The interdependence of electrical parameters has long inhibited the progress of bismuth telluride(Bi_(2)Te3),limiting its widespread application in thermoelectric cooling and power generation.This work investigates th...The interdependence of electrical parameters has long inhibited the progress of bismuth telluride(Bi_(2)Te3),limiting its widespread application in thermoelectric cooling and power generation.This work investigates the n-type Bi_(2)Te_(2.79)Se_(0.21)I_(0.004)(Bi_(2)(Te,Se)_(3),BTS)system with light Zn doping,revealing that Zn addition simultaneously enhances the Seebeck coefficient(S)and electrical conductivity(σ)through the modulation of defect composition and multi-level band regulation.The substitution of Zn atoms at Bi sites enhances S via bandgap(E_(g))widening,band flattening,and band splitting effects,contributing to a competitive power factor(PF)of∼60μW⋅cm^(−1)⋅K^(−2).Additionally,thermal conductivity is maintained at a low level,leading to an extraordinary figure-of-merit(ZT)value of∼1.3 at room temperature.Furthermore,the Bi_(2)Zn_(0.01)Te_(2.79)Se_(0.21)I_(0.004) system demonstrates impressive thermoelectric device performance,with a maximum cooling temperature difference(ΔT_(max))of∼70.0 K at 300 K,rising to∼78.0 K at 323 K and∼85.7 K at 343 K,as well as a maximum conversion efficiency(η_(max))of∼6.2%under aΔT of 200 K.This study clarifies the mechanism of Zn doping and presents a cost-effective strategy for enhancing the performance of n-type BTS thermoelectrics and their devices.展开更多
基金supported by the National Key Research and Development Program of China (Grant No.2024YFA1210400)the National Science Fund for Distinguished Young Scholars (Grant No.52525101)+3 种基金the National Natural Science Foundation of China (Grant Nos.52450001 and 22409014)the International Cooperation and Exchange of the National Natural Science Foundation of China (Grant No.52411540237)the Tencent Xplorer Prizethe support of the National High-Level Talent Special Support Programs—Young Talents。
文摘The interdependence of electrical parameters has long inhibited the progress of bismuth telluride(Bi_(2)Te3),limiting its widespread application in thermoelectric cooling and power generation.This work investigates the n-type Bi_(2)Te_(2.79)Se_(0.21)I_(0.004)(Bi_(2)(Te,Se)_(3),BTS)system with light Zn doping,revealing that Zn addition simultaneously enhances the Seebeck coefficient(S)and electrical conductivity(σ)through the modulation of defect composition and multi-level band regulation.The substitution of Zn atoms at Bi sites enhances S via bandgap(E_(g))widening,band flattening,and band splitting effects,contributing to a competitive power factor(PF)of∼60μW⋅cm^(−1)⋅K^(−2).Additionally,thermal conductivity is maintained at a low level,leading to an extraordinary figure-of-merit(ZT)value of∼1.3 at room temperature.Furthermore,the Bi_(2)Zn_(0.01)Te_(2.79)Se_(0.21)I_(0.004) system demonstrates impressive thermoelectric device performance,with a maximum cooling temperature difference(ΔT_(max))of∼70.0 K at 300 K,rising to∼78.0 K at 323 K and∼85.7 K at 343 K,as well as a maximum conversion efficiency(η_(max))of∼6.2%under aΔT of 200 K.This study clarifies the mechanism of Zn doping and presents a cost-effective strategy for enhancing the performance of n-type BTS thermoelectrics and their devices.
