Remarkable developments in image recognition technology trigger demands for more advanced imaging devices.In recent years,traditional image sensors,as the go-to imaging devices,have made substantial progress in their ...Remarkable developments in image recognition technology trigger demands for more advanced imaging devices.In recent years,traditional image sensors,as the go-to imaging devices,have made substantial progress in their optoelectronic characteristics and functionality.Moreover,a new breed of imaging device with information processing capability,known as neuromorphic vision sensors,is developed by mimicking biological vision.In this review,we delve into the recent progress of imaging devices,specifically image sensors and neuromorphic vision sensors.This review starts by introducing their core components,namely photodetectors and photonic synapses,while placing a strong emphasis on device structures,working mechanisms and key performance parameters.Then it proceeds to summarize the noteworthy achievements in both image sensors and neuromorphic vision sensors,including advancements in large-scale and highresolution imaging,filter-free multispectral recognition,polarization sensitivity,flexibility,hemispherical designs,and self-power supply of image sensors,as well as in neuromorphic imaging and data processing,environmental adaptation,and ultra-low power consumption of neuromorphic vision sensors.Finally,the challenges and prospects that lie ahead in the ongoing development of imaging devices are addressed.展开更多
Various novel conjugated polymers(CPs)have been developed for organic photodetectors(OPDs),but their application to practical image sensors such as X-ray,R/G/B,and fingerprint sensors is rare.In this article,we report...Various novel conjugated polymers(CPs)have been developed for organic photodetectors(OPDs),but their application to practical image sensors such as X-ray,R/G/B,and fingerprint sensors is rare.In this article,we report the entire process from the synthesis and molecular engineering of novel CPs to the development of OPDs and fingerprint image sensors.We synthesized six benzo[1,2-d:4,5-d’]bis(oxazole)(BBO)-based CPs by modifying the alkyl side chains of the CPs.Several relationships between the molecular structure and the OPD performance were revealed,and increasing the number of linear octyl side chains on the conjugated backbone was the best way to improve Jph and reduce Jd in the OPDs.The optimized CP demonstrated promising OPD performance with a responsivity(R)of 0.22 A/W,specific detectivity(D^(*))of 1.05×10^(13)Jones at a bias of-1 V,rising/falling response time of 2.9/6.9μs,and cut-off frequency(f_(-3dB))of 134 kHz under collimated 530 nm LED irradiation.Finally,a fingerprint image sensor was fabricated by stacking the POTB1-based OPD layer on the organic thin-film transistors(318 ppi).The image contrast caused by the valleys and ridges in the fingerprints was obtained as a digital signal.展开更多
A rhodamine-based sensor（1） has been developed for the detection of chromium ions.Cr-（3＋）-induced opening of the rhodamine spirocycle in sensor（1） led to the distinct colorimetric and fluorescence responses.Amo...A rhodamine-based sensor（1） has been developed for the detection of chromium ions.Cr-（3＋）-induced opening of the rhodamine spirocycle in sensor（1） led to the distinct colorimetric and fluorescence responses.Among all the tested ions,only Cr-（3＋） generated a significant fluorescence enhancement of up to13-fold,which indicated the high selectivity of 1.Sensor（1） was successfully applied in the in vivo fluorescence imaging of Cr-（3＋） in C.elegans.The results provided solid evidences for the future estimation of Cr-（3＋） in environmental applications and tobacco samples.展开更多
The Complementary Metal-Oxide Semiconductor(CMOS)image sensor is a critical component with the function of providing accurate positioning in many space application systems.Under long-time operation in space environmen...The Complementary Metal-Oxide Semiconductor(CMOS)image sensor is a critical component with the function of providing accurate positioning in many space application systems.Under long-time operation in space environments,there are radiation related degradation and var-ious uncertainties affecting the positioning accuracy of CMOS image sensors,which further leads to a reliability reduction of CMOS image sensors.Obviously,the reliability of CMOS image sensors is related to their specified function,degradation,and uncertainties;however,current research has not fully described this relationship.In this paper,a comprehensive approach to reliability modelling of CMOs image sensors is proposed based on the reliability science principles.Firstly,the perfor-mance margin modelling of centroid positioning accuracy is conducted.Then,the degradation model of CMOS image sensors is derived considering the dark current increase induced by the total ionizing dose effects.Finally,various uncertainties are analyzed and quantified,and the measure-ment equation of reliability is proposed.A case study of a CMOS image sensor is conducted to apply the proposed method,and the sensitivity analysis can provide suggestions for design and use of CMOS image sensors to ensure reliability.A simulation study is conducted to present the advantages oftheproposed comprehensive approach.展开更多
This study investigates the effects of displacement damage on the dark signal of a pinned photodiode CMOS image sensor(CIS)following irradiation with back-streaming white neutrons from white neutron sources at the Chi...This study investigates the effects of displacement damage on the dark signal of a pinned photodiode CMOS image sensor(CIS)following irradiation with back-streaming white neutrons from white neutron sources at the China spallation neutron source(CSNS)and Xi'an pulsed reactor(XAPR).The mean dark signal,dark signal non-uniformity(DSNU),dark signal distribution,and hot pixels of the CIS were compared between the CSNS back-n and XAPR neutron irradiations.The nonionizing energy loss and energy distribution of primary knock-on atoms in silicon,induced by neutrons,were calculated using the open-source package Geant4.An analysis combining experimental and simulation results showed a noticeable proportionality between the increase in the mean dark signal and the displacement damage dose(DDD).Additionally,neutron energies influence DSNU,dark signal distribution,and hot pixels.High neutron energies at the same DDD level may lead to pronounced dark signal non-uniformity and elevated hot pixel values.展开更多
A joint green-edge computing idea is now realized in practice with the help of intelligent infrastructure for modern sport venues,based on Internet of Things(IoT)platforms and Cyber-Physical Systems(CPS).To monitor th...A joint green-edge computing idea is now realized in practice with the help of intelligent infrastructure for modern sport venues,based on Internet of Things(IoT)platforms and Cyber-Physical Systems(CPS).To monitor their sports actions,athletes need smart environments.Using edge-enabled low-cost and low-power sensors,such as infrared monitoring systems that analyze thermal information,this environment should alert to possible physical damages.Early recognition of sports injuries and joint injuries can usually prevent athletes from pain and missing exercise.One of the most efficient methods for identifying pain and movement problems is to monitor the energy emitted by lower limb injuries.By analyzing thermal images of the lower body parts,this research attempts to automatically identify sports injuries.The thermal image is first isolated from the region of interest.Convolutional structures are applied to identify lesions using a newly developed and optimized method.The performance of the classifier is performed with the possibility of deep learning by pruning the features,to reduce the computational complexity and improve the accuracy,and a model has been developed based on the classification of sports injuries in binary mode(i.e.,whether the lesions are present or not)and multiclass mode(i.e.,the severity of sports injuries)resulted in optimal results.Thermal images show the different states of joints,including lesions caused by various sports in the lower limbs.This model could provide the ability of solving uncertainty of answers,repeatability,and convergence towards minimum error.As compared to conventional feature extraction and classification approaches,the outputs are more acceptable.By taking advantage of the K-fold cross-validation method,the average error of the proposed method to detect the severity of damage is less than 2.22%.展开更多
A three-transistor active pixel sensor and its double sampling readout circuit implemented by a switch capacitor amplifier are designed. The circuit is embedded in a 64 × 64 pixel array CMOS image sensor and succ...A three-transistor active pixel sensor and its double sampling readout circuit implemented by a switch capacitor amplifier are designed. The circuit is embedded in a 64 × 64 pixel array CMOS image sensor and success-fully taped out with a Chartered 0.35μm process. The pixel pitch is 8μm × 8μm with a fill factor of 57%, the photo-sensitivity is 0.8V/（lux · s） ,and the dynamic range is 50dB. Theoretical analysis and test results indicate that as the process is scaled down, a smaller pixel pitch reduces the sensitivity. A deep junction n-well/p-substrate photodiode with a reasonable fill factor and high sensitivity are more appropriate for submicron processes.展开更多
A low-power-consumption 9bit 10MS/s pipeline ADC,used in a CMOS image sensor,is proposed. In the design, the decrease of power consumption is achieved by applying low-power-consumption and large-output-swing amplifier...A low-power-consumption 9bit 10MS/s pipeline ADC,used in a CMOS image sensor,is proposed. In the design, the decrease of power consumption is achieved by applying low-power-consumption and large-output-swing amplifiers with gain boost structure, and biasing all the cells with the same voltage bias source, which requires careful layout design and large capacitors. In addition,capacitor array DAC is also applied to reduce power consumption,and low threshold voltage MOS transistors are used to achieve a large signal processing range. The ADC was implemented in a 0.18μm 4M-1 P CMOS process,and the experimental results indicate that it consumes only 7mW, which is much less than general pipeline ADCs. The ADC was used in a 300000 pixels CMOS image sensor.展开更多
A new photodetector--bipolar junction photogate transistor is presented for CMOS image sensor and its analytical model is also established.With the technical parameter of the 0.6μm CMOS process,the bipolar junction p...A new photodetector--bipolar junction photogate transistor is presented for CMOS image sensor and its analytical model is also established.With the technical parameter of the 0.6μm CMOS process,the bipolar junction photogate transistor is analyzed and simulated.The simulated results illustrate that the bipolar junction photogate transistor has the similar characteristics of the traditional photogate transistor.The photocurrent density of the bipolar junction photogate transistor increases exponentially with the incidence light power due to introducing the injection p+n junction.Its characteristic of blue response is rather improved compared to the traditional photogate transistor that benefits to increase the color photograph made up of the red,the green,and the blue.展开更多
A single CMOS image sensor based on a 0.35μm process along with its design and implementation is introduced. The architecture of an active pixel sensor is used in the chip. The fill factor of a pixel cell can reach 4...A single CMOS image sensor based on a 0.35μm process along with its design and implementation is introduced. The architecture of an active pixel sensor is used in the chip. The fill factor of a pixel cell can reach 43%,higher than the traditional factor of 30%. Moreover, compared with the conventional method whose fixed pattern noise （FPN） is around 0.5%, a dynamic digital double sampling technique is developed, which possesses simpler circuit architecture and a better FPN suppression outcome. The CMOS image sensor chip is implemented in the 0.35μm mixed signal process of a Chartered by MPW. The experimental results show that the chip operates welt,with an FPN of about 0.17%.展开更多
With the extension of the application domains for laser imaging radar, it is necessary to find a new technical way to obtain high technical performance and adaptive ability. In this paper, A new concept of digital rec...With the extension of the application domains for laser imaging radar, it is necessary to find a new technical way to obtain high technical performance and adaptive ability. In this paper, A new concept of digital receiver of laser imaging radar system is presented. This digital receiver is defined as a time varying parameter receiver which possesses large dynamics region and time domain filter. The receiver’s mode, component structure as well as every function of its processing are described. The results and laboratorial data show the feasibility of digital reception. Also, it can exploit the inherent nature of laser imaging radar to obtain high probability of detection.展开更多
In recent years,the rapid development of artificial intelligence has driven the widespread deployment of visual systems in complex environments such as autonomous driving,security surveillance,and medical diagnosis.Ho...In recent years,the rapid development of artificial intelligence has driven the widespread deployment of visual systems in complex environments such as autonomous driving,security surveillance,and medical diagnosis.However,existing image sensors—such as CMOS and CCD devices—intrinsically suffer from the limitation of fixed spectral response.Especially in environments with strong glare,haze,or dust,external spectral conditions often severely mismatch the device's design range,leading to significant degradation in image quality and a sharp drop in target recognition accuracy.While algorithmic post-processing(such as color bias correction or background suppression)can mitigate these issues,algorithm approaches typically introduce computational latency and increased energy consumption,making them unsuitable for edge computing or high-speed scenarios.展开更多
Solar-blind deep-ultraviolet(DUV)photodetectors based on Ga_(2)O_(3)have attracted great attention due to their potential applications for many military and civil purposes.However,the development of device integration...Solar-blind deep-ultraviolet(DUV)photodetectors based on Ga_(2)O_(3)have attracted great attention due to their potential applications for many military and civil purposes.However,the development of device integration for optoelectronic system applications remains a huge challenge.Herein,we report a facile method for patterned-growth of high-qualityβ-Ga_(2)O_(3)thin films,which are assembled into a photodetectors array comprising 8×8 device units.A representative detector exhibits outstanding photoresponse performance,in terms of an ultra-low dark current of 0.62 pA,a large Ilight/Idark ratio exceeding 10^(4),a high responsivity of 0.72 A W^(-1) and a decent specific detectivity of 4.18×10^(11)Jones,upon 265 nm DUV illumination.What is more,the DUV/visible(250/400 nm)rejection ratio is as high as 10^(3) with a sharp response cut-off wave length at 280 nm.Further optoelectronic analysis reveals that the photodetectors array has good uniformity and repeatability,endowing it the capability to serve as a reliable DUV light image sensor with a decent spatial resolution.These results suggest that the proposed technique offers an effective avenue for patterned growth ofβ-Ga_(2)O_(3)thin films for multifunctional DUV optoelectronic applications.展开更多
Conventional frame-based image sensors suffer greatly from high energy consumption and latency.Mimicking neurobiological structures and functionalities of the retina provides a promising way to build a neuromorphic vi...Conventional frame-based image sensors suffer greatly from high energy consumption and latency.Mimicking neurobiological structures and functionalities of the retina provides a promising way to build a neuromorphic vision sensor with highly efficient image processing.In this review article,we will start with a brief introduction to explain the working mechanism and the challenges of conventional frame-based image sensors,and introduce the structure and functions of biological retina.In the main section,we will overview recent developments in neuromorphic vision sensors,including the silicon retina based on conventional Si CMOS digital technologies,and the neuromorphic vision sensors with the implementation of emerging devices.Finally,we will provide a brief outline of the prospects and outlook for the development of this field.展开更多
The quality of dark output images from the CMOS (complementarymetal oxide semiconductor) black and white (B & W) digital imagesensors captured before and after γ-ray irradiation was studied. Thecharacteristic par...The quality of dark output images from the CMOS (complementarymetal oxide semiconductor) black and white (B & W) digital imagesensors captured before and after γ-ray irradiation was studied. Thecharacteristic parameters of the dark output images captured atdifferent radiation dose, e.g. average brightness and itsnon-uniformity of dark out- put images, were analyzed by our testsoftware. The primary explanation for the change of the parameterswith the radi- ation dose was given.展开更多
A double sampling circuit to eliminating fixed pattern noise(FPN) in CMOS image sensor (CIS) is presented. Double sampling is implemented by column switch capacitor amplifier directly, and offset compensation is added...A double sampling circuit to eliminating fixed pattern noise(FPN) in CMOS image sensor (CIS) is presented. Double sampling is implemented by column switch capacitor amplifier directly, and offset compensation is added to the amplifier to suppress column FPN. The amplifier is embedded in a 64×64 CIS and successfully fabricated with chartered 0.35 μm process. Theory analysis and circuit simulation indicate that FPN can be suppressed from millivolt to microvolt. Test results show that FPN is smaller than one least-significant bit of 8 bit ADC. FPN is reduced to an acceptable level with double sampling technique implemented with switch capacitor amplifier.展开更多
In this study,we have developed a high-sensitivity,near-infrared photodetector based on PdSe2/GaAs heterojunction,which was made by transferring a multilayered PdSe2 film onto a planar GaAs.The as-fabricated PdSe2/GaA...In this study,we have developed a high-sensitivity,near-infrared photodetector based on PdSe2/GaAs heterojunction,which was made by transferring a multilayered PdSe2 film onto a planar GaAs.The as-fabricated PdSe2/GaAs heterojunction device exhibited obvious photovoltaic behavior to 808 nm illumination,indicating that the near-infrared photodetector can be used as a self-driven device without external power supply.Further device analysis showed that the hybrid heterojunction exhibited a high on/off ratio of 1.16×10^5 measured at 808 nm under zero bias voltage.The responsivity and specific detectivity of photodetector were estimated to be 171.34 mA/W and 2.36×10^11 Jones,respectively.Moreover,the device showed excellent stability and reliable repeatability.After 2 months,the photoelectric characteristics of the near-infrared photodetector hardly degrade in air,attributable to the good stability of the PdSe2.Finally,the PdSe2/GaAs-based heterojunction device can also function as a near-infrared light sensor.展开更多
Visual image sensor is developed to detect the weld pool images in pulsed MIG welding. An exposure controller, which is composed of the modules of the voltage transforming, the exposure parameters presetting, the comp...Visual image sensor is developed to detect the weld pool images in pulsed MIG welding. An exposure controller, which is composed of the modules of the voltage transforming, the exposure parameters presetting, the complex programmable logic device （CPLD） based logic controlling, exposure signal processing, the arc state detecting, the mechanical iris driving and so on, is designed at first. Then, a visual image sensor consists of an ordinary CCD camera, optical system and exposure controller is established. The exposure synchronic control logic is described with very-high-speed integrated circuit hardware description language （VHDL） and programmed with CPLD , to detect weld pool images at the stage of base current in pulsed MIG welding. Finally, both bead on plate welding and V groove filled welding are carried out, clear and consistent weld pool images are acquired.展开更多
A low cost of die area and power consumption CMOS image sensor readout circuit with fixed pattern noise(FPN) cancellation is proposed.By using only one coupling capacitor and switch in the double FPN cancelling correl...A low cost of die area and power consumption CMOS image sensor readout circuit with fixed pattern noise(FPN) cancellation is proposed.By using only one coupling capacitor and switch in the double FPN cancelling correlative double sampling(CDS),pixel FPN is cancelled and column FPN is stored and eliminated by the sampleand-hold operation of digitally programmable gain amplifier(DPGA).The bandwidth balance technology based on operational amplifier(op-amp) sharing is also introduced to decrease the power dissi...展开更多
A signal chain model of single-bit and multi-bit quanta image sensors(QISs)is established.Based on the proposed model,the photoresponse characteristics and signal error rates of QISs are investigated,and the effects o...A signal chain model of single-bit and multi-bit quanta image sensors(QISs)is established.Based on the proposed model,the photoresponse characteristics and signal error rates of QISs are investigated,and the effects of bit depth,quantum efficiency,dark current,and read noise on them are analyzed.When the signal error rates towards photons and photoelectrons counting are lower than 0.01,the high accuracy photon and photoelectron counting exposure ranges are determined.Furthermore,an optimization method of integration time to ensure that the QIS works in these high accuracy exposure ranges is presented.The trade-offs between pixel area,the mean value of incident photons,and integration time under different illuminance level are analyzed.For the 3-bit QIS with 0.16 e-/s dark current and 0.21 e-r.m.s.read noise,when the illuminance level and pixel area are 1 lux and 1.21μm^(2),or 10000 lux and 0.21μm^(2),the recommended integration time is 8.8 to 30 ms,or 10 to21.3μs,respectively.The proposed method can guide the design and operation of single-bit and multi-bit QISs.展开更多
基金financially supported by the National Natural Science Foundation of China(Nos.52202181,52125205,U20A20166,52192614,52372154,52002246 and U22A2077)the National Key R&D Program of China(Nos.2021YFB3200302 and 2021YFB3200304)+3 种基金the Natural Science Foundation of Beijing Municipality(Nos.2180011 and 2222088)China Postdoctoral Science Foundation(No.2022M712166)Shenzhen Science and Technology Program(No.KQTD20170810105439418)the Fundamental Research Funds for the Central Universities。
文摘Remarkable developments in image recognition technology trigger demands for more advanced imaging devices.In recent years,traditional image sensors,as the go-to imaging devices,have made substantial progress in their optoelectronic characteristics and functionality.Moreover,a new breed of imaging device with information processing capability,known as neuromorphic vision sensors,is developed by mimicking biological vision.In this review,we delve into the recent progress of imaging devices,specifically image sensors and neuromorphic vision sensors.This review starts by introducing their core components,namely photodetectors and photonic synapses,while placing a strong emphasis on device structures,working mechanisms and key performance parameters.Then it proceeds to summarize the noteworthy achievements in both image sensors and neuromorphic vision sensors,including advancements in large-scale and highresolution imaging,filter-free multispectral recognition,polarization sensitivity,flexibility,hemispherical designs,and self-power supply of image sensors,as well as in neuromorphic imaging and data processing,environmental adaptation,and ultra-low power consumption of neuromorphic vision sensors.Finally,the challenges and prospects that lie ahead in the ongoing development of imaging devices are addressed.
基金funded by the National Research Foundation(NRF)of Korea(2020M3H4A3081816,RS-2023-00304936,and RS-2024-00398065).
文摘Various novel conjugated polymers(CPs)have been developed for organic photodetectors(OPDs),but their application to practical image sensors such as X-ray,R/G/B,and fingerprint sensors is rare.In this article,we report the entire process from the synthesis and molecular engineering of novel CPs to the development of OPDs and fingerprint image sensors.We synthesized six benzo[1,2-d:4,5-d’]bis(oxazole)(BBO)-based CPs by modifying the alkyl side chains of the CPs.Several relationships between the molecular structure and the OPD performance were revealed,and increasing the number of linear octyl side chains on the conjugated backbone was the best way to improve Jph and reduce Jd in the OPDs.The optimized CP demonstrated promising OPD performance with a responsivity(R)of 0.22 A/W,specific detectivity(D^(*))of 1.05×10^(13)Jones at a bias of-1 V,rising/falling response time of 2.9/6.9μs,and cut-off frequency(f_(-3dB))of 134 kHz under collimated 530 nm LED irradiation.Finally,a fingerprint image sensor was fabricated by stacking the POTB1-based OPD layer on the organic thin-film transistors(318 ppi).The image contrast caused by the valleys and ridges in the fingerprints was obtained as a digital signal.
基金supported by fund of China Tobacco Yunnan Industrial Co.(No.2015JC05)the Foundation of the Department of Science and Technology of Yunnan Province of China(Nos.2013HB062,2014HB008,2016FB020)the Program for Excellent Youth Talents of Yunnan University(No.XT412003)
文摘A rhodamine-based sensor（1） has been developed for the detection of chromium ions.Cr-（3＋）-induced opening of the rhodamine spirocycle in sensor（1） led to the distinct colorimetric and fluorescence responses.Among all the tested ions,only Cr-（3＋） generated a significant fluorescence enhancement of up to13-fold,which indicated the high selectivity of 1.Sensor（1） was successfully applied in the in vivo fluorescence imaging of Cr-（3＋） in C.elegans.The results provided solid evidences for the future estimation of Cr-（3＋） in environmental applications and tobacco samples.
基金the National Natural Science Foundation of China (No.51775020)the Science Challenge Project,China (No.TZ2018007)+1 种基金the National Natural Science Foundation of China (No.62073009)the Fundamental Research Funds for Central Universities,China (No.YWF-19-BJ-J-515).
文摘The Complementary Metal-Oxide Semiconductor(CMOS)image sensor is a critical component with the function of providing accurate positioning in many space application systems.Under long-time operation in space environments,there are radiation related degradation and var-ious uncertainties affecting the positioning accuracy of CMOS image sensors,which further leads to a reliability reduction of CMOS image sensors.Obviously,the reliability of CMOS image sensors is related to their specified function,degradation,and uncertainties;however,current research has not fully described this relationship.In this paper,a comprehensive approach to reliability modelling of CMOs image sensors is proposed based on the reliability science principles.Firstly,the perfor-mance margin modelling of centroid positioning accuracy is conducted.Then,the degradation model of CMOS image sensors is derived considering the dark current increase induced by the total ionizing dose effects.Finally,various uncertainties are analyzed and quantified,and the measure-ment equation of reliability is proposed.A case study of a CMOS image sensor is conducted to apply the proposed method,and the sensitivity analysis can provide suggestions for design and use of CMOS image sensors to ensure reliability.A simulation study is conducted to present the advantages oftheproposed comprehensive approach.
基金supported by the Young Elite Scientists Sponsorship Program by CAST(No.YESS20210441)the National Natural Science Foundation of China(Nos.U2167208,11875223)。
文摘This study investigates the effects of displacement damage on the dark signal of a pinned photodiode CMOS image sensor(CIS)following irradiation with back-streaming white neutrons from white neutron sources at the China spallation neutron source(CSNS)and Xi'an pulsed reactor(XAPR).The mean dark signal,dark signal non-uniformity(DSNU),dark signal distribution,and hot pixels of the CIS were compared between the CSNS back-n and XAPR neutron irradiations.The nonionizing energy loss and energy distribution of primary knock-on atoms in silicon,induced by neutrons,were calculated using the open-source package Geant4.An analysis combining experimental and simulation results showed a noticeable proportionality between the increase in the mean dark signal and the displacement damage dose(DDD).Additionally,neutron energies influence DSNU,dark signal distribution,and hot pixels.High neutron energies at the same DDD level may lead to pronounced dark signal non-uniformity and elevated hot pixel values.
文摘A joint green-edge computing idea is now realized in practice with the help of intelligent infrastructure for modern sport venues,based on Internet of Things(IoT)platforms and Cyber-Physical Systems(CPS).To monitor their sports actions,athletes need smart environments.Using edge-enabled low-cost and low-power sensors,such as infrared monitoring systems that analyze thermal information,this environment should alert to possible physical damages.Early recognition of sports injuries and joint injuries can usually prevent athletes from pain and missing exercise.One of the most efficient methods for identifying pain and movement problems is to monitor the energy emitted by lower limb injuries.By analyzing thermal images of the lower body parts,this research attempts to automatically identify sports injuries.The thermal image is first isolated from the region of interest.Convolutional structures are applied to identify lesions using a newly developed and optimized method.The performance of the classifier is performed with the possibility of deep learning by pruning the features,to reduce the computational complexity and improve the accuracy,and a model has been developed based on the classification of sports injuries in binary mode(i.e.,whether the lesions are present or not)and multiclass mode(i.e.,the severity of sports injuries)resulted in optimal results.Thermal images show the different states of joints,including lesions caused by various sports in the lower limbs.This model could provide the ability of solving uncertainty of answers,repeatability,and convergence towards minimum error.As compared to conventional feature extraction and classification approaches,the outputs are more acceptable.By taking advantage of the K-fold cross-validation method,the average error of the proposed method to detect the severity of damage is less than 2.22%.
文摘A three-transistor active pixel sensor and its double sampling readout circuit implemented by a switch capacitor amplifier are designed. The circuit is embedded in a 64 × 64 pixel array CMOS image sensor and success-fully taped out with a Chartered 0.35μm process. The pixel pitch is 8μm × 8μm with a fill factor of 57%, the photo-sensitivity is 0.8V/（lux · s） ,and the dynamic range is 50dB. Theoretical analysis and test results indicate that as the process is scaled down, a smaller pixel pitch reduces the sensitivity. A deep junction n-well/p-substrate photodiode with a reasonable fill factor and high sensitivity are more appropriate for submicron processes.
文摘A low-power-consumption 9bit 10MS/s pipeline ADC,used in a CMOS image sensor,is proposed. In the design, the decrease of power consumption is achieved by applying low-power-consumption and large-output-swing amplifiers with gain boost structure, and biasing all the cells with the same voltage bias source, which requires careful layout design and large capacitors. In addition,capacitor array DAC is also applied to reduce power consumption,and low threshold voltage MOS transistors are used to achieve a large signal processing range. The ADC was implemented in a 0.18μm 4M-1 P CMOS process,and the experimental results indicate that it consumes only 7mW, which is much less than general pipeline ADCs. The ADC was used in a 300000 pixels CMOS image sensor.
文摘A new photodetector--bipolar junction photogate transistor is presented for CMOS image sensor and its analytical model is also established.With the technical parameter of the 0.6μm CMOS process,the bipolar junction photogate transistor is analyzed and simulated.The simulated results illustrate that the bipolar junction photogate transistor has the similar characteristics of the traditional photogate transistor.The photocurrent density of the bipolar junction photogate transistor increases exponentially with the incidence light power due to introducing the injection p+n junction.Its characteristic of blue response is rather improved compared to the traditional photogate transistor that benefits to increase the color photograph made up of the red,the green,and the blue.
文摘A single CMOS image sensor based on a 0.35μm process along with its design and implementation is introduced. The architecture of an active pixel sensor is used in the chip. The fill factor of a pixel cell can reach 43%,higher than the traditional factor of 30%. Moreover, compared with the conventional method whose fixed pattern noise （FPN） is around 0.5%, a dynamic digital double sampling technique is developed, which possesses simpler circuit architecture and a better FPN suppression outcome. The CMOS image sensor chip is implemented in the 0.35μm mixed signal process of a Chartered by MPW. The experimental results show that the chip operates welt,with an FPN of about 0.17%.
文摘With the extension of the application domains for laser imaging radar, it is necessary to find a new technical way to obtain high technical performance and adaptive ability. In this paper, A new concept of digital receiver of laser imaging radar system is presented. This digital receiver is defined as a time varying parameter receiver which possesses large dynamics region and time domain filter. The receiver’s mode, component structure as well as every function of its processing are described. The results and laboratorial data show the feasibility of digital reception. Also, it can exploit the inherent nature of laser imaging radar to obtain high probability of detection.
基金supported in part by STI 2030-Major Projects(2022ZD0209200)in part by National Natural Science Foundation of China(62374099)+2 种基金in part by Beijing Natural Science Foundation−Xiaomi Innovation Joint Fund(L233009)Beijing Natural Science Foundation(L248104)in part by Independent Research Program of School of Integrated Circuits,Tsinghua University,in part by Tsinghua University Fuzhou Data Technology Joint Research Institute.
文摘In recent years,the rapid development of artificial intelligence has driven the widespread deployment of visual systems in complex environments such as autonomous driving,security surveillance,and medical diagnosis.However,existing image sensors—such as CMOS and CCD devices—intrinsically suffer from the limitation of fixed spectral response.Especially in environments with strong glare,haze,or dust,external spectral conditions often severely mismatch the device's design range,leading to significant degradation in image quality and a sharp drop in target recognition accuracy.While algorithmic post-processing(such as color bias correction or background suppression)can mitigate these issues,algorithm approaches typically introduce computational latency and increased energy consumption,making them unsuitable for edge computing or high-speed scenarios.
基金supported by the National Natural Science Foundation of China(NSFC,Nos.51902078,62074048)the Fundamental Research Funds for the Central Universities(PA2020GDKC0014,JZ2020HGTB0051,JZ2018HGXC0001)the Anhui Provincial Natural Science Foundation(2008085MF205)。
文摘Solar-blind deep-ultraviolet(DUV)photodetectors based on Ga_(2)O_(3)have attracted great attention due to their potential applications for many military and civil purposes.However,the development of device integration for optoelectronic system applications remains a huge challenge.Herein,we report a facile method for patterned-growth of high-qualityβ-Ga_(2)O_(3)thin films,which are assembled into a photodetectors array comprising 8×8 device units.A representative detector exhibits outstanding photoresponse performance,in terms of an ultra-low dark current of 0.62 pA,a large Ilight/Idark ratio exceeding 10^(4),a high responsivity of 0.72 A W^(-1) and a decent specific detectivity of 4.18×10^(11)Jones,upon 265 nm DUV illumination.What is more,the DUV/visible(250/400 nm)rejection ratio is as high as 10^(3) with a sharp response cut-off wave length at 280 nm.Further optoelectronic analysis reveals that the photodetectors array has good uniformity and repeatability,endowing it the capability to serve as a reliable DUV light image sensor with a decent spatial resolution.These results suggest that the proposed technique offers an effective avenue for patterned growth ofβ-Ga_(2)O_(3)thin films for multifunctional DUV optoelectronic applications.
基金Research Grant Council of Hong Kong(15205619)the Shenzhen Science and Technology Innovation Commission(JCYJ20180507183424383)National Natural Science Foundation of China(61851402).
文摘Conventional frame-based image sensors suffer greatly from high energy consumption and latency.Mimicking neurobiological structures and functionalities of the retina provides a promising way to build a neuromorphic vision sensor with highly efficient image processing.In this review article,we will start with a brief introduction to explain the working mechanism and the challenges of conventional frame-based image sensors,and introduce the structure and functions of biological retina.In the main section,we will overview recent developments in neuromorphic vision sensors,including the silicon retina based on conventional Si CMOS digital technologies,and the neuromorphic vision sensors with the implementation of emerging devices.Finally,we will provide a brief outline of the prospects and outlook for the development of this field.
基金the National Natural Science Foundation of China (No.10075029).
文摘The quality of dark output images from the CMOS (complementarymetal oxide semiconductor) black and white (B & W) digital imagesensors captured before and after γ-ray irradiation was studied. Thecharacteristic parameters of the dark output images captured atdifferent radiation dose, e.g. average brightness and itsnon-uniformity of dark out- put images, were analyzed by our testsoftware. The primary explanation for the change of the parameterswith the radi- ation dose was given.
基金Supported by National Natural Science Foundation of China (No.60576025).
文摘A double sampling circuit to eliminating fixed pattern noise(FPN) in CMOS image sensor (CIS) is presented. Double sampling is implemented by column switch capacitor amplifier directly, and offset compensation is added to the amplifier to suppress column FPN. The amplifier is embedded in a 64×64 CIS and successfully fabricated with chartered 0.35 μm process. Theory analysis and circuit simulation indicate that FPN can be suppressed from millivolt to microvolt. Test results show that FPN is smaller than one least-significant bit of 8 bit ADC. FPN is reduced to an acceptable level with double sampling technique implemented with switch capacitor amplifier.
基金supported by the National Natural Science Foundation of China(No.61575059,No.61675062,No.21501038)the Fundamental Research Funds for the Central Universities(No.JZ2018HGPB0275,No.JZ2018HGTA0220,and No.JZ2018HGXC0001).
文摘In this study,we have developed a high-sensitivity,near-infrared photodetector based on PdSe2/GaAs heterojunction,which was made by transferring a multilayered PdSe2 film onto a planar GaAs.The as-fabricated PdSe2/GaAs heterojunction device exhibited obvious photovoltaic behavior to 808 nm illumination,indicating that the near-infrared photodetector can be used as a self-driven device without external power supply.Further device analysis showed that the hybrid heterojunction exhibited a high on/off ratio of 1.16×10^5 measured at 808 nm under zero bias voltage.The responsivity and specific detectivity of photodetector were estimated to be 171.34 mA/W and 2.36×10^11 Jones,respectively.Moreover,the device showed excellent stability and reliable repeatability.After 2 months,the photoelectric characteristics of the near-infrared photodetector hardly degrade in air,attributable to the good stability of the PdSe2.Finally,the PdSe2/GaAs-based heterojunction device can also function as a near-infrared light sensor.
基金This work was supported by the National High Technology Research and Development Program("863"Program) of China ( ContractNo 2007AA04Z258)
文摘Visual image sensor is developed to detect the weld pool images in pulsed MIG welding. An exposure controller, which is composed of the modules of the voltage transforming, the exposure parameters presetting, the complex programmable logic device （CPLD） based logic controlling, exposure signal processing, the arc state detecting, the mechanical iris driving and so on, is designed at first. Then, a visual image sensor consists of an ordinary CCD camera, optical system and exposure controller is established. The exposure synchronic control logic is described with very-high-speed integrated circuit hardware description language （VHDL） and programmed with CPLD , to detect weld pool images at the stage of base current in pulsed MIG welding. Finally, both bead on plate welding and V groove filled welding are carried out, clear and consistent weld pool images are acquired.
基金Supported by National Natural Science Foundation of China (No.60806010,No.60976030)Tianjin Innovation Special Funds for Science and Technology (No.05FZZDGX00200)
文摘A low cost of die area and power consumption CMOS image sensor readout circuit with fixed pattern noise(FPN) cancellation is proposed.By using only one coupling capacitor and switch in the double FPN cancelling correlative double sampling(CDS),pixel FPN is cancelled and column FPN is stored and eliminated by the sampleand-hold operation of digitally programmable gain amplifier(DPGA).The bandwidth balance technology based on operational amplifier(op-amp) sharing is also introduced to decrease the power dissi...
基金supported by the Tianjin Key Laboratory of Imaging and Sensing Microelectronic Technology。
文摘A signal chain model of single-bit and multi-bit quanta image sensors(QISs)is established.Based on the proposed model,the photoresponse characteristics and signal error rates of QISs are investigated,and the effects of bit depth,quantum efficiency,dark current,and read noise on them are analyzed.When the signal error rates towards photons and photoelectrons counting are lower than 0.01,the high accuracy photon and photoelectron counting exposure ranges are determined.Furthermore,an optimization method of integration time to ensure that the QIS works in these high accuracy exposure ranges is presented.The trade-offs between pixel area,the mean value of incident photons,and integration time under different illuminance level are analyzed.For the 3-bit QIS with 0.16 e-/s dark current and 0.21 e-r.m.s.read noise,when the illuminance level and pixel area are 1 lux and 1.21μm^(2),or 10000 lux and 0.21μm^(2),the recommended integration time is 8.8 to 30 ms,or 10 to21.3μs,respectively.The proposed method can guide the design and operation of single-bit and multi-bit QISs.
