electrode replacing the conven- tional bus-bar metal electrode in III-V compound GalnP solar cell was proposed. A high-quality, non...The application of transparent conducting indium-tin-oxide （ITO） film as full front electrode replacing the conven- tional bus-bar metal electrode in III-V compound GalnP solar cell was proposed. A high-quality, non-rectifying contact between ITO and 10 nm N＋-GaAs contact layer was formed, which is benefiting from a high carrier concentration of the terrilium-doped N＋-GaAs layer, up to 2×10^19 cm^-3. A good device performance of the GalnP solar cell with the ITO electrode was observed. This result indicates a great potential of transparent conducting films in the future fabrication of larger area flexible III-V solar cell.展开更多
Isothermal decomposition process of chemically transforming indium tin oxide（ITO） powders into indium（III） hydroxide powders was investigated. Two types of powders were analyzed, i.e., non-activated and mechanical...Isothermal decomposition process of chemically transforming indium tin oxide（ITO） powders into indium（III） hydroxide powders was investigated. Two types of powders were analyzed, i.e., non-activated and mechanically activated. It has been found that in the case of activated sample, shorter induction periods appear, which permits growth of smaller crystals, while in the case of non-activated sample, long induction periods appear, characterized by the growth of larger crystals. DAEM approach has shown that decomposition processes of non-activated and mechanically activated samples can be described by contracting volume model with a linear combination of two different density distribution functions of apparent activation energies（Ea）, and with first-order model, with a single symmetrical density distribution function of Ea, respectively. It was established that specific characteristics of particles not only affect the mechanism of decomposition processes, but also have the significant impact on thermodynamic properties.展开更多
Tin-doped Indium Oxide （ITO） has been successfully prepared via solvothermal method with a mixture of Indium（Ill） acetylacetonate and Tin（IV） bis（acetylacetonate）dichioride in oleyamine solvent under the condi...Tin-doped Indium Oxide （ITO） has been successfully prepared via solvothermal method with a mixture of Indium（Ill） acetylacetonate and Tin（IV） bis（acetylacetonate）dichioride in oleyamine solvent under the condition of the different reaction time from 12 h to 48 h for the first time. The morphology, phase composition and particle size of the ITO powder were characterized by TEM and XRD. Two significant properties required for ITO samples to become noncarbon support for Pt in PEMFCs including specific surface area and electrical conductivity were studied.展开更多
The present work mainly describes the technology for preparing indium-tin oxide （ITO） targets by cold isostatic pressing （CIP） and normal pressure sintering process. ITO powders were produced by chemical co-precip...The present work mainly describes the technology for preparing indium-tin oxide （ITO） targets by cold isostatic pressing （CIP） and normal pressure sintering process. ITO powders were produced by chemical co-precipitation and shaped into an ITO green compact with a relative density of 60% by CIP under 300 MPa. Then, an ITO target with a relative density larger than 99.6% was obtained by sintering this green compact at 1550℃ for 8 h. The effects of forming pressure, sintering temperature and sintering time on the density of the target were inves- tigated. Also, a discussion was made on the sintering atmosphere.展开更多
Indium tin oxide （ITO） nanoparticles with crystallite size of 12.6 nm and specific surface area of 45.7 m 2 ·g-1 were synthesized by co-precipitation method.The indium solution was obtained by dissolving metal ...Indium tin oxide （ITO） nanoparticles with crystallite size of 12.6 nm and specific surface area of 45.7 m 2 ·g-1 were synthesized by co-precipitation method.The indium solution was obtained by dissolving metal indium in HNO3.The tin solution was obtained by dissolving metal tin in HNO3 and followed by stabilizing with citric acid.The free of chlorine ions in the synthesis process brought several advantages：shortening the synthesis time,decreasing the particle agglomeration,decreasing the chlorine content in the ITO nanoparticles and improving the particle sinterability.This is the first time to report the synthesis of ITO nanoparticles free from chlorine contamination without using the expensive metal alkoxides as starting materials.展开更多
Indium tin oxide （ITO） thin films were prepared on alumina ceramic substrates by radio frequency magnetron sputtering. The samples were subsequently annealed in air at temperatures ranging from 500 to 1,100 ℃ for 1...Indium tin oxide （ITO） thin films were prepared on alumina ceramic substrates by radio frequency magnetron sputtering. The samples were subsequently annealed in air at temperatures ranging from 500 to 1,100 ℃ for 1 h. The influences of the annealing temperature on the microstructure and electrical properties of the ITO thin films were investigated, and the results indicate that the as-deposited ITO thin films are amorphous in nature. All samples were crystallized by annealing at 500 ~C. As the annealing temperature increases, the predominant orientation shifts from （222） to （400）. The carrier concentration decreases initially and then increases when the annealing temperature rises beyond 1,000 ℃. The resistivity of the ITO thin films increases smoothly as the annealing temperature increases to just below 900 ℃. Beyond 900 ℃, however, the resistivity of the films increases sharply. The annealing temperature has a significant effect on the stability of the ITO/Pt thin film thermocouples （TFTCs）. TFTCs annealed at 1,000 ℃ show improved high- temperature stability and Seebeck coefficients of up to 77.73 pV/℃.展开更多
Tin-doped indium oxide （ITO） thin films were prepared using conventional radio frequency （RF） planar magnetron sputtering equipped with IR irradiation using a ceramic target of In2O3/SnO2 with a mass ratio of 1：1...Tin-doped indium oxide （ITO） thin films were prepared using conventional radio frequency （RF） planar magnetron sputtering equipped with IR irradiation using a ceramic target of In2O3/SnO2 with a mass ratio of 1：1 at various IR irradiation temperatures T1 （from room temperature to 400℃）. The refractive index, deposited ratio, and resistivity are functions of the sputtering Ar gas pressure. The microstructure of ITO thin films is related to IR T1, the crystalline seeds appear at T1= 300℃, and the films are amorphous at the temperature ranging from 27℃ to 400℃. AFM investigation shows that the roughness value of peak-valley of ITO thin film （Rp-v） and the surface microstructure of rio thin films have a close relation with T1. The IR irradiation results in a widening value of band-gap energy due to Burstein-Moss effect and the maximum visible transmittance shifts toward a shorter wavelength along with a decrease in the film＇s refractive index. The plasma wavelength and the refractive index of ITO thin films are relative to the T1. XPS investigation shows that the photoelectrolytic properties can be deteriorated by the sub-oxides. The deterioration can be decreased by increasing the oxygen flow rote （fo2）, and the mole ratio of Sn/In in the samples reduces with an increase info2.展开更多
Microbial cellulose （MC） membranes produced by Acetobacter xylinum NUST4.1,were used as flexible substrates for the fabrication of transparent indium tin oxide （ITO） electrodes.Transparent and conductive ITO thin ...Microbial cellulose （MC） membranes produced by Acetobacter xylinum NUST4.1,were used as flexible substrates for the fabrication of transparent indium tin oxide （ITO） electrodes.Transparent and conductive ITO thin films were deposited on MC membrane at room temperature using radio frequency （RF） magnetron sputtering.The optimum ITO deposition conditions were achieved by examining crystalline structure,surface morphology and op-toelectrical characteristics with X-ray diffraction （XRD）,scanning electron microscopy （SEM）,atomic force mi-croscopy （AFM）,and UV spectroscopy.The sheet resistance of the samples was measured with a four-point probe and the resistivity of the film was calculated.The results reveal that the preferred orientation of the deposited ITO crystals is strongly dependent upon with oxygen content （O2/Ar,volume ratio） in the sputtering chamber.And the ITO crystalline structure directly determines the conductivity of ITO-deposited films.High conductive [sheet resis-tance ～120 Ω·square-1 （Ω·sq-1）] and transparent （above 76%） ITO thin films （240 nm thick） were obtained with a moderate sputtering power （about 60 W） and with an oxygen flow rate of 0.25 ml·min-1 （sccm） during the deposi-tion.These results show that the ITO-MC electrodes can find their potential application in optoelectrical devices.展开更多
Indium tin oxide（ITO）thin films（100±10nm）were deposited on PC（polycarbonate）and glass substrates by rf（radio-frequency）mannetron spuutering.The oxygen content of the ITO films was changed by variation of ...Indium tin oxide（ITO）thin films（100±10nm）were deposited on PC（polycarbonate）and glass substrates by rf（radio-frequency）mannetron spuutering.The oxygen content of the ITO films was changed by variation of the sputtering gas composition.All the other deposition parameters were kept constant.The sheet resistance.optical transmittance and microstructure of ITO films were investigated using a four-point probe.spectrophotometer,X-ray diffractometer（XRD）and atomic force microscope（AFM）.Sheet resistances for the ITO films with optical transmittance more than 75% on PC substrates varied from 40Ω/cm^2 to more than 104 Ω/cm^2 with increasing oxygen partial pressure from O to about 2%.The same tendeney of sheet resistances increasing with increasing oxygen partial pressure was observed on glass substrates.The X-ray diffraction data indicated polycrystalline filns with grain orientations predominantly along（440）and （422）directions.The intensities of （440）and （422）peaks increased slightly with the increase of oxygen partial pressure both on PC and glass substrates.The AFM images show that the ITO films on PC substrates were dense and uniform.The average grain size of the films was about 40nm.展开更多
The electrical and optical properties of the indium tin oxide （ITO）/epoxy composite exhibit dramatic variations as functions of the ITO composition and ITO particle size. Sharp increases in the conductivity in the v...The electrical and optical properties of the indium tin oxide （ITO）/epoxy composite exhibit dramatic variations as functions of the ITO composition and ITO particle size. Sharp increases in the conductivity in the vicinity of a critical volume fraction have been found within the framework of percolation theory. A conductive and insulating transition model is extracted by the ITO particle network in the SEM image, and verified by the resistivity dependence on the temperature. The dependence of the optical transmittance on the particle size was studied. Further decreasing the ITO particle size could further improve the percolation threshold and light transparency of the composite film.展开更多
Indium tin oxide(ITO) thin film was deposited on glass substrate by means of vacuum evaporation technique and annealed at 200 ℃, 300℃ and 400 ℃ in air for 1 h. The characterization and properties of the deposited f...Indium tin oxide(ITO) thin film was deposited on glass substrate by means of vacuum evaporation technique and annealed at 200 ℃, 300℃ and 400 ℃ in air for 1 h. The characterization and properties of the deposited film samples were analyzed by X-ray diffraction(XRD), scanning electron microscopy(SEM), and UV-VIS-NIR spectroscopy techniques. From the XRD patterns, it was found that the deposited thin film was of crystalline at an annealing temperature of 400℃. The crystalline phase was indexed as cubic structure with lattice constant and crystallite size of 0.511 nm and 40 nm, respectively. The SEM images showed that the films exhibited uniform surface morphology with well-defined spherical grains. The optical transmittance of ITO thin film annealed at 400 ℃ was improved from 44% to 84% in the wavelength range from 250 nm to 2 100 nm and an optical band gap was measured as 3.86 e V. Hall effect measurement was used to measure the resistivity and conductivity of the prepared film.展开更多
Inorganic buffer layers such as SiO2 or TiO2 and transparent conductive indium-tin-oxide （ITO） films were prepared on polyethylene terephthalate （PET） substrates by ion assisted deposition （IAD） at room temperat...Inorganic buffer layers such as SiO2 or TiO2 and transparent conductive indium-tin-oxide （ITO） films were prepared on polyethylene terephthalate （PET） substrates by ion assisted deposition （IAD） at room temperature, and the effects of SiO2 and TiOzon the bending resistance performance of flexible ITO films were investigated. The results show that ITO films with SiO2 or TiO2 buffer layer have better resistance stabilities compared to ones without the buffer layer when the ITO films are inwards bent at a bending radius more than 1.2 cm and when the ITO films are outwards bent at a bending radius from 0.8 cm to 1.2 cm. 1TO films with SiO2 buffer layer have better resistance sta- bilities compared to ones with TiO2 buffer layer after the ITO fdms are bent several hundreds of cycles at the same bending radius, for the adhesion of SiO2 is stronger than that of TiO2. The compressive stress resulted from inward bending leads to the formation of more defects in the ITO films compared with the tensile stress arising from outward bending. SiO2 and TiO2 buffer layers can effectively improve the crystallinity of ITO films in （400）, （440） directions.展开更多
The dependence of the performance of organic light-emitting devices（OLEDs） on the sheet resistance of indiumtin-oxide（ITO） anodes was investigated by measuring the steady state current density brightness voltage c...The dependence of the performance of organic light-emitting devices（OLEDs） on the sheet resistance of indiumtin-oxide（ITO） anodes was investigated by measuring the steady state current density brightness voltage characteristics and the electroluminescent spectra. The device with a higher sheet resistance anode shows a lower current density, a lower brightness level, and a higher operation voltage. The electroluminescence（EL） efficiencies of the devices with the same structure but different ITO anodes show more complicated differences. Furthermore, the shift of the light-emitting zone toward the anode was found when an anode with a higher sheet resistance was used. These performance differences are discussed and attributed to the reduction of hole injection and the increase in voltage drop over ITO anode with the increase in sheet resistance.展开更多
Hexagonal structure indium tin oxide（ITO）nanopowders were prepared by a solvothermal process at only 175 ℃ for 24 h and post-annealing at 400 ℃, using metal indium and SnCl4·5 H2 O as the raw materials. The m...Hexagonal structure indium tin oxide（ITO）nanopowders were prepared by a solvothermal process at only 175 ℃ for 24 h and post-annealing at 400 ℃, using metal indium and SnCl4·5 H2 O as the raw materials. The morphology, crystal structures and structure defects of products were, respectively, analyzed by scanning electron microscopy（SEM）, X-ray diffraction（XRD） and confocal microprobe Raman system, the elemental state was investigated by X-ray photoelectron spectroscopy（XPS）, and the optical properties were carried out by ultraviolet-visible（UV-Vis） and photoluminescence（PL） spectrophotometers. The results show that the products are hexagonal structure with a particles size of 28-41 nm; the morphology of products consists of sphere and irregular cubic.When pH values of solution increase, the content of oxygen vacancies increases and the optical band gap varies from3.59 to 3.78 eV. The products exhibit strong emission at417 nm with an excitation of 370 nm, and the PL intensity of samples increases with pH values increasing. Contrasting to cubic structure ITO powder, the hexagonal structure ITO has narrower optical band gap and higher PL intensity under the same excitation wavelength.展开更多
Niobium-doped indium tin oxide （ITO：Nb） thin films are fabricated on glass substrates by radio frequency （RF） magnetron sputtering at different temperatures. Structural, electrical and optical properties of the f...Niobium-doped indium tin oxide （ITO：Nb） thin films are fabricated on glass substrates by radio frequency （RF） magnetron sputtering at different temperatures. Structural, electrical and optical properties of the films are investigated using X-ray diffraction （XRD）, atomic force microscopy （AFM）, ultraviolet-visible （UV-VIS） spectroscopy and electrical measurements. XRD patterns show that the preferential orientation ofpolycrystalline structure changes from （400） to （222） crystal plane, and the crystallite size increases with the increase of substrate temperature. AFM analyses reveal that the film is very smooth at low temperature. The root mean square （RMS） roughness and the average roughness are 2.16 nm and 1.64 nm, respectively. The obtained lowest resistivity of the films is 1.2 × 10^4 Ω-cm, and the resistivity decreases with the increase of substrate temperature. The highest Hall mobility and carrier concentration are 16.5 cmVV.s and 1.88× 10^21 cm^-3, respectively. Band gap energy of the films depends on substrate temperature, which is varied from 3.49 eV to 3.63 eV.展开更多
Indium tin oxide （ITO） ultrathin films were prepared on glass substrate by DC （direct current） magnetron sputtering technique with the assistance of H2O vapor to avoid potential surface damage. The film properties...Indium tin oxide （ITO） ultrathin films were prepared on glass substrate by DC （direct current） magnetron sputtering technique with the assistance of H2O vapor to avoid potential surface damage. The film properties were characterized by X-ray diffraction （XRD） technique, four-point probe method and spectrophotometer. The results show that the deposited ITO film with introduced H2O during sputtering process was almost amorphous. The average visible light transmission of 100 nm ITO film was around 85% and square resistivity was below 80 Ω/square. The film was used as the transparent anode to fabricate an inverted top-emitting organic light-emitting diodes （IT-OLEDs） with the structure of glass substrate/Alq3 （40 nm）/NPB （15 nm）/CuPc （x nm）/ITO anode （100 nm）, where the film thickness of CuPc was optimized. It was found that the luminance of this IT-OLEDs was improved from 25 cd/m^2 to more than 527 cd/m^2 by increasing the thickness of CuPc, and luminance efficiency of 0.24 lm/W at 100 cd/m^2 was obtained, which indicated that the optimized thickness of CuPc layer was around 15 nm.展开更多
Indium tin oxide(ITO)nanopowders were prepared by a modified chemical co-precipitation process.The influence of different SnO2 contents on the decomposition behavior of ITO precursors,and on the phase and morphology o...Indium tin oxide(ITO)nanopowders were prepared by a modified chemical co-precipitation process.The influence of different SnO2 contents on the decomposition behavior of ITO precursors,and on the phase and morphology of ITO precursors and ITO nanopowders were studied by X-ray diffractometry,transmission electron microscopy and differential thermal and thermogravimetry analysis methods.The TG-DSC curves show that the decomposition process of precursor precipitation is completed when the temperature is close to 600 ℃and the end temperature of decompositionis somewhat lower when the doping amount of SnO2 is increased.The XRD patterns indicate that the solubility limit of Sn4+ relates directly to the calcining temperature. When being calcined at 700℃,a single phase ITO powder with 15%SnO2(mass fraction)can be obtained.But,when the calcining temperature is higher than 800℃,the phase of SnO2 will appear in ITO nanopowders which contain more than 10%SnO2.The particle size of the ITO nanopowders is 15-25 nm.The ITO nanoparticles without Sn have a spherical shape,but their morphology moves towards an irregular shape when being doped with Sn4+.展开更多
Spherical indium tin oxide （ITO） nanoparticles were synthesized by combustion method using citric acid as fuel and nitrates as oxidizer. The obtained ITO nanoparticles were characterized by TG-DSC, FT-IR, XRD, BET, ...Spherical indium tin oxide （ITO） nanoparticles were synthesized by combustion method using citric acid as fuel and nitrates as oxidizer. The obtained ITO nanoparticles were characterized by TG-DSC, FT-IR, XRD, BET, TEM, and SEM. The ITO nanoparticles grew steadily with the increase of heat treatment temperature, and the 700~C calcined particles had a crystallite size of 25.3 nm and a specific surface area of 26.1 m2.g i The avoidance of chlorine ions in the synthesis process decreases particle agglomeration and promotes powder densification. The 900~C sintered pellet had a density of 67.6% of theoretical density （TD） and increased steadily to 97.3% for the 1400℃ sintered ceramics, respectively.展开更多
基金supported by the National Key R&D Program of China(Grant No.2022YFB3806300).
文摘Infrared-transparent conductors have attracted considerable attention due to their potential applications in electromagnetic shielding,infrared sensors,and photovoltaic devices.However,most known materials face the critical challenge of balancing high infrared transmittance with high electrical conductivity across the broad infrared spectral band(2.5-25μm).While ultra-thin indium tin oxide(ITO)films have been demonstrated to exhibit superior infrared transmittance,their inherent low electrical conductivity necessitates additional enhancement strategies.This study systematically investigates the effects of oxygen vacancy concentration regulation and ultra-thin copper capping layer integration on the infrared optoelectronic properties of 20 nm-thick ITO films.A fundamental trade-off is revealed in ITO films that increased oxygen vacancy content enhances the electrical conductivity while compromising the infrared transmittance.Meanwhile,following the introduction of a Cu capping layer,the Cu/ITO system exhibits opposing dependencies of infrared transmittance and electrical conductivity on the capping layer thickness,with an optimum thickness of~3 nm.Finally,by constructing a Cu(3 nm)/ITO(20 nm)heterostructure with varying oxygen vacancy content,we demonstrate the combined effect of the ultra-thin Cu capping layer and moderate oxygen vacancy content on optimizing the carrier transport network.This configuration simultaneously minimizes surface/interfacial reflection and absorption losses,achieving high infrared transmittance(0.861)and a low sheet resistance of 400 W/sq.Our findings highlight the critical role of the combined effect of metal/oxide heterostructure design and defect engineering in optimizing infrared-transparent conductive properties.
基金supported by the National Research Foundation of Korea(NRF)grant funded by the Korean government(Ministry of Science,ICT&Future Planning)(NRF-2017R1C1B2005470)(NRF-2018R1A4A1022260)。
文摘A transparent energy storage device is an essential component for transparent electronics.The increasing demand for high-power devices stimulates the development of transparent supercapacitors with high power density.A transparent electrode for such supercapacitors can be assembled via the electrophoretic deposition of an active material powder with a binder onto a transparent substrate.The properties of the binder critically influence the electrochemical behavior and performance of the resulting electrode.Ethyl cellulose(EC)is known as an eco-friendly,transparent,flexible,and inexpensive material.Here,we fabricated an electrode film with EC binder via electrophoretic deposition on an indium tin oxide(ITO)substrate instead of using the conventional polytetrafluoroethylene(PTFE)binder.The assembled electrodes with EC and PTFE were compared to investigate the feasibility of EC as a binder from different perspectives,including homogeneity,wettability,electrochemical behavior,and mechanical stability.The EC enabled the formation of a homogeneous film composed of smaller particles and with a higher specific capacitance compared with films prepared with PTFE.The annealing improved the adhesion strength of the EC because of its glass transition;however,its hydrophobic nature limited utilization of the active material for charge storage.Subsequent electrochemical activation improved the wettability of the electrode,resulting in an increased capacitance of 60 F g^(-1).Furthermore,even with the lower wettability of EC compared with that of PTFE,better rate performance was possible with the EC electrode.The increased mechanical stability after the annealing process ensured an excellent cycle life of 95%capacitance retention for 15,000 cycles.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61534008,61376081,and 61404157)the Application Foundation of Suzhou,China(Grant No.SYG201437)
文摘The application of transparent conducting indium-tin-oxide （ITO） film as full front electrode replacing the conven- tional bus-bar metal electrode in III-V compound GalnP solar cell was proposed. A high-quality, non-rectifying contact between ITO and 10 nm N＋-GaAs contact layer was formed, which is benefiting from a high carrier concentration of the terrilium-doped N＋-GaAs layer, up to 2×10^19 cm^-3. A good device performance of the GalnP solar cell with the ITO electrode was observed. This result indicates a great potential of transparent conducting films in the future fabrication of larger area flexible III-V solar cell.
基金partially supported by the Ministry of Science and Environmental Protection of Serbia under the Project 172015
文摘Isothermal decomposition process of chemically transforming indium tin oxide（ITO） powders into indium（III） hydroxide powders was investigated. Two types of powders were analyzed, i.e., non-activated and mechanically activated. It has been found that in the case of activated sample, shorter induction periods appear, which permits growth of smaller crystals, while in the case of non-activated sample, long induction periods appear, characterized by the growth of larger crystals. DAEM approach has shown that decomposition processes of non-activated and mechanically activated samples can be described by contracting volume model with a linear combination of two different density distribution functions of apparent activation energies（Ea）, and with first-order model, with a single symmetrical density distribution function of Ea, respectively. It was established that specific characteristics of particles not only affect the mechanism of decomposition processes, but also have the significant impact on thermodynamic properties.
文摘Tin-doped Indium Oxide （ITO） has been successfully prepared via solvothermal method with a mixture of Indium（Ill） acetylacetonate and Tin（IV） bis（acetylacetonate）dichioride in oleyamine solvent under the condition of the different reaction time from 12 h to 48 h for the first time. The morphology, phase composition and particle size of the ITO powder were characterized by TEM and XRD. Two significant properties required for ITO samples to become noncarbon support for Pt in PEMFCs including specific surface area and electrical conductivity were studied.
基金supported by the National High-Tech Research and Development Program of China(No. 2004AA303542)
文摘The present work mainly describes the technology for preparing indium-tin oxide （ITO） targets by cold isostatic pressing （CIP） and normal pressure sintering process. ITO powders were produced by chemical co-precipitation and shaped into an ITO green compact with a relative density of 60% by CIP under 300 MPa. Then, an ITO target with a relative density larger than 99.6% was obtained by sintering this green compact at 1550℃ for 8 h. The effects of forming pressure, sintering temperature and sintering time on the density of the target were inves- tigated. Also, a discussion was made on the sintering atmosphere.
基金supported by the Ph.D. programs Foundation of Ministry of Education of China (No.200802511022)
文摘Indium tin oxide （ITO） nanoparticles with crystallite size of 12.6 nm and specific surface area of 45.7 m 2 ·g-1 were synthesized by co-precipitation method.The indium solution was obtained by dissolving metal indium in HNO3.The tin solution was obtained by dissolving metal tin in HNO3 and followed by stabilizing with citric acid.The free of chlorine ions in the synthesis process brought several advantages：shortening the synthesis time,decreasing the particle agglomeration,decreasing the chlorine content in the ITO nanoparticles and improving the particle sinterability.This is the first time to report the synthesis of ITO nanoparticles free from chlorine contamination without using the expensive metal alkoxides as starting materials.
基金financially supported by the National Natural Science Foundation of China (No.61223002)the State Key Laboratory of Electronic Thin Films and Integrated Devices Foundation of China (No.KFJJ201206)Science and Technology Innovation Foundation of Sichuan (No.2012ZZ020)
文摘Indium tin oxide （ITO） thin films were prepared on alumina ceramic substrates by radio frequency magnetron sputtering. The samples were subsequently annealed in air at temperatures ranging from 500 to 1,100 ℃ for 1 h. The influences of the annealing temperature on the microstructure and electrical properties of the ITO thin films were investigated, and the results indicate that the as-deposited ITO thin films are amorphous in nature. All samples were crystallized by annealing at 500 ~C. As the annealing temperature increases, the predominant orientation shifts from （222） to （400）. The carrier concentration decreases initially and then increases when the annealing temperature rises beyond 1,000 ℃. The resistivity of the ITO thin films increases smoothly as the annealing temperature increases to just below 900 ℃. Beyond 900 ℃, however, the resistivity of the films increases sharply. The annealing temperature has a significant effect on the stability of the ITO/Pt thin film thermocouples （TFTCs）. TFTCs annealed at 1,000 ℃ show improved high- temperature stability and Seebeck coefficients of up to 77.73 pV/℃.
基金This work was financially supported by the National Defence Science Council of China (NO. 5141002040JW0504) and the Excellent Ph.D Thesis Foundation of Huazhong University of Science and Technology (No. HUST2004-39).
文摘Tin-doped indium oxide （ITO） thin films were prepared using conventional radio frequency （RF） planar magnetron sputtering equipped with IR irradiation using a ceramic target of In2O3/SnO2 with a mass ratio of 1：1 at various IR irradiation temperatures T1 （from room temperature to 400℃）. The refractive index, deposited ratio, and resistivity are functions of the sputtering Ar gas pressure. The microstructure of ITO thin films is related to IR T1, the crystalline seeds appear at T1= 300℃, and the films are amorphous at the temperature ranging from 27℃ to 400℃. AFM investigation shows that the roughness value of peak-valley of ITO thin film （Rp-v） and the surface microstructure of rio thin films have a close relation with T1. The IR irradiation results in a widening value of band-gap energy due to Burstein-Moss effect and the maximum visible transmittance shifts toward a shorter wavelength along with a decrease in the film＇s refractive index. The plasma wavelength and the refractive index of ITO thin films are relative to the T1. XPS investigation shows that the photoelectrolytic properties can be deteriorated by the sub-oxides. The deterioration can be decreased by increasing the oxygen flow rote （fo2）, and the mole ratio of Sn/In in the samples reduces with an increase info2.
基金Supported by the National Natural Science Foundation of China （10776014） Nanjing University of Science and Technology （NUST） Research Funding
文摘Microbial cellulose （MC） membranes produced by Acetobacter xylinum NUST4.1,were used as flexible substrates for the fabrication of transparent indium tin oxide （ITO） electrodes.Transparent and conductive ITO thin films were deposited on MC membrane at room temperature using radio frequency （RF） magnetron sputtering.The optimum ITO deposition conditions were achieved by examining crystalline structure,surface morphology and op-toelectrical characteristics with X-ray diffraction （XRD）,scanning electron microscopy （SEM）,atomic force mi-croscopy （AFM）,and UV spectroscopy.The sheet resistance of the samples was measured with a four-point probe and the resistivity of the film was calculated.The results reveal that the preferred orientation of the deposited ITO crystals is strongly dependent upon with oxygen content （O2/Ar,volume ratio） in the sputtering chamber.And the ITO crystalline structure directly determines the conductivity of ITO-deposited films.High conductive [sheet resis-tance ～120 Ω·square-1 （Ω·sq-1）] and transparent （above 76%） ITO thin films （240 nm thick） were obtained with a moderate sputtering power （about 60 W） and with an oxygen flow rate of 0.25 ml·min-1 （sccm） during the deposi-tion.These results show that the ITO-MC electrodes can find their potential application in optoelectrical devices.
文摘Indium tin oxide（ITO）thin films（100±10nm）were deposited on PC（polycarbonate）and glass substrates by rf（radio-frequency）mannetron spuutering.The oxygen content of the ITO films was changed by variation of the sputtering gas composition.All the other deposition parameters were kept constant.The sheet resistance.optical transmittance and microstructure of ITO films were investigated using a four-point probe.spectrophotometer,X-ray diffractometer（XRD）and atomic force microscope（AFM）.Sheet resistances for the ITO films with optical transmittance more than 75% on PC substrates varied from 40Ω/cm^2 to more than 104 Ω/cm^2 with increasing oxygen partial pressure from O to about 2%.The same tendeney of sheet resistances increasing with increasing oxygen partial pressure was observed on glass substrates.The X-ray diffraction data indicated polycrystalline filns with grain orientations predominantly along（440）and （422）directions.The intensities of （440）and （422）peaks increased slightly with the increase of oxygen partial pressure both on PC and glass substrates.The AFM images show that the ITO films on PC substrates were dense and uniform.The average grain size of the films was about 40nm.
基金supported by the National Natural Science Foundation of China(Grant Nos.61222501 and 61335004)
文摘The electrical and optical properties of the indium tin oxide （ITO）/epoxy composite exhibit dramatic variations as functions of the ITO composition and ITO particle size. Sharp increases in the conductivity in the vicinity of a critical volume fraction have been found within the framework of percolation theory. A conductive and insulating transition model is extracted by the ITO particle network in the SEM image, and verified by the resistivity dependence on the temperature. The dependence of the optical transmittance on the particle size was studied. Further decreasing the ITO particle size could further improve the percolation threshold and light transparency of the composite film.
文摘Indium tin oxide(ITO) thin film was deposited on glass substrate by means of vacuum evaporation technique and annealed at 200 ℃, 300℃ and 400 ℃ in air for 1 h. The characterization and properties of the deposited film samples were analyzed by X-ray diffraction(XRD), scanning electron microscopy(SEM), and UV-VIS-NIR spectroscopy techniques. From the XRD patterns, it was found that the deposited thin film was of crystalline at an annealing temperature of 400℃. The crystalline phase was indexed as cubic structure with lattice constant and crystallite size of 0.511 nm and 40 nm, respectively. The SEM images showed that the films exhibited uniform surface morphology with well-defined spherical grains. The optical transmittance of ITO thin film annealed at 400 ℃ was improved from 44% to 84% in the wavelength range from 250 nm to 2 100 nm and an optical band gap was measured as 3.86 e V. Hall effect measurement was used to measure the resistivity and conductivity of the prepared film.
基金supported by the National Eleventh Five-Year Pre-research Project of China (No.51302060203)
文摘Inorganic buffer layers such as SiO2 or TiO2 and transparent conductive indium-tin-oxide （ITO） films were prepared on polyethylene terephthalate （PET） substrates by ion assisted deposition （IAD） at room temperature, and the effects of SiO2 and TiOzon the bending resistance performance of flexible ITO films were investigated. The results show that ITO films with SiO2 or TiO2 buffer layer have better resistance stabilities compared to ones without the buffer layer when the ITO films are inwards bent at a bending radius more than 1.2 cm and when the ITO films are outwards bent at a bending radius from 0.8 cm to 1.2 cm. 1TO films with SiO2 buffer layer have better resistance sta- bilities compared to ones with TiO2 buffer layer after the ITO fdms are bent several hundreds of cycles at the same bending radius, for the adhesion of SiO2 is stronger than that of TiO2. The compressive stress resulted from inward bending leads to the formation of more defects in the ITO films compared with the tensile stress arising from outward bending. SiO2 and TiO2 buffer layers can effectively improve the crystallinity of ITO films in （400）, （440） directions.
基金Supported by the National Natural Science Foundation of China(No. 20372060), the Key National Natural Science Foundationof China(No. 20131010), the Important National Natural Science Foundation of China(No. 20490210), the"863"Program(Nos.2002AA302105 and 2002AA324080) and Foreign Communion &Cooperation of National Natural Science Foundation of China(No.20340420326).
文摘The dependence of the performance of organic light-emitting devices（OLEDs） on the sheet resistance of indiumtin-oxide（ITO） anodes was investigated by measuring the steady state current density brightness voltage characteristics and the electroluminescent spectra. The device with a higher sheet resistance anode shows a lower current density, a lower brightness level, and a higher operation voltage. The electroluminescence（EL） efficiencies of the devices with the same structure but different ITO anodes show more complicated differences. Furthermore, the shift of the light-emitting zone toward the anode was found when an anode with a higher sheet resistance was used. These performance differences are discussed and attributed to the reduction of hole injection and the increase in voltage drop over ITO anode with the increase in sheet resistance.
基金financially supported by the Beijing Natural Science Foundation(No.2142025)
文摘Hexagonal structure indium tin oxide（ITO）nanopowders were prepared by a solvothermal process at only 175 ℃ for 24 h and post-annealing at 400 ℃, using metal indium and SnCl4·5 H2 O as the raw materials. The morphology, crystal structures and structure defects of products were, respectively, analyzed by scanning electron microscopy（SEM）, X-ray diffraction（XRD） and confocal microprobe Raman system, the elemental state was investigated by X-ray photoelectron spectroscopy（XPS）, and the optical properties were carried out by ultraviolet-visible（UV-Vis） and photoluminescence（PL） spectrophotometers. The results show that the products are hexagonal structure with a particles size of 28-41 nm; the morphology of products consists of sphere and irregular cubic.When pH values of solution increase, the content of oxygen vacancies increases and the optical band gap varies from3.59 to 3.78 eV. The products exhibit strong emission at417 nm with an excitation of 370 nm, and the PL intensity of samples increases with pH values increasing. Contrasting to cubic structure ITO powder, the hexagonal structure ITO has narrower optical band gap and higher PL intensity under the same excitation wavelength.
文摘Niobium-doped indium tin oxide （ITO：Nb） thin films are fabricated on glass substrates by radio frequency （RF） magnetron sputtering at different temperatures. Structural, electrical and optical properties of the films are investigated using X-ray diffraction （XRD）, atomic force microscopy （AFM）, ultraviolet-visible （UV-VIS） spectroscopy and electrical measurements. XRD patterns show that the preferential orientation ofpolycrystalline structure changes from （400） to （222） crystal plane, and the crystallite size increases with the increase of substrate temperature. AFM analyses reveal that the film is very smooth at low temperature. The root mean square （RMS） roughness and the average roughness are 2.16 nm and 1.64 nm, respectively. The obtained lowest resistivity of the films is 1.2 × 10^4 Ω-cm, and the resistivity decreases with the increase of substrate temperature. The highest Hall mobility and carrier concentration are 16.5 cmVV.s and 1.88× 10^21 cm^-3, respectively. Band gap energy of the films depends on substrate temperature, which is varied from 3.49 eV to 3.63 eV.
基金supported by the National Natural Science Foundation of China under Grants No.60425101Young Excellence Project of University of Electronic Science and Technology of China(UESTC-060206)project.
文摘Indium tin oxide （ITO） ultrathin films were prepared on glass substrate by DC （direct current） magnetron sputtering technique with the assistance of H2O vapor to avoid potential surface damage. The film properties were characterized by X-ray diffraction （XRD） technique, four-point probe method and spectrophotometer. The results show that the deposited ITO film with introduced H2O during sputtering process was almost amorphous. The average visible light transmission of 100 nm ITO film was around 85% and square resistivity was below 80 Ω/square. The film was used as the transparent anode to fabricate an inverted top-emitting organic light-emitting diodes （IT-OLEDs） with the structure of glass substrate/Alq3 （40 nm）/NPB （15 nm）/CuPc （x nm）/ITO anode （100 nm）, where the film thickness of CuPc was optimized. It was found that the luminance of this IT-OLEDs was improved from 25 cd/m^2 to more than 527 cd/m^2 by increasing the thickness of CuPc, and luminance efficiency of 0.24 lm/W at 100 cd/m^2 was obtained, which indicated that the optimized thickness of CuPc layer was around 15 nm.
基金Project(U0837604)supported by the Natural Science Foundation of Yunnan Province,ChinaProject(07C40291)supported by Research Fund of Yunnan Education Department,ChinaProject(2007003)supported by Research Fund of Kunming University of Science and Technology,China
文摘Indium tin oxide(ITO)nanopowders were prepared by a modified chemical co-precipitation process.The influence of different SnO2 contents on the decomposition behavior of ITO precursors,and on the phase and morphology of ITO precursors and ITO nanopowders were studied by X-ray diffractometry,transmission electron microscopy and differential thermal and thermogravimetry analysis methods.The TG-DSC curves show that the decomposition process of precursor precipitation is completed when the temperature is close to 600 ℃and the end temperature of decompositionis somewhat lower when the doping amount of SnO2 is increased.The XRD patterns indicate that the solubility limit of Sn4+ relates directly to the calcining temperature. When being calcined at 700℃,a single phase ITO powder with 15%SnO2(mass fraction)can be obtained.But,when the calcining temperature is higher than 800℃,the phase of SnO2 will appear in ITO nanopowders which contain more than 10%SnO2.The particle size of the ITO nanopowders is 15-25 nm.The ITO nanoparticles without Sn have a spherical shape,but their morphology moves towards an irregular shape when being doped with Sn4+.
文摘Spherical indium tin oxide （ITO） nanoparticles were synthesized by combustion method using citric acid as fuel and nitrates as oxidizer. The obtained ITO nanoparticles were characterized by TG-DSC, FT-IR, XRD, BET, TEM, and SEM. The ITO nanoparticles grew steadily with the increase of heat treatment temperature, and the 700~C calcined particles had a crystallite size of 25.3 nm and a specific surface area of 26.1 m2.g i The avoidance of chlorine ions in the synthesis process decreases particle agglomeration and promotes powder densification. The 900~C sintered pellet had a density of 67.6% of theoretical density （TD） and increased steadily to 97.3% for the 1400℃ sintered ceramics, respectively.
