The CrN and Cr-Al-Si-N films were deposited on Si wafer and SUS 304 substrates by a hybrid coating system with high power impulse magnetron sputtering (HIPIMS) and a DC pulse sputtering using Cr and AlSi targets under...The CrN and Cr-Al-Si-N films were deposited on Si wafer and SUS 304 substrates by a hybrid coating system with high power impulse magnetron sputtering (HIPIMS) and a DC pulse sputtering using Cr and AlSi targets under N2/Ar atmosphere.By varying the sputtering current of the AlSi target in the range of 0-2.5 A,both the Al and Si contents in the films increased gradually from 0 to 19.1% and 11.1% (mole fraction),respectively.The influences of the AlSi cathode DC pulse current on the microstructure,phase constituents,mechanical properties,and oxidation behaviors of the Cr-Al-Si-N films were investigated systematically.The results indicate that the as-deposited Cr-Al-Si-N films possess the typical nanocomposite structure,namely the face centered cubic (Cr,Al)N nano-crystallites are embedded in the amorphous Si3N4 matrix.With increasing the Al and Si contents,the hardness of the film first increases from 20.8 GPa for the CrN film to the peak value of 29.4 GPa for the Cr0.23Al0.14Si0.07 N film,and then decreases gradually.In the meanwhile,the Cr0.23Al0.14Si0.07N film also possesses excellent high-temperature oxidation resistance that is much better than that of the CrN film at 900 or 1000 °C.展开更多
The Cr–Si–N coatings were prepared by combining system of high-power impulse magnetron sputtering and pulsed DC magnetron sputtering. The Si content in the coating was adjusted by changing the sputtering power of th...The Cr–Si–N coatings were prepared by combining system of high-power impulse magnetron sputtering and pulsed DC magnetron sputtering. The Si content in the coating was adjusted by changing the sputtering power of the Si target.By virtue of electron-probe microanalysis, X-ray diffraction analysis and scanning electron microscopy, the influence of the Si content on the coating composition, phase constituents, deposition rate, surface morphology and microstructure was investigated systematically. In addition, the change rules of micro-hardness, internal stress, adhesion, friction coefficient and wear rate with increasing Si content were also obtained. In this work, the precipitation of silicon in the coating was found.With increasing Si content, the coating microstructure gradually evolved from continuous columnar to discontinuous columnar and quasi-equiaxed crystals; accordingly, the coating inner stress first declined sharply and then kept almost constant. Both the coating hardness and the friction coefficient have the same change tendency with the increase of the Si content, namely increasing at first and then decreasing. The Cr–Si–N coating presented the highest hardness and average friction coefficient for an Si content of about 9.7 at.%, but the wear resistance decreased slightly due to the high brittleness.The above phenomenon was attributed to a microstructural evolution of the Cr–Si–N coatings induced by the silicon addition.展开更多
Titanium nitride thin films were deposited on silicon by high power impulse magnetron sputtering(HiPIMS)method at different frequencies(162-637 Hz)and pulse-on time(60-322μs).Response surface methodology(RSM)was empl...Titanium nitride thin films were deposited on silicon by high power impulse magnetron sputtering(HiPIMS)method at different frequencies(162-637 Hz)and pulse-on time(60-322μs).Response surface methodology(RSM)was employed to study the simultaneous effect of frequency and pulse-on time on the current waveforms and the crystallographic orientation,microstructure,and in particular,the deposition rate of titanium nitride at constant time and average power equal to 250 W.The crystallographic structure and morphology of deposited films were analyzed using XRD and FESEM,respectively.It is found that the deposition rate of HiPIMS samples is tremendously dependent on pulse-on time and frequency of pulses where the deposition rate changes from 4.5 to 14.5 nm/min.The regression equations and analyses of variance(ANOVA)reveal that the maximum deposition rate(equal to(17±0.8)nm/min)occurs when the frequency is 537 Hz and pulse-on time is 212μs.The experimental measurement of the deposition rate under this condition gives rise to the deposition rate of 16.7 nm/min that is in good agreement with the predicted value.展开更多
A non-sputtering discharge is utilized to verify the effect of replacement of gas ions by metallic ions and consequent decrease in the secondary electron emission coefficient in the discharge current curves in high-po...A non-sputtering discharge is utilized to verify the effect of replacement of gas ions by metallic ions and consequent decrease in the secondary electron emission coefficient in the discharge current curves in high-power impulse magnetron sputtering （HiPIMS）. In the non-sputtering discharge involving hydrogen, replacement of ions is avoided while the rarefaction still contributes. The initial peak and ensuing decay disappear and all the discharge current curves show a similar feature as the HiPIMS discharge of materials with low sputtering yields such as carbon. The results demonstrate the key effect of ion replacement during sputtering.展开更多
本文采用电弧离子镀(Arc ion plating,AIP)和高功率脉冲磁控溅射(High power impulse magnetron sputtering,HiPIMS)复合方法,通过调控HiPIMS占空比在M2高速钢基体和单晶硅片上沉积TiZrN/TiN纳米多层膜,探究HiPIMS占空比对TiZrN/TiN纳...本文采用电弧离子镀(Arc ion plating,AIP)和高功率脉冲磁控溅射(High power impulse magnetron sputtering,HiPIMS)复合方法,通过调控HiPIMS占空比在M2高速钢基体和单晶硅片上沉积TiZrN/TiN纳米多层膜,探究HiPIMS占空比对TiZrN/TiN纳米多层膜微观结构和性能的影响规律。结果表明:随着HiPIMS占空比的增加,TiZrN/TiN纳米多层膜表面大颗粒数量呈先减少后增加趋势,同时薄膜厚度呈先减小后增大趋势。随着HiPIMS占空比从2%增加10%,TiZrN/TiN纳米多层膜择优取向从(111)晶面转变为(220)晶面,膜基结合力等级均为HF1级,硬度均在33 GPa以上,稳定摩擦因数在0.79左右。当HiPIMS占空比为2%时,TiZrN/TiN纳米多层膜的磨损率达到最小,为1.73×10^(-8) mm^(3)/(N·mm),薄膜的耐磨损性能最好。当HiPIMS占空比为6%时,TiZrN/TiN纳米多层膜的硬度和弹性模量分别增加到43.73GPa和362.98 GPa,自腐蚀电位可达到-0.39 V(vs SCE),自腐蚀电流密度为0.731μA/cm^(2),薄膜耐腐蚀性能最强,腐蚀速率较低。综合对比可知,HiPIMS占空比为6%,是TiZrN/TiN纳米多层膜制备的最佳工艺参数。展开更多
基金supported by a 2-Year Research Grant of Pusan National University,Korea
文摘The CrN and Cr-Al-Si-N films were deposited on Si wafer and SUS 304 substrates by a hybrid coating system with high power impulse magnetron sputtering (HIPIMS) and a DC pulse sputtering using Cr and AlSi targets under N2/Ar atmosphere.By varying the sputtering current of the AlSi target in the range of 0-2.5 A,both the Al and Si contents in the films increased gradually from 0 to 19.1% and 11.1% (mole fraction),respectively.The influences of the AlSi cathode DC pulse current on the microstructure,phase constituents,mechanical properties,and oxidation behaviors of the Cr-Al-Si-N films were investigated systematically.The results indicate that the as-deposited Cr-Al-Si-N films possess the typical nanocomposite structure,namely the face centered cubic (Cr,Al)N nano-crystallites are embedded in the amorphous Si3N4 matrix.With increasing the Al and Si contents,the hardness of the film first increases from 20.8 GPa for the CrN film to the peak value of 29.4 GPa for the Cr0.23Al0.14Si0.07 N film,and then decreases gradually.In the meanwhile,the Cr0.23Al0.14Si0.07N film also possesses excellent high-temperature oxidation resistance that is much better than that of the CrN film at 900 or 1000 °C.
基金supported by the Global Frontier Program through the Global Frontier Hybrid Interface Materials(GFHIM)of the National Research Foundation of Korea(NRF)funded by the Ministry of Science,ICT&Future Planning(No.2013M3A6B1078874)funded by the National Nature Science Foundation of China(No.51301181)+2 种基金the Tianjin Key Research Program of Application Foundation and Advanced Technology(No.15JCZDJC39700)the Tianjin Science and Technology correspondent project(No.16JCTPJC49500)the Innovation Team Training Plan of Tianjin Universities and colleges(No.TD12-5043)
文摘The Cr–Si–N coatings were prepared by combining system of high-power impulse magnetron sputtering and pulsed DC magnetron sputtering. The Si content in the coating was adjusted by changing the sputtering power of the Si target.By virtue of electron-probe microanalysis, X-ray diffraction analysis and scanning electron microscopy, the influence of the Si content on the coating composition, phase constituents, deposition rate, surface morphology and microstructure was investigated systematically. In addition, the change rules of micro-hardness, internal stress, adhesion, friction coefficient and wear rate with increasing Si content were also obtained. In this work, the precipitation of silicon in the coating was found.With increasing Si content, the coating microstructure gradually evolved from continuous columnar to discontinuous columnar and quasi-equiaxed crystals; accordingly, the coating inner stress first declined sharply and then kept almost constant. Both the coating hardness and the friction coefficient have the same change tendency with the increase of the Si content, namely increasing at first and then decreasing. The Cr–Si–N coating presented the highest hardness and average friction coefficient for an Si content of about 9.7 at.%, but the wear resistance decreased slightly due to the high brittleness.The above phenomenon was attributed to a microstructural evolution of the Cr–Si–N coatings induced by the silicon addition.
文摘Titanium nitride thin films were deposited on silicon by high power impulse magnetron sputtering(HiPIMS)method at different frequencies(162-637 Hz)and pulse-on time(60-322μs).Response surface methodology(RSM)was employed to study the simultaneous effect of frequency and pulse-on time on the current waveforms and the crystallographic orientation,microstructure,and in particular,the deposition rate of titanium nitride at constant time and average power equal to 250 W.The crystallographic structure and morphology of deposited films were analyzed using XRD and FESEM,respectively.It is found that the deposition rate of HiPIMS samples is tremendously dependent on pulse-on time and frequency of pulses where the deposition rate changes from 4.5 to 14.5 nm/min.The regression equations and analyses of variance(ANOVA)reveal that the maximum deposition rate(equal to(17±0.8)nm/min)occurs when the frequency is 537 Hz and pulse-on time is 212μs.The experimental measurement of the deposition rate under this condition gives rise to the deposition rate of 16.7 nm/min that is in good agreement with the predicted value.
基金Supported by the National Natural Science Foundation of China under Grant Nos 51301004 and U1330110the Guangdong Innovative and Entrepreneurial Research Team Program under Grant No 2013N080+1 种基金the Shenzhen Science and Technology Research Grant under Grant Nos JCYJ20140903102215536 and JCYJ20150828093127698the City University of Hong Kong Applied Research Grant under Grant No 9667104
文摘A non-sputtering discharge is utilized to verify the effect of replacement of gas ions by metallic ions and consequent decrease in the secondary electron emission coefficient in the discharge current curves in high-power impulse magnetron sputtering （HiPIMS）. In the non-sputtering discharge involving hydrogen, replacement of ions is avoided while the rarefaction still contributes. The initial peak and ensuing decay disappear and all the discharge current curves show a similar feature as the HiPIMS discharge of materials with low sputtering yields such as carbon. The results demonstrate the key effect of ion replacement during sputtering.
