The decreasing feature sizes in complementary metal-oxide semiconductor （CMOS） transistor technology will require the replacement of SiO2 with gate dielectrics that have a high dielectric constant （high-k） because...The decreasing feature sizes in complementary metal-oxide semiconductor （CMOS） transistor technology will require the replacement of SiO2 with gate dielectrics that have a high dielectric constant （high-k） because as the SiO2 gate thickness is reduced below 1.4 nm, electron tunnelling effects and high leakage currents occur in SiO2, which present serious obstacles to future device reliability. In recent years significant progress has been made on the screening and selection of high-k gate dielectrics, understanding their physical properties, and their integration into CMOS technology. Now the family of hafnium oxide-based materials has emerged as the leading candidate for high-k gate dielectrics due to their excellent physical properties. It is also realized that the high-k oxides must be implemented in conjunction with metal gate electrodes to get sufficient potential for CMOS continue scaling. In the advanced nanoscale Si-based CMOS devices, the composition and thickness of interfacial layers in the gate stacks determine the critical performance of devices. Therefore, detailed atomic- scale understandings of the microstructures and interfacial structures built in the advanced CMOS gate stacks, are highly required. In this paper, several high-resolution electron, ion, and photon-based techniques currently used to characterize the high-k gate dielectrics and interfaces at atomic-scale, are reviewed. Particularly, we critically review the research progress on the characterization of interface behavior and structural evolution in the high-k gate dielectrics by high-resolution transmission electron microscopy （HRTEM） and the related techniques based on scanning transmission electron microscopy （STEM）, including high-angle annular dark- field （HAADF） imaging （also known as Z-contrast imaging）, electron energy-loss spectroscopy （EELS）, and energy dispersive X-ray spectroscopy （EDS）, due to that HRTEM and STEM have become essential metrology tools for characterizing the dielectric gate stacks in the present and future generations of CMOS devices. In Section 1 of this review, the working principles of each technique are briefly introduced and their key features are outlined. In Section 2, microstructural characterizations of high-k gate dielectrics at atomic-scale by electron microscopy are critically reviewed by citing some recent results reported on high-k gate dielectrics. In Section 3, metal gate electrodes and the interfacial structures between high-k dielectrics and metal gates are discussed. The electron beam damage effects in high-k gate stacks are also evaluated, and their origins and prevention are described in Section 4. Finally, we end this review with personal perspectives towards the future challenges of atomic-scale material characterization in advanced CMOS gate stacks.展开更多
An analytical direct tunneling gate current model for cylindrical surrounding gate（CSG） MOSFETs with high-k gate stacks is developed. It is found that the direct tunneling gate current is a strong function of the g...An analytical direct tunneling gate current model for cylindrical surrounding gate（CSG） MOSFETs with high-k gate stacks is developed. It is found that the direct tunneling gate current is a strong function of the gate＇s oxide thickness, but that it is less affected by the change in channel radius. It is also revealed that when the thickness of the equivalent oxide is constant, the thinner the first layer, the smaller the direct tunneling gate current.Moreover, it can be seen that the dielectric with a higher dielectric constant shows a lower tunneling current than expected. The accuracy of the analytical model is verified by the good agreement of its results with those obtained by the three-dimensional numerical device simulator ISE.展开更多
The time zero dielectric breakdown characteristics of MOSCAP with ultra-thin EOT high-k metal gate stacks are studied. The TZDB results show an abnormal area dependence due to the series resistance effect. The series ...The time zero dielectric breakdown characteristics of MOSCAP with ultra-thin EOT high-k metal gate stacks are studied. The TZDB results show an abnormal area dependence due to the series resistance effect. The series resistance components extracted from the Fowler-Nordheim tunneling relation are attributed to the spreading resistance due to the asymmetry electrodes. Based on a series model to eliminate the series resistance effect, an area acceleration dependence is obtained by correcting the TZDB results. The area dependence follows Poisson area scaling rules, which indicates that the mechanism of TZDB is the same as TDDB and could be considered as a trap generation process.展开更多
Based on the elastic trap-assisted tunneling mechanism in high-κgate stacks,a quantum percolation tunneling current 1/fγ noise model is proposed by incorporating quantum tunneling theory into the quantum percolation...Based on the elastic trap-assisted tunneling mechanism in high-κgate stacks,a quantum percolation tunneling current 1/fγ noise model is proposed by incorporating quantum tunneling theory into the quantum percolation model.We conclude that the noise amplitude of the PSD(Power Spectral Density)for three stages,namely the fresh device,one-layer BD(breakdown),and two-layer BD,increases from 10-22→10-14→10-8 A2/Hz.Meanwhile,the noise exponent γ for the three stages,has the 1/f2type(γ→2),1/fγ type(γ→1~2),and 1/f type(γ→1),respectively.The simulation results are in good agreement with the experimental results.This model reasonably interprets the correlation between the bi-layer breakdown and the tunneling 1/fγ noise amplitude dependence and 1/fγ noise exponent dependence.These results provide a theoretical basis for the high-κ gate stacks bi-layer breakdown noise characterization methods.展开更多
A semi-empirical analytic model for the threshold voltage instability of a MOSFET is derived from Shockley-Read-Hall （SRH） statistics to account for the transient charging effects in a MOSFET high-k gate stack. Star...A semi-empirical analytic model for the threshold voltage instability of a MOSFET is derived from Shockley-Read-Hall （SRH） statistics to account for the transient charging effects in a MOSFET high-k gate stack. Starting from the single energy level and single trap assumption, an analytical expression for the filled trap density in terms of dynamic time is derived from SRH statistics. The semi-empirical analytic model for the threshold voltage instability is developed based on MOSFET device physics between the threshold voltage and the induced trap density. The obtained model is also verified by extensive experimental data of trapping and de-trapping stress from different high-k gate configurations.展开更多
By complementing the equivalent oxide thickness （EOT） of a 1.7nm nitride/oxynitride （N/O） stack gate dielectric （EOT- 1.7nm） with a W/TiN metal gate electrode,metal gate CMOS devices with sub-100nm gate length a...By complementing the equivalent oxide thickness （EOT） of a 1.7nm nitride/oxynitride （N/O） stack gate dielectric （EOT- 1.7nm） with a W/TiN metal gate electrode,metal gate CMOS devices with sub-100nm gate length are fabricated in China for the first time. The key technologies adopted to restrain SCE and to improve drive ability include a 1.7nm N/O stack gate dielectric, non-CMP planarization technology, a T-type refractory W/TiN metal stack gate electrode, and a novel super steep retrograde channel doping using heavy ion implantation and a double sidewall scheme. Using these optimized key technologies, high performance 95nm metal gate CMOS devices with excellent SCE and good driving ability are fabricated. Under power supply voltages of VDS ± 1.5V and VGS± 1.8V,drive currents of 679μA/μm for nMOS and - 327μA/μm for pMOS are obtained. A subthreshold slope of 84.46mV/dec, DIBL of 34.76mV/V, and Vth of 0.26V for nMOS, and a subthreshold slope of 107.4mV/dec,DIBL of 54.46mV/V, and Vth of 0.27V for pMOS are achieved. These results show that the combined technology has indeed thoroughly eliminated the boron penetration phenomenon and polysilicon depletion effect ,effectively reduced gate tunneling leakage, and improved device reliability.展开更多
Based on the exact resultant solution of two-dimensional Poisson＇s equation, the novel two-dimensional models, which include surface potential, threshold voltage, subthreshold current and subthreshold swing, have bee...Based on the exact resultant solution of two-dimensional Poisson＇s equation, the novel two-dimensional models, which include surface potential, threshold voltage, subthreshold current and subthreshold swing, have been developed for gate stack symmetrical double-gate strained-Si MOSFETs. The models are verified by numerical simulation. Besides offering the physical insight into device physics, the model provides the basic designing guidance of further immunity of short channel effect of complementary metal-oxide-semiconductor （CMOS）-based device in a nanoscale regime.展开更多
High-k gate dielectric Hf Ti ON Ga As metal-oxide–semiconductor（MOS） capacitors with La ON as interfacial passivation layer（IPL） and NH3- or N2-plasma surface pretreatment are fabricated, and their interfacial an...High-k gate dielectric Hf Ti ON Ga As metal-oxide–semiconductor（MOS） capacitors with La ON as interfacial passivation layer（IPL） and NH3- or N2-plasma surface pretreatment are fabricated, and their interfacial and electrical properties are investigated and compared with their counterparts that have neither La ON IPL nor surface treatment. It is found that good interface quality and excellent electrical properties can be achieved for a NH3-plasma pretreated Ga As MOS device with a stacked gate dielectric of Hf Ti ON/La ON. These improvements should be ascribed to the fact that the NH3-plasma can provide H atoms and NH radicals that can effectively remove defective Ga/As oxides. In addition, La ON IPL can further block oxygen atoms from being in-diffused, and Ga and As atoms from being out-diffused from the substrate to the high-k dielectric. This greatly suppresses the formation of Ga/As native oxides and gives rise to an excellent high-k/Ga As interface.展开更多
In the present work, a two-dimensional（2D） analytical framework of triple material symmetrical gate stack（TMGS）DG-MOSFET is presented in order to subdue the short channel effects. A lightly doped channel along wit...In the present work, a two-dimensional（2D） analytical framework of triple material symmetrical gate stack（TMGS）DG-MOSFET is presented in order to subdue the short channel effects. A lightly doped channel along with triple material gate having different work functions and symmetrical gate stack structure, showcases substantial betterment in quashing short channel effects to a good extent. The device functioning amends in terms of improved exemption to threshold voltage roll-off, thereby suppressing the short channel effects. The encroachments of respective device arguments on the threshold voltage of the proposed structure are examined in detail. The significant outcomes are compared with the numerical simulation data obtained by using 2D ATLAS;device simulator to affirm and formalize the proposed device structure.展开更多
Higher-s dielectric LaLuO3, deposited by molecular beam deposition, with TiN as gate stack is integrated into high-mobility Si/SiGe/SOI quantum-well p-type metal-oxide-semiconduetor field effect transistors. Threshold...Higher-s dielectric LaLuO3, deposited by molecular beam deposition, with TiN as gate stack is integrated into high-mobility Si/SiGe/SOI quantum-well p-type metal-oxide-semiconduetor field effect transistors. Threshold voltage shift and capacitance equivalent thickness shrink are observed, resulting from oxygen scavenging effect in LaLuO3 with ti-rich TiN after high temperature annealing. The mechanism of oxygen scavenging and its potential for resistive memory applications are analyzed and discussed.展开更多
The fringing-induced barrier lowering（FIBL） effect of sub-100 nm MOSFETs with high-k gate dielectrics is investigated using a two-dimensional device simulator.An equivalent capacitance theory is proposed to explain ...The fringing-induced barrier lowering（FIBL） effect of sub-100 nm MOSFETs with high-k gate dielectrics is investigated using a two-dimensional device simulator.An equivalent capacitance theory is proposed to explain the physics mechanism of the FIBL effect.The FIBL effect is enhanced and the short channel performance is degraded with increasing capacitance.Based on equivalent capacitance theory,the influences of channel length,junction depth,gate/lightly doped drain（LDD） overlap length,spacer material and spacer width on FIBL is thoroughly investigated.A stack gate dielectric is presented to suppress the FIBL effect.展开更多
The Ge metal-oxide-semiconductor (MOS) capacitors were fabricated with HfO2 as gate dielectric.AlON,NdON,and NdAlON were deposited between the gate dielectric and the Ge substrate as the interfacial passivation layer ...The Ge metal-oxide-semiconductor (MOS) capacitors were fabricated with HfO2 as gate dielectric.AlON,NdON,and NdAlON were deposited between the gate dielectric and the Ge substrate as the interfacial passivation layer (IPL).The electrical properties (such as capacitance-voltage (C-V) and gate leakage current density versus gate voltage (J_(g)-V_(g))) were measured by HP4284A precision LCR meter and HP4156A semiconductor parameter analyzer.The chemical states and interfacial quality of the high-k/Ge interface were investigated by X-ray photoelectron spectroscopy (XPS).The experimental results show that the sample with the NdAlON as IPL exhibits the excellent interfacial and electrical properties.These should be attributed to an effective suppression of the Ge suboxide and HfGeOx interlayer,and an enhanced blocking role against inter-diffusion of the elements during annealing by the NdAlON IPL.展开更多
A junctionless transistor is emerging as a most promising device for the future technology in the decananometer regime. To explore and exploit the behavior completely, the understanding of gate tunneling current is of...A junctionless transistor is emerging as a most promising device for the future technology in the decananometer regime. To explore and exploit the behavior completely, the understanding of gate tunneling current is of great importance. In this paper we have explored the gate tunneling current of a double gate junctionless transistor（DGJLT） for the first time through an analytical model, to meet the future requirement of expected high-k gate dielectric material that could replace SiO2. We therefore present the high-k gate stacked architecture of the DGJLT to minimize the gate tunneling current. This paper also demonstrates the impact of conduction band offset,workfunction difference and k-values on the tunneling current of the DGJLT.展开更多
A threshold-voltage model for a stacked high-k gate dielectric GaAs MOSFET is established by solving a two-dimensional Poisson＇s equation in channel and considering the short-channel, DIBL and quantum effects. The si...A threshold-voltage model for a stacked high-k gate dielectric GaAs MOSFET is established by solving a two-dimensional Poisson＇s equation in channel and considering the short-channel, DIBL and quantum effects. The simulated results are in good agreement with the Silvaco TCAD data, confirming the correctness and validity of the model. Using the model, impacts of structural and physical parameters of the stack high-k gate dielectric on the threshold-voltage shift and the temperature characteristics of the threshold voltage are investigated. The results show that the stacked gate dielectric structure can effectively suppress the fringing-field and DIBL effects and improve the threshold and temperature characteristics, and on the other hand, the influence of temperature on the threshold voltage is overestimated if the quantum effect is ignored.展开更多
We present high-performance enhancement-mode AlGaN/GaN metal-oxide-semiconductor highelectron mobility transistors（MOS-HEMTs） by a fluorinated gate dielectric technique.A nanolaminate of an Al_2O_3/La_xAl_（1-x）O_3...We present high-performance enhancement-mode AlGaN/GaN metal-oxide-semiconductor highelectron mobility transistors（MOS-HEMTs） by a fluorinated gate dielectric technique.A nanolaminate of an Al_2O_3/La_xAl_（1-x）O_3/Al_2O_3 stack（x≈0.33） grown by atomic layer deposition is employed to avoid fluorine ions implantation into the scaled barrier layer.Fabricated enhancement-mode MOS-HEMTs exhibit an excellent performance as compared to those with the conventional dielectric-last technique,delivering a large maximum drain current of 916 mA/mm and simultaneously a high peak transconductance of 342 mS/mm.The balanced DC characteristics indicate that advanced gate stack dielectrics combined with buffered fluorine ions implantation have a great potential for high speed GaN E/D-mode integrated circuit applications.展开更多
The effects of different NH3-plasma treatment procedures on interracial and electrical properties of Ge MOS capacitors with stacked gate dielectric of HtTiON/TaON were investigated. The NH3-plasma treatment was perfor...The effects of different NH3-plasma treatment procedures on interracial and electrical properties of Ge MOS capacitors with stacked gate dielectric of HtTiON/TaON were investigated. The NH3-plasma treatment was performed at different steps during fabrication of the stacked gate dielectric, i.e. before or after interlayer （TaON） deposition, or after deposition ofhigh-k dielectric （HfriON）. It was found that the excellent interface quality with an interface-state density of 4.79 × 101l eV-lcm-2 and low gate leakage current （3.43 ×10-5 A/cm2 at Vg = 1 V） could be achieved for the sample with NH3-plasma treatment directly on the Ge surface before TaON deposition. The involved mechanisms are attributed to the fact that the NH3-plasma can directly react with the Ge surface to form more Ge-N bonds, i.e. more GeOxNy, which effectively blocks the inter-diffusion of elements and suppresses the formation of unstable GeOx interfacial layer, and also passivates oxygen vacancies and dangling bonds near/at the interface due to more N incorporation and decomposed H atoms from the NH3-plasma.展开更多
基金support from Natural Science Foundation of Jiangsu Province (ProjectNo. BK2007130)National Natural Science Foundation of China (Grant Nos. 10874065, 60576023 and 60636010)+3 种基金Ministry of Science and Technology of China (Grant No.2009CB929503)Ministry of Science and Technology of China (Grant Nos. 2009CB929503 and2009ZX02101-4)the project sponsored by the Scientific Research Foundation for the Returned Overseas Chinese Scholars, State Education MinistryNational Found for Fostering Talents of Basic Science (NFFTBS) (ProjectNo. J0630316)
文摘The decreasing feature sizes in complementary metal-oxide semiconductor （CMOS） transistor technology will require the replacement of SiO2 with gate dielectrics that have a high dielectric constant （high-k） because as the SiO2 gate thickness is reduced below 1.4 nm, electron tunnelling effects and high leakage currents occur in SiO2, which present serious obstacles to future device reliability. In recent years significant progress has been made on the screening and selection of high-k gate dielectrics, understanding their physical properties, and their integration into CMOS technology. Now the family of hafnium oxide-based materials has emerged as the leading candidate for high-k gate dielectrics due to their excellent physical properties. It is also realized that the high-k oxides must be implemented in conjunction with metal gate electrodes to get sufficient potential for CMOS continue scaling. In the advanced nanoscale Si-based CMOS devices, the composition and thickness of interfacial layers in the gate stacks determine the critical performance of devices. Therefore, detailed atomic- scale understandings of the microstructures and interfacial structures built in the advanced CMOS gate stacks, are highly required. In this paper, several high-resolution electron, ion, and photon-based techniques currently used to characterize the high-k gate dielectrics and interfaces at atomic-scale, are reviewed. Particularly, we critically review the research progress on the characterization of interface behavior and structural evolution in the high-k gate dielectrics by high-resolution transmission electron microscopy （HRTEM） and the related techniques based on scanning transmission electron microscopy （STEM）, including high-angle annular dark- field （HAADF） imaging （also known as Z-contrast imaging）, electron energy-loss spectroscopy （EELS）, and energy dispersive X-ray spectroscopy （EDS）, due to that HRTEM and STEM have become essential metrology tools for characterizing the dielectric gate stacks in the present and future generations of CMOS devices. In Section 1 of this review, the working principles of each technique are briefly introduced and their key features are outlined. In Section 2, microstructural characterizations of high-k gate dielectrics at atomic-scale by electron microscopy are critically reviewed by citing some recent results reported on high-k gate dielectrics. In Section 3, metal gate electrodes and the interfacial structures between high-k dielectrics and metal gates are discussed. The electron beam damage effects in high-k gate stacks are also evaluated, and their origins and prevention are described in Section 4. Finally, we end this review with personal perspectives towards the future challenges of atomic-scale material characterization in advanced CMOS gate stacks.
基金Project supported by the National Natural Science Foundation of China(Nos.61076101,61204092)the Fundamental Research Fundsfor the Central Universities of China(No.K50511250001)
文摘An analytical direct tunneling gate current model for cylindrical surrounding gate（CSG） MOSFETs with high-k gate stacks is developed. It is found that the direct tunneling gate current is a strong function of the gate＇s oxide thickness, but that it is less affected by the change in channel radius. It is also revealed that when the thickness of the equivalent oxide is constant, the thinner the first layer, the smaller the direct tunneling gate current.Moreover, it can be seen that the dielectric with a higher dielectric constant shows a lower tunneling current than expected. The accuracy of the analytical model is verified by the good agreement of its results with those obtained by the three-dimensional numerical device simulator ISE.
基金Project supported by the National High Technology Research and Development Program(863 Program)of China(No.SS2015AA010601)the National Natural Science Foundation of China(Nos.61176091+1 种基金61306129)the Opening Project of the Key Laboratory of Microelectronics Devices&Integrated Technology,Institute of Microelectronics,Chinese Academy of Sciences
文摘The time zero dielectric breakdown characteristics of MOSCAP with ultra-thin EOT high-k metal gate stacks are studied. The TZDB results show an abnormal area dependence due to the series resistance effect. The series resistance components extracted from the Fowler-Nordheim tunneling relation are attributed to the spreading resistance due to the asymmetry electrodes. Based on a series model to eliminate the series resistance effect, an area acceleration dependence is obtained by correcting the TZDB results. The area dependence follows Poisson area scaling rules, which indicates that the mechanism of TZDB is the same as TDDB and could be considered as a trap generation process.
基金supported by the National Natural Science Foundation of China(Grant Nos.61076101 and 61204092)
文摘Based on the elastic trap-assisted tunneling mechanism in high-κgate stacks,a quantum percolation tunneling current 1/fγ noise model is proposed by incorporating quantum tunneling theory into the quantum percolation model.We conclude that the noise amplitude of the PSD(Power Spectral Density)for three stages,namely the fresh device,one-layer BD(breakdown),and two-layer BD,increases from 10-22→10-14→10-8 A2/Hz.Meanwhile,the noise exponent γ for the three stages,has the 1/f2type(γ→2),1/fγ type(γ→1~2),and 1/f type(γ→1),respectively.The simulation results are in good agreement with the experimental results.This model reasonably interprets the correlation between the bi-layer breakdown and the tunneling 1/fγ noise amplitude dependence and 1/fγ noise exponent dependence.These results provide a theoretical basis for the high-κ gate stacks bi-layer breakdown noise characterization methods.
基金supported by the Special Funds for the State Key Development Program for Basic Research of Chinathe National Natural Science Foundation of China (No.60876027)
文摘A semi-empirical analytic model for the threshold voltage instability of a MOSFET is derived from Shockley-Read-Hall （SRH） statistics to account for the transient charging effects in a MOSFET high-k gate stack. Starting from the single energy level and single trap assumption, an analytical expression for the filled trap density in terms of dynamic time is derived from SRH statistics. The semi-empirical analytic model for the threshold voltage instability is developed based on MOSFET device physics between the threshold voltage and the induced trap density. The obtained model is also verified by extensive experimental data of trapping and de-trapping stress from different high-k gate configurations.
文摘By complementing the equivalent oxide thickness （EOT） of a 1.7nm nitride/oxynitride （N/O） stack gate dielectric （EOT- 1.7nm） with a W/TiN metal gate electrode,metal gate CMOS devices with sub-100nm gate length are fabricated in China for the first time. The key technologies adopted to restrain SCE and to improve drive ability include a 1.7nm N/O stack gate dielectric, non-CMP planarization technology, a T-type refractory W/TiN metal stack gate electrode, and a novel super steep retrograde channel doping using heavy ion implantation and a double sidewall scheme. Using these optimized key technologies, high performance 95nm metal gate CMOS devices with excellent SCE and good driving ability are fabricated. Under power supply voltages of VDS ± 1.5V and VGS± 1.8V,drive currents of 679μA/μm for nMOS and - 327μA/μm for pMOS are obtained. A subthreshold slope of 84.46mV/dec, DIBL of 34.76mV/V, and Vth of 0.26V for nMOS, and a subthreshold slope of 107.4mV/dec,DIBL of 54.46mV/V, and Vth of 0.27V for pMOS are achieved. These results show that the combined technology has indeed thoroughly eliminated the boron penetration phenomenon and polysilicon depletion effect ,effectively reduced gate tunneling leakage, and improved device reliability.
基金Project supported by the National Natural Science Foundation of China (Grant Nos. 60976068 and 60936005)Cultivation Fund of the Key Scientific and Technical Innovation Project, Ministry of Education of China (Grant No. 708083),Cultivation Fund of the Key Scientific and Technical Innovation Project, Ministry of Education of China (Grant No. 200807010010)
文摘Based on the exact resultant solution of two-dimensional Poisson＇s equation, the novel two-dimensional models, which include surface potential, threshold voltage, subthreshold current and subthreshold swing, have been developed for gate stack symmetrical double-gate strained-Si MOSFETs. The models are verified by numerical simulation. Besides offering the physical insight into device physics, the model provides the basic designing guidance of further immunity of short channel effect of complementary metal-oxide-semiconductor （CMOS）-based device in a nanoscale regime.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61176100 and 61274112)
文摘High-k gate dielectric Hf Ti ON Ga As metal-oxide–semiconductor（MOS） capacitors with La ON as interfacial passivation layer（IPL） and NH3- or N2-plasma surface pretreatment are fabricated, and their interfacial and electrical properties are investigated and compared with their counterparts that have neither La ON IPL nor surface treatment. It is found that good interface quality and excellent electrical properties can be achieved for a NH3-plasma pretreated Ga As MOS device with a stacked gate dielectric of Hf Ti ON/La ON. These improvements should be ascribed to the fact that the NH3-plasma can provide H atoms and NH radicals that can effectively remove defective Ga/As oxides. In addition, La ON IPL can further block oxygen atoms from being in-diffused, and Ga and As atoms from being out-diffused from the substrate to the high-k dielectric. This greatly suppresses the formation of Ga/As native oxides and gives rise to an excellent high-k/Ga As interface.
文摘In the present work, a two-dimensional（2D） analytical framework of triple material symmetrical gate stack（TMGS）DG-MOSFET is presented in order to subdue the short channel effects. A lightly doped channel along with triple material gate having different work functions and symmetrical gate stack structure, showcases substantial betterment in quashing short channel effects to a good extent. The device functioning amends in terms of improved exemption to threshold voltage roll-off, thereby suppressing the short channel effects. The encroachments of respective device arguments on the threshold voltage of the proposed structure are examined in detail. The significant outcomes are compared with the numerical simulation data obtained by using 2D ATLAS;device simulator to affirm and formalize the proposed device structure.
基金Supported by the National Natural Science Foundation of China under Grant No 61306126
文摘Higher-s dielectric LaLuO3, deposited by molecular beam deposition, with TiN as gate stack is integrated into high-mobility Si/SiGe/SOI quantum-well p-type metal-oxide-semiconduetor field effect transistors. Threshold voltage shift and capacitance equivalent thickness shrink are observed, resulting from oxygen scavenging effect in LaLuO3 with ti-rich TiN after high temperature annealing. The mechanism of oxygen scavenging and its potential for resistive memory applications are analyzed and discussed.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.60936005 and 61076097)the Cultivation Fund of the Key Scientific and Technical Innovation Project of Ministry of Education of China(Grant No.708083)the Fundamental Research Funds for the Central Universities,China(Grant No.20110203110012)
文摘The fringing-induced barrier lowering（FIBL） effect of sub-100 nm MOSFETs with high-k gate dielectrics is investigated using a two-dimensional device simulator.An equivalent capacitance theory is proposed to explain the physics mechanism of the FIBL effect.The FIBL effect is enhanced and the short channel performance is degraded with increasing capacitance.Based on equivalent capacitance theory,the influences of channel length,junction depth,gate/lightly doped drain（LDD） overlap length,spacer material and spacer width on FIBL is thoroughly investigated.A stack gate dielectric is presented to suppress the FIBL effect.
基金Funded by the National Natural Science Foundation of China (No. 61704113)the Higher Vocational Brand Mayer in Guangdong Province (No.610103)the Educational Science Planning Project of Guangdong Province (Higher Education Special)。
文摘The Ge metal-oxide-semiconductor (MOS) capacitors were fabricated with HfO2 as gate dielectric.AlON,NdON,and NdAlON were deposited between the gate dielectric and the Ge substrate as the interfacial passivation layer (IPL).The electrical properties (such as capacitance-voltage (C-V) and gate leakage current density versus gate voltage (J_(g)-V_(g))) were measured by HP4284A precision LCR meter and HP4156A semiconductor parameter analyzer.The chemical states and interfacial quality of the high-k/Ge interface were investigated by X-ray photoelectron spectroscopy (XPS).The experimental results show that the sample with the NdAlON as IPL exhibits the excellent interfacial and electrical properties.These should be attributed to an effective suppression of the Ge suboxide and HfGeOx interlayer,and an enhanced blocking role against inter-diffusion of the elements during annealing by the NdAlON IPL.
文摘A junctionless transistor is emerging as a most promising device for the future technology in the decananometer regime. To explore and exploit the behavior completely, the understanding of gate tunneling current is of great importance. In this paper we have explored the gate tunneling current of a double gate junctionless transistor（DGJLT） for the first time through an analytical model, to meet the future requirement of expected high-k gate dielectric material that could replace SiO2. We therefore present the high-k gate stacked architecture of the DGJLT to minimize the gate tunneling current. This paper also demonstrates the impact of conduction band offset,workfunction difference and k-values on the tunneling current of the DGJLT.
基金supported by the National Natural Science Foundation of China(No.61176100)
文摘A threshold-voltage model for a stacked high-k gate dielectric GaAs MOSFET is established by solving a two-dimensional Poisson＇s equation in channel and considering the short-channel, DIBL and quantum effects. The simulated results are in good agreement with the Silvaco TCAD data, confirming the correctness and validity of the model. Using the model, impacts of structural and physical parameters of the stack high-k gate dielectric on the threshold-voltage shift and the temperature characteristics of the threshold voltage are investigated. The results show that the stacked gate dielectric structure can effectively suppress the fringing-field and DIBL effects and improve the threshold and temperature characteristics, and on the other hand, the influence of temperature on the threshold voltage is overestimated if the quantum effect is ignored.
基金supported by the National Natural Science Foundation of China(Nos.61504125,61474101,61106130 61076120,61505181)the Natural Science Foundation of Jiangsu Province of China(Nos.BK20131072,BE2012007,BK2012516)
文摘We present high-performance enhancement-mode AlGaN/GaN metal-oxide-semiconductor highelectron mobility transistors（MOS-HEMTs） by a fluorinated gate dielectric technique.A nanolaminate of an Al_2O_3/La_xAl_（1-x）O_3/Al_2O_3 stack（x≈0.33） grown by atomic layer deposition is employed to avoid fluorine ions implantation into the scaled barrier layer.Fabricated enhancement-mode MOS-HEMTs exhibit an excellent performance as compared to those with the conventional dielectric-last technique,delivering a large maximum drain current of 916 mA/mm and simultaneously a high peak transconductance of 342 mS/mm.The balanced DC characteristics indicate that advanced gate stack dielectrics combined with buffered fluorine ions implantation have a great potential for high speed GaN E/D-mode integrated circuit applications.
基金supported by the National Natural Science Foundation of China(Nos.61176100,61274112)
文摘The effects of different NH3-plasma treatment procedures on interracial and electrical properties of Ge MOS capacitors with stacked gate dielectric of HtTiON/TaON were investigated. The NH3-plasma treatment was performed at different steps during fabrication of the stacked gate dielectric, i.e. before or after interlayer （TaON） deposition, or after deposition ofhigh-k dielectric （HfriON）. It was found that the excellent interface quality with an interface-state density of 4.79 × 101l eV-lcm-2 and low gate leakage current （3.43 ×10-5 A/cm2 at Vg = 1 V） could be achieved for the sample with NH3-plasma treatment directly on the Ge surface before TaON deposition. The involved mechanisms are attributed to the fact that the NH3-plasma can directly react with the Ge surface to form more Ge-N bonds, i.e. more GeOxNy, which effectively blocks the inter-diffusion of elements and suppresses the formation of unstable GeOx interfacial layer, and also passivates oxygen vacancies and dangling bonds near/at the interface due to more N incorporation and decomposed H atoms from the NH3-plasma.
