The electronic structures of Ca3Co2O6, Na and Ni doped models were studied by the quantum chemical software of Cambride Serial Total Energy Package （CASTEP） that is based on deusity function theory （DFT） and psend...The electronic structures of Ca3Co2O6, Na and Ni doped models were studied by the quantum chemical software of Cambride Serial Total Energy Package （CASTEP） that is based on deusity function theory （DFT） and psendo-potential. The electronic conductivity, seebeck coefficient, thermal conduetivity and figure of merit （Z） were computed. The energy band structure reveals the form of the impurity levels due to the substitutional imapurity in semiconductors. Na-doped model stunts the character of p-type semiconductor, but Xi-doped model is n-type semiconductor. The calculation results show that the electric conduetirity of the doped model is higher than that of the non-doped model, while the Seebeck coefficient and thermal conductivity of the doped model are lower than those of the non-doped one. Because of the great increase of the electric conductivity, Z of Na- doped model is enhanced and thermoelectric properties are improved. On the other hand, as the large decline of Seebeck coefficient, Z of Ni-doped model is less than that of the non-doped model.展开更多
Structural, electronic, and magnetic behaviors of 5d transition metal（TM） atom substituted divacancy（DV） graphene are investigated using first-principles calculations. Different 5d TM atoms（Hf, Ta, W, Re, Os, Ir,...Structural, electronic, and magnetic behaviors of 5d transition metal（TM） atom substituted divacancy（DV） graphene are investigated using first-principles calculations. Different 5d TM atoms（Hf, Ta, W, Re, Os, Ir, and Pt） are embedded in graphene, these impurity atoms replace 2 carbon atoms in the graphene sheet. It is revealed that the charge transfer occurs from 5d TM atoms to the graphene layer. Hf, Ta, and W substituted graphene structures exhibit a finite band gap at high symmetric K-point in their spin up and spin down channels with 0.783 μB, 1.65 μB, and 1.78 μB magnetic moments,respectively. Ir and Pt substituted graphene structures display indirect band gap semiconductor behavior. Interestingly, Os substituted graphene shows direct band gap semiconductor behavior having a band gap of approximately 0.4 e V in their spin up channel with 1.5 μB magnetic moment. Through density of states（DOS） analysis, we can predict that d orbitals of 5d TM atoms could be responsible for introducing ferromagnetism in the graphene layer. We believe that our obtained results provide a new route for potential applications of dilute magnetic semiconductors and half-metals in spintronic devices by employing 5d transition metal atom-doped graphene complexes.展开更多
基金Funded by the National Natural Science Foundation of China(No.20271040)
文摘The electronic structures of Ca3Co2O6, Na and Ni doped models were studied by the quantum chemical software of Cambride Serial Total Energy Package （CASTEP） that is based on deusity function theory （DFT） and psendo-potential. The electronic conductivity, seebeck coefficient, thermal conduetivity and figure of merit （Z） were computed. The energy band structure reveals the form of the impurity levels due to the substitutional imapurity in semiconductors. Na-doped model stunts the character of p-type semiconductor, but Xi-doped model is n-type semiconductor. The calculation results show that the electric conduetirity of the doped model is higher than that of the non-doped model, while the Seebeck coefficient and thermal conductivity of the doped model are lower than those of the non-doped one. Because of the great increase of the electric conductivity, Z of Na- doped model is enhanced and thermoelectric properties are improved. On the other hand, as the large decline of Seebeck coefficient, Z of Ni-doped model is less than that of the non-doped model.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.51522601 and 51421063)the Program for New Century Excellent Talents in University,China(Grant No.NCET-13-0173)
文摘Structural, electronic, and magnetic behaviors of 5d transition metal（TM） atom substituted divacancy（DV） graphene are investigated using first-principles calculations. Different 5d TM atoms（Hf, Ta, W, Re, Os, Ir, and Pt） are embedded in graphene, these impurity atoms replace 2 carbon atoms in the graphene sheet. It is revealed that the charge transfer occurs from 5d TM atoms to the graphene layer. Hf, Ta, and W substituted graphene structures exhibit a finite band gap at high symmetric K-point in their spin up and spin down channels with 0.783 μB, 1.65 μB, and 1.78 μB magnetic moments,respectively. Ir and Pt substituted graphene structures display indirect band gap semiconductor behavior. Interestingly, Os substituted graphene shows direct band gap semiconductor behavior having a band gap of approximately 0.4 e V in their spin up channel with 1.5 μB magnetic moment. Through density of states（DOS） analysis, we can predict that d orbitals of 5d TM atoms could be responsible for introducing ferromagnetism in the graphene layer. We believe that our obtained results provide a new route for potential applications of dilute magnetic semiconductors and half-metals in spintronic devices by employing 5d transition metal atom-doped graphene complexes.
