The novel integrated circuit (IC) temperature sensor presented in this paper works similarly as a two terminal Zener, has breakdown voltage directly proportional to Kelvin temperature at 10 mV/℃, with typical error ...The novel integrated circuit (IC) temperature sensor presented in this paper works similarly as a two terminal Zener, has breakdown voltage directly proportional to Kelvin temperature at 10 mV/℃, with typical error of less than ±1.0℃ over a temperature range from -50℃ to +125℃. In addition to all the features that conventional IC temperature sensors have, the new device also has very low static power dissipation ( 0.5 mW ) , low output impedance ( less than 1Ω), excellent stability, high reproducibility, and high precision. The sensor's circuit design and layout are discussed in detail. Applications of the sensor include almost any type of temperature sensing over the range of -50℃-+125℃. The low impedance and linear output of the device make interfacing the readout or control circuitry especially easy. Due to the excellent performance and low cost of this sensor, more applications of the sensor over wide temperature range are expected.展开更多
A CMOS compatible P＋/Nwell/Psub double junction photodiode pixel was proposed, which can effi- ciently detect fluorescence from CsI（T1） scintillation in an X-ray sensor. Photoelectric and spectral responses of P＋/...A CMOS compatible P＋/Nwell/Psub double junction photodiode pixel was proposed, which can effi- ciently detect fluorescence from CsI（T1） scintillation in an X-ray sensor. Photoelectric and spectral responses of P＋/Nwell, NweE1/Psub and P＋/Nwell/Psub photodiodes were analyzed and modeled. Simulation results show P＋/Nweu/Psub photodiode has larger photocurrent than P＋/Nwetl photodiode and Nweu/Psub photodiode, and its spectral response is more in accordance with CsI（T1） fluorescence spectrum. Improved P＋/Nweu/Psub photodiode detecting CsI（T1） fluorescence was designed in CSMC 0.5 #m CMOS process, CTIA （capacitive transimpedance amplifier） architecture was used to readout photocurrent signal. CMOS X-ray sensor IC prototype contains 8 × 8 pixel array and pixel pitch is 100 × 100 μm2. Testing results show the dark current of the improved P＋/Nwell/Psub photodiode （6.5 pA） is less than that of P＋/Nwell and P＋/Nwell/Psub photodiodes （13 pA and 11 pA respectively）. The sen- sitivity of P＋/Nwell/Psub photodiode is about 20 pA/lux under white LED. The spectrum response of P＋/Nwell/Psub photodiode ranges from 400 nm to 800 nm with a peak at 532 nm, which is in accordance with the fluorescence spectrum of Csl（T1） in an indirect X-ray sensor. Preliminary testing results show the sensitivity of X-ray sensor IC under Cu target X-ray is about 0.21 V.m^2/W or 5097e-/pixel @ 8.05 keV considering the pixel size, integration time and average energy of X-ray photons.展开更多
文摘The novel integrated circuit (IC) temperature sensor presented in this paper works similarly as a two terminal Zener, has breakdown voltage directly proportional to Kelvin temperature at 10 mV/℃, with typical error of less than ±1.0℃ over a temperature range from -50℃ to +125℃. In addition to all the features that conventional IC temperature sensors have, the new device also has very low static power dissipation ( 0.5 mW ) , low output impedance ( less than 1Ω), excellent stability, high reproducibility, and high precision. The sensor's circuit design and layout are discussed in detail. Applications of the sensor include almost any type of temperature sensing over the range of -50℃-+125℃. The low impedance and linear output of the device make interfacing the readout or control circuitry especially easy. Due to the excellent performance and low cost of this sensor, more applications of the sensor over wide temperature range are expected.
基金supported by the National Natural Science Foundation of China(No.61076075)the Natural Science Foundation of Zhejiang Province(No.Y1100287)
文摘A CMOS compatible P＋/Nwell/Psub double junction photodiode pixel was proposed, which can effi- ciently detect fluorescence from CsI（T1） scintillation in an X-ray sensor. Photoelectric and spectral responses of P＋/Nwell, NweE1/Psub and P＋/Nwell/Psub photodiodes were analyzed and modeled. Simulation results show P＋/Nweu/Psub photodiode has larger photocurrent than P＋/Nwetl photodiode and Nweu/Psub photodiode, and its spectral response is more in accordance with CsI（T1） fluorescence spectrum. Improved P＋/Nweu/Psub photodiode detecting CsI（T1） fluorescence was designed in CSMC 0.5 #m CMOS process, CTIA （capacitive transimpedance amplifier） architecture was used to readout photocurrent signal. CMOS X-ray sensor IC prototype contains 8 × 8 pixel array and pixel pitch is 100 × 100 μm2. Testing results show the dark current of the improved P＋/Nwell/Psub photodiode （6.5 pA） is less than that of P＋/Nwell and P＋/Nwell/Psub photodiodes （13 pA and 11 pA respectively）. The sen- sitivity of P＋/Nwell/Psub photodiode is about 20 pA/lux under white LED. The spectrum response of P＋/Nwell/Psub photodiode ranges from 400 nm to 800 nm with a peak at 532 nm, which is in accordance with the fluorescence spectrum of Csl（T1） in an indirect X-ray sensor. Preliminary testing results show the sensitivity of X-ray sensor IC under Cu target X-ray is about 0.21 V.m^2/W or 5097e-/pixel @ 8.05 keV considering the pixel size, integration time and average energy of X-ray photons.
