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Low-temperature NH_(3) abatement via selective oxidation over a supported copper catalyst with high Cu^(+) abundance 被引量:1
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作者 Zhiming Yang Lin Peng +3 位作者 Leneng Yang Mingli Fu Daiqi Ye Peirong Chen 《Journal of Environmental Sciences》 SCIE EI CAS CSCD 2024年第9期12-22,共11页
Selective catalytic NH_(3)-to-N_(2) oxidation(NH_(3)-SCO)is highly promising for abating NH_(3) emissions slipped from stationary flue gas after-treatment devices.Its practical application,however,is limited by the no... Selective catalytic NH_(3)-to-N_(2) oxidation(NH_(3)-SCO)is highly promising for abating NH_(3) emissions slipped from stationary flue gas after-treatment devices.Its practical application,however,is limited by the non-availability of low-cost catalysts with high activity and N_(2) selectivity.Here,using defect-rich nitrogen-doped carbon nanotubes(NCNT-AW)as the support,we developed a highly active and durable copper-based NH_(3)-SCO catalyst with a high abundance of cuprous(Cu^(+))sites.The obtained Cu/NCNT-AW catalyst demonstrated outstanding activity with a T_(50)(i.e.the temperature to reach 50% NH_(3) conversion)of 174℃ in the NH_(3)-SCO reaction,which outperformed not only the Cu catalyst supported on N-free O-functionalized CNTs(OCNTs)or NCNT with less surface defects,but also those most active Cu catalysts in open literature.Reaction kinetics measurements and temperature-programmed surface reactions using NH_(3)as a probe molecule revealed that the NH_(3)-SCO reaction on Cu/NCNT-AW follows an internal selective catalytic reaction(i-SCR)route involving nitric oxide(NO)as a key intermediate.According to mechanistic investigations by X-ray photoelectron spectroscopy,Raman spectroscopy,and X-ray absorption spectroscopy,the superior NH_(3)-SCO performance of Cu/NCNT-AW originated from a synergy of surface defects and N-dopants.Specifically,surface defects promoted the anchoring of Cu O nanoparticles on N-containing sites and,thereby,enabled efficient electron transfer from N to Cu O,increasing significantly the fraction of SCR-active Cu^(+)sites in the catalyst.This study puts forward a new idea for manipulating and utilizing the interplay of defects and N-dopants on carbon surfaces to fabricate Cu^(+)-rich Cu catalysts for efficient abatement of slip NH_(3)emissions via selective oxidation. 展开更多
关键词 NH_(3)-SCO XANES Localized etching N-DOPING N_(2) selectivity i-scr
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基于LabVIEW和数据采集卡选相合闸技术的研究
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作者 刘会艳 史济炜 朱文明 《电器与能效管理技术》 2015年第22期11-14,72,共5页
研究了选相合闸的技术解决方案,实现了大容量晶闸管的触发与控制,并基于NI公司的数据采集卡和LabVIEW编程软件设计了硬件触发选相合闸系统,实现了高精度合闸相角控制。所开发的选相合闸系统满足标准规定的合闸相角精度,能够应用于断路... 研究了选相合闸的技术解决方案,实现了大容量晶闸管的触发与控制,并基于NI公司的数据采集卡和LabVIEW编程软件设计了硬件触发选相合闸系统,实现了高精度合闸相角控制。所开发的选相合闸系统满足标准规定的合闸相角精度,能够应用于断路器瞬态试验、短路试验。 展开更多
关键词 选相合闸 短路试验 晶闸管 脉冲变压器 数据采集卡
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多层NMOS技术对I/O接口的ESD保护作用
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作者 李翠 柳海生 袁晓岚 《微处理机》 2005年第6期7-9,共3页
本文提出了NMOS堆栈触发控制硅整流器(SNTSCR)作为ESD箝制工艺用来保护CMOS芯片的I/O端。与没有使用厚栅氧化层来克服栅氧化可靠性的CMOS工序充分兼容。在0.35μmCMOS工序中,有不同参数布局的ESD SNTSCR工艺已经研究过。带有120μm NMO... 本文提出了NMOS堆栈触发控制硅整流器(SNTSCR)作为ESD箝制工艺用来保护CMOS芯片的I/O端。与没有使用厚栅氧化层来克服栅氧化可靠性的CMOS工序充分兼容。在0.35μmCMOS工序中,有不同参数布局的ESD SNTSCR工艺已经研究过。带有120μm NMOS堆栈沟道的I/O端的人体模式ESD(HBM ESD)电平可以借助只有60μm/0.35μm的SNTSCR由2kv提高到8kv。 展开更多
关键词 静电放电(ESD) ESD保护 多种组合电平I/O端 控制硅整流器(SCR)
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