A physically based analytical model was developed to predict the performance of the plateau observed in the gate C-V characteristics of strained-Si/SiGe pMOSFET.Experimental results were used to validate this model.Th...A physically based analytical model was developed to predict the performance of the plateau observed in the gate C-V characteristics of strained-Si/SiGe pMOSFET.Experimental results were used to validate this model.The extracted parameters from our model were tOX=20 nm,ND=1×1016cm 3,tSSi=13.2 nm,consistent with the experimental values.The results show that the simulation results agree with experimental data well.It is found that the plateau can be strongly affected by doping concentration,strained-Si layer thickness and mass fraction of Ge in the SiGe layer.The model has been implemented in the software for strained silicon MOSFET parameter extraction,and has great value in the design of the strained-Si/SiGe devices.展开更多
Nano-floating gate memory devices with ZnO nano-crystals as charge storage layers are fabricated,and the influence of post-deposition annealing temperature and thickness of the ZnO layer are investigated.Atomic force ...Nano-floating gate memory devices with ZnO nano-crystals as charge storage layers are fabricated,and the influence of post-deposition annealing temperature and thickness of the ZnO layer are investigated.Atomic force microscopy and scanning electron microscopy reveal the morphology of discrete ZnO nano-crystals.For capacitance-voltage measurements,it is found that the memory device with 1.5 nm ZnO and annealed at 700℃shows a larger memory window of 4.3 V（at±6 V）and better retention characteristics than memoriy devices with2.5 nm ZnO or annealed at other temperatures.These results indicate that the nano-floating gate memory with ZnO nano-crystals can obtain good trade-off memory properties.展开更多
基金Projects(51308040203,6139801)supported by National Ministries and Commissions,ChinaProjects(72105499,72104089)supported by the Fundamental Research Funds for the Central Universities,ChinaProject(2010JQ8008)supported by the Natural Science Basic Research Plan in Shaanxi Province of China
文摘A physically based analytical model was developed to predict the performance of the plateau observed in the gate C-V characteristics of strained-Si/SiGe pMOSFET.Experimental results were used to validate this model.The extracted parameters from our model were tOX=20 nm,ND=1×1016cm 3,tSSi=13.2 nm,consistent with the experimental values.The results show that the simulation results agree with experimental data well.It is found that the plateau can be strongly affected by doping concentration,strained-Si layer thickness and mass fraction of Ge in the SiGe layer.The model has been implemented in the software for strained silicon MOSFET parameter extraction,and has great value in the design of the strained-Si/SiGe devices.
基金Supported by the National Natural Science Foundation of China under Grant No 61404055
文摘Nano-floating gate memory devices with ZnO nano-crystals as charge storage layers are fabricated,and the influence of post-deposition annealing temperature and thickness of the ZnO layer are investigated.Atomic force microscopy and scanning electron microscopy reveal the morphology of discrete ZnO nano-crystals.For capacitance-voltage measurements,it is found that the memory device with 1.5 nm ZnO and annealed at 700℃shows a larger memory window of 4.3 V（at±6 V）and better retention characteristics than memoriy devices with2.5 nm ZnO or annealed at other temperatures.These results indicate that the nano-floating gate memory with ZnO nano-crystals can obtain good trade-off memory properties.
