为解决传统功率放大器在管壳外部进行谐波匹配,导致谐波短路传输相位不一致和谐波、基波匹配电路互相影响的问题,基于0.25μm GaN HEMT工艺,对C波段高效率预匹配功率放大器进行研究。功率放大器管壳内部HEMT输入端采用键合线和瓷片电容...为解决传统功率放大器在管壳外部进行谐波匹配,导致谐波短路传输相位不一致和谐波、基波匹配电路互相影响的问题,基于0.25μm GaN HEMT工艺,对C波段高效率预匹配功率放大器进行研究。功率放大器管壳内部HEMT输入端采用键合线和瓷片电容形成T型匹配网络来提升输入阻抗,以HEMT输出端键合线和瓷片电容分别作为电感和电容进行串联,使HEMT输出端对二次谐波短路,控制器件的电压和电流波形,提高放大器的漏极效率。管壳外部利用微带线进行阻抗变换,将输入输出阻抗匹配到50Ω。经测试,GaN HEMT功率放大器在5.8 GHz下饱和输出功率、漏极效率和功率增益分别为48.7 dBm、72%和11.3 dB。展开更多
针对传统模型因缺少对电磁相互作用的表征而导致高频精度不足的问题,以具有优异高频特性的磷化铟高电子迁移率场效应晶体管(indium phosphide high electron mobility field-effect transistor,InP HEMT)为例,提出一种引入寄生耦合效应...针对传统模型因缺少对电磁相互作用的表征而导致高频精度不足的问题,以具有优异高频特性的磷化铟高电子迁移率场效应晶体管(indium phosphide high electron mobility field-effect transistor,InP HEMT)为例,提出一种引入寄生耦合效应的小信号等效电路模型与高频等效噪声电路模型.首先引入栅极–漏极之间的互感元件来模拟器件在高频下由于电磁相互作用产生的寄生耦合效应,并采用电磁仿真与直接参数提取相结合的建模方法,建立小信号等效电路模型.然后以所建小信号模型为基础,通过相关噪声矩阵与噪声参数的提取方法,建立高频等效噪声电路模型.实验结果表明,在500 MHz~50 GHz频段内,S参数最大误差小于3%,四噪声参数相较于传统模型提升约2.45%,并从小信号电流增益(|h21|)、单边功率增益(U)与最小噪声系数(Fmin)出发,评估了寄生耦合效应对高频性能的影响.展开更多
为了提高半导体器件小信号建模精度并解决优化算法易陷入局部最优解的问题,提出了一种基于改进斑马优化算法(Improved Zebra Optimization Algorithm,IZOA)的氮化镓高电子迁移率晶体管(Gallium Nitride High Electron Mobility Transist...为了提高半导体器件小信号建模精度并解决优化算法易陷入局部最优解的问题,提出了一种基于改进斑马优化算法(Improved Zebra Optimization Algorithm,IZOA)的氮化镓高电子迁移率晶体管(Gallium Nitride High Electron Mobility Transistor,GaN HEMT)混合小信号建模方法。采用数学修正法和直接提取法提取小信号参数,建立初步模型,再使用改进的斑马优化算法进一步提高建模的精度。对斑马优化算法(Zebra Optimization Algorithm,ZOA)的改进主要集中在三个方面:采用混沌映射提高初始种群多样性;使用反向学习策略扩大搜索范围;使用动态概率值替代固定值平衡搜索与收敛能力。实验结果表明,IZOA将直接提取法的平均误差从3.47%降至0.19%,相比灰狼优化(Grey Wolf Optimizer,GWO)算法(平均误差0.95%)降低0.76%,较标准ZOA(平均误差0.52%)降低0.33%,验证了算法的有效性和准确性。展开更多
随着5G通信、毫米波雷达和卫星通信系统对高频大功率器件线性度要求的不断提升,传统AlGaN/GaN高电子迁移率晶体管(High Electron Mobility Transfer,HEMT)在功率放大器应用中面临的非线性失真问题日益凸显。本文针对高线性度氮化镓功率...随着5G通信、毫米波雷达和卫星通信系统对高频大功率器件线性度要求的不断提升,传统AlGaN/GaN高电子迁移率晶体管(High Electron Mobility Transfer,HEMT)在功率放大器应用中面临的非线性失真问题日益凸显。本文针对高线性度氮化镓功率放大器件的设计需求,基于Silvaco TCAD软件,系统研究了栅源/栅漏间距(Lgs/Lgd)、异质结势垒层Al组分分布以及栅下凹槽结构对GaN HEMT器件转移特性及线性度关键指标--栅压摆幅(Gate Voltage Swing,GVS)的影响规律。通过对比分析发现,减小栅源栅漏间距以及增大栅源栅漏Al组分能够有效提高器件的GVS。减小栅下Al组分可以改善器件GVS大小并使器件的阈值电压正漂,随后结合栅下凹槽使得器件的GVS提高了55.56%。本研究为高线性度GaN功率器件的结构优化提供了系统的设计方法和理论依据。展开更多
GaN基高电子迁移率晶体管(High Electron Mobility Transistor,HEMT)因其在高频、高功率和高温应用中的优异性能而受到广泛关注。金属-绝缘体-半导体高电子迁移率晶体管(Metal-Insulating-Semiconductor High Electron Mobility Transis...GaN基高电子迁移率晶体管(High Electron Mobility Transistor,HEMT)因其在高频、高功率和高温应用中的优异性能而受到广泛关注。金属-绝缘体-半导体高电子迁移率晶体管(Metal-Insulating-Semiconductor High Electron Mobility Transistor,MIS-HEMT)通过引入栅极绝缘层来改善器件的性能,特别是减少栅极泄漏电流和提高击穿电压。然而使用凹栅结构的MIS-HEMT在实现阈值电压(Vth)均匀性上存在挑战。使用Silvaco TCAD软件对具有三重势垒层的凹栅结构增强型AlGaN/GaN MIS-HEMT进行了数值研究,与传统肖特基栅极HEMT相比,三势垒层增强型AlGaN/GaN MIS-HEMT采用压电中和技术(Piezoelectric Neutralization Technology,PNT),实现了高阈值电压均匀性。为了使器件获得更好的直流特性,研究了改变缓冲层和PNT层Al质量分数对器件的影响。此外,还详细分析了器件尺寸缩放(例如栅漏距离Lgd和栅长Lg)对直流特性的依赖性。优化后的MIS-HEMT的Vth为0.8 V,输出电流为0.43 A/mm,饱和漏电流为1.99 A/mm,最大跨导(gmmax)为0.14 S/mm,比导通电阻(Ron,sp)为1.64 mΩ·cm^(2)。研究结果对于三势垒层AlGaN/GaN MIS-HEMT结构的设计或优化具有重要的指导意义。展开更多
Gallium nitride(GaN)-based devices have significant potential for space applications.However,the mechanisms of radiation damage to the device,particularly from strong ionizing radiation,remains unknown.This study inve...Gallium nitride(GaN)-based devices have significant potential for space applications.However,the mechanisms of radiation damage to the device,particularly from strong ionizing radiation,remains unknown.This study investigates the effects of radiation on p-gate AlGaN/GaN high-electron-mobility transistors(HEMTs).Under a high voltage,the HEMT leakage current increased sharply and was accompanied by a rapid increase in power density that caused"thermal burnout"of the devices.In addition,a burnout signature appeared on the surface of the burned devices,proving that a single-event burnout effect occurred.Additionally,degradation,including an increase in the on-resistance and a decrease in the breakdown voltage,was observed in devices irradiated with high-energy heavy ions and without bias.The latent tracks induced by heavy ions penetrated the heterojunction interface and extended into the GaN layer.Moreover,a new type of N_(2)bubble defect was discovered inside the tracks using Fresnel analysis.The accumulation of N_(2)bubbles in the heterojunction and buffer layers is more likely to cause leakage and failure.This study indicates that electrical stress accelerates the failure rate and that improving heat dissipation is an effective reinforcement method for GaN-based devices.展开更多
文摘针对传统模型因缺少对电磁相互作用的表征而导致高频精度不足的问题,以具有优异高频特性的磷化铟高电子迁移率场效应晶体管(indium phosphide high electron mobility field-effect transistor,InP HEMT)为例,提出一种引入寄生耦合效应的小信号等效电路模型与高频等效噪声电路模型.首先引入栅极–漏极之间的互感元件来模拟器件在高频下由于电磁相互作用产生的寄生耦合效应,并采用电磁仿真与直接参数提取相结合的建模方法,建立小信号等效电路模型.然后以所建小信号模型为基础,通过相关噪声矩阵与噪声参数的提取方法,建立高频等效噪声电路模型.实验结果表明,在500 MHz~50 GHz频段内,S参数最大误差小于3%,四噪声参数相较于传统模型提升约2.45%,并从小信号电流增益(|h21|)、单边功率增益(U)与最小噪声系数(Fmin)出发,评估了寄生耦合效应对高频性能的影响.
文摘为了提高半导体器件小信号建模精度并解决优化算法易陷入局部最优解的问题,提出了一种基于改进斑马优化算法(Improved Zebra Optimization Algorithm,IZOA)的氮化镓高电子迁移率晶体管(Gallium Nitride High Electron Mobility Transistor,GaN HEMT)混合小信号建模方法。采用数学修正法和直接提取法提取小信号参数,建立初步模型,再使用改进的斑马优化算法进一步提高建模的精度。对斑马优化算法(Zebra Optimization Algorithm,ZOA)的改进主要集中在三个方面:采用混沌映射提高初始种群多样性;使用反向学习策略扩大搜索范围;使用动态概率值替代固定值平衡搜索与收敛能力。实验结果表明,IZOA将直接提取法的平均误差从3.47%降至0.19%,相比灰狼优化(Grey Wolf Optimizer,GWO)算法(平均误差0.95%)降低0.76%,较标准ZOA(平均误差0.52%)降低0.33%,验证了算法的有效性和准确性。
文摘随着5G通信、毫米波雷达和卫星通信系统对高频大功率器件线性度要求的不断提升,传统AlGaN/GaN高电子迁移率晶体管(High Electron Mobility Transfer,HEMT)在功率放大器应用中面临的非线性失真问题日益凸显。本文针对高线性度氮化镓功率放大器件的设计需求,基于Silvaco TCAD软件,系统研究了栅源/栅漏间距(Lgs/Lgd)、异质结势垒层Al组分分布以及栅下凹槽结构对GaN HEMT器件转移特性及线性度关键指标--栅压摆幅(Gate Voltage Swing,GVS)的影响规律。通过对比分析发现,减小栅源栅漏间距以及增大栅源栅漏Al组分能够有效提高器件的GVS。减小栅下Al组分可以改善器件GVS大小并使器件的阈值电压正漂,随后结合栅下凹槽使得器件的GVS提高了55.56%。本研究为高线性度GaN功率器件的结构优化提供了系统的设计方法和理论依据。
基金supported by the National Natural Science Foundation of China(Nos.12035019,62234013,12205350,12075290,12175287)the China National Postdoctoral Program for Innovative Talents(BX20200340)+1 种基金the fund of Innovation Center of Radiation Application(No.KFZC2022020601)the Chinese Academy of Sciences(CAS)“Light of West China"Program hosted by Jian Zeng.
文摘Gallium nitride(GaN)-based devices have significant potential for space applications.However,the mechanisms of radiation damage to the device,particularly from strong ionizing radiation,remains unknown.This study investigates the effects of radiation on p-gate AlGaN/GaN high-electron-mobility transistors(HEMTs).Under a high voltage,the HEMT leakage current increased sharply and was accompanied by a rapid increase in power density that caused"thermal burnout"of the devices.In addition,a burnout signature appeared on the surface of the burned devices,proving that a single-event burnout effect occurred.Additionally,degradation,including an increase in the on-resistance and a decrease in the breakdown voltage,was observed in devices irradiated with high-energy heavy ions and without bias.The latent tracks induced by heavy ions penetrated the heterojunction interface and extended into the GaN layer.Moreover,a new type of N_(2)bubble defect was discovered inside the tracks using Fresnel analysis.The accumulation of N_(2)bubbles in the heterojunction and buffer layers is more likely to cause leakage and failure.This study indicates that electrical stress accelerates the failure rate and that improving heat dissipation is an effective reinforcement method for GaN-based devices.
