To study the effect of annealing temperature on the joints between magnesium and aluminum alloys, and improve the properties of bonding layers, composite plates of magnesium alloy（AZ31 B） and aluminum alloy（6061） ...To study the effect of annealing temperature on the joints between magnesium and aluminum alloys, and improve the properties of bonding layers, composite plates of magnesium alloy（AZ31 B） and aluminum alloy（6061） were welded using the vacuum diffusion bonding method. The composite specimens were continuously annealed in an electrical furnace under the protection of argon gas. The microstructures were then observed using scanning electron microscopy. X-ray diffractometry was used to investigate the residual stresses in the specimens. The elemental distribution was analyzed with an electron probe micro analyzer. The tensile strength and hardness were also measured. Results show that the diffusion layers become wide as the heat treatment temperature increases, and the residual stress of the specimen is at a minimum and tensile strength is the largest when being annealed at 250 ℃. Therefore, 250 ℃ is the most appropriate annealing temperature.展开更多
The dislocation pipe diffusion of Mn during annealing of 5Mn steel was experimentally investigated using transmission electron microscopy （TEM）. Many dislocations existed inside the ferrite and terminated at the α/...The dislocation pipe diffusion of Mn during annealing of 5Mn steel was experimentally investigated using transmission electron microscopy （TEM）. Many dislocations existed inside the ferrite and terminated at the α/γin- terface of the sample after intercritieal annealing at 650 ℃ for 1 min. Line scans of Mn distribution demonstrated a high Mn concentration in austenite and Mn enrichment at dislocations, indicating that the dislocation pipe diffusion of Mn during intercritical annealing occurred in addition to the γ/α interface diffusion. In-situ TEM observations at 500 ℃revealed that due to Ostwald ripening, large cementite precipitates grew while small cementite precipitates dissolved via Mn diffusion along the dislocations between them.展开更多
The powder X-ray diffraction patterns of LaFell.sSil.5 compounds annealed at different high temperatures from 1323 K （5 h） to 1623 K （2 h） show that a large amount of 1：13 phase begins to form in LaFell.sSiL5 com...The powder X-ray diffraction patterns of LaFell.sSil.5 compounds annealed at different high temperatures from 1323 K （5 h） to 1623 K （2 h） show that a large amount of 1：13 phase begins to form in LaFell.sSiL5 compound annealed at 1423 K （5 h）. In the temperature range from 1423 to 1523 K, ^-Fe and LaFeSi phases rapidly decrease to form 1：13 phase. LaFeSi phase is rarely observed, and the most amount of 1：13 phase is obtained in the compound annealed at 1523 K （5 h）. With the annealing temperature increasing to 1573 and 1623 K, LaFeSi is detected again in the LaFell.sSil.s compound. According to the results of annealing at different high-temperatures, the Lal-xCexFelt.sSit.5 compounds are annealed at high temperatures of 1373 K （2 h） ＋ 1523 K （5 h）. The main phase is NaZn13-type phase, and the impurity is a small amount of et-Fe in Lal-xCexFexx.sSil.5 compounds with 0 〈 x 〈 0.35, and there is a large amount of CeaFe17 phase in Lao.sCeo.sFela.sSil.s. It indicates that the substitution of cerium atoms for La in LaFelLsSil.5 compounds has limit. At the same time, the substitution of Ce for La has large effect on magnetocaloric properties. With increasing Ce content from x = 0 to x = 0.35, the Curie temperature decreases linearly from 196 to 168 K, the magnetic entropy change increases from 16.5 to 57.3 J-kg-kK-1 in a low magnetic field change of 0-2 T, and the thermal hysteresis also increases from 3 K to 8 K.展开更多
The magnetic properties and microstructure of diffusion annealed [Ta/Nd/NdFeB/Nd/Ta]thin films have been investigated. The films were deposited on Si substrate with various thickness ratio of Nd/NdFeB layer (R=0～3.3)...The magnetic properties and microstructure of diffusion annealed [Ta/Nd/NdFeB/Nd/Ta]thin films have been investigated. The films were deposited on Si substrate with various thickness ratio of Nd/NdFeB layer (R=0～3.3), then diffused and crystallized by annealing at 650℃ for 10 min. The film without Nd layer showed soft magnetic behavior and high content of a-Fe phase. The films with R > =1 showed good hard magnetic properties with the high coercivity of about 20 kOe.展开更多
High-temperature annealing of the atomic layer deposition （ALD） of Al2O3 films on 4H-SiC in O 2 atmosphere is studied with temperature ranging from 800℃ to 1000℃. It is observed that the surface morphology of Al2O...High-temperature annealing of the atomic layer deposition （ALD） of Al2O3 films on 4H-SiC in O 2 atmosphere is studied with temperature ranging from 800℃ to 1000℃. It is observed that the surface morphology of Al2O3 films annealed at 800℃ and 900℃ is pretty good, while the surface of the sample annealed at 1000℃ becomes bumpy. Grazing incidence X-ray diffraction （GIXRD） measurements demonstrate that the as-grown films are amorphous and begin to crystallize at 900℃. Furthermore, C–V measurements exhibit improved interface characterization after annealing, especially for samples annealed at 900℃ and 1000℃. It is indicated that high-temperature annealing in O2 atmosphere can improve the interface of Al2O3 /SiC and annealing at 900℃ would be an optimum condition for surface morphology, dielectric quality, and interface states.展开更多
Grain boundary diffusion process(GBDP)has been developed as an effective approach to increase the coercivity of sintered Nd-Fe-B magnets by regulating the compositions and phase distributions near grain boundaries.Thi...Grain boundary diffusion process(GBDP)has been developed as an effective approach to increase the coercivity of sintered Nd-Fe-B magnets by regulating the compositions and phase distributions near grain boundaries.This work aims to explore how to select the optimum annealing temperature after GBDP.In this work GBDP was performed on a sintered Nd-Fe-B magnet using Dy_(70)Cu_(30) alloy.After GBDP the low eutectic temperature of the grain boundary phases decreases from the initial 492 to 451℃.The magnetic property dependent on different annealing temperatures near the low eutectic temperature was studied.The magnetic properties,especially the squareness factor of demagnetization curve show a strong dependence on the annealing temperature.After GBDP the optimal magnetic properties can be obtained after annealing just above the low eutectic temperature of the grain boundary phases.The mechanism is discussed based on the microstructure analysis.展开更多
AZ31/Mg3Y composites with a layer thickness of 100-200μm were fabricated by accumulated rolling bonding(ARB),which was followed by diffusion annealing at 300℃ for 0-32 h.An interface layer,containing numerous Al-Y p...AZ31/Mg3Y composites with a layer thickness of 100-200μm were fabricated by accumulated rolling bonding(ARB),which was followed by diffusion annealing at 300℃ for 0-32 h.An interface layer,containing numerous Al-Y precipitates,is formed in the Mg3Y layer that is adjacent to the interface as a result of Al diffusing from the AZ31 layers into the Mg3Y layers.The thickness of the interface layer gets increased and more precipitates are formed in the interface layer with the extension of the annealing time.The microhardness of the AZ31 and Mg3Y layer decreases firstly and then reaches a stable value,while the microhardness of the interface layer increases gradually with the extension of the annealing time.The AZ31/Mg3Y composites exhibit equivalent strength but increased ductility after diffusion annealing,in comparison to the as-rolled AZ31/Mg3Y composite.In addition,the AZ31/Mg3Y composites after annealing always present higher strength and ductility than AZ31/AZ31 composite,which was fabricated by the same process as that for the AZ31/Mg3Y composites.Hetero-deformation induced strengthening also plays an important role in the excellent strength and ductility of the annealed AZ31/Mg3Y composite.This study can provide a direction for improving the plasticity and strength of magnesium alloys synergistically.展开更多
Bubble evolution in low energy and high dose He-implanted 6H-SiC upon thermal annealing is studied. The （0001）-oriented 6H-SiC wafers are implanted with 15keV helium ions at a dose of 1×10^17 cm^-2 at room temp...Bubble evolution in low energy and high dose He-implanted 6H-SiC upon thermal annealing is studied. The （0001）-oriented 6H-SiC wafers are implanted with 15keV helium ions at a dose of 1×10^17 cm^-2 at room temperature. The samples with post-implantation are annealed at temperatures of 1073, 1173, 1273, and 1473K for 30rain. He bubbles in the wafers are examined via cross-sectional transmission electron microscopy （XTEM） analysis. The results present that nanoscale bubbles are almost homogeneously distributed in the damaged layer of the as-implanted sample, and no significant change is observed in the He-implanted sample after 1073 K annealing. Upon 1193 K annealing, almost full recrystallization of He-implantation-induced amorphization in 6H-SiC is observed. In addition, the diameters of He bubbles increase obviously. With continually increasing temperatures to 1273K and 1473 K, the diameters of He bubbles increase and the number density of lattice defects decreases. The growth of He bubbles after high temperature annealingabides by the Ostwald ripening mechanism. The mean diameter of He bubbles located at depths of 120-135 nm as a function of annealing temperature is fitted in terms of a thermal activated process which yields an activation energy of 1.914＋0.236eV.展开更多
The effect of high-temperature annealing on A1N thin film grown by metalorganic chemical vapor deposition was investigated using atomic force microscopy, Raman spectroscopy, and deep ultra-violet photoluminescence （P...The effect of high-temperature annealing on A1N thin film grown by metalorganic chemical vapor deposition was investigated using atomic force microscopy, Raman spectroscopy, and deep ultra-violet photoluminescence （PL） with the excitation wavelength as short as ~ 177 nm. Annealing experiments were carded out in either N2 or vacuum atmosphere with the annealing temperature ranging from 1200 ℃ to 1600 ℃. It is found that surface roughness reduced and compres- sive strain increased with the annealing temperature increasing in both annealing atmospheres. As to optical properties, a band-edge emission peak at 6.036 eV and a very broad emission band peaking at about 4.7 eV were observed in the photoluminescence spectrum of the as-grown sample. After annealing, the intensity of the band-edge emission peak varied with the annealing temperature and atmosphere. It is also found that a much stronger emission band ranging from 2.5 eV to 4.2 eV is superimposed on the original spectra by annealing in either N2 or vacuum atmosphere. We attribute these deep-level emission peaks to the VAL--ON complex in the A1N material.展开更多
The diffusion and the activation of phosphorus in phosphorus and fluorine co-implanted Ge after being annealed by excimer laser are investigated.The results prove that the fluorine element plays an important role in s...The diffusion and the activation of phosphorus in phosphorus and fluorine co-implanted Ge after being annealed by excimer laser are investigated.The results prove that the fluorine element plays an important role in suppressing phosphorus diffusion and enhancing phosphorus activation.Moreover,the rapid thermal annealing process is utilized to evaluate and verify the role of fluorine element.During the initial annealing of co-implanted Ge,it is easier to form high bonding energy FnVm clusters which can stabilize the excess vacancies,resulting in the reduced vacancy-assisted diffusion of phosphorus.The maximum activation concentration of about 4.4 ×10^(20) cm^(-3) with a reduced diffusion length and dopant loss is achieved in co-implanted Ge that is annealed at a tailored laser fluence of 175 mJ/cm^(2).The combination of excimer laser annealing and co-implantation technique provides a reference and guideline for high level n-type doping in Ge and is beneficial to its applications in the scaled Ge MOSFET technology and other devices.展开更多
Mn distribution and austenite morphology at the early stage of intercritical annealing of 5Mn steel were investigated. It was experimentally demonstrated that a newly formed 20 nm-thick austenite was formed without th...Mn distribution and austenite morphology at the early stage of intercritical annealing of 5Mn steel were investigated. It was experimentally demonstrated that a newly formed 20 nm-thick austenite was formed without the partitioning of Mn. The elemental analysis confirmed that the growth of austenite should be controlled by the diffusion of C prior to the diffusion of Mn at a low heating rate. The austenite growth started under negligible-partitioning local equilibrium mode and then switched to partitioning local equilibrium mode. Mn segregation at the γ/α interface suggested that the collector plate mechanism was the essential way of Mn partitioning at the early stage of austenite growth.展开更多
The atomic-scale surface roughness of Si(110) reconstructed via high-temperature Ar annealing is immediately increased by non uniform accidental oxidation during the unloading process (called reflow oxidation) during ...The atomic-scale surface roughness of Si(110) reconstructed via high-temperature Ar annealing is immediately increased by non uniform accidental oxidation during the unloading process (called reflow oxidation) during high-temperature Ar annealing. In particular, for a reconstructed Si(110) surface, characteristic line-shaped oxidation occurs at preferential oxidation sites appearing in pentagonal pairs in the directions of Si[-112] and/or [-11-2]. We previously reported that the roughness increase of reconstructed Si(110) due to reflow oxidation can be restrained by replacing Ar gas with H2 gas at 1000°C during the cooling to 100°C after high-temperature Ar annealing. It was speculated that preferential oxidation sites on reconstructed Si(110) were eliminated by H2 gas etching and hydrogen termination of dangling bonds. Thus, it is necessary to investigate the effect of H2 gas etching and hydrogen termination behavior on the reconstructed Si(110) surface structure. In this study, we evaluated in detail the relationship between the temperature at which the H2 gas replaces the Ar in high-temperature Ar annealing and the reconstructed Si(110) surface structure. The maximum height of the roughness on the reconstructed surface was the same as if Ar gas was used when the H2 gas introduction temperature was 200°C, although the amount of reflow oxidation was decreased to 70% by hydrogen termination. Furthermore, line-shaped oxidation still occurs when H2 gas replaces Ar at this low temperature. Therefore, we conclude that oxidation is caused by slight Si etching at low temperatures, and thus the preferential oxidation sites on the reconstructed structure must be eliminated by hydrogen etching in order to form an atomically smooth Si(110) surface.展开更多
The effect of high-temperature annealing on the yellow and blue luminescence of the undoped GaN is investi- gated by photoluminescenee （PL） and x-ray photoelectron spectroscopy （XPS）. It is found that the band-edg...The effect of high-temperature annealing on the yellow and blue luminescence of the undoped GaN is investi- gated by photoluminescenee （PL） and x-ray photoelectron spectroscopy （XPS）. It is found that the band-edge emission in the GaN apparently increases, and the yellow luminescence （YL） and blue luminescence （BL） bands dramatically decrease after annealing at 700℃. At the annealing temperature higher than 900℃, the YL and BL intensities show an enhancement for the nitrogen annealed GaN. This fact should be attributed to the increment of the Ga and N vacancies in the GaN decomposition. However, the integrated PL intensity of the oxygen an- nealed GaN decreases at the temperature ranging from 900℃ to 1000℃. This results from the capture of many photo-generated holes by high-density surface states. XPS characterization confirms that the high-density surface states mainly originate from the incorporation of oxygen atoms into GaN at the high annealing temperature, and even induces the 0.34eV increment of the upward band bending for the oxygen annealed GaN at 1000℃.展开更多
Zr-Si-N films were deposited by RF magnetron sputtering (MS) technique. A Cu film on the top of Zr-Si-N films was prepared by DC pulsed magnetron sputtering. The Cu/Zr-Si-N systems were annealed in vacuum and N2/H2 ga...Zr-Si-N films were deposited by RF magnetron sputtering (MS) technique. A Cu film on the top of Zr-Si-N films was prepared by DC pulsed magnetron sputtering. The Cu/Zr-Si-N systems were annealed in vacuum and N2/H2 gas mixture at 800°C, respectively. The structure of the films were characterized by X-ray diffraction (XRD), Auger electron spectroscopy (AES) and four-point probe method. The sheet resistances of the Cu/Zr-Si-N/Si contact systems annealed in N2/H2 gas mixture were lower than those of the specimens annealed in vacuum at 800°C. The residual oxygen contamination from vacuum annealing ambience influences the sheet resistances of the Cu/Zr-Si-N/Si contact systems due to residual oxygen contamination and/or voids in Cu films. Though thermal stabilities of the Cu/Zr-Si-N/Si systems were maintained up to 800°C when annealed in vacuum and N2/H2 gas mixture, the changes of thermal stability of specimens were noticeable. The vacuum can accelerate the oxidation and decomposition of Zr-Si-N barrier. On the contrary, N2/H2 gas mixture prevent from the Zr-Si-N barrier oxidation and decomposition.展开更多
This study developed a five-layer Mg alloy laminate(pure Mg/AZ31/AZ91/AZ31/pure Mg)through an innovative synergistic strategy involving Al-element gradient design,extrusion,and short-term annealing.Microstructural cha...This study developed a five-layer Mg alloy laminate(pure Mg/AZ31/AZ91/AZ31/pure Mg)through an innovative synergistic strategy involving Al-element gradient design,extrusion,and short-term annealing.Microstructural characterization revealed hierarchical heterogeneities in grain size,texture intensity,dislocation density,and precipitated phases,accompanied by the formation of annealing twinning in pure Mg layer—a phenomenon rarely documented in Mg alloys.Mechanical tests demonstrated significant strengthening effects in all annealed samples,particularly in the 300℃/30 min annealed sample,which achieved the optimal comprehensive mechanical properties.The enhanced strength originated from the synergistic interaction among element-diffusion-induced solid solution strengthening,nanoscale β-Mg_(17)Al_(12) precipitation,and hetero-deformation-induced(HDI)strengthening.This approach breaks the strength-ductility trade-off induced by traditional annealing processes,offering a new paradigm for designing high-performance Mg alloy laminates.展开更多
Improving solar cell performance by increasing solar cell efficiency by various process optimization had always been a simple straight-forward methodology followed in a R&D or in a solar cell manufacturing company...Improving solar cell performance by increasing solar cell efficiency by various process optimization had always been a simple straight-forward methodology followed in a R&D or in a solar cell manufacturing company. This is also the most cost-effective practice to improve a product performance using the same technology without the need to procure alternative or expensive raw materials or by adopting advanced solar cell processing techniques. Aluminium Back Surface Field (Al-BSF) technology using multi-crystalline wafers (mc-Si) had been a well-established and a dominant product in the solar industry for more than two decades. However, as the industry progresses, the demand for high efficiency solar cells and modules started going up and full area Aluminium BSF based cells suffers from a lot of inherent limitations on cell efficiency. This is primarily due to the intrinsic high density of crystal lattice defects or otherwise called as grain boundary defects present dominantly only in mc-Si wafers. These grain boundaries tends to accumulate several defects and become trap centres which cause high recombination for minority carriers thereby exhibiting lower conversion efficiency and higher dispersion in electrical parameters in batches of tested cells. Years of research using this material have helped to derive the maximum benefits using this mc-Si wafer in producing industrial full area BSF cells and we can say with certainty that the efficiency potential has reached the saturation point with this technology. An interesting development that happened in the area of improving the final product performance using mc-Si wafers at both cell and module level, is by replacing the conventional acid texturing process with an introduction of a nano-texturing process called Metal Catalysed Chemical Etching (MCCE) using specialized chemicals which improves the light trapping capabilities by creation of inverted pyramid texture on the silicon wafer surface and thereby enabling the wafers to absorb sunlight over a broader range of wavelength and incident angle. With this development done in mc-Si wafers in recent past, it is still a daunting task to surpass cell efficiencies beyond 19.0% using this wafer source. Hence for cell manufacturing lines which use mc-Si wafers, there is always a constant need to improve the cell manufacturing processes to reduce the impact of poor intrinsic quality of mc-Si wafers and improve the final product performance without adding any significant cost factor.展开更多
Multilayered Ti-Al based intermetallic sheets were fabricated by sintering alternately layered titanium and aluminum foils.The microstructure and phase formation of the obtained sheets under different sintering condit...Multilayered Ti-Al based intermetallic sheets were fabricated by sintering alternately layered titanium and aluminum foils.The microstructure and phase formation of the obtained sheets under different sintering conditions were evaluated by various techniques.The results reveal that when the sintering temperature is above the melting point of aluminum,the self-propagating high-temperature synthesis reaction occurs between Ti and Al,and forms various phases of Ti-based solid solutions including α-Ti Ti3Al,TiAl,TiAl2 and α-Ti including TiAl3,etc.When the sintering time increased,Ti-based solid solution,TiAl2 and TiAl3 disappeared gradually,and the sheet containing Ti3Al and TiAl phases in a multilayered structure formed finally.A lot of voids were also observed in the sintered structures,which were caused by the melting Al,Kirkendall effect and the difference of molar volumes between reactants and products.The voids were eliminated and a dense sample was obtained by the following hot press.展开更多
The microstructural evolution of a 18R single phase （S 18） alloy during annealing at 773 K for 100 h was investigated in order to reveal the formation mechanism of 14H phase. The results showed that the as-cast S 18...The microstructural evolution of a 18R single phase （S 18） alloy during annealing at 773 K for 100 h was investigated in order to reveal the formation mechanism of 14H phase. The results showed that the as-cast S 18 alloy was composed of 18R phase （its volume fraction exceeds 93%）, W particles and α-Mg phase. The 18R phase in S18 alloy was thermally stable and was not transformed into 14H long period stacking ordered （LPSO） phase during annealing. However, 14H lamellas formed within tiny α-Mg slices, and their average size and volume fraction increased with prolonging annealing time. Moreover, the 14H phase is nucleated within α-Mg independently on the basis of basal stacking faults （SFs）. The broadening growth of 14H lamellas is an interface-controlled process which involves ledges on basal planes, while the lengthening growth is a diffusion-controlled process and is associated with diffusion of solute atoms. The formation mechanism of 14H phase in this alloy could be explained as α-Mg＇→α-Mg＋14H.展开更多
Homogenization annealing of the 7050/6009 bimetal slab prepared by direct-chill casting was investigated and its effects on microstructural evolution, composition distribution and mechanical properties in the interfac...Homogenization annealing of the 7050/6009 bimetal slab prepared by direct-chill casting was investigated and its effects on microstructural evolution, composition distribution and mechanical properties in the interfacial region of the bimetal were studied. The results show that the optimized homogenization annealing process was 460℃for 24 h. After homogenization annealing, the Zn-rich phases and Al15（FeMn）3Si2phases were precipitated at the interface of the bimetal. The diffusion layer thickness of homogenized bimetal increased by 30 μm from 440 to480℃for 24 h, while it increased by 280 μm from 12 to 36 h at 460℃. The Vickers hardnessesat 6009 alloy side and interface of the bimetal decreased after homogenized annealing and grain coarsening was considered asthedominating softening mechanism.The hardness variation at 7050 alloy side was complicated due to the combined action of solution strengthening, dispersion strengthening and dissolution of reinforced phases.展开更多
The effectsof annealing process on the hardness, microstructure, Si diffusion, and the sagging resistance of cold-rolled 4343/3003/4343 Al alloy clad sheets and their 3003 Al alloy core sheets were experimentally inve...The effectsof annealing process on the hardness, microstructure, Si diffusion, and the sagging resistance of cold-rolled 4343/3003/4343 Al alloy clad sheets and their 3003 Al alloy core sheets were experimentally investigated through hardness tests, EBSD observations, EDS analysis, and sagging test.The results showedthat with the increase of annealing temperature, the hardness of both clad sheet and core sheet decreased, while thesaggingresistancesof both clad and core sheets achieved maximum values after annealing at 380℃ for 1h. After annealing at 380℃, the clad layer contained fine and equiaxedrecrystallized grains; the core layer was composed of fully recrystallized coarse grains elongated along the rolling direction. The Si diffusion from the clad layer to the core zone was limited. After annealing at a higher temperature of 440℃ or 550℃, thesaggingresistance of clad sheets worsened precipitously. The grains in the clad layer grew up, obscuring the interface between the clad and core layer; the recrystallized grains in the core layer became finer. Significant amount of Si penetrated into the core layer through the accelerated diffusion. Compared with the microstructure refinement, Si diffusion is the main factor influencing thesaggingresistance.展开更多
基金partially supported by the grant subsidy of the "Nano Project" for Private Universities: 2011-2014 from MEXT, Japansupported by the "Advanced Science Research Laboratory" in Saitama Institute of Technology, Japan
文摘To study the effect of annealing temperature on the joints between magnesium and aluminum alloys, and improve the properties of bonding layers, composite plates of magnesium alloy（AZ31 B） and aluminum alloy（6061） were welded using the vacuum diffusion bonding method. The composite specimens were continuously annealed in an electrical furnace under the protection of argon gas. The microstructures were then observed using scanning electron microscopy. X-ray diffractometry was used to investigate the residual stresses in the specimens. The elemental distribution was analyzed with an electron probe micro analyzer. The tensile strength and hardness were also measured. Results show that the diffusion layers become wide as the heat treatment temperature increases, and the residual stress of the specimen is at a minimum and tensile strength is the largest when being annealed at 250 ℃. Therefore, 250 ℃ is the most appropriate annealing temperature.
基金Item Sponsored by National Key Research and Development Program of China(2016YFB0700402)National Basic Research Program of China(2010CB630800,2015CB921700)+1 种基金National Natural Science Foundation of China(51671112,51471096,51390471,11374174)Tsinghua University Initiative Scientific Research Program(20141081200,20131089311)
文摘The dislocation pipe diffusion of Mn during annealing of 5Mn steel was experimentally investigated using transmission electron microscopy （TEM）. Many dislocations existed inside the ferrite and terminated at the α/γin- terface of the sample after intercritieal annealing at 650 ℃ for 1 min. Line scans of Mn distribution demonstrated a high Mn concentration in austenite and Mn enrichment at dislocations, indicating that the dislocation pipe diffusion of Mn during intercritical annealing occurred in addition to the γ/α interface diffusion. In-situ TEM observations at 500 ℃revealed that due to Ostwald ripening, large cementite precipitates grew while small cementite precipitates dissolved via Mn diffusion along the dislocations between them.
基金supported by the Key Project of National Natural Science Foundation of China (No. 50731007)the National High-Tech Research and Development Program of China (No. 2007AA03Z440)
文摘The powder X-ray diffraction patterns of LaFell.sSil.5 compounds annealed at different high temperatures from 1323 K （5 h） to 1623 K （2 h） show that a large amount of 1：13 phase begins to form in LaFell.sSiL5 compound annealed at 1423 K （5 h）. In the temperature range from 1423 to 1523 K, ^-Fe and LaFeSi phases rapidly decrease to form 1：13 phase. LaFeSi phase is rarely observed, and the most amount of 1：13 phase is obtained in the compound annealed at 1523 K （5 h）. With the annealing temperature increasing to 1573 and 1623 K, LaFeSi is detected again in the LaFell.sSil.s compound. According to the results of annealing at different high-temperatures, the Lal-xCexFelt.sSit.5 compounds are annealed at high temperatures of 1373 K （2 h） ＋ 1523 K （5 h）. The main phase is NaZn13-type phase, and the impurity is a small amount of et-Fe in Lal-xCexFexx.sSil.5 compounds with 0 〈 x 〈 0.35, and there is a large amount of CeaFe17 phase in Lao.sCeo.sFela.sSil.s. It indicates that the substitution of cerium atoms for La in LaFelLsSil.5 compounds has limit. At the same time, the substitution of Ce for La has large effect on magnetocaloric properties. With increasing Ce content from x = 0 to x = 0.35, the Curie temperature decreases linearly from 196 to 168 K, the magnetic entropy change increases from 16.5 to 57.3 J-kg-kK-1 in a low magnetic field change of 0-2 T, and the thermal hysteresis also increases from 3 K to 8 K.
文摘The magnetic properties and microstructure of diffusion annealed [Ta/Nd/NdFeB/Nd/Ta]thin films have been investigated. The films were deposited on Si substrate with various thickness ratio of Nd/NdFeB layer (R=0～3.3), then diffused and crystallized by annealing at 650℃ for 10 min. The film without Nd layer showed soft magnetic behavior and high content of a-Fe phase. The films with R > =1 showed good hard magnetic properties with the high coercivity of about 20 kOe.
基金the National Natural Science Foundation of China(Grant No.61106080)the Major Program of the National Natural Science Foundation of China(Grant No.2013ZX02305)
文摘High-temperature annealing of the atomic layer deposition （ALD） of Al2O3 films on 4H-SiC in O 2 atmosphere is studied with temperature ranging from 800℃ to 1000℃. It is observed that the surface morphology of Al2O3 films annealed at 800℃ and 900℃ is pretty good, while the surface of the sample annealed at 1000℃ becomes bumpy. Grazing incidence X-ray diffraction （GIXRD） measurements demonstrate that the as-grown films are amorphous and begin to crystallize at 900℃. Furthermore, C–V measurements exhibit improved interface characterization after annealing, especially for samples annealed at 900℃ and 1000℃. It is indicated that high-temperature annealing in O2 atmosphere can improve the interface of Al2O3 /SiC and annealing at 900℃ would be an optimum condition for surface morphology, dielectric quality, and interface states.
基金Project supported by the National Natural Science Foundation of China(51901087)Natural Science Foundation of Jiangsu Province(BK20190975,BK20201007)+1 种基金China Postdoctoral Science Foundation(2021M701504)Natural Science Foundation for Colleges and Universities in Jiangsu Province(20KJD470002)。
文摘Grain boundary diffusion process(GBDP)has been developed as an effective approach to increase the coercivity of sintered Nd-Fe-B magnets by regulating the compositions and phase distributions near grain boundaries.This work aims to explore how to select the optimum annealing temperature after GBDP.In this work GBDP was performed on a sintered Nd-Fe-B magnet using Dy_(70)Cu_(30) alloy.After GBDP the low eutectic temperature of the grain boundary phases decreases from the initial 492 to 451℃.The magnetic property dependent on different annealing temperatures near the low eutectic temperature was studied.The magnetic properties,especially the squareness factor of demagnetization curve show a strong dependence on the annealing temperature.After GBDP the optimal magnetic properties can be obtained after annealing just above the low eutectic temperature of the grain boundary phases.The mechanism is discussed based on the microstructure analysis.
基金This work was financially supported by the National Natural Science Foundation of China(Projects 52171102,51971041)the Fundamental Research Funds for the central universities(No.2023CDJXY-018).
文摘AZ31/Mg3Y composites with a layer thickness of 100-200μm were fabricated by accumulated rolling bonding(ARB),which was followed by diffusion annealing at 300℃ for 0-32 h.An interface layer,containing numerous Al-Y precipitates,is formed in the Mg3Y layer that is adjacent to the interface as a result of Al diffusing from the AZ31 layers into the Mg3Y layers.The thickness of the interface layer gets increased and more precipitates are formed in the interface layer with the extension of the annealing time.The microhardness of the AZ31 and Mg3Y layer decreases firstly and then reaches a stable value,while the microhardness of the interface layer increases gradually with the extension of the annealing time.The AZ31/Mg3Y composites exhibit equivalent strength but increased ductility after diffusion annealing,in comparison to the as-rolled AZ31/Mg3Y composite.In addition,the AZ31/Mg3Y composites after annealing always present higher strength and ductility than AZ31/AZ31 composite,which was fabricated by the same process as that for the AZ31/Mg3Y composites.Hetero-deformation induced strengthening also plays an important role in the excellent strength and ductility of the annealed AZ31/Mg3Y composite.This study can provide a direction for improving the plasticity and strength of magnesium alloys synergistically.
基金Supported by the National Natural Science Foundation of China under Grant No 11475229
文摘Bubble evolution in low energy and high dose He-implanted 6H-SiC upon thermal annealing is studied. The （0001）-oriented 6H-SiC wafers are implanted with 15keV helium ions at a dose of 1×10^17 cm^-2 at room temperature. The samples with post-implantation are annealed at temperatures of 1073, 1173, 1273, and 1473K for 30rain. He bubbles in the wafers are examined via cross-sectional transmission electron microscopy （XTEM） analysis. The results present that nanoscale bubbles are almost homogeneously distributed in the damaged layer of the as-implanted sample, and no significant change is observed in the He-implanted sample after 1073 K annealing. Upon 1193 K annealing, almost full recrystallization of He-implantation-induced amorphization in 6H-SiC is observed. In addition, the diameters of He bubbles increase obviously. With continually increasing temperatures to 1273K and 1473 K, the diameters of He bubbles increase and the number density of lattice defects decreases. The growth of He bubbles after high temperature annealingabides by the Ostwald ripening mechanism. The mean diameter of He bubbles located at depths of 120-135 nm as a function of annealing temperature is fitted in terms of a thermal activated process which yields an activation energy of 1.914＋0.236eV.
基金Project supported by the National Basic Research Program of China(Grant No.2012CB619306)863 Program of China(Grant No.2011AA03A101)
文摘The effect of high-temperature annealing on A1N thin film grown by metalorganic chemical vapor deposition was investigated using atomic force microscopy, Raman spectroscopy, and deep ultra-violet photoluminescence （PL） with the excitation wavelength as short as ~ 177 nm. Annealing experiments were carded out in either N2 or vacuum atmosphere with the annealing temperature ranging from 1200 ℃ to 1600 ℃. It is found that surface roughness reduced and compres- sive strain increased with the annealing temperature increasing in both annealing atmospheres. As to optical properties, a band-edge emission peak at 6.036 eV and a very broad emission band peaking at about 4.7 eV were observed in the photoluminescence spectrum of the as-grown sample. After annealing, the intensity of the band-edge emission peak varied with the annealing temperature and atmosphere. It is also found that a much stronger emission band ranging from 2.5 eV to 4.2 eV is superimposed on the original spectra by annealing in either N2 or vacuum atmosphere. We attribute these deep-level emission peaks to the VAL--ON complex in the A1N material.
基金Project supported by the National Natural Science Foundation of China(Grant No.61904155)the Science and technology Project of Fujian Provincial Department of Education,China(Grant No.JAT200484)+1 种基金the Natural Science Foundation of Fujian Province,China(Grant No.2018J05115)the Scientific Research Projects of Xiamen University of Technology,China(Grant No.YKJCX2020078).
文摘The diffusion and the activation of phosphorus in phosphorus and fluorine co-implanted Ge after being annealed by excimer laser are investigated.The results prove that the fluorine element plays an important role in suppressing phosphorus diffusion and enhancing phosphorus activation.Moreover,the rapid thermal annealing process is utilized to evaluate and verify the role of fluorine element.During the initial annealing of co-implanted Ge,it is easier to form high bonding energy FnVm clusters which can stabilize the excess vacancies,resulting in the reduced vacancy-assisted diffusion of phosphorus.The maximum activation concentration of about 4.4 ×10^(20) cm^(-3) with a reduced diffusion length and dopant loss is achieved in co-implanted Ge that is annealed at a tailored laser fluence of 175 mJ/cm^(2).The combination of excimer laser annealing and co-implantation technique provides a reference and guideline for high level n-type doping in Ge and is beneficial to its applications in the scaled Ge MOSFET technology and other devices.
基金Item Sponsored by National Basic Research Program of China(2010CB630800,2015CB921700)National Natural Science Foundation of China(51001064,51471096)+1 种基金Specialized Research Fund for the Doctoral Program of Higher Education of China(20100002120047)Tsinghua University Initiative Scientific Research Program(20141081200)
文摘Mn distribution and austenite morphology at the early stage of intercritical annealing of 5Mn steel were investigated. It was experimentally demonstrated that a newly formed 20 nm-thick austenite was formed without the partitioning of Mn. The elemental analysis confirmed that the growth of austenite should be controlled by the diffusion of C prior to the diffusion of Mn at a low heating rate. The austenite growth started under negligible-partitioning local equilibrium mode and then switched to partitioning local equilibrium mode. Mn segregation at the γ/α interface suggested that the collector plate mechanism was the essential way of Mn partitioning at the early stage of austenite growth.
文摘The atomic-scale surface roughness of Si(110) reconstructed via high-temperature Ar annealing is immediately increased by non uniform accidental oxidation during the unloading process (called reflow oxidation) during high-temperature Ar annealing. In particular, for a reconstructed Si(110) surface, characteristic line-shaped oxidation occurs at preferential oxidation sites appearing in pentagonal pairs in the directions of Si[-112] and/or [-11-2]. We previously reported that the roughness increase of reconstructed Si(110) due to reflow oxidation can be restrained by replacing Ar gas with H2 gas at 1000°C during the cooling to 100°C after high-temperature Ar annealing. It was speculated that preferential oxidation sites on reconstructed Si(110) were eliminated by H2 gas etching and hydrogen termination of dangling bonds. Thus, it is necessary to investigate the effect of H2 gas etching and hydrogen termination behavior on the reconstructed Si(110) surface structure. In this study, we evaluated in detail the relationship between the temperature at which the H2 gas replaces the Ar in high-temperature Ar annealing and the reconstructed Si(110) surface structure. The maximum height of the roughness on the reconstructed surface was the same as if Ar gas was used when the H2 gas introduction temperature was 200°C, although the amount of reflow oxidation was decreased to 70% by hydrogen termination. Furthermore, line-shaped oxidation still occurs when H2 gas replaces Ar at this low temperature. Therefore, we conclude that oxidation is caused by slight Si etching at low temperatures, and thus the preferential oxidation sites on the reconstructed structure must be eliminated by hydrogen etching in order to form an atomically smooth Si(110) surface.
基金Supported by the National Basic Research Program of China under Grant Nos 2011CB301900,2012CB619200 and 2012CB619304the High-Technology Research and Development Program of China under Grant Nos 2014AA032605 and 2015AA033305+4 种基金the National Natural Science Foundation of China under Grant Nos 60990311,61274003,61422401,51461135002,60936004,61176063 and 61334009the Natural Science Foundation of Jiangsu Province under Grant Nos BK2011010 and BK20141320the Scientific Innovation Research of College Graduate in Jiangsu Province under Grant No CXLX12.0049a Project Funded by the Priority Academic Program Development of Jiangsu Higher Education Institutionsthe Solid State Lighting and Energy-saving Electronics Collaborative Innovation Center
文摘The effect of high-temperature annealing on the yellow and blue luminescence of the undoped GaN is investi- gated by photoluminescenee （PL） and x-ray photoelectron spectroscopy （XPS）. It is found that the band-edge emission in the GaN apparently increases, and the yellow luminescence （YL） and blue luminescence （BL） bands dramatically decrease after annealing at 700℃. At the annealing temperature higher than 900℃, the YL and BL intensities show an enhancement for the nitrogen annealed GaN. This fact should be attributed to the increment of the Ga and N vacancies in the GaN decomposition. However, the integrated PL intensity of the oxygen an- nealed GaN decreases at the temperature ranging from 900℃ to 1000℃. This results from the capture of many photo-generated holes by high-density surface states. XPS characterization confirms that the high-density surface states mainly originate from the incorporation of oxygen atoms into GaN at the high annealing temperature, and even induces the 0.34eV increment of the upward band bending for the oxygen annealed GaN at 1000℃.
基金the Natural Science Foundation of China for its financial support under the granted No.59931010
文摘Zr-Si-N films were deposited by RF magnetron sputtering (MS) technique. A Cu film on the top of Zr-Si-N films was prepared by DC pulsed magnetron sputtering. The Cu/Zr-Si-N systems were annealed in vacuum and N2/H2 gas mixture at 800°C, respectively. The structure of the films were characterized by X-ray diffraction (XRD), Auger electron spectroscopy (AES) and four-point probe method. The sheet resistances of the Cu/Zr-Si-N/Si contact systems annealed in N2/H2 gas mixture were lower than those of the specimens annealed in vacuum at 800°C. The residual oxygen contamination from vacuum annealing ambience influences the sheet resistances of the Cu/Zr-Si-N/Si contact systems due to residual oxygen contamination and/or voids in Cu films. Though thermal stabilities of the Cu/Zr-Si-N/Si systems were maintained up to 800°C when annealed in vacuum and N2/H2 gas mixture, the changes of thermal stability of specimens were noticeable. The vacuum can accelerate the oxidation and decomposition of Zr-Si-N barrier. On the contrary, N2/H2 gas mixture prevent from the Zr-Si-N barrier oxidation and decomposition.
基金supported by the Joint Foundation of Hubei Province(No.2024AFD113)Hubei Provincial Department of Education Science and Technology Plan Project(No.D20231804)+3 种基金Natural Science Fund Project of Hubei Province(No.2024AFD099)Hubei Province Technological Innovation Special Major Project(No.2023BEB015)Doctoral Scientific Research Foundation of Hubei University of Automotive Technology(No.BK202336)Hubei University of Automotive Technology 2024 Annual Unveiling the List and Taking Command(ULTC)Projects.
文摘This study developed a five-layer Mg alloy laminate(pure Mg/AZ31/AZ91/AZ31/pure Mg)through an innovative synergistic strategy involving Al-element gradient design,extrusion,and short-term annealing.Microstructural characterization revealed hierarchical heterogeneities in grain size,texture intensity,dislocation density,and precipitated phases,accompanied by the formation of annealing twinning in pure Mg layer—a phenomenon rarely documented in Mg alloys.Mechanical tests demonstrated significant strengthening effects in all annealed samples,particularly in the 300℃/30 min annealed sample,which achieved the optimal comprehensive mechanical properties.The enhanced strength originated from the synergistic interaction among element-diffusion-induced solid solution strengthening,nanoscale β-Mg_(17)Al_(12) precipitation,and hetero-deformation-induced(HDI)strengthening.This approach breaks the strength-ductility trade-off induced by traditional annealing processes,offering a new paradigm for designing high-performance Mg alloy laminates.
文摘Improving solar cell performance by increasing solar cell efficiency by various process optimization had always been a simple straight-forward methodology followed in a R&D or in a solar cell manufacturing company. This is also the most cost-effective practice to improve a product performance using the same technology without the need to procure alternative or expensive raw materials or by adopting advanced solar cell processing techniques. Aluminium Back Surface Field (Al-BSF) technology using multi-crystalline wafers (mc-Si) had been a well-established and a dominant product in the solar industry for more than two decades. However, as the industry progresses, the demand for high efficiency solar cells and modules started going up and full area Aluminium BSF based cells suffers from a lot of inherent limitations on cell efficiency. This is primarily due to the intrinsic high density of crystal lattice defects or otherwise called as grain boundary defects present dominantly only in mc-Si wafers. These grain boundaries tends to accumulate several defects and become trap centres which cause high recombination for minority carriers thereby exhibiting lower conversion efficiency and higher dispersion in electrical parameters in batches of tested cells. Years of research using this material have helped to derive the maximum benefits using this mc-Si wafer in producing industrial full area BSF cells and we can say with certainty that the efficiency potential has reached the saturation point with this technology. An interesting development that happened in the area of improving the final product performance using mc-Si wafers at both cell and module level, is by replacing the conventional acid texturing process with an introduction of a nano-texturing process called Metal Catalysed Chemical Etching (MCCE) using specialized chemicals which improves the light trapping capabilities by creation of inverted pyramid texture on the silicon wafer surface and thereby enabling the wafers to absorb sunlight over a broader range of wavelength and incident angle. With this development done in mc-Si wafers in recent past, it is still a daunting task to surpass cell efficiencies beyond 19.0% using this wafer source. Hence for cell manufacturing lines which use mc-Si wafers, there is always a constant need to improve the cell manufacturing processes to reduce the impact of poor intrinsic quality of mc-Si wafers and improve the final product performance without adding any significant cost factor.
基金Project (2010DFA51650) supported by the Ministry of Science and Technology of China
文摘Multilayered Ti-Al based intermetallic sheets were fabricated by sintering alternately layered titanium and aluminum foils.The microstructure and phase formation of the obtained sheets under different sintering conditions were evaluated by various techniques.The results reveal that when the sintering temperature is above the melting point of aluminum,the self-propagating high-temperature synthesis reaction occurs between Ti and Al,and forms various phases of Ti-based solid solutions including α-Ti Ti3Al,TiAl,TiAl2 and α-Ti including TiAl3,etc.When the sintering time increased,Ti-based solid solution,TiAl2 and TiAl3 disappeared gradually,and the sheet containing Ti3Al and TiAl phases in a multilayered structure formed finally.A lot of voids were also observed in the sintered structures,which were caused by the melting Al,Kirkendall effect and the difference of molar volumes between reactants and products.The voids were eliminated and a dense sample was obtained by the following hot press.
基金Project(BK20160869)supported by the Natural Science Foundation of Jiangsu Province,ChinaProject(GY12015009)supported by the Nantong Science and Technology Program,China+1 种基金Project(2015B01314)supported by the Fundamental Research Funds for the Central Universities,ChinaProject(51501039)supported by the National Natural Science Foundation of China
文摘The microstructural evolution of a 18R single phase （S 18） alloy during annealing at 773 K for 100 h was investigated in order to reveal the formation mechanism of 14H phase. The results showed that the as-cast S 18 alloy was composed of 18R phase （its volume fraction exceeds 93%）, W particles and α-Mg phase. The 18R phase in S18 alloy was thermally stable and was not transformed into 14H long period stacking ordered （LPSO） phase during annealing. However, 14H lamellas formed within tiny α-Mg slices, and their average size and volume fraction increased with prolonging annealing time. Moreover, the 14H phase is nucleated within α-Mg independently on the basis of basal stacking faults （SFs）. The broadening growth of 14H lamellas is an interface-controlled process which involves ledges on basal planes, while the lengthening growth is a diffusion-controlled process and is associated with diffusion of solute atoms. The formation mechanism of 14H phase in this alloy could be explained as α-Mg＇→α-Mg＋14H.
基金Projects(51375070,51574058)supported by the National Natural Science Foundation of China
文摘Homogenization annealing of the 7050/6009 bimetal slab prepared by direct-chill casting was investigated and its effects on microstructural evolution, composition distribution and mechanical properties in the interfacial region of the bimetal were studied. The results show that the optimized homogenization annealing process was 460℃for 24 h. After homogenization annealing, the Zn-rich phases and Al15（FeMn）3Si2phases were precipitated at the interface of the bimetal. The diffusion layer thickness of homogenized bimetal increased by 30 μm from 440 to480℃for 24 h, while it increased by 280 μm from 12 to 36 h at 460℃. The Vickers hardnessesat 6009 alloy side and interface of the bimetal decreased after homogenized annealing and grain coarsening was considered asthedominating softening mechanism.The hardness variation at 7050 alloy side was complicated due to the combined action of solution strengthening, dispersion strengthening and dissolution of reinforced phases.
基金Project(U1360104)supported by the National Natural Science Foundation and Bao Steel of ChinaProject(A type,12QH1401200)supported by the Shanghai Rising-Star Program,China
文摘The effectsof annealing process on the hardness, microstructure, Si diffusion, and the sagging resistance of cold-rolled 4343/3003/4343 Al alloy clad sheets and their 3003 Al alloy core sheets were experimentally investigated through hardness tests, EBSD observations, EDS analysis, and sagging test.The results showedthat with the increase of annealing temperature, the hardness of both clad sheet and core sheet decreased, while thesaggingresistancesof both clad and core sheets achieved maximum values after annealing at 380℃ for 1h. After annealing at 380℃, the clad layer contained fine and equiaxedrecrystallized grains; the core layer was composed of fully recrystallized coarse grains elongated along the rolling direction. The Si diffusion from the clad layer to the core zone was limited. After annealing at a higher temperature of 440℃ or 550℃, thesaggingresistance of clad sheets worsened precipitously. The grains in the clad layer grew up, obscuring the interface between the clad and core layer; the recrystallized grains in the core layer became finer. Significant amount of Si penetrated into the core layer through the accelerated diffusion. Compared with the microstructure refinement, Si diffusion is the main factor influencing thesaggingresistance.
