A 4H-SiC superjunction(SJ)MOSFET(SJMOS)with integrated high-K gate dielectric and split gate(HKSG-SJMOS)is proposed in this paper.The key features of HKSG-SJMOS involve the utilization of high-K(HK)dielectric as the g...A 4H-SiC superjunction(SJ)MOSFET(SJMOS)with integrated high-K gate dielectric and split gate(HKSG-SJMOS)is proposed in this paper.The key features of HKSG-SJMOS involve the utilization of high-K(HK)dielectric as the gate dielectric,which surrounds the source-connected split gate(SG)and metal gate.The high-K gate dielectric optimizes the electric field distribution within the drift region,creating a low-resistance conductive channel.This enhancement leads to an increase in the breakdown voltage(BV)and a reduction in the specific on resistance(R_(on,sp)).The introduction of split gate surrounded by high-K dielectric reduces the gate-drain capacitance(C_(gd))and gate-drain charge(Q_(gd)),which improves the switching characteristics.The simulation results indicate that compared to conventional 4H-SiC SJMOS,the HKSG-SJMOS exhibits a 110.5%enhancement in figure of merit(FOM,FOM=BV^(2)/R_(on,sp)),a 93.6%reduction in the high frequency figure of merit(HFFOM)of R_(on,sp)·C_(gd),and reductions in turn-on loss(E_(on))and turn-off loss(E_(off))by 38.3%and 31.6%,respectively.Furthermore,the reverse recovery characteristics of HKSG-SJMOS has also discussed,revealing superior performance compared to conventional 4H-SiC SJMOS.展开更多
A junctionless transistor is emerging as a most promising device for the future technology in the decananometer regime. To explore and exploit the behavior completely, the understanding of gate tunneling current is of...A junctionless transistor is emerging as a most promising device for the future technology in the decananometer regime. To explore and exploit the behavior completely, the understanding of gate tunneling current is of great importance. In this paper we have explored the gate tunneling current of a double gate junctionless transistor（DGJLT） for the first time through an analytical model, to meet the future requirement of expected high-k gate dielectric material that could replace SiO2. We therefore present the high-k gate stacked architecture of the DGJLT to minimize the gate tunneling current. This paper also demonstrates the impact of conduction band offset,workfunction difference and k-values on the tunneling current of the DGJLT.展开更多
A semi-empirical analytic model for the threshold voltage instability of a MOSFET is derived from Shockley-Read-Hall （SRH） statistics to account for the transient charging effects in a MOSFET high-k gate stack. Star...A semi-empirical analytic model for the threshold voltage instability of a MOSFET is derived from Shockley-Read-Hall （SRH） statistics to account for the transient charging effects in a MOSFET high-k gate stack. Starting from the single energy level and single trap assumption, an analytical expression for the filled trap density in terms of dynamic time is derived from SRH statistics. The semi-empirical analytic model for the threshold voltage instability is developed based on MOSFET device physics between the threshold voltage and the induced trap density. The obtained model is also verified by extensive experimental data of trapping and de-trapping stress from different high-k gate configurations.展开更多
The decreasing feature sizes in complementary metal-oxide semiconductor （CMOS） transistor technology will require the replacement of SiO2 with gate dielectrics that have a high dielectric constant （high-k） because...The decreasing feature sizes in complementary metal-oxide semiconductor （CMOS） transistor technology will require the replacement of SiO2 with gate dielectrics that have a high dielectric constant （high-k） because as the SiO2 gate thickness is reduced below 1.4 nm, electron tunnelling effects and high leakage currents occur in SiO2, which present serious obstacles to future device reliability. In recent years significant progress has been made on the screening and selection of high-k gate dielectrics, understanding their physical properties, and their integration into CMOS technology. Now the family of hafnium oxide-based materials has emerged as the leading candidate for high-k gate dielectrics due to their excellent physical properties. It is also realized that the high-k oxides must be implemented in conjunction with metal gate electrodes to get sufficient potential for CMOS continue scaling. In the advanced nanoscale Si-based CMOS devices, the composition and thickness of interfacial layers in the gate stacks determine the critical performance of devices. Therefore, detailed atomic- scale understandings of the microstructures and interfacial structures built in the advanced CMOS gate stacks, are highly required. In this paper, several high-resolution electron, ion, and photon-based techniques currently used to characterize the high-k gate dielectrics and interfaces at atomic-scale, are reviewed. Particularly, we critically review the research progress on the characterization of interface behavior and structural evolution in the high-k gate dielectrics by high-resolution transmission electron microscopy （HRTEM） and the related techniques based on scanning transmission electron microscopy （STEM）, including high-angle annular dark- field （HAADF） imaging （also known as Z-contrast imaging）, electron energy-loss spectroscopy （EELS）, and energy dispersive X-ray spectroscopy （EDS）, due to that HRTEM and STEM have become essential metrology tools for characterizing the dielectric gate stacks in the present and future generations of CMOS devices. In Section 1 of this review, the working principles of each technique are briefly introduced and their key features are outlined. In Section 2, microstructural characterizations of high-k gate dielectrics at atomic-scale by electron microscopy are critically reviewed by citing some recent results reported on high-k gate dielectrics. In Section 3, metal gate electrodes and the interfacial structures between high-k dielectrics and metal gates are discussed. The electron beam damage effects in high-k gate stacks are also evaluated, and their origins and prevention are described in Section 4. Finally, we end this review with personal perspectives towards the future challenges of atomic-scale material characterization in advanced CMOS gate stacks.展开更多
Combining two-dimensional materials and high-k gate dielectrics offers a promising way to enhance the device performance of tunneling field-effect transistor(TFET).In this work,the device performance of WSe_(2)/SnSe_(...Combining two-dimensional materials and high-k gate dielectrics offers a promising way to enhance the device performance of tunneling field-effect transistor(TFET).In this work,the device performance of WSe_(2)/SnSe_(2)TFET with various gate dielectric materials is investigated based on quantum transport sim-ulation.Results show that TFETs with high-k gate dielectric materials exhibit improved on-offratio and enhanced transconductance.The optimized WSe_(2)/SnSe_(2)TFET with TiO_(2)gate dielectrics achieves an on-state current of 1560μA/μm and a subthreshold swing(SS)of 48 mV/dec.The utilization of high-k gate dielectric materials results in shorter tunneling length,higher transmission efficiency,and increased elec-tron tunneling probability.The performance of the WSe_(2)/SnSe_(2)TFET would be affected by the presence of the underlap region.Moreover,WSe_(2)/SnSe_(2)TFETs with La_(2)O_(3)dielectric can be scaled down to 3 nm while meeting high-performance(HP)device requirements according to the International Technology Roadmap for Semiconductors(ITRS).This research presents a practical solution for designing advanced logic devices in the sub-5 nm technology node.展开更多
An analytical direct tunneling gate current model for cylindrical surrounding gate（CSG） MOSFETs with high-k gate stacks is developed. It is found that the direct tunneling gate current is a strong function of the g...An analytical direct tunneling gate current model for cylindrical surrounding gate（CSG） MOSFETs with high-k gate stacks is developed. It is found that the direct tunneling gate current is a strong function of the gate＇s oxide thickness, but that it is less affected by the change in channel radius. It is also revealed that when the thickness of the equivalent oxide is constant, the thinner the first layer, the smaller the direct tunneling gate current.Moreover, it can be seen that the dielectric with a higher dielectric constant shows a lower tunneling current than expected. The accuracy of the analytical model is verified by the good agreement of its results with those obtained by the three-dimensional numerical device simulator ISE.展开更多
A theoretical model of flatband voltage （VFB） of metal/high-k/Si02/Si stack is proposed based on band alignment of entire gate stack, i.e., the VFB is obtained by simultaneously considering band alignments of metal/...A theoretical model of flatband voltage （VFB） of metal/high-k/Si02/Si stack is proposed based on band alignment of entire gate stack, i.e., the VFB is obtained by simultaneously considering band alignments of metal/high-k, high-k/SiO2 and SiO2/Si interfaces, and their interactions. Then the VFB of TiN/HfO2/SiO2/Si stack is experimentally obtained and theoretically investigated by this model. The theoretical calculations are in good agreement with the experimental results. Furthermore, both positive VFB shift of TiN/HfO2/SiO2/Si stack and Fermi level pinning are successfully interpreted and attributed to the dielectric contact induced gap states at TiN/HfO2 and HfO2/SiO2 interfaces.展开更多
In metal-gate/high-k stacks adopted by the 45 nm technology node, the fiat-band voltage （Vfb） shift remains one of the most critical challenges, particularly the flat-band voltage roll-off （Vfb roll-off） phenomeno...In metal-gate/high-k stacks adopted by the 45 nm technology node, the fiat-band voltage （Vfb） shift remains one of the most critical challenges, particularly the flat-band voltage roll-off （Vfb roll-off） phenomenon in p-channel metal- oxide-semiconductor （pMOS） devices with an ultrathin oxide layer. In this paper, recent progress on the investigation of the Vfb shift and the origin of the Vfb roll-off in the metal-gate/high-k pMOS stacks are reviewed. Methods that can alleviate the Vfb shift phenomenon are summarized and the future research trend is described.展开更多
A new 2-Π lumped element equivalent circuit model for high-k stacked on-chip transformers is proposed. The model parameters are extracted with high precision, mainly based on analytical methods. The developed model e...A new 2-Π lumped element equivalent circuit model for high-k stacked on-chip transformers is proposed. The model parameters are extracted with high precision, mainly based on analytical methods. The developed model enables fast and accurate time domain transient analysis and noise analysis in RFIC simulation since all elements in the model are fre- quency independent. The validity of the proposed model has been demonstrated by a fabricated monolithic stacked trans- former in TSMC＇s 0.13μm mixed-signal （MS）/RF CMOS＇ process.展开更多
By complementing the equivalent oxide thickness （EOT） of a 1.7nm nitride/oxynitride （N/O） stack gate dielectric （EOT- 1.7nm） with a W/TiN metal gate electrode,metal gate CMOS devices with sub-100nm gate length a...By complementing the equivalent oxide thickness （EOT） of a 1.7nm nitride/oxynitride （N/O） stack gate dielectric （EOT- 1.7nm） with a W/TiN metal gate electrode,metal gate CMOS devices with sub-100nm gate length are fabricated in China for the first time. The key technologies adopted to restrain SCE and to improve drive ability include a 1.7nm N/O stack gate dielectric, non-CMP planarization technology, a T-type refractory W/TiN metal stack gate electrode, and a novel super steep retrograde channel doping using heavy ion implantation and a double sidewall scheme. Using these optimized key technologies, high performance 95nm metal gate CMOS devices with excellent SCE and good driving ability are fabricated. Under power supply voltages of VDS ± 1.5V and VGS± 1.8V,drive currents of 679μA/μm for nMOS and - 327μA/μm for pMOS are obtained. A subthreshold slope of 84.46mV/dec, DIBL of 34.76mV/V, and Vth of 0.26V for nMOS, and a subthreshold slope of 107.4mV/dec,DIBL of 54.46mV/V, and Vth of 0.27V for pMOS are achieved. These results show that the combined technology has indeed thoroughly eliminated the boron penetration phenomenon and polysilicon depletion effect ,effectively reduced gate tunneling leakage, and improved device reliability.展开更多
A novel trench MOS barrier Schottky diode（TMBS） device with a high-k material introduced into the gate insulator is reported, which is named high-k TMBS. By simulation with Medici, it is found that the high-k TMBS c...A novel trench MOS barrier Schottky diode（TMBS） device with a high-k material introduced into the gate insulator is reported, which is named high-k TMBS. By simulation with Medici, it is found that the high-k TMBS can have 19.8% lower leakage current while maintaining the same breakdown voltage and forward turn-on voltage compared with the conventional regular trench TMBS.展开更多
Based on the exact resultant solution of two-dimensional Poisson＇s equation, the novel two-dimensional models, which include surface potential, threshold voltage, subthreshold current and subthreshold swing, have bee...Based on the exact resultant solution of two-dimensional Poisson＇s equation, the novel two-dimensional models, which include surface potential, threshold voltage, subthreshold current and subthreshold swing, have been developed for gate stack symmetrical double-gate strained-Si MOSFETs. The models are verified by numerical simulation. Besides offering the physical insight into device physics, the model provides the basic designing guidance of further immunity of short channel effect of complementary metal-oxide-semiconductor （CMOS）-based device in a nanoscale regime.展开更多
High-k gate dielectric Hf Ti ON Ga As metal-oxide–semiconductor（MOS） capacitors with La ON as interfacial passivation layer（IPL） and NH3- or N2-plasma surface pretreatment are fabricated, and their interfacial an...High-k gate dielectric Hf Ti ON Ga As metal-oxide–semiconductor（MOS） capacitors with La ON as interfacial passivation layer（IPL） and NH3- or N2-plasma surface pretreatment are fabricated, and their interfacial and electrical properties are investigated and compared with their counterparts that have neither La ON IPL nor surface treatment. It is found that good interface quality and excellent electrical properties can be achieved for a NH3-plasma pretreated Ga As MOS device with a stacked gate dielectric of Hf Ti ON/La ON. These improvements should be ascribed to the fact that the NH3-plasma can provide H atoms and NH radicals that can effectively remove defective Ga/As oxides. In addition, La ON IPL can further block oxygen atoms from being in-diffused, and Ga and As atoms from being out-diffused from the substrate to the high-k dielectric. This greatly suppresses the formation of Ga/As native oxides and gives rise to an excellent high-k/Ga As interface.展开更多
With the continued downscaling of complementary metal-oxide-semiconductor field effect transistor dimensions, high-dielectric constant （high-k） gate materials, as alternatives to SiO2, have been extensively investig...With the continued downscaling of complementary metal-oxide-semiconductor field effect transistor dimensions, high-dielectric constant （high-k） gate materials, as alternatives to SiO2, have been extensively investigated. Hf （Zr）-based high-k gate dielectric thin films have been regarded as the most promising candidates for high-k gate dielectric according to the International Technology Roadmap for Semiconductor due to their excellent physical properties and performance. This paper reviews the recent progress on Hf （Zr）-based high-k gate dielectrics based on PVD （physical vapor deposition） process. This article begins with a survey of various methods developed for generating Hf （Zr）-based high-k gate dielectrics, and then mainly focuses on microstructure, synthesis, characterization, formation mechanisms of interfacial layer, and optical properties of Hf （Zr）-based high-k gate dielectrics. Finally, this review concludes with personal perspectives towards future research on Hf （Zr）-based high-k gate dielectrics.展开更多
The fringing-induced barrier lowering（FIBL） effect of sub-100 nm MOSFETs with high-k gate dielectrics is investigated using a two-dimensional device simulator.An equivalent capacitance theory is proposed to explain ...The fringing-induced barrier lowering（FIBL） effect of sub-100 nm MOSFETs with high-k gate dielectrics is investigated using a two-dimensional device simulator.An equivalent capacitance theory is proposed to explain the physics mechanism of the FIBL effect.The FIBL effect is enhanced and the short channel performance is degraded with increasing capacitance.Based on equivalent capacitance theory,the influences of channel length,junction depth,gate/lightly doped drain（LDD） overlap length,spacer material and spacer width on FIBL is thoroughly investigated.A stack gate dielectric is presented to suppress the FIBL effect.展开更多
The key technologies for the dual high-k and dual metal gate, such as the electrical optimization of metal insert poly-Si stack structure, the separating of high-k and metal gate of n/pMOS in different regions of the ...The key technologies for the dual high-k and dual metal gate, such as the electrical optimization of metal insert poly-Si stack structure, the separating of high-k and metal gate of n/pMOS in different regions of the wafer, and the synchronous etching of n/pMOS gate stack, are successfully developed. First, reasonable flat-band voltage and equivalent oxide thickness of pMOS MIPS structure are obtained by further optimizing the HfSiAlON dielectric through incorporating more Al-O dipole at interface between HfSiAlON and bottom SiOx. Then, the separating of high-k and metal gate for n/pMOS is achieved by SC1（NH4OH：H2O2：H2O = 1 ： 1 ： 5） and DHF-based solution for the selective removing of n MOS TaN and Hf Si ON and by BCl3-based plasma and DHF-based solution for the selective removing of pMOS TaN/Mo and HfSiAlON.After that, the synchronous etching of n/pMOS gate stack is developed by utilizing optimized BCl3/SF6/O2/Ar plasma to obtain a vertical profile for TaN and TaN/Mo and by utilizing BCl3/Ar plasma combined with DHF-based solution to achieve high selectivity to Si substrate. Finally, good electrical characteristics of CMOS devices, obtained by utilizing these new developed technologies, further confirm that they are practicable technologies for DHDMG integration.展开更多
In the present work, a two-dimensional（2D） analytical framework of triple material symmetrical gate stack（TMGS）DG-MOSFET is presented in order to subdue the short channel effects. A lightly doped channel along wit...In the present work, a two-dimensional（2D） analytical framework of triple material symmetrical gate stack（TMGS）DG-MOSFET is presented in order to subdue the short channel effects. A lightly doped channel along with triple material gate having different work functions and symmetrical gate stack structure, showcases substantial betterment in quashing short channel effects to a good extent. The device functioning amends in terms of improved exemption to threshold voltage roll-off, thereby suppressing the short channel effects. The encroachments of respective device arguments on the threshold voltage of the proposed structure are examined in detail. The significant outcomes are compared with the numerical simulation data obtained by using 2D ATLAS;device simulator to affirm and formalize the proposed device structure.展开更多
The thickness effect of the TiN capping layer on the time dependent dielectric breakdown（TDDB） characteristic of ultra-thin EOT high-k metal gate NMOSFET is investigated in this paper.Based on experimental results,i...The thickness effect of the TiN capping layer on the time dependent dielectric breakdown（TDDB） characteristic of ultra-thin EOT high-k metal gate NMOSFET is investigated in this paper.Based on experimental results,it is found that the device with a thicker TiN layer has a more promising reliability characteristic than that with a thinner TiN layer.From the charge pumping measurement and secondary ion mass spectroscopy（SIMS） analysis,it is indicated that the sample with the thicker TiN layer introduces more Cl passivation at the IL/Si interface and exhibits a lower interface trap density.In addition,the influences of interface and bulk trap density ratio Nit/Not are studied by TDDB simulations through combining percolation theory and the kinetic Monte Carlo（kMC） method.The lifetime reduction and Weibull slope lowering are explained by interface trap effects for TiN capping layers with different thicknesses.展开更多
High-k metal gate stacks are being used to suppress the gate leakage due to tunneling for sub-45 nm technology nodes.The reliability of thin dielectric films becomes a limitation to device manufacturing,especially to ...High-k metal gate stacks are being used to suppress the gate leakage due to tunneling for sub-45 nm technology nodes.The reliability of thin dielectric films becomes a limitation to device manufacturing,especially to the breakdown characteristic.In this work,a breakdown simulator based on a percolation model and the kinetic Monte Carlo method is set up,and the intrinsic relation between time to breakdown and trap generation rate R is studied by TDDB simulation.It is found that all degradation factors,such as trap generation rate time exponent m,Weibull slope β and percolation factor s,each could be expressed as a function of trap density time exponent α.Based on the percolation relation and power law lifetime projection,a temperature related trap generation model is proposed.The validity of this model is confirmed by comparing with experiment results.For other device and material conditions,the percolation relation provides a new way to study the relationship between trap generation and lifetime projection.展开更多
基金supported by the National Natural Science Foundation of China(Grant Nos.62074080 and U23B2042)in part by the Natural Science Foundation of Jiangsu Province(Grant No.BK20211104)in part by the Jiangsu Provincial Key Research and Development Program(Grant No.BE2022126)。
文摘A 4H-SiC superjunction(SJ)MOSFET(SJMOS)with integrated high-K gate dielectric and split gate(HKSG-SJMOS)is proposed in this paper.The key features of HKSG-SJMOS involve the utilization of high-K(HK)dielectric as the gate dielectric,which surrounds the source-connected split gate(SG)and metal gate.The high-K gate dielectric optimizes the electric field distribution within the drift region,creating a low-resistance conductive channel.This enhancement leads to an increase in the breakdown voltage(BV)and a reduction in the specific on resistance(R_(on,sp)).The introduction of split gate surrounded by high-K dielectric reduces the gate-drain capacitance(C_(gd))and gate-drain charge(Q_(gd)),which improves the switching characteristics.The simulation results indicate that compared to conventional 4H-SiC SJMOS,the HKSG-SJMOS exhibits a 110.5%enhancement in figure of merit(FOM,FOM=BV^(2)/R_(on,sp)),a 93.6%reduction in the high frequency figure of merit(HFFOM)of R_(on,sp)·C_(gd),and reductions in turn-on loss(E_(on))and turn-off loss(E_(off))by 38.3%and 31.6%,respectively.Furthermore,the reverse recovery characteristics of HKSG-SJMOS has also discussed,revealing superior performance compared to conventional 4H-SiC SJMOS.
文摘A junctionless transistor is emerging as a most promising device for the future technology in the decananometer regime. To explore and exploit the behavior completely, the understanding of gate tunneling current is of great importance. In this paper we have explored the gate tunneling current of a double gate junctionless transistor（DGJLT） for the first time through an analytical model, to meet the future requirement of expected high-k gate dielectric material that could replace SiO2. We therefore present the high-k gate stacked architecture of the DGJLT to minimize the gate tunneling current. This paper also demonstrates the impact of conduction band offset,workfunction difference and k-values on the tunneling current of the DGJLT.
基金supported by the Special Funds for the State Key Development Program for Basic Research of Chinathe National Natural Science Foundation of China (No.60876027)
文摘A semi-empirical analytic model for the threshold voltage instability of a MOSFET is derived from Shockley-Read-Hall （SRH） statistics to account for the transient charging effects in a MOSFET high-k gate stack. Starting from the single energy level and single trap assumption, an analytical expression for the filled trap density in terms of dynamic time is derived from SRH statistics. The semi-empirical analytic model for the threshold voltage instability is developed based on MOSFET device physics between the threshold voltage and the induced trap density. The obtained model is also verified by extensive experimental data of trapping and de-trapping stress from different high-k gate configurations.
基金support from Natural Science Foundation of Jiangsu Province (ProjectNo. BK2007130)National Natural Science Foundation of China (Grant Nos. 10874065, 60576023 and 60636010)+3 种基金Ministry of Science and Technology of China (Grant No.2009CB929503)Ministry of Science and Technology of China (Grant Nos. 2009CB929503 and2009ZX02101-4)the project sponsored by the Scientific Research Foundation for the Returned Overseas Chinese Scholars, State Education MinistryNational Found for Fostering Talents of Basic Science (NFFTBS) (ProjectNo. J0630316)
文摘The decreasing feature sizes in complementary metal-oxide semiconductor （CMOS） transistor technology will require the replacement of SiO2 with gate dielectrics that have a high dielectric constant （high-k） because as the SiO2 gate thickness is reduced below 1.4 nm, electron tunnelling effects and high leakage currents occur in SiO2, which present serious obstacles to future device reliability. In recent years significant progress has been made on the screening and selection of high-k gate dielectrics, understanding their physical properties, and their integration into CMOS technology. Now the family of hafnium oxide-based materials has emerged as the leading candidate for high-k gate dielectrics due to their excellent physical properties. It is also realized that the high-k oxides must be implemented in conjunction with metal gate electrodes to get sufficient potential for CMOS continue scaling. In the advanced nanoscale Si-based CMOS devices, the composition and thickness of interfacial layers in the gate stacks determine the critical performance of devices. Therefore, detailed atomic- scale understandings of the microstructures and interfacial structures built in the advanced CMOS gate stacks, are highly required. In this paper, several high-resolution electron, ion, and photon-based techniques currently used to characterize the high-k gate dielectrics and interfaces at atomic-scale, are reviewed. Particularly, we critically review the research progress on the characterization of interface behavior and structural evolution in the high-k gate dielectrics by high-resolution transmission electron microscopy （HRTEM） and the related techniques based on scanning transmission electron microscopy （STEM）, including high-angle annular dark- field （HAADF） imaging （also known as Z-contrast imaging）, electron energy-loss spectroscopy （EELS）, and energy dispersive X-ray spectroscopy （EDS）, due to that HRTEM and STEM have become essential metrology tools for characterizing the dielectric gate stacks in the present and future generations of CMOS devices. In Section 1 of this review, the working principles of each technique are briefly introduced and their key features are outlined. In Section 2, microstructural characterizations of high-k gate dielectrics at atomic-scale by electron microscopy are critically reviewed by citing some recent results reported on high-k gate dielectrics. In Section 3, metal gate electrodes and the interfacial structures between high-k dielectrics and metal gates are discussed. The electron beam damage effects in high-k gate stacks are also evaluated, and their origins and prevention are described in Section 4. Finally, we end this review with personal perspectives towards the future challenges of atomic-scale material characterization in advanced CMOS gate stacks.
基金supported by the National Natural Science Foun-dation of China(Grant Nos.62174122 and U2241244)the Fun-damental Research Funds for the Central Universities(Grant No.2042023kf0116)+1 种基金the Science and Technology Project of China Southern Power Grid Co.,Ltd.(Grant No.GXKJXM20220095)the Hubei Key Laboratory of Electronic Manufacturing and Pack-aging Integration of Wuhan University(Grant No.EMPI2023016)。
文摘Combining two-dimensional materials and high-k gate dielectrics offers a promising way to enhance the device performance of tunneling field-effect transistor(TFET).In this work,the device performance of WSe_(2)/SnSe_(2)TFET with various gate dielectric materials is investigated based on quantum transport sim-ulation.Results show that TFETs with high-k gate dielectric materials exhibit improved on-offratio and enhanced transconductance.The optimized WSe_(2)/SnSe_(2)TFET with TiO_(2)gate dielectrics achieves an on-state current of 1560μA/μm and a subthreshold swing(SS)of 48 mV/dec.The utilization of high-k gate dielectric materials results in shorter tunneling length,higher transmission efficiency,and increased elec-tron tunneling probability.The performance of the WSe_(2)/SnSe_(2)TFET would be affected by the presence of the underlap region.Moreover,WSe_(2)/SnSe_(2)TFETs with La_(2)O_(3)dielectric can be scaled down to 3 nm while meeting high-performance(HP)device requirements according to the International Technology Roadmap for Semiconductors(ITRS).This research presents a practical solution for designing advanced logic devices in the sub-5 nm technology node.
基金Project supported by the National Natural Science Foundation of China(Nos.61076101,61204092)the Fundamental Research Fundsfor the Central Universities of China(No.K50511250001)
文摘An analytical direct tunneling gate current model for cylindrical surrounding gate（CSG） MOSFETs with high-k gate stacks is developed. It is found that the direct tunneling gate current is a strong function of the gate＇s oxide thickness, but that it is less affected by the change in channel radius. It is also revealed that when the thickness of the equivalent oxide is constant, the thinner the first layer, the smaller the direct tunneling gate current.Moreover, it can be seen that the dielectric with a higher dielectric constant shows a lower tunneling current than expected. The accuracy of the analytical model is verified by the good agreement of its results with those obtained by the three-dimensional numerical device simulator ISE.
基金supported by the National Natural Science of China(Grant Nos.61176091 and 50932001)
文摘A theoretical model of flatband voltage （VFB） of metal/high-k/Si02/Si stack is proposed based on band alignment of entire gate stack, i.e., the VFB is obtained by simultaneously considering band alignments of metal/high-k, high-k/SiO2 and SiO2/Si interfaces, and their interactions. Then the VFB of TiN/HfO2/SiO2/Si stack is experimentally obtained and theoretically investigated by this model. The theoretical calculations are in good agreement with the experimental results. Furthermore, both positive VFB shift of TiN/HfO2/SiO2/Si stack and Fermi level pinning are successfully interpreted and attributed to the dielectric contact induced gap states at TiN/HfO2 and HfO2/SiO2 interfaces.
基金Project supported by the National Natural Science Foundation of China (Grants Nos.50802005 and 11074020)the Program for New Century Excellent Talents in University,China (Grant No.NCET-08-0029)+1 种基金the Ph.D.Program Foundation of Ministry of Education of China (Grant No.200800061055)the Hong Kong Research Grants Council General Research Funds,China (Grant No.CityU112608)
文摘In metal-gate/high-k stacks adopted by the 45 nm technology node, the fiat-band voltage （Vfb） shift remains one of the most critical challenges, particularly the flat-band voltage roll-off （Vfb roll-off） phenomenon in p-channel metal- oxide-semiconductor （pMOS） devices with an ultrathin oxide layer. In this paper, recent progress on the investigation of the Vfb shift and the origin of the Vfb roll-off in the metal-gate/high-k pMOS stacks are reviewed. Methods that can alleviate the Vfb shift phenomenon are summarized and the future research trend is described.
文摘A new 2-Π lumped element equivalent circuit model for high-k stacked on-chip transformers is proposed. The model parameters are extracted with high precision, mainly based on analytical methods. The developed model enables fast and accurate time domain transient analysis and noise analysis in RFIC simulation since all elements in the model are fre- quency independent. The validity of the proposed model has been demonstrated by a fabricated monolithic stacked trans- former in TSMC＇s 0.13μm mixed-signal （MS）/RF CMOS＇ process.
文摘By complementing the equivalent oxide thickness （EOT） of a 1.7nm nitride/oxynitride （N/O） stack gate dielectric （EOT- 1.7nm） with a W/TiN metal gate electrode,metal gate CMOS devices with sub-100nm gate length are fabricated in China for the first time. The key technologies adopted to restrain SCE and to improve drive ability include a 1.7nm N/O stack gate dielectric, non-CMP planarization technology, a T-type refractory W/TiN metal stack gate electrode, and a novel super steep retrograde channel doping using heavy ion implantation and a double sidewall scheme. Using these optimized key technologies, high performance 95nm metal gate CMOS devices with excellent SCE and good driving ability are fabricated. Under power supply voltages of VDS ± 1.5V and VGS± 1.8V,drive currents of 679μA/μm for nMOS and - 327μA/μm for pMOS are obtained. A subthreshold slope of 84.46mV/dec, DIBL of 34.76mV/V, and Vth of 0.26V for nMOS, and a subthreshold slope of 107.4mV/dec,DIBL of 54.46mV/V, and Vth of 0.27V for pMOS are achieved. These results show that the combined technology has indeed thoroughly eliminated the boron penetration phenomenon and polysilicon depletion effect ,effectively reduced gate tunneling leakage, and improved device reliability.
基金Project supported by the National Basic Research Program of China(Grant No.2011CBA00607)the National Natural Science Foundation of China(Grant Nos.61106089 and 61376097)the Zhejiang Provincial Natural Science Foundation of China(Grant No.LR14F040001)
文摘A novel trench MOS barrier Schottky diode（TMBS） device with a high-k material introduced into the gate insulator is reported, which is named high-k TMBS. By simulation with Medici, it is found that the high-k TMBS can have 19.8% lower leakage current while maintaining the same breakdown voltage and forward turn-on voltage compared with the conventional regular trench TMBS.
基金Project supported by the National Natural Science Foundation of China (Grant Nos. 60976068 and 60936005)Cultivation Fund of the Key Scientific and Technical Innovation Project, Ministry of Education of China (Grant No. 708083),Cultivation Fund of the Key Scientific and Technical Innovation Project, Ministry of Education of China (Grant No. 200807010010)
文摘Based on the exact resultant solution of two-dimensional Poisson＇s equation, the novel two-dimensional models, which include surface potential, threshold voltage, subthreshold current and subthreshold swing, have been developed for gate stack symmetrical double-gate strained-Si MOSFETs. The models are verified by numerical simulation. Besides offering the physical insight into device physics, the model provides the basic designing guidance of further immunity of short channel effect of complementary metal-oxide-semiconductor （CMOS）-based device in a nanoscale regime.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61176100 and 61274112)
文摘High-k gate dielectric Hf Ti ON Ga As metal-oxide–semiconductor（MOS） capacitors with La ON as interfacial passivation layer（IPL） and NH3- or N2-plasma surface pretreatment are fabricated, and their interfacial and electrical properties are investigated and compared with their counterparts that have neither La ON IPL nor surface treatment. It is found that good interface quality and excellent electrical properties can be achieved for a NH3-plasma pretreated Ga As MOS device with a stacked gate dielectric of Hf Ti ON/La ON. These improvements should be ascribed to the fact that the NH3-plasma can provide H atoms and NH radicals that can effectively remove defective Ga/As oxides. In addition, La ON IPL can further block oxygen atoms from being in-diffused, and Ga and As atoms from being out-diffused from the substrate to the high-k dielectric. This greatly suppresses the formation of Ga/As native oxides and gives rise to an excellent high-k/Ga As interface.
基金the support from the National Major Project of Fundamental Research:Nanomaterials and Nanostructures(Grant No.2005CB623603)the National Natural Science Foundation of China(Grant No.10674138)the Special Fund for President Scholarship,Chinese Academy of Sciences.
文摘With the continued downscaling of complementary metal-oxide-semiconductor field effect transistor dimensions, high-dielectric constant （high-k） gate materials, as alternatives to SiO2, have been extensively investigated. Hf （Zr）-based high-k gate dielectric thin films have been regarded as the most promising candidates for high-k gate dielectric according to the International Technology Roadmap for Semiconductor due to their excellent physical properties and performance. This paper reviews the recent progress on Hf （Zr）-based high-k gate dielectrics based on PVD （physical vapor deposition） process. This article begins with a survey of various methods developed for generating Hf （Zr）-based high-k gate dielectrics, and then mainly focuses on microstructure, synthesis, characterization, formation mechanisms of interfacial layer, and optical properties of Hf （Zr）-based high-k gate dielectrics. Finally, this review concludes with personal perspectives towards future research on Hf （Zr）-based high-k gate dielectrics.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.60936005 and 61076097)the Cultivation Fund of the Key Scientific and Technical Innovation Project of Ministry of Education of China(Grant No.708083)the Fundamental Research Funds for the Central Universities,China(Grant No.20110203110012)
文摘The fringing-induced barrier lowering（FIBL） effect of sub-100 nm MOSFETs with high-k gate dielectrics is investigated using a two-dimensional device simulator.An equivalent capacitance theory is proposed to explain the physics mechanism of the FIBL effect.The FIBL effect is enhanced and the short channel performance is degraded with increasing capacitance.Based on equivalent capacitance theory,the influences of channel length,junction depth,gate/lightly doped drain（LDD） overlap length,spacer material and spacer width on FIBL is thoroughly investigated.A stack gate dielectric is presented to suppress the FIBL effect.
基金Project supported by the National High Technology Research and Development Program of China(Grant No.2015AA010601)
文摘The key technologies for the dual high-k and dual metal gate, such as the electrical optimization of metal insert poly-Si stack structure, the separating of high-k and metal gate of n/pMOS in different regions of the wafer, and the synchronous etching of n/pMOS gate stack, are successfully developed. First, reasonable flat-band voltage and equivalent oxide thickness of pMOS MIPS structure are obtained by further optimizing the HfSiAlON dielectric through incorporating more Al-O dipole at interface between HfSiAlON and bottom SiOx. Then, the separating of high-k and metal gate for n/pMOS is achieved by SC1（NH4OH：H2O2：H2O = 1 ： 1 ： 5） and DHF-based solution for the selective removing of n MOS TaN and Hf Si ON and by BCl3-based plasma and DHF-based solution for the selective removing of pMOS TaN/Mo and HfSiAlON.After that, the synchronous etching of n/pMOS gate stack is developed by utilizing optimized BCl3/SF6/O2/Ar plasma to obtain a vertical profile for TaN and TaN/Mo and by utilizing BCl3/Ar plasma combined with DHF-based solution to achieve high selectivity to Si substrate. Finally, good electrical characteristics of CMOS devices, obtained by utilizing these new developed technologies, further confirm that they are practicable technologies for DHDMG integration.
文摘In the present work, a two-dimensional（2D） analytical framework of triple material symmetrical gate stack（TMGS）DG-MOSFET is presented in order to subdue the short channel effects. A lightly doped channel along with triple material gate having different work functions and symmetrical gate stack structure, showcases substantial betterment in quashing short channel effects to a good extent. The device functioning amends in terms of improved exemption to threshold voltage roll-off, thereby suppressing the short channel effects. The encroachments of respective device arguments on the threshold voltage of the proposed structure are examined in detail. The significant outcomes are compared with the numerical simulation data obtained by using 2D ATLAS;device simulator to affirm and formalize the proposed device structure.
基金supported by the National High Technology Research and Development Program of China(Grant No.SS2015AA010601)the National Natural Science Foundation of China(Grant Nos.61176091 and 61306129)the Opening Project of Key Laboratory of Microelectronics Devices&Integrated Technology,Institute of Micro Electronics of Chinese Academy of Sciences
文摘The thickness effect of the TiN capping layer on the time dependent dielectric breakdown（TDDB） characteristic of ultra-thin EOT high-k metal gate NMOSFET is investigated in this paper.Based on experimental results,it is found that the device with a thicker TiN layer has a more promising reliability characteristic than that with a thinner TiN layer.From the charge pumping measurement and secondary ion mass spectroscopy（SIMS） analysis,it is indicated that the sample with the thicker TiN layer introduces more Cl passivation at the IL/Si interface and exhibits a lower interface trap density.In addition,the influences of interface and bulk trap density ratio Nit/Not are studied by TDDB simulations through combining percolation theory and the kinetic Monte Carlo（kMC） method.The lifetime reduction and Weibull slope lowering are explained by interface trap effects for TiN capping layers with different thicknesses.
基金supported by the National High Technology Research and Development Program of China(Grant No.SS2015AA010601)the National Natural Science Foundation of China(Grant Nos.61176091 and 61306129)the Opening Project of Key Laboratory of Microelectronics Devices&Integrated Technology,Institute of Micro Electronics of Chinese Academy of Sciences
文摘High-k metal gate stacks are being used to suppress the gate leakage due to tunneling for sub-45 nm technology nodes.The reliability of thin dielectric films becomes a limitation to device manufacturing,especially to the breakdown characteristic.In this work,a breakdown simulator based on a percolation model and the kinetic Monte Carlo method is set up,and the intrinsic relation between time to breakdown and trap generation rate R is studied by TDDB simulation.It is found that all degradation factors,such as trap generation rate time exponent m,Weibull slope β and percolation factor s,each could be expressed as a function of trap density time exponent α.Based on the percolation relation and power law lifetime projection,a temperature related trap generation model is proposed.The validity of this model is confirmed by comparing with experiment results.For other device and material conditions,the percolation relation provides a new way to study the relationship between trap generation and lifetime projection.
