Silicon germanium （SiGe） heterojunction bipolar transistor （HBT） on thin silicon-on-insulator （SOI） has recently been demonstrated and integrated into the latest SOI BiCMOS technology. The Early effect of the SO...Silicon germanium （SiGe） heterojunction bipolar transistor （HBT） on thin silicon-on-insulator （SOI） has recently been demonstrated and integrated into the latest SOI BiCMOS technology. The Early effect of the SOI SiGe HBT is analysed considering vertical and horizontal collector depletion, which is different from that of a bulk counterpart. A new compact formula of the Early voltage is presented and validated by an ISE TCAD simulation. The Early voltage shows a kink with the increase of the reverse base-collector bias. Large differences are observed between SOI devices and their bulk counterparts. The presented Early effect model can be employed for a fast evaluation of the Early voltage and is useful to the design, the simulation and the fabrication of high performance SOI SiCe devices and circuits.展开更多
We present a study on the single event transient （SET） induced by a pulsed laser in different silicon-germanium （SiGe） heterojunction bipolar transistors （HBTs） with the structure of local oxidation of silicon ...We present a study on the single event transient （SET） induced by a pulsed laser in different silicon-germanium （SiGe） heterojunction bipolar transistors （HBTs） with the structure of local oxidation of silicon （LOCOS） and deep trench isolation （DTI）. The experimental results are discussed in detail and it is demonstrated that a SiGe HBT with the structure of LOCOS is more sensitive than the DTI SiGe HBT in the SET. Because of the limitation of the DTI structure, the charge collection of diffusion in the DTI SiGe HBT is less than that of the LOCOS SiGe HBT. The SET sensitive area of the LOCOS SiGe HBT is located in the eollector-substrate （C/S） junction, while the sensitive area of the DTI SiGe HBT is located near to the collector electrodes.展开更多
Based on the thermal network of the two-dimensional heterojunction bipolar transistors(HBTs) array, the thermal resistance matrix is presented, including the self-heating thermal resistance and thermal coupling resist...Based on the thermal network of the two-dimensional heterojunction bipolar transistors(HBTs) array, the thermal resistance matrix is presented, including the self-heating thermal resistance and thermal coupling resistance to describe the self-heating and thermal coupling effects, respectively.For HBT cells along the emitter length direction, the thermal coupling resistance is far smaller than the self-heating thermal resistance, and the peak junction temperature is mainly determined by the self-heating thermal resistance.However, the thermal coupling resistance is in the same order with the self-heating thermal resistance for HBT cells along the emitter width direction.Furthermore, the dependence of the thermal resistance matrix on cell spacing along the emitter length direction and cell spacing along the emitter width direction is also investigated, respectively.It is shown that the moderate increase of cell spacings along the emitter length direction and the emitter width direction could effectively lower the self-heating thermal resistance and thermal coupling resistance,and hence the peak junction temperature is decreased, which sheds light on adopting a two-dimensional non-uniform cell spacing layout to improve the uneven temperature distribution.By taking a 2 × 6 HBTs array for example, a twodimensional non-uniform cell spacing layout is designed, which can effectively lower the peak junction temperature and reduce the non-uniformity of the dissipated power.For the HBTs array with optimized layout, the high power-handling capability and thermal dissipation capability are kept when the bias voltage increases.展开更多
A study on the single event transient （SET） induced by a pulsed laser in a silicon-germanium （SiGe） heterojunction bipolar transistor （HBT） is presented in this work. The impacts of laser energy and collector lo...A study on the single event transient （SET） induced by a pulsed laser in a silicon-germanium （SiGe） heterojunction bipolar transistor （HBT） is presented in this work. The impacts of laser energy and collector load resistance on the SET are investigated in detail. The waveform, amplitude, and width of the SET pulse as well as collected charge are used to characterize the SET response. The experimental results are discussed in detail and it is demonstrated that the laser energy and load resistance significantly affect the SET in the SiGe HBT. Furthermore, the underlying physical mechanisms are analyzed and investigated, and a near-ideal exponential model is proposed for the first time to describe the discharge of laser-induced electrons via collector resistance to collector supply when both base-collector and collector-substrate junctions are reverse biased or weakly forward biased. Besides, it is found that an additional multi-path discharge would play an important role in the SET once the base-collector and collector-substrate junctions get strongly forward biased due to a strong transient step charge by the laser pulse.展开更多
A neuro-space mapping(Neuro-SM) for modeling heterojunction bipolar transistor(HBT) is presented, which can automatically modify the input signals of the given model by neural network. The novel Neuro-SM formulations ...A neuro-space mapping(Neuro-SM) for modeling heterojunction bipolar transistor(HBT) is presented, which can automatically modify the input signals of the given model by neural network. The novel Neuro-SM formulations for DC and small-signal simulation are proposed to obtain the mapping network. Simulation results show that the errors between Neuro-SM models and the accurate data are less than 1%, demonstrating that the accurcy of the proposed method is higher than those of the existing models.展开更多
Silicon-germanium （SiGe） hereto-junction bipolar transistor current transients induced by pulse laser and heavy iron are measured using a real-time digital oscilloscope. These transients induced by pulse laser and h...Silicon-germanium （SiGe） hereto-junction bipolar transistor current transients induced by pulse laser and heavy iron are measured using a real-time digital oscilloscope. These transients induced by pulse laser and heavy iron exhibit the same waveform and charge collection time except for the amplitude of peak current. Different laser energies and voltage biases under heavy ion irradiation also have impact on current transient, whereas the waveform remains unchanged. The position-correlated current transients suggest that the nature of the current transient is controlled by the behavior of the C/S junction.展开更多
This paper presents an investigation into the impact of proton-induced alteration of carrier lifetime on the singleevent transient(SET) caused by heavy ions in silicon–germanium heterojunction bipolar transistor(SiGe...This paper presents an investigation into the impact of proton-induced alteration of carrier lifetime on the singleevent transient(SET) caused by heavy ions in silicon–germanium heterojunction bipolar transistor(SiGe HBT).The ioninduced current transients and integrated charge collections under different proton fluences are obtained based on technology computer-aided design(TCAD) simulation.The results indicate that the impact of carrier lifetime alteration is determined by the dominating charge collection mechanism at the ion incident position and only the long-time diffusion process is affected.With a proton fluence of 5 × 1013 cm-2, almost no change is found in the transient feature, and the charge collection of events happened in the region enclosed by deep trench isolation(DTI), where prompt funneling collection is the dominating mechanism.Meanwhile, for the events happening outside DTI where diffusion dominates the collection process, the peak value and the duration of the ion-induced current transient both decrease with increasing proton fluence, leading to a great decrease in charge collection.展开更多
The performance of low frequency noise(LFN)in SiGe heterojunction bipolar transistors(HBTs)is presented.The experimental results indicate that the performance of LFN in SiGe HBTs agrees with classical LFN theory.Based...The performance of low frequency noise(LFN)in SiGe heterojunction bipolar transistors(HBTs)is presented.The experimental results indicate that the performance of LFN in SiGe HBTs agrees with classical LFN theory.Based on classical LFN theory,the source of LFN in SiGe HBTs is confirmed from Hooge modal and McWhorter model simultaneously.Furthermore,according to this results,the base current coefficient α is extracted and the relationship between current noise power spectral density and base current is also shown.展开更多
Heterojunction Bipolar Transistors with SiGe base and Si emitter and collector have increasingly become important in high speed applications in electronics due to better performance of these devices with a modest incr...Heterojunction Bipolar Transistors with SiGe base and Si emitter and collector have increasingly become important in high speed applications in electronics due to better performance of these devices with a modest increase in complexity of fabrication process. Speed of these devices is mainly determined by transit time of minority carriers across the device. Base transit time is the most important component of the total transit time. An analytical model is developed here to predict the variation of base transit time with Ge content, base doping concentration, temperature, and other device parameters. Studies have been made for both uniform and exponential doping distributions with different Ge profiles in the base region. Band gap narrowing effect due to high doping concentration is also taken into account in the model.展开更多
In this paper, we present an improved high-frequency equivalent circuit for SiGe heterojunction bipolar transistors（HBTs） with a CBE layout, where we consider the distributed effects along the base region. The actua...In this paper, we present an improved high-frequency equivalent circuit for SiGe heterojunction bipolar transistors（HBTs） with a CBE layout, where we consider the distributed effects along the base region. The actual device structure is divided into three parts： a link base region under a spacer oxide, an intrinsic transistor region under the emitter window,and an extrinsic base region. Each region is considered as a two-port network, and is composed of a distributed resistance and capacitance. We solve the admittance parameters by solving the transmission-line equation. Then, we obtain the smallsignal equivalent circuit depending on the reasonable approximations. Unlike previous compact models, in our proposed model, we introduce an additional internal base node, and the intrinsic base resistance is shifted into this internal base node,which can theoretically explain the anomalous change in the intrinsic bias-dependent collector resistance in the conventional compact model.展开更多
该文设计和制作了一款单片集成硅锗异质结双极晶体管(SiGe HBT)低噪声放大器(LNA)。由于放大器采用复合型电阻负反馈结构,所以可灵活调整不同反馈电阻,同时获得合适的偏置、良好的端口匹配和低的噪声系数。基于0.35μm Si CMOS平面工艺...该文设计和制作了一款单片集成硅锗异质结双极晶体管(SiGe HBT)低噪声放大器(LNA)。由于放大器采用复合型电阻负反馈结构,所以可灵活调整不同反馈电阻,同时获得合适的偏置、良好的端口匹配和低的噪声系数。基于0.35μm Si CMOS平面工艺制定了放大器单芯片集成的工艺流程。为了进一步降低放大器的噪声系数,在制作放大器中SiGe器件时,采用钛硅合金(TiSi2)来减小晶体管基极电阻。由于没有使用占片面积大的螺旋电感,最终研制出的SiGe HBT LNA芯片面积仅为0.282mm2。测试结果表明,在工作频带0.2-1.2GHz内,LNA噪声系数低至2.5dB,增益高达26.7dB,输入输出端口反射系数分别小于-7.4dB和-10dB。展开更多
基于2μm的In Ga P/Ga As异质结双极晶体管(HBT)工艺设计了一种可应用于IEEE802.11 b/g/n无线局域网(WLAN)的高线性度射频功率放大器。为了提高射频功率放大器的线性度,采用了负反馈镜像电路提供直流工作点,设计了良好的输入、输出和级...基于2μm的In Ga P/Ga As异质结双极晶体管(HBT)工艺设计了一种可应用于IEEE802.11 b/g/n无线局域网(WLAN)的高线性度射频功率放大器。为了提高射频功率放大器的线性度,采用了负反馈镜像电路提供直流工作点,设计了良好的输入、输出和级间匹配电路来提高射频功率放大器的线性输出功率。流片结果表明,在工作电压为3.3 V时,射频功率放大器的1 d B线性压缩输出功率(P1d B)可达27 d Bm,当误差向量幅度(EVM)为3%时,2.4 GHz64 QAM激励下,输出功率可达19.8 d Bm,满足标准规范要求。展开更多
基金Project supported by the National Ministries and Commissions (Grant Nos. 51308040203 and 6139801)the Fundamental Research Funds for the Central Universities of China (Grant Nos. 72105499 and 72104089)the Natural Science Basic Research Plan in Shaanxi Province of China (Grant No. 2010JQ8008)
文摘Silicon germanium （SiGe） heterojunction bipolar transistor （HBT） on thin silicon-on-insulator （SOI） has recently been demonstrated and integrated into the latest SOI BiCMOS technology. The Early effect of the SOI SiGe HBT is analysed considering vertical and horizontal collector depletion, which is different from that of a bulk counterpart. A new compact formula of the Early voltage is presented and validated by an ISE TCAD simulation. The Early voltage shows a kink with the increase of the reverse base-collector bias. Large differences are observed between SOI devices and their bulk counterparts. The presented Early effect model can be employed for a fast evaluation of the Early voltage and is useful to the design, the simulation and the fabrication of high performance SOI SiCe devices and circuits.
基金Supported by the National Natural Science Foundation of China under Grant Nos 61274106
文摘We present a study on the single event transient （SET） induced by a pulsed laser in different silicon-germanium （SiGe） heterojunction bipolar transistors （HBTs） with the structure of local oxidation of silicon （LOCOS） and deep trench isolation （DTI）. The experimental results are discussed in detail and it is demonstrated that a SiGe HBT with the structure of LOCOS is more sensitive than the DTI SiGe HBT in the SET. Because of the limitation of the DTI structure, the charge collection of diffusion in the DTI SiGe HBT is less than that of the LOCOS SiGe HBT. The SET sensitive area of the LOCOS SiGe HBT is located in the eollector-substrate （C/S） junction, while the sensitive area of the DTI SiGe HBT is located near to the collector electrodes.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61006059 and 61774012)Beijing Municipal Natural Science Foundation,China(Grant No.4143059)+3 种基金Beijing Municipal Education Committee,China(Grant No.KM201710005027)Postdoctoral Science Foundation of Beijing,China(Grant No.2015ZZ-11)China Postdoctoral Science Foundation(Grant No.2015M580951)Scientific Research Foundation Project of Beijing Future Chip Technology Innovation Center,China(Grant No.KYJJ2016008)
文摘Based on the thermal network of the two-dimensional heterojunction bipolar transistors(HBTs) array, the thermal resistance matrix is presented, including the self-heating thermal resistance and thermal coupling resistance to describe the self-heating and thermal coupling effects, respectively.For HBT cells along the emitter length direction, the thermal coupling resistance is far smaller than the self-heating thermal resistance, and the peak junction temperature is mainly determined by the self-heating thermal resistance.However, the thermal coupling resistance is in the same order with the self-heating thermal resistance for HBT cells along the emitter width direction.Furthermore, the dependence of the thermal resistance matrix on cell spacing along the emitter length direction and cell spacing along the emitter width direction is also investigated, respectively.It is shown that the moderate increase of cell spacings along the emitter length direction and the emitter width direction could effectively lower the self-heating thermal resistance and thermal coupling resistance,and hence the peak junction temperature is decreased, which sheds light on adopting a two-dimensional non-uniform cell spacing layout to improve the uneven temperature distribution.By taking a 2 × 6 HBTs array for example, a twodimensional non-uniform cell spacing layout is designed, which can effectively lower the peak junction temperature and reduce the non-uniformity of the dissipated power.For the HBTs array with optimized layout, the high power-handling capability and thermal dissipation capability are kept when the bias voltage increases.
基金Project supported by the National Natural Science Foundation of China (Grant No. 60976013)
文摘A study on the single event transient （SET） induced by a pulsed laser in a silicon-germanium （SiGe） heterojunction bipolar transistor （HBT） is presented in this work. The impacts of laser energy and collector load resistance on the SET are investigated in detail. The waveform, amplitude, and width of the SET pulse as well as collected charge are used to characterize the SET response. The experimental results are discussed in detail and it is demonstrated that the laser energy and load resistance significantly affect the SET in the SiGe HBT. Furthermore, the underlying physical mechanisms are analyzed and investigated, and a near-ideal exponential model is proposed for the first time to describe the discharge of laser-induced electrons via collector resistance to collector supply when both base-collector and collector-substrate junctions are reverse biased or weakly forward biased. Besides, it is found that an additional multi-path discharge would play an important role in the SET once the base-collector and collector-substrate junctions get strongly forward biased due to a strong transient step charge by the laser pulse.
基金Supported by the National Natural Science Foundation of China(No.61271067)
文摘A neuro-space mapping(Neuro-SM) for modeling heterojunction bipolar transistor(HBT) is presented, which can automatically modify the input signals of the given model by neural network. The novel Neuro-SM formulations for DC and small-signal simulation are proposed to obtain the mapping network. Simulation results show that the errors between Neuro-SM models and the accurate data are less than 1%, demonstrating that the accurcy of the proposed method is higher than those of the existing models.
基金Supported by the National Natural Science Foundation of China under Grant Nos 61274106 and 61574171
文摘Silicon-germanium （SiGe） hereto-junction bipolar transistor current transients induced by pulse laser and heavy iron are measured using a real-time digital oscilloscope. These transients induced by pulse laser and heavy iron exhibit the same waveform and charge collection time except for the amplitude of peak current. Different laser energies and voltage biases under heavy ion irradiation also have impact on current transient, whereas the waveform remains unchanged. The position-correlated current transients suggest that the nature of the current transient is controlled by the behavior of the C/S junction.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.11775167,61574171,11575138,and 11835006)
文摘This paper presents an investigation into the impact of proton-induced alteration of carrier lifetime on the singleevent transient(SET) caused by heavy ions in silicon–germanium heterojunction bipolar transistor(SiGe HBT).The ioninduced current transients and integrated charge collections under different proton fluences are obtained based on technology computer-aided design(TCAD) simulation.The results indicate that the impact of carrier lifetime alteration is determined by the dominating charge collection mechanism at the ion incident position and only the long-time diffusion process is affected.With a proton fluence of 5 × 1013 cm-2, almost no change is found in the transient feature, and the charge collection of events happened in the region enclosed by deep trench isolation(DTI), where prompt funneling collection is the dominating mechanism.Meanwhile, for the events happening outside DTI where diffusion dominates the collection process, the peak value and the duration of the ion-induced current transient both decrease with increasing proton fluence, leading to a great decrease in charge collection.
文摘The performance of low frequency noise(LFN)in SiGe heterojunction bipolar transistors(HBTs)is presented.The experimental results indicate that the performance of LFN in SiGe HBTs agrees with classical LFN theory.Based on classical LFN theory,the source of LFN in SiGe HBTs is confirmed from Hooge modal and McWhorter model simultaneously.Furthermore,according to this results,the base current coefficient α is extracted and the relationship between current noise power spectral density and base current is also shown.
文摘Heterojunction Bipolar Transistors with SiGe base and Si emitter and collector have increasingly become important in high speed applications in electronics due to better performance of these devices with a modest increase in complexity of fabrication process. Speed of these devices is mainly determined by transit time of minority carriers across the device. Base transit time is the most important component of the total transit time. An analytical model is developed here to predict the variation of base transit time with Ge content, base doping concentration, temperature, and other device parameters. Studies have been made for both uniform and exponential doping distributions with different Ge profiles in the base region. Band gap narrowing effect due to high doping concentration is also taken into account in the model.
基金Project supported by the National Natural Science Funds of China(Grant Nos.61574056 and 61504156)the Natural Science Foundation of Shanghai,China(Grant No.14ZR1412000)+1 种基金Shanghai Sailing Program,China(Grant No.17YF1404700)the Science and Technology Commission of Shanghai Municipality,China(Grant No.14DZ2260800)
文摘In this paper, we present an improved high-frequency equivalent circuit for SiGe heterojunction bipolar transistors（HBTs） with a CBE layout, where we consider the distributed effects along the base region. The actual device structure is divided into three parts： a link base region under a spacer oxide, an intrinsic transistor region under the emitter window,and an extrinsic base region. Each region is considered as a two-port network, and is composed of a distributed resistance and capacitance. We solve the admittance parameters by solving the transmission-line equation. Then, we obtain the smallsignal equivalent circuit depending on the reasonable approximations. Unlike previous compact models, in our proposed model, we introduce an additional internal base node, and the intrinsic base resistance is shifted into this internal base node,which can theoretically explain the anomalous change in the intrinsic bias-dependent collector resistance in the conventional compact model.
文摘基于2μm的In Ga P/Ga As异质结双极晶体管(HBT)工艺设计了一种可应用于IEEE802.11 b/g/n无线局域网(WLAN)的高线性度射频功率放大器。为了提高射频功率放大器的线性度,采用了负反馈镜像电路提供直流工作点,设计了良好的输入、输出和级间匹配电路来提高射频功率放大器的线性输出功率。流片结果表明,在工作电压为3.3 V时,射频功率放大器的1 d B线性压缩输出功率(P1d B)可达27 d Bm,当误差向量幅度(EVM)为3%时,2.4 GHz64 QAM激励下,输出功率可达19.8 d Bm,满足标准规范要求。
