Extremely thin silicon on insulator p-channel metal oxide-semiconductor field-effect transistors （PMOSFETs） with implanted doping and in situ doping are analyzed by TCAD simulation. The critical characteris- tic par...Extremely thin silicon on insulator p-channel metal oxide-semiconductor field-effect transistors （PMOSFETs） with implanted doping and in situ doping are analyzed by TCAD simulation. The critical characteris- tic parameters acquired by TCAD simulation are compared with each other to analyze their electrical perfbrmance. The saturated driven currents of implanted doping devices with a 25 nm gate length （Lg） are about 200 ×μA/μm bigger than the in situ doping devices at the same saturated threshold voltage （Vtsat）. Meanwhile the drain-induced barrier lowering （DIBL） and saturated subthreshold swings for implanted doping devices are also 30 50 mV/V and 6.3-9.1 mV/dec smaller than those of in situ doping devices at 25 nm Lg and a 9-11 nm thickness of SOl （Tsi）, respectively. The shift of Vtsat with Tsi for in situ doping devices with 15 nm Lg is -31.8 mV/nm, whereas that for in situ doping devices is only -6.8 mV/nm. These outcomes indicate that the devices with implanted doping can produce a more advanced and stable electrical performance.展开更多
Spherical Li-rich lithium manganese oxide（LMO） spinel material was synthesized by an ion implanted method assisted by polyalcohol doped with Niobium and Phosphate simultaneously.The material was characterized by sca...Spherical Li-rich lithium manganese oxide（LMO） spinel material was synthesized by an ion implanted method assisted by polyalcohol doped with Niobium and Phosphate simultaneously.The material was characterized by scanning electron microscopy,X-ray diffraction and BET specific surface area analysis.The electrochemical performances were investigated with galvanostatic techniques and cyclic voltammetry.The synthesis process was investigated with TG/DSC.The results show that the lithium ion can be immersed into the pore of manganese dioxide at a low temperature with the ion implanted method.The prepared materials have a higher discharge capacity and better crystallization than those prepared by solid phase method.The doped Nb can improve the capacity of the Li-rich LMO spinel and reinforce the crystal growth along（111） and（400） planes.The crystal grains show circular and smooth morphology,which makes the specific surface area greatly decreased.Phosphate-doped LMO spinel exhibits good high-rate capacity and structure stability.The prepared Li（1.09）Mn（1.87）Nb（0.031）O（3.99）（PO4）（0.021）delivers a discharge capacity of 119mAhg^-1 at 0.2C（1C=148mAg^-1） and 112.8 mAhg^-1 at 10 C,the discharge capacity retention reaches 98% at 1 ℃ after 50 cycles at 25 ℃ and 94% at 55 ℃.展开更多
基金supported by the Institute of Microelectronics,Chinese Academy of Sciences
文摘Extremely thin silicon on insulator p-channel metal oxide-semiconductor field-effect transistors （PMOSFETs） with implanted doping and in situ doping are analyzed by TCAD simulation. The critical characteris- tic parameters acquired by TCAD simulation are compared with each other to analyze their electrical perfbrmance. The saturated driven currents of implanted doping devices with a 25 nm gate length （Lg） are about 200 ×μA/μm bigger than the in situ doping devices at the same saturated threshold voltage （Vtsat）. Meanwhile the drain-induced barrier lowering （DIBL） and saturated subthreshold swings for implanted doping devices are also 30 50 mV/V and 6.3-9.1 mV/dec smaller than those of in situ doping devices at 25 nm Lg and a 9-11 nm thickness of SOl （Tsi）, respectively. The shift of Vtsat with Tsi for in situ doping devices with 15 nm Lg is -31.8 mV/nm, whereas that for in situ doping devices is only -6.8 mV/nm. These outcomes indicate that the devices with implanted doping can produce a more advanced and stable electrical performance.
基金supported by a grant from the National High Technology Research and Development Program of China(863 Program)(No.2008AA11A102)
文摘Spherical Li-rich lithium manganese oxide（LMO） spinel material was synthesized by an ion implanted method assisted by polyalcohol doped with Niobium and Phosphate simultaneously.The material was characterized by scanning electron microscopy,X-ray diffraction and BET specific surface area analysis.The electrochemical performances were investigated with galvanostatic techniques and cyclic voltammetry.The synthesis process was investigated with TG/DSC.The results show that the lithium ion can be immersed into the pore of manganese dioxide at a low temperature with the ion implanted method.The prepared materials have a higher discharge capacity and better crystallization than those prepared by solid phase method.The doped Nb can improve the capacity of the Li-rich LMO spinel and reinforce the crystal growth along（111） and（400） planes.The crystal grains show circular and smooth morphology,which makes the specific surface area greatly decreased.Phosphate-doped LMO spinel exhibits good high-rate capacity and structure stability.The prepared Li（1.09）Mn（1.87）Nb（0.031）O（3.99）（PO4）（0.021）delivers a discharge capacity of 119mAhg^-1 at 0.2C（1C=148mAg^-1） and 112.8 mAhg^-1 at 10 C,the discharge capacity retention reaches 98% at 1 ℃ after 50 cycles at 25 ℃ and 94% at 55 ℃.
