Cenozoic high\|K igneous rocks are widely distributed in eastern Tibet. These rocks are exposed as flows, dykes and small intrusions along a narrow north\|south trending zone, which follows Tertiary fold belts and the...Cenozoic high\|K igneous rocks are widely distributed in eastern Tibet. These rocks are exposed as flows, dykes and small intrusions along a narrow north\|south trending zone, which follows Tertiary fold belts and the Batang—Lijiang and Ailao Shan—Red River strike\|slip systems. Although several models were proposed to interpret their petrogenesis (Deng, 1989; Arnaud et al., 1991; Turner et al., 1996; Yin et al., 1995; Miller et al., 1999), their origin still remains hotly debated. Moreover, the published results were only focused on the high\|K igneous rocks resulted from partial melting of an enriched lithospheric mantle. Here, we present the detailed documents to testify the existence of a new kind of high\|K igneous rocks in eastern Tibet.Our new 39 Ar/ 40 Ar age data (Wang et al., 1999) and published age data for high\|K rocks in eastern Tibet show two distinctive magmatic episodes: one between 42Ma and 24Ma, and the other since ca.16Ma. They correspond to two types of high\|K magmatism in eastern Tibet. We name the older and younger groups as types Ⅰ and Ⅱ, respectively.展开更多
The major element, trace element and Nd-Sr isotopic composition of Cenozoic basaltic volcanic rocks from the Maguan area, eastern Tibet, indicates that the volcanic rocks are enriched in alkalis, especially K (K-2O up...The major element, trace element and Nd-Sr isotopic composition of Cenozoic basaltic volcanic rocks from the Maguan area, eastern Tibet, indicates that the volcanic rocks are enriched in alkalis, especially K (K-2O up to {3.81%}) and depleted in Ti (TiO-2={1.27%}-{2.00%}). These rocks may be classified as two groups, based on their Mg+# numbers: one may represent primary magma (Mg+# numbers from 68 to 69), and the other, the evolved magma (Mg+# numbers from 49 to 57). Their REE contents are very high (∑REE={155.06}-{239.04}μg/g). Their REE distribution patterns are of the right-inclined type, characterized by LREE enrichment [(La/Yb)-N={12.0}-{19.2}], no Ce anomaly (Ce/Ce+*={1.0}), and weak negative Eu anomaly (Eu/Eu+*={0.9}). The rocks are highly enriched in Rb, Sr and Ba ({59.5}-{93.8} μg/g, 732-999 μg/g, and 450-632 μg/g, respectively), high in U and Th ({1.59}-{2.31} μg/g and {4.73}-{8.16} μg/g, respectively), and high in Nb, Ta, Zr and Hf (70-118 μg/g, {3.72}-{5.93} μg/g, 215-381 μg/g, and {5.47}-{9.03} μg/g, respectively). In the primitive mantle-normalized incompatible element spidergram, Nb, Ta, Zr, Hf and P show positive anomalies, whereas Ba, Ti and Y show negative anomalies. The {{}+{87}Sr/+{86}Sr} ratios range from {0.704029} to {0.704761}; {{}+{143}Nd/+{144}Nd} from {0.512769} to {0.512949}; and εNd from {+2.6} to {+6.1}. These geochemical features might suggest that the potential source of the basaltic high-K volcanic rocks in the Maguan area is similar to the OIB-source mantle of Hawaii and Kergeulen volcanic rocks.展开更多
This paper presents a new silicon-on-insulator(SOI) lateral-double-diffused metal-oxide-semiconductor transistor(LDMOST) device with alternated high-k dielectric and step doped silicon pillars(HKSD device). Due to the...This paper presents a new silicon-on-insulator(SOI) lateral-double-diffused metal-oxide-semiconductor transistor(LDMOST) device with alternated high-k dielectric and step doped silicon pillars(HKSD device). Due to the modulation of step doping technology and high-k dielectric on the electric field and doped profile of each zone, the HKSD device shows a greater performance. The analytical models of the potential, electric field, optimal breakdown voltage, and optimal doped profile are derived. The analytical results and the simulated results are basically consistent, which confirms the proposed model suitable for the HKSD device. The potential and electric field modulation mechanism are investigated based on the simulation and analytical models. Furthermore, the influence of the parameters on the breakdown voltage(BV) and specific on-resistance(R_(on,sp)) are obtained. The results indicate that the HKSD device has a higher BV and lower R_(on,sp) compared to the SD device and HK device.展开更多
The Langdu high-K calc-alkaline intrusions are located in the Zhongdian area, which is the southern part of the Yidun island arc. These intrusive rocks consist mainly of monzonite porphyry, granodiorite, and diorite p...The Langdu high-K calc-alkaline intrusions are located in the Zhongdian area, which is the southern part of the Yidun island arc. These intrusive rocks consist mainly of monzonite porphyry, granodiorite, and diorite porphyry. The K20 content of majority of these rocks is greater than 3%, and, in the K20-SiO2 diagram, all the samples fall into the high-K calc-alkaline to shoshonitic fields. They are enriched in light rare earth elements （LREEs） and depleted in heavy rare earth elements （HREEs; LaN/YbN = 14.3-21.2）, and show slightly negative Eu anomalies （6Eu = 0.77-1.00）. These rocks have high K, Rb, Sr, and Ba contents; moderate to high enrichment of compatible elements （Cr = 36.7-79.9 ppm, Co = 9.6-16.4 ppm, and MgO = 2.2%-3.4%）; low Nb, Ta, and Ti contents, and characteristic of low high field strength elements（HFSEs） versus incompatible elements ratios （Nb/Th = 0.75, Nb/La = 0.34） and incompatible elements ratios （Nb/U = 3.0 and Ce/Pb = 5.1, Ba/Rb = 12.0）. These rocks exhibit restricted Sr and Nd isotopic compositions, with （87Sr/S6Sr）i values ranging from 0.7044 to 0.7069 and ENd（t） values from -2.8 to -2.2. The Sr-Nd isotope systematic and specific trace element ratios suggest that Langdu high-K calc-alkaline intrusive rocks derived from a metasomatized mantle source. The unique geochemical feature of intrusive rocks can be modeled successfully using different members of a slightly enriched mantle, a slab-derived fluid, and terrigenous sediments. It can be inferred that the degree of partial melting and the presence of specific components are temporally related to the tectonic evolution of the Zhongdian island arc. Formation of these rocks can be explained by the various degrees of melting within an ascending region of the slightly enriched mantle, triggered by the subduction of the Garz^--Litang ocean, and an interaction between the slab-derived fluid and the terrigenous sediments.展开更多
This paper deals with the high\|K, potassic dike rocks in two types of gold ore fields at Linglong and Dayigezhuang, Northwest Jiaodong. The rocks can be divided into three types, i.e., (1) lamprophyre, (2) andesite p...This paper deals with the high\|K, potassic dike rocks in two types of gold ore fields at Linglong and Dayigezhuang, Northwest Jiaodong. The rocks can be divided into three types, i.e., (1) lamprophyre, (2) andesite porphyrite, and (3) dacite porphyrite, based on their geological occurrence and space\|time relationship with gold mineralization. These rocks were the products of early, synchronous and late mineralization, respectively. Element geochemistry shows that variations in chemical composition of major oxides follow the general rules of magmatic fractional crystallization. The fractional crystallization of mineral phases of augite in the early stage (namely in the lamprophyre stage) and hornblende and plagioclase in the late stage (namely from the andesite\|porphyrite to dacite porphyrite stage) controlled the magma evolution. The rocks are enriched in alkali and have higher K\-2O and lower TiO\-2 contents, as well as strongly enriched in large ion lithophile elements such as Ba, Sr and Rb, and LREE but strongly depleted in transition elements such as Cr and Ni. Rb is depleted relative to Sr and Ba, and Rb/Sr ratios are low. Volatile constituents are abundant. These characteristics indicate that the initial magma originated from the metamorphic subduction ocean\|crust that had been intensively contaminated by crustal materials, and retrogressive metamorphism is characterized by low\|degree partial melting during back\|arc spreading. Varying degrees of partial melting and different emplacement environments may be the main causes for the evolution of the rocks and mineralization in different degrees in the two gold ore fields at Linglong and Dayigezhuang, Shandong.展开更多
This paper reports that the high-K HfO2 gate dielectrics are fabricated on n-germanium substrates by sputtering Hf on Ge and following by a furnace annealing. The impacts of sputtering ambient, annealing ambient and a...This paper reports that the high-K HfO2 gate dielectrics are fabricated on n-germanium substrates by sputtering Hf on Ge and following by a furnace annealing. The impacts of sputtering ambient, annealing ambient and annealing temperature on the electrical properties of high-K HfO2 gate dielectrics on germanium substrates are investigated. Experimental results indicate that high-K HfO2 gate dielectrics on germanium substrates with good electrical characteristics are obtained, the electrical properties of high-K HfO2 gate dielectrics is strongly correlated with sputtering ambient, annealing ambient and annealing temperature.展开更多
A novel trench MOS barrier Schottky diode（TMBS） device with a high-k material introduced into the gate insulator is reported, which is named high-k TMBS. By simulation with Medici, it is found that the high-k TMBS c...A novel trench MOS barrier Schottky diode（TMBS） device with a high-k material introduced into the gate insulator is reported, which is named high-k TMBS. By simulation with Medici, it is found that the high-k TMBS can have 19.8% lower leakage current while maintaining the same breakdown voltage and forward turn-on voltage compared with the conventional regular trench TMBS.展开更多
Gadolinium oxide(Gd2O3) film has potential as a candidate gate dielectric to replace Hf O2. In this work,we provide a simple method by trace Ta(~1%) doping to significantly improve the dielectric properties of Gd2O3 f...Gadolinium oxide(Gd2O3) film has potential as a candidate gate dielectric to replace Hf O2. In this work,we provide a simple method by trace Ta(~1%) doping to significantly improve the dielectric properties of Gd2O3 film. And effects of annealing temperatures of Ta-doped Gd2O3(GTO) films are investigated in detail. Results show that GTO film annealed at 500℃ exhibits excellent performance as a novel gate dielectric material for integrated circuit, showing a small surface roughness of 0.199 nm, a large band gap of 5.45 e V, a high dielectric constant(k) of 21.2 and a low leakage current density(Jg) of 2.10 × 10^-3A/cm^2.All properties of GTO films are superior to pure Gd2O3 films and these GTO films meet the requirements for next-generation gate dielectrics. In addition, impedance spectrum is first used to analyze the equivalent circuit of GTO based metal-oxide-semiconductor(MOS) capacitors, which represents a new insight to understand observed electrical behaviors.展开更多
A physical model for mobility degradation by interface-roughness scattering and Coulomb scattering is proposed for SiGe p-MOSFET with a high-k dielectric/SiO2 gate stack. Impacts of the two kinds of scatterings on mob...A physical model for mobility degradation by interface-roughness scattering and Coulomb scattering is proposed for SiGe p-MOSFET with a high-k dielectric/SiO2 gate stack. Impacts of the two kinds of scatterings on mobility degradation are investigated. Effects of interlayer （SiO2） thickness and permittivities of the high-k dielectric and interlayer on carrier mobility are also discussed. It is shown that a smooth interface between high-k dielectric and interlayer, as well as moderate permittivities of high-k dielectrics, is highly desired to improve carriers mobility while keeping alow equivalent oxide thickness. Simulated results agree reasonably with experimental data.展开更多
The decreasing feature sizes in complementary metal-oxide semiconductor （CMOS） transistor technology will require the replacement of SiO2 with gate dielectrics that have a high dielectric constant （high-k） because...The decreasing feature sizes in complementary metal-oxide semiconductor （CMOS） transistor technology will require the replacement of SiO2 with gate dielectrics that have a high dielectric constant （high-k） because as the SiO2 gate thickness is reduced below 1.4 nm, electron tunnelling effects and high leakage currents occur in SiO2, which present serious obstacles to future device reliability. In recent years significant progress has been made on the screening and selection of high-k gate dielectrics, understanding their physical properties, and their integration into CMOS technology. Now the family of hafnium oxide-based materials has emerged as the leading candidate for high-k gate dielectrics due to their excellent physical properties. It is also realized that the high-k oxides must be implemented in conjunction with metal gate electrodes to get sufficient potential for CMOS continue scaling. In the advanced nanoscale Si-based CMOS devices, the composition and thickness of interfacial layers in the gate stacks determine the critical performance of devices. Therefore, detailed atomic- scale understandings of the microstructures and interfacial structures built in the advanced CMOS gate stacks, are highly required. In this paper, several high-resolution electron, ion, and photon-based techniques currently used to characterize the high-k gate dielectrics and interfaces at atomic-scale, are reviewed. Particularly, we critically review the research progress on the characterization of interface behavior and structural evolution in the high-k gate dielectrics by high-resolution transmission electron microscopy （HRTEM） and the related techniques based on scanning transmission electron microscopy （STEM）, including high-angle annular dark- field （HAADF） imaging （also known as Z-contrast imaging）, electron energy-loss spectroscopy （EELS）, and energy dispersive X-ray spectroscopy （EDS）, due to that HRTEM and STEM have become essential metrology tools for characterizing the dielectric gate stacks in the present and future generations of CMOS devices. In Section 1 of this review, the working principles of each technique are briefly introduced and their key features are outlined. In Section 2, microstructural characterizations of high-k gate dielectrics at atomic-scale by electron microscopy are critically reviewed by citing some recent results reported on high-k gate dielectrics. In Section 3, metal gate electrodes and the interfacial structures between high-k dielectrics and metal gates are discussed. The electron beam damage effects in high-k gate stacks are also evaluated, and their origins and prevention are described in Section 4. Finally, we end this review with personal perspectives towards the future challenges of atomic-scale material characterization in advanced CMOS gate stacks.展开更多
With the continued downscaling of complementary metal-oxide-semiconductor field effect transistor dimensions, high-dielectric constant （high-k） gate materials, as alternatives to SiO2, have been extensively investig...With the continued downscaling of complementary metal-oxide-semiconductor field effect transistor dimensions, high-dielectric constant （high-k） gate materials, as alternatives to SiO2, have been extensively investigated. Hf （Zr）-based high-k gate dielectric thin films have been regarded as the most promising candidates for high-k gate dielectric according to the International Technology Roadmap for Semiconductor due to their excellent physical properties and performance. This paper reviews the recent progress on Hf （Zr）-based high-k gate dielectrics based on PVD （physical vapor deposition） process. This article begins with a survey of various methods developed for generating Hf （Zr）-based high-k gate dielectrics, and then mainly focuses on microstructure, synthesis, characterization, formation mechanisms of interfacial layer, and optical properties of Hf （Zr）-based high-k gate dielectrics. Finally, this review concludes with personal perspectives towards future research on Hf （Zr）-based high-k gate dielectrics.展开更多
文摘Cenozoic high\|K igneous rocks are widely distributed in eastern Tibet. These rocks are exposed as flows, dykes and small intrusions along a narrow north\|south trending zone, which follows Tertiary fold belts and the Batang—Lijiang and Ailao Shan—Red River strike\|slip systems. Although several models were proposed to interpret their petrogenesis (Deng, 1989; Arnaud et al., 1991; Turner et al., 1996; Yin et al., 1995; Miller et al., 1999), their origin still remains hotly debated. Moreover, the published results were only focused on the high\|K igneous rocks resulted from partial melting of an enriched lithospheric mantle. Here, we present the detailed documents to testify the existence of a new kind of high\|K igneous rocks in eastern Tibet.Our new 39 Ar/ 40 Ar age data (Wang et al., 1999) and published age data for high\|K rocks in eastern Tibet show two distinctive magmatic episodes: one between 42Ma and 24Ma, and the other since ca.16Ma. They correspond to two types of high\|K magmatism in eastern Tibet. We name the older and younger groups as types Ⅰ and Ⅱ, respectively.
文摘The major element, trace element and Nd-Sr isotopic composition of Cenozoic basaltic volcanic rocks from the Maguan area, eastern Tibet, indicates that the volcanic rocks are enriched in alkalis, especially K (K-2O up to {3.81%}) and depleted in Ti (TiO-2={1.27%}-{2.00%}). These rocks may be classified as two groups, based on their Mg+# numbers: one may represent primary magma (Mg+# numbers from 68 to 69), and the other, the evolved magma (Mg+# numbers from 49 to 57). Their REE contents are very high (∑REE={155.06}-{239.04}μg/g). Their REE distribution patterns are of the right-inclined type, characterized by LREE enrichment [(La/Yb)-N={12.0}-{19.2}], no Ce anomaly (Ce/Ce+*={1.0}), and weak negative Eu anomaly (Eu/Eu+*={0.9}). The rocks are highly enriched in Rb, Sr and Ba ({59.5}-{93.8} μg/g, 732-999 μg/g, and 450-632 μg/g, respectively), high in U and Th ({1.59}-{2.31} μg/g and {4.73}-{8.16} μg/g, respectively), and high in Nb, Ta, Zr and Hf (70-118 μg/g, {3.72}-{5.93} μg/g, 215-381 μg/g, and {5.47}-{9.03} μg/g, respectively). In the primitive mantle-normalized incompatible element spidergram, Nb, Ta, Zr, Hf and P show positive anomalies, whereas Ba, Ti and Y show negative anomalies. The {{}+{87}Sr/+{86}Sr} ratios range from {0.704029} to {0.704761}; {{}+{143}Nd/+{144}Nd} from {0.512769} to {0.512949}; and εNd from {+2.6} to {+6.1}. These geochemical features might suggest that the potential source of the basaltic high-K volcanic rocks in the Maguan area is similar to the OIB-source mantle of Hawaii and Kergeulen volcanic rocks.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61704084 and 61874059)。
文摘This paper presents a new silicon-on-insulator(SOI) lateral-double-diffused metal-oxide-semiconductor transistor(LDMOST) device with alternated high-k dielectric and step doped silicon pillars(HKSD device). Due to the modulation of step doping technology and high-k dielectric on the electric field and doped profile of each zone, the HKSD device shows a greater performance. The analytical models of the potential, electric field, optimal breakdown voltage, and optimal doped profile are derived. The analytical results and the simulated results are basically consistent, which confirms the proposed model suitable for the HKSD device. The potential and electric field modulation mechanism are investigated based on the simulation and analytical models. Furthermore, the influence of the parameters on the breakdown voltage(BV) and specific on-resistance(R_(on,sp)) are obtained. The results indicate that the HKSD device has a higher BV and lower R_(on,sp) compared to the SD device and HK device.
基金supported by the National Science Foundation of China (NSFC) project(41203039)the innovation team of ore-forming dynamics and prediction of concealed deposits, KMUST(2008)
文摘The Langdu high-K calc-alkaline intrusions are located in the Zhongdian area, which is the southern part of the Yidun island arc. These intrusive rocks consist mainly of monzonite porphyry, granodiorite, and diorite porphyry. The K20 content of majority of these rocks is greater than 3%, and, in the K20-SiO2 diagram, all the samples fall into the high-K calc-alkaline to shoshonitic fields. They are enriched in light rare earth elements （LREEs） and depleted in heavy rare earth elements （HREEs; LaN/YbN = 14.3-21.2）, and show slightly negative Eu anomalies （6Eu = 0.77-1.00）. These rocks have high K, Rb, Sr, and Ba contents; moderate to high enrichment of compatible elements （Cr = 36.7-79.9 ppm, Co = 9.6-16.4 ppm, and MgO = 2.2%-3.4%）; low Nb, Ta, and Ti contents, and characteristic of low high field strength elements（HFSEs） versus incompatible elements ratios （Nb/Th = 0.75, Nb/La = 0.34） and incompatible elements ratios （Nb/U = 3.0 and Ce/Pb = 5.1, Ba/Rb = 12.0）. These rocks exhibit restricted Sr and Nd isotopic compositions, with （87Sr/S6Sr）i values ranging from 0.7044 to 0.7069 and ENd（t） values from -2.8 to -2.2. The Sr-Nd isotope systematic and specific trace element ratios suggest that Langdu high-K calc-alkaline intrusive rocks derived from a metasomatized mantle source. The unique geochemical feature of intrusive rocks can be modeled successfully using different members of a slightly enriched mantle, a slab-derived fluid, and terrigenous sediments. It can be inferred that the degree of partial melting and the presence of specific components are temporally related to the tectonic evolution of the Zhongdian island arc. Formation of these rocks can be explained by the various degrees of melting within an ascending region of the slightly enriched mantle, triggered by the subduction of the Garz^--Litang ocean, and an interaction between the slab-derived fluid and the terrigenous sediments.
文摘This paper deals with the high\|K, potassic dike rocks in two types of gold ore fields at Linglong and Dayigezhuang, Northwest Jiaodong. The rocks can be divided into three types, i.e., (1) lamprophyre, (2) andesite porphyrite, and (3) dacite porphyrite, based on their geological occurrence and space\|time relationship with gold mineralization. These rocks were the products of early, synchronous and late mineralization, respectively. Element geochemistry shows that variations in chemical composition of major oxides follow the general rules of magmatic fractional crystallization. The fractional crystallization of mineral phases of augite in the early stage (namely in the lamprophyre stage) and hornblende and plagioclase in the late stage (namely from the andesite\|porphyrite to dacite porphyrite stage) controlled the magma evolution. The rocks are enriched in alkali and have higher K\-2O and lower TiO\-2 contents, as well as strongly enriched in large ion lithophile elements such as Ba, Sr and Rb, and LREE but strongly depleted in transition elements such as Cr and Ni. Rb is depleted relative to Sr and Ba, and Rb/Sr ratios are low. Volatile constituents are abundant. These characteristics indicate that the initial magma originated from the metamorphic subduction ocean\|crust that had been intensively contaminated by crustal materials, and retrogressive metamorphism is characterized by low\|degree partial melting during back\|arc spreading. Varying degrees of partial melting and different emplacement environments may be the main causes for the evolution of the rocks and mineralization in different degrees in the two gold ore fields at Linglong and Dayigezhuang, Shandong.
基金Project supported by the National Natural Science Foundation of China （Grant No 90307006）, by the National High Tech. Development Program of China （Grant No 2003AA1Z1370）, and by the State Key Development Program for Basic Research of China （Grant No G2000036500）.
文摘This paper reports that the high-K HfO2 gate dielectrics are fabricated on n-germanium substrates by sputtering Hf on Ge and following by a furnace annealing. The impacts of sputtering ambient, annealing ambient and annealing temperature on the electrical properties of high-K HfO2 gate dielectrics on germanium substrates are investigated. Experimental results indicate that high-K HfO2 gate dielectrics on germanium substrates with good electrical characteristics are obtained, the electrical properties of high-K HfO2 gate dielectrics is strongly correlated with sputtering ambient, annealing ambient and annealing temperature.
基金Project supported by the National Basic Research Program of China(Grant No.2011CBA00607)the National Natural Science Foundation of China(Grant Nos.61106089 and 61376097)the Zhejiang Provincial Natural Science Foundation of China(Grant No.LR14F040001)
文摘A novel trench MOS barrier Schottky diode（TMBS） device with a high-k material introduced into the gate insulator is reported, which is named high-k TMBS. By simulation with Medici, it is found that the high-k TMBS can have 19.8% lower leakage current while maintaining the same breakdown voltage and forward turn-on voltage compared with the conventional regular trench TMBS.
基金supported financially by the Project of Ministry of Science and Technology of the People’s Republic of China (No. 2017YFB0405902)the National Natural Science Foundation of China (Nos. 51431001, 51771002, 21771006, U1607126 and 21621061)Beijing Municipal Commission of Science and Technology (No. Z17110000091702)
文摘Gadolinium oxide(Gd2O3) film has potential as a candidate gate dielectric to replace Hf O2. In this work,we provide a simple method by trace Ta(~1%) doping to significantly improve the dielectric properties of Gd2O3 film. And effects of annealing temperatures of Ta-doped Gd2O3(GTO) films are investigated in detail. Results show that GTO film annealed at 500℃ exhibits excellent performance as a novel gate dielectric material for integrated circuit, showing a small surface roughness of 0.199 nm, a large band gap of 5.45 e V, a high dielectric constant(k) of 21.2 and a low leakage current density(Jg) of 2.10 × 10^-3A/cm^2.All properties of GTO films are superior to pure Gd2O3 films and these GTO films meet the requirements for next-generation gate dielectrics. In addition, impedance spectrum is first used to analyze the equivalent circuit of GTO based metal-oxide-semiconductor(MOS) capacitors, which represents a new insight to understand observed electrical behaviors.
基金Project supported by the National Natural Science Foundation of China （Grant No 60776016）, the RGC of HKSAR, China （Grant No HKU7142/05E）, and Open Foundation of State Key Laboratory of Advanced Technology for Materials Synthesis and Processing （Grant No WUT2006M02）.
文摘A physical model for mobility degradation by interface-roughness scattering and Coulomb scattering is proposed for SiGe p-MOSFET with a high-k dielectric/SiO2 gate stack. Impacts of the two kinds of scatterings on mobility degradation are investigated. Effects of interlayer （SiO2） thickness and permittivities of the high-k dielectric and interlayer on carrier mobility are also discussed. It is shown that a smooth interface between high-k dielectric and interlayer, as well as moderate permittivities of high-k dielectrics, is highly desired to improve carriers mobility while keeping alow equivalent oxide thickness. Simulated results agree reasonably with experimental data.
基金support from Natural Science Foundation of Jiangsu Province (ProjectNo. BK2007130)National Natural Science Foundation of China (Grant Nos. 10874065, 60576023 and 60636010)+3 种基金Ministry of Science and Technology of China (Grant No.2009CB929503)Ministry of Science and Technology of China (Grant Nos. 2009CB929503 and2009ZX02101-4)the project sponsored by the Scientific Research Foundation for the Returned Overseas Chinese Scholars, State Education MinistryNational Found for Fostering Talents of Basic Science (NFFTBS) (ProjectNo. J0630316)
文摘The decreasing feature sizes in complementary metal-oxide semiconductor （CMOS） transistor technology will require the replacement of SiO2 with gate dielectrics that have a high dielectric constant （high-k） because as the SiO2 gate thickness is reduced below 1.4 nm, electron tunnelling effects and high leakage currents occur in SiO2, which present serious obstacles to future device reliability. In recent years significant progress has been made on the screening and selection of high-k gate dielectrics, understanding their physical properties, and their integration into CMOS technology. Now the family of hafnium oxide-based materials has emerged as the leading candidate for high-k gate dielectrics due to their excellent physical properties. It is also realized that the high-k oxides must be implemented in conjunction with metal gate electrodes to get sufficient potential for CMOS continue scaling. In the advanced nanoscale Si-based CMOS devices, the composition and thickness of interfacial layers in the gate stacks determine the critical performance of devices. Therefore, detailed atomic- scale understandings of the microstructures and interfacial structures built in the advanced CMOS gate stacks, are highly required. In this paper, several high-resolution electron, ion, and photon-based techniques currently used to characterize the high-k gate dielectrics and interfaces at atomic-scale, are reviewed. Particularly, we critically review the research progress on the characterization of interface behavior and structural evolution in the high-k gate dielectrics by high-resolution transmission electron microscopy （HRTEM） and the related techniques based on scanning transmission electron microscopy （STEM）, including high-angle annular dark- field （HAADF） imaging （also known as Z-contrast imaging）, electron energy-loss spectroscopy （EELS）, and energy dispersive X-ray spectroscopy （EDS）, due to that HRTEM and STEM have become essential metrology tools for characterizing the dielectric gate stacks in the present and future generations of CMOS devices. In Section 1 of this review, the working principles of each technique are briefly introduced and their key features are outlined. In Section 2, microstructural characterizations of high-k gate dielectrics at atomic-scale by electron microscopy are critically reviewed by citing some recent results reported on high-k gate dielectrics. In Section 3, metal gate electrodes and the interfacial structures between high-k dielectrics and metal gates are discussed. The electron beam damage effects in high-k gate stacks are also evaluated, and their origins and prevention are described in Section 4. Finally, we end this review with personal perspectives towards the future challenges of atomic-scale material characterization in advanced CMOS gate stacks.
基金the support from the National Major Project of Fundamental Research:Nanomaterials and Nanostructures(Grant No.2005CB623603)the National Natural Science Foundation of China(Grant No.10674138)the Special Fund for President Scholarship,Chinese Academy of Sciences.
文摘With the continued downscaling of complementary metal-oxide-semiconductor field effect transistor dimensions, high-dielectric constant （high-k） gate materials, as alternatives to SiO2, have been extensively investigated. Hf （Zr）-based high-k gate dielectric thin films have been regarded as the most promising candidates for high-k gate dielectric according to the International Technology Roadmap for Semiconductor due to their excellent physical properties and performance. This paper reviews the recent progress on Hf （Zr）-based high-k gate dielectrics based on PVD （physical vapor deposition） process. This article begins with a survey of various methods developed for generating Hf （Zr）-based high-k gate dielectrics, and then mainly focuses on microstructure, synthesis, characterization, formation mechanisms of interfacial layer, and optical properties of Hf （Zr）-based high-k gate dielectrics. Finally, this review concludes with personal perspectives towards future research on Hf （Zr）-based high-k gate dielectrics.
文摘为了缓解SiC UMOSFET栅底部的电场尖峰问题,优化击穿电压(Breakdown Voltage,BV)和特征导通电阻(Ron,sp)的折中关系,利用Sentaurus TCAD仿真软件研究了一种含高k栅介质层与P型屏蔽区的4H-SiC超结UMOSFET结构(Hk SiC SJ UMOS)。该结构在沟槽底部加入了P型屏蔽层来减小栅电场,采用多次外延生长与高能离子注入的方法引入了上下浓度不同的两段P柱形成超结结构,从而在保持高击穿电压的同时降低了特征导通电阻,此外高k栅介质层的加入可以使电场分布更加均匀,同时增加漂移区表面的电荷量以降低特征导通电阻。仿真结果表明,与传统SiC UMOSFET结构(Conv SiC UMOS)相比,未加入高k介质的SiC超结UMOSFET结构(SiC SJ UMOS)击穿电压提升了23.4%,特征导通电阻下降了14.6%,而加入高k介质层后的结构(Hk SiC SJ UMOS)与传统结构相比击穿电压提高了27.8%,特征导通电阻降低了31.1%,其FoM优值是传统结构的约2.37倍,具有更优良的电学特性。
