We demonstrate high-performance In0.23 Ga0.77 As channel metal-oxide-semiconductor field-effect transistors （ MOS- FETs） with high on-current to off-current （Ion/Ioff） ratio grown on semi-insulating GaAs wafers by...We demonstrate high-performance In0.23 Ga0.77 As channel metal-oxide-semiconductor field-effect transistors （ MOS- FETs） with high on-current to off-current （Ion/Ioff） ratio grown on semi-insulating GaAs wafers by metal-organic chemical vapor deposition （MOCVD）. The 2μm channel-length devices exhibit a peak extrinsic transeonductance of 150 mS/mm and a drain current up to 500 mA/mm. The maximum effective mobility is 1680 cm2/Vs extracted by the split C-V method. Furthermore, the Ion/Ioff ratio is significantly improved from approximately 4.5 × 10^3 up to approximately 4.32 × 10^4 by controlling the etch thickness of In0.49Ga0.51P, The high drain current and high Ion/Ioff ratio of the In0.23Ga0.77As channel MOSFETs are achieved due to the high effective mobility and the low gate leakage current density.展开更多
在设计汽车雷达系统天线时,为实现其K波段天线圆极化特性,提出了在基片集成波导顶层开交叉缝隙的结构,并采用金属柱加扰的方法展宽了天线的工作频带。使用三维电磁仿真软件HFSS在罗杰斯介质板Rogers 5880上进行设计优化,得到4个交叉缝...在设计汽车雷达系统天线时,为实现其K波段天线圆极化特性,提出了在基片集成波导顶层开交叉缝隙的结构,并采用金属柱加扰的方法展宽了天线的工作频带。使用三维电磁仿真软件HFSS在罗杰斯介质板Rogers 5880上进行设计优化,得到4个交叉缝隙阵元的圆极化SIW缝隙天线。仿真结果显示:其轴比小于3 d B的带宽为370 MHz,在24.15 GHz频点上天线增益为8.6 d Bi,在24.00~24.25 GHz频率范围内,电压驻波比小于1.5。展开更多
文摘We demonstrate high-performance In0.23 Ga0.77 As channel metal-oxide-semiconductor field-effect transistors （ MOS- FETs） with high on-current to off-current （Ion/Ioff） ratio grown on semi-insulating GaAs wafers by metal-organic chemical vapor deposition （MOCVD）. The 2μm channel-length devices exhibit a peak extrinsic transeonductance of 150 mS/mm and a drain current up to 500 mA/mm. The maximum effective mobility is 1680 cm2/Vs extracted by the split C-V method. Furthermore, the Ion/Ioff ratio is significantly improved from approximately 4.5 × 10^3 up to approximately 4.32 × 10^4 by controlling the etch thickness of In0.49Ga0.51P, The high drain current and high Ion/Ioff ratio of the In0.23Ga0.77As channel MOSFETs are achieved due to the high effective mobility and the low gate leakage current density.
文摘在设计汽车雷达系统天线时,为实现其K波段天线圆极化特性,提出了在基片集成波导顶层开交叉缝隙的结构,并采用金属柱加扰的方法展宽了天线的工作频带。使用三维电磁仿真软件HFSS在罗杰斯介质板Rogers 5880上进行设计优化,得到4个交叉缝隙阵元的圆极化SIW缝隙天线。仿真结果显示:其轴比小于3 d B的带宽为370 MHz,在24.15 GHz频点上天线增益为8.6 d Bi,在24.00~24.25 GHz频率范围内,电压驻波比小于1.5。
基金funded by the National Natural Science Foundation(51202284)the Suzhou City Project(SYG201301)+2 种基金Jiangsu Project(BE2016083)State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of SciencesKey Laboratory of Nanodevices and Applications,Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences
