Effects of Si^3＋ and H＋ irradiation on tungsten were investigated by internal friction （IF） technique. Scanning electron microscope （SEM） analysis revealed that sequential dual Si＋H irradiation resulted in more...Effects of Si^3＋ and H＋ irradiation on tungsten were investigated by internal friction （IF） technique. Scanning electron microscope （SEM） analysis revealed that sequential dual Si＋H irradiation resulted in more serious damage than single Si irradiation. After irradiation, the IF background was significantly enhanced. Besides, two obvious IF peaks were initially found in tem- perature range of 70～330 K in the sequential Si＋H irradiated tungsten sample. The mechanism of increased IF background for the irradiated samples was suggested to originate from the high density dislocations induced by ion irradiation. On the other hand, the relaxation peak PL and non-relaxation peak PH in the Si＋H irradiated sample were ascribed to the interaction process of hydrogen atoms with mobile dislocations and transient processes of hydrogen redistribution, respectively. The obtained experimental results verified the high sensitivity of IF method on the irradiation damage behaviors in nuclear materials.展开更多
基金supported by National Natural Science Foundation of China （Nos. 11075177, 11175203, 91126002） and Strategic Priority Research Program of Chinese Academy of Sciences （Nos. KJCX2-YW-N35, XDA03010303） and the National Magnetic Confinement Pusion Program of China （No. 2011GB108004） and MOST of China （Nos. 2010CB832902, 2010CB832904）
文摘Effects of Si^3＋ and H＋ irradiation on tungsten were investigated by internal friction （IF） technique. Scanning electron microscope （SEM） analysis revealed that sequential dual Si＋H irradiation resulted in more serious damage than single Si irradiation. After irradiation, the IF background was significantly enhanced. Besides, two obvious IF peaks were initially found in tem- perature range of 70～330 K in the sequential Si＋H irradiated tungsten sample. The mechanism of increased IF background for the irradiated samples was suggested to originate from the high density dislocations induced by ion irradiation. On the other hand, the relaxation peak PL and non-relaxation peak PH in the Si＋H irradiated sample were ascribed to the interaction process of hydrogen atoms with mobile dislocations and transient processes of hydrogen redistribution, respectively. The obtained experimental results verified the high sensitivity of IF method on the irradiation damage behaviors in nuclear materials.
