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Magnetism and Transport Properties of HfFe_6Ge_6-type Er_(1-x)Gd_xMn_6Ge_6(x=0.2-0.9) Compounds
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作者 汪汝武 刘静 《Journal of Wuhan University of Technology(Materials Science)》 SCIE EI CAS 2010年第3期415-418,共4页
Magnetic transitions and magnetotransport properties of polycrystalline Er1-xGdxMn6Ge6(x=0.2-0.9) compounds were studied.The magnetic and resistivity properties were analyzed in an applied magnetic field up to 5 T.I... Magnetic transitions and magnetotransport properties of polycrystalline Er1-xGdxMn6Ge6(x=0.2-0.9) compounds were studied.The magnetic and resistivity properties were analyzed in an applied magnetic field up to 5 T.It is found that Er1-xGdxMn6Ge6(x=0.2-0.9) compounds displays a transition from the antiferromagnetic state to the ferrimagnetic state for increasing Gd content.The Er1-xGdx Mn6Ge6 with x=0.2 and 0.5 compounds order antiferromagnetically at 430 and 432 K,respectively.The Er1-x GdxMn6Ge6 with x=0.8 and 0.9 compounds order ferrimagnetically at 462 and 471 K,respectively.The Er1-xGdxMn6Ge6 compounds undergo the second transitions below 71 K.The magnetoresistance curves of the Er0.1Gd0.9Mn6Ge6 compound in a field of 5 T are presented and the magnetoresistance effects are related to the metamagnetic transitions. 展开更多
关键词 hffe6Ge6 MAGNETISM magnetoresistance effect
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Si-SiO_2界面陷阱引起的双极晶体管h_(FE)漂移的模型与模拟 被引量:3
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作者 庄奕琪 孙青 杨银堂 《固体电子学研究与进展》 CAS CSCD 北大核心 1989年第2期202-207,共6页
本文表明,Si-SiO_2界面过渡层中的载流子陷阱对硅体内电子存在慢俘获作用,这将导致npn型双极晶体管电流放大系数h_(FE)随时间的正向漂移。从这种物理机制出发,建立了相应的数学模型。经计算机模拟分析,求得了h_(FE)随时间的漂移曲线以... 本文表明,Si-SiO_2界面过渡层中的载流子陷阱对硅体内电子存在慢俘获作用,这将导致npn型双极晶体管电流放大系数h_(FE)随时间的正向漂移。从这种物理机制出发,建立了相应的数学模型。经计算机模拟分析,求得了h_(FE)随时间的漂移曲线以及温度、发射结偏压、基区表面势对这种漂移的影响。结果表明,基区表面势对漂移量的大小有重要影响,高温老化是漂移失效筛选的有效手段。 展开更多
关键词 Si-SiO2界面 双极晶体管 hffe 漂移
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