We report the fabrication of 4-inch nano patterned wafer by two-beam laser interference lithography and analyze the uniformity in detail. The profile of the dots array with a period of 800 nm divided into five regions...We report the fabrication of 4-inch nano patterned wafer by two-beam laser interference lithography and analyze the uniformity in detail. The profile of the dots array with a period of 800 nm divided into five regions is characterized by a scanning electron microscope. The average size in each region ranges from 270 nm to 320 nm,and the deviation is almost 4%, which is approaching the applicable value of 3% in the industrial process. We simulate the two-beam laser interference lithography system with MATLAB software and then calculate the distribution of light intensity around the 4 inch area. The experimental data fit very well with the calculated results. Analysis of the experimental data and calculated data indicates that laser beam quality and space filter play important roles in achieving a periodical nanoscale pattern with high uniformity and large area. There is the potential to obtain more practical applications.展开更多
Spatial photonic Ising machines,as emerging artificial intelligence hardware solutions by leveraging unique physical phenomena,have shown promising results in solving large-scale combinatorial problems.However,spatial...Spatial photonic Ising machines,as emerging artificial intelligence hardware solutions by leveraging unique physical phenomena,have shown promising results in solving large-scale combinatorial problems.However,spatial light modulator enabled Ising machines still remain bulky,are very power demanding,and have poor stability.In this study,we propose an integrated XY Ising sampler based on a highly uniform multimode interferometer and a phase shifter array,enabling the minimization of both discrete and continuous spin Hamiltonians.We elucidate the performance of this computing platform in achieving fully programmable spin couplings and external magnetic fields.Additionally,we successfully demonstrate the weighted full-rank Ising model with a linear dependence of 0.82 and weighted MaxCut problem solving with the proposed sampler.Our results illustrate that the developed structure has significant potential for larger-scale,reduced power consumption and increased operational speed,positioning it as a versatile platform for commercially viable high-performance samplers of combinatorial optimization problems.展开更多
Crossbar array provides a cost-effective approach for achieving high-density integration of two-terminal functional devices. However, the ＂sneaking current problem＂, which can lead to read failure, is a severe chall...Crossbar array provides a cost-effective approach for achieving high-density integration of two-terminal functional devices. However, the ＂sneaking current problem＂, which can lead to read failure, is a severe challenge in crossbar arrays. To inhibit the sneaking current from unselected cells, the integration of individual selection devices is necessary. In this work, we report a novel TaOx-based selector exhibiting a trapezoidal band structure formed by tuning the concentration of defects in the oxide. Salient features such as a high current density （1 MA·cm^-2）, high selectivity （5 × 10^4）, low off-state current （-10 pA）, robust endurance （〉10^10）, self-compliance, and excellent uniformity were successfully achieved. The integrated one-selector one-resistor （1S1R） device exhibits high nonlinearity in the low resistance state （LRS）, which is quite effective in solving the sneaking current issue.展开更多
Conductive‐bridge random access memory(CBRAM)emerges as a promising candidate for next‐generation memory and storage device.However,CBRAMs are prone to degenerate and fail during electrochemical metallization proces...Conductive‐bridge random access memory(CBRAM)emerges as a promising candidate for next‐generation memory and storage device.However,CBRAMs are prone to degenerate and fail during electrochemical metallization processes.To address this issue,herein we propose a self‐repairability strategy for CBRAMs.Amorphous NbSe_(2) was designed as the resistive switching layer,with Cu and Au as the top and bottom electrodes,respectively.The NbSe_(2) CBRAMs demonstrate exceptional cycle‐to‐cycle and device‐to‐device uniformity,with forming‐free and compliance current‐free resistive switching characteristics,low‐operation voltage,and competitive endurance and retention performance.Most importantly,the self‐repairable behavior is discovered for the first time in CBRAM.The device after failure can recover its performance to the initially normal state by operating with a slightly large reset voltage.The existence of Cu conductive filament and excellent controllability of Cu migration in the NbSe_(2) switching layer has been revealed by a designed broken‐down point approach,which is responsible for the self‐repairable behavior of NbSe_(2) CBRAMs.Our self‐repairable and high‐uniform amorphous NbSe_(2) CBRAM may open the door to the development of memory and storage devices in the future.展开更多
A new type of single-walled carbon nanotube （SWNT） thin-film transistor （TFT） structure with a nanomesh network channel has been fabricated from a pre- separated semiconducting nanotube solution and simultaneously...A new type of single-walled carbon nanotube （SWNT） thin-film transistor （TFT） structure with a nanomesh network channel has been fabricated from a pre- separated semiconducting nanotube solution and simultaneously achieved both high uniformity and a high on/off ratio for application in large-scale integrated circuits. The nanomesh structure is prepared on a high-density SWNT network channel and enables a high on/off ratio while maintaining the excellent uniformity of the electrical properties of the SWNT TFTs. These effects are attributed to the effective elimination of metallic paths across the source/drain electrodes by forming the nanomesh structure in the high-density SWNT network channel. Therefore, our approach can serve as a critical foundation for future nanotube-based thin- film display electronics.展开更多
Based on the work of Shu [SIAM J. Sci. Stat. Comput, 9 （1988）, pp.1073-1084], we construct a class of high order multi-step temporal discretization procedure for finite volume Hermite weighted essential non-oscillat...Based on the work of Shu [SIAM J. Sci. Stat. Comput, 9 （1988）, pp.1073-1084], we construct a class of high order multi-step temporal discretization procedure for finite volume Hermite weighted essential non-oscillatory （HWENO） methods to solve hyperbolic conservation laws. The key feature of the multi-step temporal discretization procedure is to use variable time step with strong stability preserving （SSP）. The multi-step tem- poral discretization methods can make full use of computed information with HWENO spatial discretization by holding the former computational values. Extensive numerical experiments are presented to demonstrate that the finite volume HWENO schemes with multi-step diseretization can achieve high order accuracy and maintain non-oscillatory properties near discontinuous region of the solution.展开更多
基金Supported by the Scientific Equipment Research Program of Chinese Academy of Sciences under Grant No 2014Y4201449
文摘We report the fabrication of 4-inch nano patterned wafer by two-beam laser interference lithography and analyze the uniformity in detail. The profile of the dots array with a period of 800 nm divided into five regions is characterized by a scanning electron microscope. The average size in each region ranges from 270 nm to 320 nm,and the deviation is almost 4%, which is approaching the applicable value of 3% in the industrial process. We simulate the two-beam laser interference lithography system with MATLAB software and then calculate the distribution of light intensity around the 4 inch area. The experimental data fit very well with the calculated results. Analysis of the experimental data and calculated data indicates that laser beam quality and space filter play important roles in achieving a periodical nanoscale pattern with high uniformity and large area. There is the potential to obtain more practical applications.
基金National Natural Science Foundation of China(62175146,62235011)。
文摘Spatial photonic Ising machines,as emerging artificial intelligence hardware solutions by leveraging unique physical phenomena,have shown promising results in solving large-scale combinatorial problems.However,spatial light modulator enabled Ising machines still remain bulky,are very power demanding,and have poor stability.In this study,we propose an integrated XY Ising sampler based on a highly uniform multimode interferometer and a phase shifter array,enabling the minimization of both discrete and continuous spin Hamiltonians.We elucidate the performance of this computing platform in achieving fully programmable spin couplings and external magnetic fields.Additionally,we successfully demonstrate the weighted full-rank Ising model with a linear dependence of 0.82 and weighted MaxCut problem solving with the proposed sampler.Our results illustrate that the developed structure has significant potential for larger-scale,reduced power consumption and increased operational speed,positioning it as a versatile platform for commercially viable high-performance samplers of combinatorial optimization problems.
基金Acknowledgements This work was supported by the National Key Research and Development Program of China （Nos. 2016YFA0203800 and 2016YFA0201803） and the National Natural Science Foundation of China （No. 61522408）.
文摘Crossbar array provides a cost-effective approach for achieving high-density integration of two-terminal functional devices. However, the ＂sneaking current problem＂, which can lead to read failure, is a severe challenge in crossbar arrays. To inhibit the sneaking current from unselected cells, the integration of individual selection devices is necessary. In this work, we report a novel TaOx-based selector exhibiting a trapezoidal band structure formed by tuning the concentration of defects in the oxide. Salient features such as a high current density （1 MA·cm^-2）, high selectivity （5 × 10^4）, low off-state current （-10 pA）, robust endurance （〉10^10）, self-compliance, and excellent uniformity were successfully achieved. The integrated one-selector one-resistor （1S1R） device exhibits high nonlinearity in the low resistance state （LRS）, which is quite effective in solving the sneaking current issue.
基金supported by the National Natural Science Foundation of China(No.U20A20209)Zhejiang Provincial Key Research and Development Program(No.2021C01030)“Pioneer”and“Leading Goose”R&D Program of Zhejiang Province(No.2021C01SA301612).
文摘Conductive‐bridge random access memory(CBRAM)emerges as a promising candidate for next‐generation memory and storage device.However,CBRAMs are prone to degenerate and fail during electrochemical metallization processes.To address this issue,herein we propose a self‐repairability strategy for CBRAMs.Amorphous NbSe_(2) was designed as the resistive switching layer,with Cu and Au as the top and bottom electrodes,respectively.The NbSe_(2) CBRAMs demonstrate exceptional cycle‐to‐cycle and device‐to‐device uniformity,with forming‐free and compliance current‐free resistive switching characteristics,low‐operation voltage,and competitive endurance and retention performance.Most importantly,the self‐repairable behavior is discovered for the first time in CBRAM.The device after failure can recover its performance to the initially normal state by operating with a slightly large reset voltage.The existence of Cu conductive filament and excellent controllability of Cu migration in the NbSe_(2) switching layer has been revealed by a designed broken‐down point approach,which is responsible for the self‐repairable behavior of NbSe_(2) CBRAMs.Our self‐repairable and high‐uniform amorphous NbSe_(2) CBRAM may open the door to the development of memory and storage devices in the future.
文摘A new type of single-walled carbon nanotube （SWNT） thin-film transistor （TFT） structure with a nanomesh network channel has been fabricated from a pre- separated semiconducting nanotube solution and simultaneously achieved both high uniformity and a high on/off ratio for application in large-scale integrated circuits. The nanomesh structure is prepared on a high-density SWNT network channel and enables a high on/off ratio while maintaining the excellent uniformity of the electrical properties of the SWNT TFTs. These effects are attributed to the effective elimination of metallic paths across the source/drain electrodes by forming the nanomesh structure in the high-density SWNT network channel. Therefore, our approach can serve as a critical foundation for future nanotube-based thin- film display electronics.
文摘Based on the work of Shu [SIAM J. Sci. Stat. Comput, 9 （1988）, pp.1073-1084], we construct a class of high order multi-step temporal discretization procedure for finite volume Hermite weighted essential non-oscillatory （HWENO） methods to solve hyperbolic conservation laws. The key feature of the multi-step temporal discretization procedure is to use variable time step with strong stability preserving （SSP）. The multi-step tem- poral discretization methods can make full use of computed information with HWENO spatial discretization by holding the former computational values. Extensive numerical experiments are presented to demonstrate that the finite volume HWENO schemes with multi-step diseretization can achieve high order accuracy and maintain non-oscillatory properties near discontinuous region of the solution.
