Output power and reliability are the most important characteristic parameters of semiconductor lasers.However,catas-trophic optical damage(COD),which usually occurs on the cavity surface,will seriously damage the furt...Output power and reliability are the most important characteristic parameters of semiconductor lasers.However,catas-trophic optical damage(COD),which usually occurs on the cavity surface,will seriously damage the further improvement of the output power and affect the reliability.To improve the anti-optical disaster ability of the cavity surface,a non-absorption window(NAW)is adopted for the 915 nm InGaAsP/GaAsP single-quantum well semiconductor laser using quantum well mix-ing(QWI)induced by impurity-free vacancy.Both the principle and the process of point defect diffusion are described in detail in this paper.We also studied the effects of annealing temperature,annealing time,and the thickness of SiO_(2) film on the quan-tum well mixing in a semiconductor laser with a primary epitaxial structure,which is distinct from the previous structures.We found that when compared with the complete epitaxial structure,the blue shift of the semiconductor laser with the primary epi-taxial structure is larger under the same conditions.To obtain the appropriate blue shift window,the primary epitaxial struc-ture can use a lower annealing temperature and shorter annealing time.In addition,the process is less expensive.We also pro-vide references for upcoming device fabrication.展开更多
Polyimide/carbon black（PI/CB） nanocomposite films were fabricated via the direct ball-milling method with poly（amic acid）（PAA）, the precursor of PI, as an in situ formed impurity-free dispersant. FTIR and Raman ...Polyimide/carbon black（PI/CB） nanocomposite films were fabricated via the direct ball-milling method with poly（amic acid）（PAA）, the precursor of PI, as an in situ formed impurity-free dispersant. FTIR and Raman spectral results reveal that, besides physical adsorption, chemical grafting of PAA chains onto the CB surface occurs during the ball-milling process. Comparative studies show that introduction of various commercial dispersants improves the dispersion of CB. However, the mixtures exhibit poor reproducibility, unstable electrical properties, and decreased tensile strength; these issues may be attributed to interfacial pollution brought about by differences in the chemical structures of the dispersant and the matrix. The impurity-free dispersant is effective not only in ensuring the uniform dispersion of CB particles but also in enhancing filler-matrix interfacial adhesion. High-molecular weight PAA chains are effective reagents for impurity-free modification and can therefore be used to improve the electrical and mechanical properties of the resultant composite.展开更多
基金This work was supported by the National Natural Science Foundation of China(NNSFC)(Grant No.62174154).
文摘Output power and reliability are the most important characteristic parameters of semiconductor lasers.However,catas-trophic optical damage(COD),which usually occurs on the cavity surface,will seriously damage the further improvement of the output power and affect the reliability.To improve the anti-optical disaster ability of the cavity surface,a non-absorption window(NAW)is adopted for the 915 nm InGaAsP/GaAsP single-quantum well semiconductor laser using quantum well mix-ing(QWI)induced by impurity-free vacancy.Both the principle and the process of point defect diffusion are described in detail in this paper.We also studied the effects of annealing temperature,annealing time,and the thickness of SiO_(2) film on the quan-tum well mixing in a semiconductor laser with a primary epitaxial structure,which is distinct from the previous structures.We found that when compared with the complete epitaxial structure,the blue shift of the semiconductor laser with the primary epi-taxial structure is larger under the same conditions.To obtain the appropriate blue shift window,the primary epitaxial struc-ture can use a lower annealing temperature and shorter annealing time.In addition,the process is less expensive.We also pro-vide references for upcoming device fabrication.
基金supported by the National Basic Research Program of China(No.2013CB035505)the National Natural Science Foundation of China(No.51503066)+2 种基金Shanghai Sailing Program(No.14YF1404900)China Postdoctoral Science Foundation(No.2015M571502)the Fundamental Research Funds for the Central Universities
文摘Polyimide/carbon black（PI/CB） nanocomposite films were fabricated via the direct ball-milling method with poly（amic acid）（PAA）, the precursor of PI, as an in situ formed impurity-free dispersant. FTIR and Raman spectral results reveal that, besides physical adsorption, chemical grafting of PAA chains onto the CB surface occurs during the ball-milling process. Comparative studies show that introduction of various commercial dispersants improves the dispersion of CB. However, the mixtures exhibit poor reproducibility, unstable electrical properties, and decreased tensile strength; these issues may be attributed to interfacial pollution brought about by differences in the chemical structures of the dispersant and the matrix. The impurity-free dispersant is effective not only in ensuring the uniform dispersion of CB particles but also in enhancing filler-matrix interfacial adhesion. High-molecular weight PAA chains are effective reagents for impurity-free modification and can therefore be used to improve the electrical and mechanical properties of the resultant composite.
