In this work,we achieve high count-rate single-photon output in single-mode(SM)optical fiber.Epitaxial and dilute InAs/GaAs quantum dots(QDs)are embedded in a GaAs/AlGaAs distributed Bragg reflector(DBR)with a micro-p...In this work,we achieve high count-rate single-photon output in single-mode(SM)optical fiber.Epitaxial and dilute InAs/GaAs quantum dots(QDs)are embedded in a GaAs/AlGaAs distributed Bragg reflector(DBR)with a micro-pillar cavity,so as to improve their light emission extraction in the vertical direction,thereby enhancing the optical SM fiber’s collection capabil-ity(numerical aperture:0.13).By tuning the temperature precisely to make the quantum dot exciton emission resonant to the micro-pillar cavity mode(Q~1800),we achieve a fiber-output single-photon count rate as high as 4.73×10^(6) counts per second,with the second-order auto-correlation g2(0)remaining at 0.08.展开更多
This study presents a low-noise,high-rate front-end readout application-specific integrated circuit(ASIC)designed for the electromagnetic calorimeter(ECAL)of the Super Tau-Charm Facility(STCF).To address the high back...This study presents a low-noise,high-rate front-end readout application-specific integrated circuit(ASIC)designed for the electromagnetic calorimeter(ECAL)of the Super Tau-Charm Facility(STCF).To address the high background-count rate in the STCF ECAL,the temporal features of signals are analyzed node-by-node along the chain of the analog front-end circuit.Then,the system is optimized to mitigate the pile-up effects and elevate the count rate to megahertz levels.First,a charge-sensitive amplifier(CSA)with a fast reset path is developed,enabling quick resetting when the output reaches the maximum amplitude.This prevents the CSA from entering a pulse-dead zone owing to amplifier saturation caused by the pile-up.Second,a high-order shaper with baseline holder circuits is improved to enhance the anti-pile-up capability while maintaining an effective noise-filtering performance.Third,a high-speed peak-detection and hold circuit with an asynchronous first-input-first-output buffer function is proposed to hold and read the piled-up signals of the shaper.The ASIC is designed and manufactured using a standard commercial 1P6M 0.18μm mixed-signal CMOS process with a chip area of 2.4 mm×1.6 mm.The measurement results demonstrate a dynamic range of 4–500 fC with a nonlinearity error below 1.5%.For periodically distributed input signals,a count rate of 1.5 MHz/Ch is achieved with a peak time of 360 ns,resulting in an equivalent noise charge(ENC)of 2500 e^(-)-.The maximum count rate is 4 MHz/Ch at a peak time of 120 ns.At a peak time of 1.68μs with a 270 pF external capacitance,the minimum ENC is 1966 e^(-)-,and the noise slope is 3.08 e^(-)-∕pF.The timing resolution is better than 125 ps at an input charge of 200 fC.The power consumption is 35 mW/Ch.展开更多
Hamamatsu R1924A is one of the most widely used photomultiplier tubes(PMTs) in nuclear physics.Since the active base suitable for R1924A is still not available in market, an active base is designed for Hamamatsu R1924...Hamamatsu R1924A is one of the most widely used photomultiplier tubes(PMTs) in nuclear physics.Since the active base suitable for R1924A is still not available in market, an active base is designed for Hamamatsu R1924A PMT, and the test results at high counting rates are presented. The active bases with two different sets of resistor chains were tested and compared by a frequency-controlled green straw hat LED light. A stable signal output up to 100 kHz is achieved using frequency-controlled LED pulsed light. The temperature of bases, which reflects the power consumption and is crucial for applications in vacuum, is also monitored with the same LED pulsed light. The temperature of the active base with smaller resistances reaches about twice of that of the active base with larger resistances in the resistor chain. For the applications in vacuum, the active base with resistance between the two sets of resistor chains may be preferable.展开更多
本文建立了高效液相色谱水凝粒子激光计数法测定化妆品原料蓝铜胜肽(GHK-Cu)含量的方法。样品以0.1%三氟乙酸水溶液溶解,以0.1%三氟乙酸水溶液-0.1%三氟乙酸乙腈溶液为流动相,经CAPCELL PAK ADME色谱柱梯度洗脱分离,水凝粒子激光计数检...本文建立了高效液相色谱水凝粒子激光计数法测定化妆品原料蓝铜胜肽(GHK-Cu)含量的方法。样品以0.1%三氟乙酸水溶液溶解,以0.1%三氟乙酸水溶液-0.1%三氟乙酸乙腈溶液为流动相,经CAPCELL PAK ADME色谱柱梯度洗脱分离,水凝粒子激光计数检测器测定,挥发温度35℃,流速1.0 mL/min。GHK-Cu在此酸性条件下完全解离为GHK和Cu^(2+),分离度较好,GHK在3.125~100.0μg/mL范围内线性关系良好,相关系数(r)为0.9996;Cu^(2+)在0.582~18.6μg/mL范围内线性关系良好,相关系数(r)为0.9995;加标回收率为101.3%~103.5%,相对标准偏差(n=3)小于1.0%。该方法具有操作简单、定量准确、重复性好、能够有效分离原料中杂质等优点,适用于化妆品原料蓝铜胜肽含量的测定。展开更多
For a characteristic c-ray with interlaced overlap peak, and the case where its reliable and credible net count cannot be obtained using the current high-purity germanium(HPGe) multichannel γ-ray spectrum software, t...For a characteristic c-ray with interlaced overlap peak, and the case where its reliable and credible net count cannot be obtained using the current high-purity germanium(HPGe) multichannel γ-ray spectrum software, two new methods are proposed herein to obtain the γ-ray net peak count from the interlaced overlap peak in the HPGe cray spectrometer system, of which one is the symmetric conversion method based on Gaussian distribution and the other is where the energy average value of two close γ-rays is regarded as the γ-ray energy. The experimental results indicate that the two methods mentioned above are reliable and credible. This study is significant for the development of better γ-ray spectrum processing software for measuring complex γ-ray spectra concerning the nuclear reaction cross section, neutron activation analysis, and analysis of transuranium elements, using an HPGe detector.展开更多
The ultraviolet (UV) photoresponses of Wurtzite GaN, ZnO, and 6H-SiC-based Optical Field Effect Transistor (OPFET) detectors are estimated with an in-depth analysis of the same considering the generalized model and th...The ultraviolet (UV) photoresponses of Wurtzite GaN, ZnO, and 6H-SiC-based Optical Field Effect Transistor (OPFET) detectors are estimated with an in-depth analysis of the same considering the generalized model and the front-illuminated model for high resolution imaging and UV communication applications. The gate materials considered for the proposed study are gold (Au) and Indium-Tin-Oxide (ITO) for GaN, Au for SiC, and Au and silver dioxide (AgO2) for ZnO. The results indicate significant improvement in the Linear Dynamic Range (LDR) over the previously investigated GaN OPFET (buried-gate, front-illuminated and generalized) models with Au gate. The generalized model has superior dynamic range than the front-illuminated model. In terms of responsivity, all the models including buried-gate OPFET exhibit high and comparable photoresponses. Buried-gate devices on the whole, exhibit faster response than the surface gate models except in the AgO2-ZnO generalized OPFET model wherein the switching time is the lowest. The generalized model enables faster switching than the front-illuminated model. The switching times in all the cases are of the order of nanoseconds to picoseconds. The SiC generalized OPFET model shows the highest 3-dB bandwidths of 11.88 GHz, 36.2 GHz, and 364 GHz, and modest unity-gain cut-off frequencies of 4.62 GHz, 8.71 GHz, and 5.71 GHz at the optical power densities of 0.575 μW/cm2, 0.575 mW/cm2, and 0.575 W/cm2 respectively. These are in overall, the highest detection-cum-amplifi-cation bandwidths among all the investigated devices. The same device exhibits the highest LDR of 73.3 dB. The device performance is superior to most of the other existing detectors along with comparable LDR, thus, emerging as a high performance photodetector for imaging and communication applications. All the detectors show considerably high detectivities owing to the high responsivity values. The results have been analyzed by the photovoltaic and the photoconductive effects, and the series resistance effects and will aid in conducting further research. The results are in line with the experiments and the commercially available software simulations. The devices will greatly contribute towards single photon counting, high resolution imaging, and UV communication applications.展开更多
基金supported by the Key-Area Research and Development Program of Guangdong Province(Grant No.2018B030329001)the National Key Technologies R&D Program of China(2018YFA0306101)+2 种基金The Scientific Instrument Developing Project of the Chinese Academy of Science(YJKYYQ20170032)the National Natural Science Foundation of China(61505196)the Program of Beijing Academy of Quantum Information Sciences(Grant No.Y18G01).
文摘In this work,we achieve high count-rate single-photon output in single-mode(SM)optical fiber.Epitaxial and dilute InAs/GaAs quantum dots(QDs)are embedded in a GaAs/AlGaAs distributed Bragg reflector(DBR)with a micro-pillar cavity,so as to improve their light emission extraction in the vertical direction,thereby enhancing the optical SM fiber’s collection capabil-ity(numerical aperture:0.13).By tuning the temperature precisely to make the quantum dot exciton emission resonant to the micro-pillar cavity mode(Q~1800),we achieve a fiber-output single-photon count rate as high as 4.73×10^(6) counts per second,with the second-order auto-correlation g2(0)remaining at 0.08.
基金supported by the National Natural Science Foundation of China(Nos.12375191,12275218,12341502,12105224,12205307)National Key Research and Development Program of China(No.2023YFE0206300,2023YFF0719600)+2 种基金Guangdong Basic and Applied Basic Research Foundation(No.2024A1515012141)China Postdoctoral Science Foundation(No.2023M742850)Innovation Foundation for Doctor Dissertation of Northwestern Polytechnical University(No.CX2021025)。
文摘This study presents a low-noise,high-rate front-end readout application-specific integrated circuit(ASIC)designed for the electromagnetic calorimeter(ECAL)of the Super Tau-Charm Facility(STCF).To address the high background-count rate in the STCF ECAL,the temporal features of signals are analyzed node-by-node along the chain of the analog front-end circuit.Then,the system is optimized to mitigate the pile-up effects and elevate the count rate to megahertz levels.First,a charge-sensitive amplifier(CSA)with a fast reset path is developed,enabling quick resetting when the output reaches the maximum amplitude.This prevents the CSA from entering a pulse-dead zone owing to amplifier saturation caused by the pile-up.Second,a high-order shaper with baseline holder circuits is improved to enhance the anti-pile-up capability while maintaining an effective noise-filtering performance.Third,a high-speed peak-detection and hold circuit with an asynchronous first-input-first-output buffer function is proposed to hold and read the piled-up signals of the shaper.The ASIC is designed and manufactured using a standard commercial 1P6M 0.18μm mixed-signal CMOS process with a chip area of 2.4 mm×1.6 mm.The measurement results demonstrate a dynamic range of 4–500 fC with a nonlinearity error below 1.5%.For periodically distributed input signals,a count rate of 1.5 MHz/Ch is achieved with a peak time of 360 ns,resulting in an equivalent noise charge(ENC)of 2500 e^(-)-.The maximum count rate is 4 MHz/Ch at a peak time of 120 ns.At a peak time of 1.68μs with a 270 pF external capacitance,the minimum ENC is 1966 e^(-)-,and the noise slope is 3.08 e^(-)-∕pF.The timing resolution is better than 125 ps at an input charge of 200 fC.The power consumption is 35 mW/Ch.
基金supported by the National Natural Science Foundation of China(Nos.91426301 and 11075189)the Strategic Priority Research Program of the Chinese Academy of Sciences"ADS project"(No.XDA03030200)+2 种基金the Program for the CAS"Light of West China"(No.29Y601030)the US Department of Energy(No.DE-FG02-93ER40773)the program of the"visiting professorship of senior international scientists of the Chinese Academy of Sciences"for their support during his stay at the IMP
文摘Hamamatsu R1924A is one of the most widely used photomultiplier tubes(PMTs) in nuclear physics.Since the active base suitable for R1924A is still not available in market, an active base is designed for Hamamatsu R1924A PMT, and the test results at high counting rates are presented. The active bases with two different sets of resistor chains were tested and compared by a frequency-controlled green straw hat LED light. A stable signal output up to 100 kHz is achieved using frequency-controlled LED pulsed light. The temperature of bases, which reflects the power consumption and is crucial for applications in vacuum, is also monitored with the same LED pulsed light. The temperature of the active base with smaller resistances reaches about twice of that of the active base with larger resistances in the resistor chain. For the applications in vacuum, the active base with resistance between the two sets of resistor chains may be preferable.
文摘本文建立了高效液相色谱水凝粒子激光计数法测定化妆品原料蓝铜胜肽(GHK-Cu)含量的方法。样品以0.1%三氟乙酸水溶液溶解,以0.1%三氟乙酸水溶液-0.1%三氟乙酸乙腈溶液为流动相,经CAPCELL PAK ADME色谱柱梯度洗脱分离,水凝粒子激光计数检测器测定,挥发温度35℃,流速1.0 mL/min。GHK-Cu在此酸性条件下完全解离为GHK和Cu^(2+),分离度较好,GHK在3.125~100.0μg/mL范围内线性关系良好,相关系数(r)为0.9996;Cu^(2+)在0.582~18.6μg/mL范围内线性关系良好,相关系数(r)为0.9995;加标回收率为101.3%~103.5%,相对标准偏差(n=3)小于1.0%。该方法具有操作简单、定量准确、重复性好、能够有效分离原料中杂质等优点,适用于化妆品原料蓝铜胜肽含量的测定。
基金supported by the National Natural Science Foundation of China(Nos.11575090,11605099)the Young Key Teachers Training Program of He’nan Higher Education in China(No.2015GGJS-258)
文摘For a characteristic c-ray with interlaced overlap peak, and the case where its reliable and credible net count cannot be obtained using the current high-purity germanium(HPGe) multichannel γ-ray spectrum software, two new methods are proposed herein to obtain the γ-ray net peak count from the interlaced overlap peak in the HPGe cray spectrometer system, of which one is the symmetric conversion method based on Gaussian distribution and the other is where the energy average value of two close γ-rays is regarded as the γ-ray energy. The experimental results indicate that the two methods mentioned above are reliable and credible. This study is significant for the development of better γ-ray spectrum processing software for measuring complex γ-ray spectra concerning the nuclear reaction cross section, neutron activation analysis, and analysis of transuranium elements, using an HPGe detector.
文摘The ultraviolet (UV) photoresponses of Wurtzite GaN, ZnO, and 6H-SiC-based Optical Field Effect Transistor (OPFET) detectors are estimated with an in-depth analysis of the same considering the generalized model and the front-illuminated model for high resolution imaging and UV communication applications. The gate materials considered for the proposed study are gold (Au) and Indium-Tin-Oxide (ITO) for GaN, Au for SiC, and Au and silver dioxide (AgO2) for ZnO. The results indicate significant improvement in the Linear Dynamic Range (LDR) over the previously investigated GaN OPFET (buried-gate, front-illuminated and generalized) models with Au gate. The generalized model has superior dynamic range than the front-illuminated model. In terms of responsivity, all the models including buried-gate OPFET exhibit high and comparable photoresponses. Buried-gate devices on the whole, exhibit faster response than the surface gate models except in the AgO2-ZnO generalized OPFET model wherein the switching time is the lowest. The generalized model enables faster switching than the front-illuminated model. The switching times in all the cases are of the order of nanoseconds to picoseconds. The SiC generalized OPFET model shows the highest 3-dB bandwidths of 11.88 GHz, 36.2 GHz, and 364 GHz, and modest unity-gain cut-off frequencies of 4.62 GHz, 8.71 GHz, and 5.71 GHz at the optical power densities of 0.575 μW/cm2, 0.575 mW/cm2, and 0.575 W/cm2 respectively. These are in overall, the highest detection-cum-amplifi-cation bandwidths among all the investigated devices. The same device exhibits the highest LDR of 73.3 dB. The device performance is superior to most of the other existing detectors along with comparable LDR, thus, emerging as a high performance photodetector for imaging and communication applications. All the detectors show considerably high detectivities owing to the high responsivity values. The results have been analyzed by the photovoltaic and the photoconductive effects, and the series resistance effects and will aid in conducting further research. The results are in line with the experiments and the commercially available software simulations. The devices will greatly contribute towards single photon counting, high resolution imaging, and UV communication applications.
